Researcher profile

Georg Weiss

Georg Weiss contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Normalized gradient flow optimization in the training of ReLU artificial neural networks

The training of artificial neural networks (ANNs) is nowadays a highly relevant algorithmic procedure with many applications in science and industry. Roughly speaking, ANNs can be regarded as iterated compositions between affine linear functions and certain fixed nonlinear functions, which are usually multidimensional versions of a one-dimensional so-called activation function. The most popular choice of such a one-dimensional activation function is the rectified linear unit (ReLU) activation function which maps a real number to its positive part $ \mathbb{R} \ni x \mapsto \max\{ x, 0 \} \in \mathbb{R} $. In this article we propose and analyze a modified variant of the standard training procedure of such ReLU ANNs in the sense that we propose to restrict the negative gradient flow dynamics to a large submanifold of the ANN parameter space, which is a strict $ C^{ \infty } $-submanifold of the entire ANN parameter space that seems to enjoy better regularity properties than the entire ANN parameter space but which is also sufficiently large and sufficiently high dimensional so that it can represent all ANN realization functions that can be represented through the entire ANN parameter space. In the special situation of shallow ANNs with just one-dimensional ANN layers we also prove for every Lipschitz continuous target function that every gradient flow trajectory on this large submanifold of the ANN parameter space is globally bounded. For the standard gradient flow on the entire ANN parameter space with Lipschitz continuous target functions it remains an open problem of research to prove or disprove the global boundedness of gradient flow trajectories even in the situation of shallow ANNs with just one-dimensional ANN layers.

preprint2020arXiv

Resolving the positions of defects in superconducting quantum bits

Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect's coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.