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Val Zwiller

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Published work

30 published item(s)

preprint2026arXiv

Zero-phonon line emission of single photon emitters in helium-ion treated MoS$_2$

We explore the zero-phonon line of single photon emitters in helium-ion treated monolayer MoS$_2$, which are currently understood in terms of single sulfur-site vacancies. By comparing the linewidths of the zero-phonon line as extracted directly from optical spectra with values inferred from the first-order autocorrelation function of the photoluminescence, we quantify bounds of the homogeneous broadening and of phonon-assisted contributions. The results are discussed in terms of both the independent boson model and ab-initio results as computed from GW and Bethe-Salpeter equation approximations.

preprint2022arXiv

2022 Roadmap for Materials for Quantum Technologies

Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.

preprint2022arXiv

Current crowding in nanoscale superconductors within the Ginzburg-Landau model

The current density in a superconductor with turnarounds or constrictions is non-uniform due to a geometrical current crowding effect. This effect reduces the critical current in the superconducting structure compared to a straight segment and is of importance when designing superconducting devices. We investigate the current crowding effect in numerical simulations within the generalized time-dependent Ginzburg-Landau (GTDGL) model. The results are validated experimentally by measuring the magnetic field dependence of the critical current in superconducting nanowire structures, similar to those employed in single-photon detector devices. Comparing the results with London theory, we conclude that the reduction in critical current is significantly smaller in the GTDGL model. This difference is attributed to the current redistribution effect, which reduces the current density in weak points of the superconductor and counteracts the current crowding effect. We numerically investigate the effect of fill factor on the critical current in a meander and conclude that the reduction of critical current is low enough to justify fill factors higher than $33\,\%$ for applications where detection efficiency is critical. Finally, we propose a novel meander design which can combine high fill factor and low current crowding.

preprint2022arXiv

Fractal superconducting nanowires detect infrared single photons with 84% system detection efficiency, 1.02 polarization sensitivity, and 20.8 ps timing resolution

The near-unity system detection efficiency (SDE) and excellent timing resolution of superconducting nanowire single-photon detectors (SNSPDs), combined with their other merits, have enabled many classical and quantum photonic applications. However, the prevalent design based on meandering nanowires makes SDE dependent on the polarization states of the incident photons; for unpolarized light, the major merit of high SDE would get compromised, which could be detrimental for photon-starved applications. Here, we create SNSPDs with an arced fractal geometry that almost completely eliminates this polarization dependence of the SDE, and we experimentally demonstrate 84$\pm$3$\%$ SDE, 1.02$^{+0.06}_{-0.02}$ polarization sensitivity at the wavelength of 1575 nm, and 20.8 ps timing jitter in a 0.1-W closed-cycle Gifford-McMahon cryocooler, at the base temperature of 2.0 K. This demonstration provides a novel, practical device structure of SNSPDs, allowing for operation in the visible, near-, and mid-infrared spectral ranges, and paves the way for polarization-insensitive single-photon detection with high SDE and high timing resolution

preprint2022arXiv

Nanosecond gating of superconducting nanowire single-photon detectors using cryogenic bias circuitry

Superconducting nanowire single-photon detectors (SNSPDs) show near unity efficiency, low dark count rate, and short recovery time. Combining these characteristics with temporal control of SNSPDs broadens their applications as in active de-latching for higher dynamic range counting or temporal filtering for pump-probe spectroscopy or LiDAR. To that end, we demonstrate active gating of an SNSPD with a minimum off-to-on rise time of 2.4 ns and a total gate length of 5.0 ns. We show how the rise time depends on the inductance of the detector in combination with the control electronics. The gate window is demonstrated to be fully and freely, electrically tunable up to 500 ns at a repetition rate of 1.0 MHz, as well as ungated, free-running operation. Control electronics to generate the gating are mounted on the 2.3 K stage of a closed-cycle sorption cryostat, while the detector is operated on the cold stage at 0.8 K. We show that the efficiency and timing jitter of the detector is not altered during the on-time of the gating window. We exploit gated operation to demonstrate a method to increase in the photon counting dynamic range by a factor 11.2, as well as temporal filtering of a strong pump in an emulated pump-probe experiment.

preprint2021arXiv

Giant Rydberg excitons in Cu$_{2}$O probed by photoluminescence excitation spectroscopy

Rydberg excitons are, with their ultrastrong mutual interactions, giant optical nonlinearities, and very high sensitivity to external fields, promising for applications in quantum sensing and nonlinear optics at the single-photon level. To design quantum applications it is necessary to know how Rydberg excitons and other excited states relax to lower-lying exciton states. Here, we present photoluminescence excitation spectroscopy as a method to probe transition probabilities from various excitonic states in cuprous oxide, and we show giant Rydberg excitons at $T=38$ mK with principal quantum numbers up to $n=30$, corresponding to a calculated diameter of 3 $μ$m.

preprint2021arXiv

Roadmap on Integrated Quantum Photonics

Integrated photonics is at the heart of many classical technologies, from optical communications to biosensors, LIDAR, and data center fiber interconnects. There is strong evidence that these integrated technologies will play a key role in quantum systems as they grow from few-qubit prototypes to tens of thousands of qubits. The underlying laser and optical quantum technologies, with the required functionality and performance, can only be realized through the integration of these components onto quantum photonic integrated circuits (QPICs) with accompanying electronics. In the last decade, remarkable advances in quantum photonic integration and a dramatic reduction in optical losses have enabled benchtop experiments to be scaled down to prototype chips with improvements in efficiency, robustness, and key performance metrics. The reduction in size, weight, power, and improvement in stability that will be enabled by QPICs will play a key role in increasing the degree of complexity and scale in quantum demonstrations. In the next decade, with sustained research, development, and investment in the quantum photonic ecosystem (i.e. PIC-based platforms, devices and circuits, fabrication and integration processes, packaging, and testing and benchmarking), we will witness the transition from single- and few-function prototypes to the large-scale integration of multi-functional and reconfigurable QPICs that will define how information is processed, stored, transmitted, and utilized for quantum computing, communications, metrology, and sensing. This roadmap highlights the current progress in the field of integrated quantum photonics, future challenges, and advances in science and technology needed to meet these challenges.

preprint2020arXiv

A platform for high performance photon correlation measurements

A broad range of scientific and industrial disciplines require precise optical measurements at very low light levels. Single-photon detectors combining high efficiency and high time resolution are pivotal in such experiments. By using relatively thick films of NbTiN (8-11\,nm) and improving the pattern fidelity of the nano-structure of the superconducting nanowire single-photon detectors (SNSPD), we fabricated devices demonstrating superior performance over all previously reported detectors in the combination of efficiency and time resolution. Our findings prove that small variations in the nanowire width, in the order of a few nanometers, can lead to a significant penalty on their temporal response. Addressing these issues, we consistently achieved high time resolution (best device 7.7\,ps, other devices $\sim$10-16\,ps) simultaneously with high system detection efficiencies ($80-90\%$) in the wavelength range of 780-1000\,nm, as well as in the telecom bands (1310-1550\,nm). The use of thicker films allowed us to fabricate large-area multi-pixel devices with homogeneous pixel performance. We first fabricated and characterized a $100\times100\, μm^2$ 16-pixel detector and showed there was little variation among individual pixels. Additionally, to showcase the power of our platform, we fabricated and characterized 4-pixel multimode fiber-coupled detectors and carried out photon correlation experiments on a nanowire quantum dot resulting in $g^2(0)$ values lower than 0.04. The multi-pixel detectors alleviate the need for beamsplitters and can be used for higher order correlations with promising prospects not only in the field of quantum optics, but also in bio-imaging applications, such as fluorescence microscopy and positron emission tomography.

preprint2020arXiv

Resonance fluorescence from waveguide-coupled strain-localized two-dimensional quantum emitters

Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe2) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g$^{(2)}(0)=0.150\pm0.093$ and perform on-chip resonant excitation yielding a g$^{(2)}(0)=0.377\pm0.081$. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.

preprint2020arXiv

Scalable single-photon sources in atomically thin MoS2

Real-world quantum applications, eg. on-chip quantum networks and quantum cryptography, necessitate large scale integrated single-photon sources with nanoscale footprint for modern information technology. While on-demand and high fidelity implantation of atomic scale single-photon sources in conventional 3D materials suffer from uncertainties due to the crystals dimensionality, layered 2D materials can host point-like centers with inherent confinement to a sub-nm plane. However, previous attempts to truly deterministically control spatial position and spectral homogeneity while maintaining the 2D character have not been realized. Here, we demonstrate the on-demand creation and precise positioning of single-photon sources in atomically thin MoS2 with very narrow ensemble broadening and near-unity fabrication yield. Focused ion beam irradiation creates 100s to 1000s of mono-typical atomistic defects with anti-bunched emission lines with sub-10 nm lateral and 0.7 nm axial positioning accuracy. Our results firmly establish 2D materials as a scalable platform for single-photon emitters with unprecedented control of position as well as photophysical properties owing to the all-interfacial nature.

preprint2019arXiv

Cu$_2$O Microcrystals Grown on Silicon as Platform for Quantum-Degenerate Excitons and Rydberg States

Cuprous oxide (Cu$_2$O) is a semiconductor with large exciton binding energy and significant technological importance in applications such as photovoltaics and solar water splitting. It is also a superior material system for quantum optics that enabled the observation of two intriguing phenomena, i.e. Rydberg excitons as solid-state analogue to highly-excited atomic states and dense exciton gases showing quantum degeneracy when approaching the phase transition to Bose-Einstein condensation. Previous experiments focused on natural bulk crystals due to major difficulties in growing high-quality synthetic samples. Here, we present Cu$_2$O microcrystals with excellent optical material quality capable of hosting both quantum-degenerate excitons and excited Rydberg states. Growth of Cu$_2$O with exceedingly low point defect levels was achieved on silicon by a scalable thermal oxidation process compatible with lithographic patterning. Using the latter, we demonstrate Rydberg excitons in site-controlled Cu$_2$O microstructures, paving the way for a plethora of applications in integrated quantum photonics.

preprint2019arXiv

Multimode Fiber Coupled Superconducting Nanowire Single Photon Detectors with High Detection Efficiency and Time Resolution

In the past decade superconducting nanowire single photon detectors (SNSPDs) have gradually become an indispensable part of any demanding quantum optics experiment. Until now, most SNSPDs are coupled to single-mode fibers. SNSPDs coupled to multimode fibers have shown promising efficiencies but are yet to achieve high time resolution. For a number of applications ranging from quantum nano-photonics to bio-optics, high efficiency and high time-resolution are desired at the same time. In this paper, we demonstrate the role of polarization on the efficiency of multi-mode fiber coupled detectors, and show how it can be addressed. We fabricated high performance 20, 25 and 50μm diameter detectors targeted for visible, near infrared, and telecom wavelengths. A custom-built setup was used to simulate realistic experiments with randomized modes in the fiber. We simultaneously achieved system efficiency >80% and time resolution <20 ps and made large detectors that offer outstanding performances.

preprint2019arXiv

Passively stable distribution of polarisation entanglement over 192 km of deployed optical fibre

Quantum key distribution (QKD) based on entangled photon pairs holds the potential for repeater-based quantum networks connecting clients over long distance. We demonstrate long-distance entanglement distribution by means of polarisation-entangled photon pairs through two successive deployed 96 km-long telecommunications fibres in the same submarine cable. One photon of each pair was detected directly after the source, while the other travelled the fibre cable in both directions for a total distance of 192 km and attenuation of 48 dB. The observed two-photon Bell state exhibited a fidelity 85% $\pm$ 2% and was stable over several hours. We employed neither active stabilisation of the quantum state nor chromatic dispersion compensation for the fibre.

preprint2016arXiv

Design of broadband high-efficiency superconducting-nanowire single photon detectors

In this paper several designs to maximize the absorption efficiency of superconducting-nanowire single-photon detectors are investigated. Using a simple optical cavity consisting of a gold mirror and a SiO2 layer, the absorption efficiency can be boosted to over 97%: this result is confirmed experimentally by the realization of an NbTiN-based detector having an overall system detection efficiency of 85% at 1.31 micrometers. Calculations show that by sandwiching the nanowire between two dielectric Bragg reflectors, unity absorption (> 99.9%) could be reached at the peak wavelength for optimized structures. To achieve broadband high efficiency, a different approach is considered: a waveguide-coupled detector. The calculations performed in this work show that, by correctly dimensioning the waveguide and the nanowire, polarization-insensitive detectors absorbing more than 95% of the injected photons over a wavelength range of several hundred nm can be designed. We propose a detector design making use of GaN/AlN waveguides, since these materials allow lattice-matched epitaxial deposition of Nb(Ti)N films and are transparent on a very wide wavelength range.

preprint2016arXiv

Initialization of a spin qubit in a site-controlled nanowire quantum dot

A fault-tolerant quantum repeater or quantum computer using solid-state spin-based quantum bits will likely require a physical implementation with many spins arranged in a grid. Self-assembled quantum dots (QDs) have been established as attractive candidates for building spin-based quantum information processing devices, but such QDs are randomly positioned, which makes them unsuitable for constructing large-scale processors. Recent efforts have shown that quantum dots embedded in nanowires can be deterministically positioned in regular arrays, can store single charges, and have excellent optical properties, but so far there have been no demonstrations of spin qubit operations using nanowire quantum dots. Here we demonstrate optical pumping of individual spins trapped in site-controlled nanowire quantum dots, resulting in high-fidelity spin-qubit initialization. This represents the next step towards establishing spins in nanowire quantum dots as quantum memories suitable for use in a large-scale, fault-tolerant quantum computer or repeater based on all-optical control of the spin qubits.

preprint2015arXiv

Single pairs of time-bin entangled photons

Time-bin entangled photons are ideal for long-distance quantum communication via optical fibers. Here we present a source where, even at high creation rates, each excitation pulse generates at most one time-bin entangled pair. This is important for the accuracy and security of quantum communication. Our site-controlled quantum dot generates single polarization-entangled photon pairs, which are then converted, without loss of entanglement strength, into single time-bin entangled photon pairs.

preprint2014arXiv

Gallium Arsenide (GaAs) Quantum Photonic Waveguide Circuits

Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9 +/- 1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6 +/- 1.3% and 84.4 +/- 1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

preprint2014arXiv

Observation of strongly entangled photon pairs from a nanowire quantum dot

A bright photon source that combines high-fidelity entanglement, on-demand generation, high extraction efficiency, directional and coherent emission, as well as position control at the nanoscale is required for implementing ambitious schemes in quantum information processing, such as that of a quantum repeater. Still, all of these properties have not yet been achieved in a single device. Semiconductor quantum dots embedded in nanowire waveguides potentially satisfy all of these requirements; however, although theoretically predicted, entanglement has not yet been demonstrated for a nanowire quantum dot. Here, we demonstrate a bright and coherent source of strongly entangled photon pairs from a position controlled nanowire quantum dot with a fidelity as high as 0.859 +/- 0.006 and concurrence of 0.80 +/- 0.02. The two-photon quantum state is modified via the nanowire shape. Our new nanoscale entangled photon source can be integrated at desired positions in a quantum photonic circuit, single electron devices and light emitting diodes.

preprint2014arXiv

On-chip quantum interference between silicon photon-pair sources

Large-scale integrated quantum photonic technologies will require the on-chip integration of identical photon sources with reconfigurable waveguide circuits. Relatively complex quantum circuits have already been demonstrated, but few studies acknowledge the pressing need to integrate photon sources and waveguide circuits together on-chip. A key step towards such large-scale quantum technologies is the integration of just two individual photon sources within a waveguide circuit, and the demonstration of high-visibility quantum interference between them. Here, we report a silicon-on-insulator device combining two four-wave mixing sources, in an interferometer with a reconfigurable phase shifter. We configure the device to create and manipulate two-colour (non-degenerate) or same-colour (degenerate), path-entangled or path-unentangled photon pairs. We observe up to 100.0+/-0.4% visibility quantum interference on-chip, and up to 95+/-4% off-chip. Our device removes the need for external photon sources, provides a path to increasing the complexity of quantum photonic circuits, and is a first step towards fully-integrated quantum technologies.

preprint2014arXiv

Overcoming power broadening of the quantum dot emission in a pure wurtzite nanowire

One of the key challenges in developing quantum networks is to generate single photons with high brightness, purity, and long temporal coherence. Semiconductor quantum dots potentially satisfy these requirements; however, due to imperfections in the surrounding material, the coherence generally degrades with increasing excitation power yielding a broader emission spectrum. Here we overcome this power broadening regime and demonstrate the longest coherence at exciton saturation where the detection count rates are highest. We detect single-photon count rates of 460,000 counts per second under pulsed laser excitation while maintaining a single-photon purity of greater than 99%. Importantly, the enhanced coherence is attained with quantum dots in ultraclean wurtzite InP nanowires, where the surrounding charge traps are filled by exciting above the wurtzite InP nanowire bandgap. By raising the excitation intensity, the number of possible charge configurations in the quantum dot environment is reduced, resulting in a narrower emission spectrum. Via Monte Carlo simulations we explain the observed narrowing of the emission spectrum with increasing power. Cooling down the sample to 300 mK, we further enhance the single-photon coherence two-fold as compared to operation at 4.5 K, resulting in a homogeneous coherence time, T2, of 1.2 ns.

preprint2013arXiv

Large and tunable photo-thermoelectric effect in single-layer MoS2

We study the photoresponse of single-layer MoS2 field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS2 is dominated by the photo-thermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS2/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS2 that, by an external electric field, can be tuned between -4x10^2 uV/K and -1x10^5 uV/K. This large and tunable Seebeck coefficient of the single-layer MoS2 paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.

preprint2012arXiv

Avalanche amplification of a single exciton in a semiconductor nanowire

Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits.

preprint2012arXiv

Bright single-photon sources in bottom-up tailored nanowires

The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction.

preprint2012arXiv

Fast and efficient photodetection in nanoscale quantum-dot junctions

We report on a photodetector in which colloidal quantum-dots directly bridge nanometer-spaced electrodes. Unlike in conventional quantum-dot thin film photodetectors, charge mobility no longer plays a role in our quantum-dot junctions as charge extraction requires only two individual tunnel events. We find an efficient photoconductive gain mechanism with external quantum-efficiencies of 38 electrons-per-photon in combination with response times faster than 300 ns. This compact device-architecture may open up new routes for improved photodetector performance in which efficiency and bandwidth do not go at the cost of one another.

preprint2012arXiv

Growth and optical properties of axial hybrid III-V/Si nanowires

Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium-arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of anti-phase boundaries. Here, we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium-arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.

preprint2012arXiv

Photon Pair Generation in Silicon Micro-Ring Resonator with Reverse Bias Enhancement

Photon sources are fundamental components for any quantum photonic technology. The ability to generate high count-rate and low-noise correlated photon pairs via spontaneous parametric down-conversion using bulk crystals has been the cornerstone of modern quantum optics. However, future practical quantum technologies will require a scalable integration approach, and waveguide-based photon sources with high-count rate and low-noise characteristics will be an essential part of chip-based quantum technologies. Here, we demonstrate photon pair generation through spontaneous four-wave mixing in a silicon micro-ring resonator, reporting a maximum coincidence-to-accidental (CAR) ratio of 602 (+-) 37, and a maximum photon pair generation rate of 123 MHz (+-) 11 KHz. To overcome free-carrier related performance degradations we have investigated reverse biased p-i-n structures, demonstrating an improvement in the pair generation rate by a factor of up to 2, with negligible impact on CAR.

preprint2012arXiv

Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilising the silicon-on-insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than in previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform.

preprint2011arXiv

Fast path and polarisation manipulation of telecom wavelength single photons in lithium niobate waveguide devices

We demonstrate fast polarisation and path control of photons at 1550 nm in lithium niobate waveguide devices using the electro-optic effect. We show heralded single photon state engineering, quantum interference, fast state preparation of two entangled photons and feedback control of quantum interference. These results point the way to a single platform that will enable the integration of nonlinear single photon sources and fast reconfigurable circuits for future photonic quantum information science and technology.

preprint2011arXiv

Generation of degenerate, factorizable, pulsed squeezed light at telecom wavelengths

We characterize a periodically poled KTP crystal that produces an entangled, two-mode, squeezed state with orthogonal polarizations, nearly identical, factorizable frequency modes, and few photons in unwanted frequency modes. We focus the pump beam to create a nearly circular joint spectral probability distribution between the two modes. After disentangling the two modes, we observe Hong-Ou-Mandel interference with a raw (background corrected) visibility of 86 % (95 %) when an 8.6 nm bandwidth spectral filter is applied. We measure second order photon correlations of the entangled and disentangled squeezed states with both superconducting nanowire single-photon detectors and photon-number-resolving transition-edge sensors. Both methods agree and verify that the detected modes contain the desired photon number distributions.

preprint2011arXiv

Imaging the formation of a p-n junction in a suspended carbon nanotube with scanning photocurrent microscopy

We use scanning photocurrent microscopy (SPCM) to investigate individual suspended semiconducting carbon nanotube devices where the potential profile is engineered by means of local gates. In situ tunable p-n junctions can be generated at any position along the nanotube axis. Combining SPCM with transport measurements allows a detailed microscopic study of the evolution of the band profiles as a function of the gates voltage. Here we study the emergence of a p-n and a n-p junctions out of a n-type transistor channel using two local gates. In both cases the I-V curves recorded for gate configurations corresponding to the formation of the p-n or n-p junction in the SPCM measurements reveal a clear transition from resistive to rectification regimes. The rectification curves can be fitted well to the Shockley diode model with a series resistor and reveal a clear ideal diode behavior.