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Jürgen Lisenfeld

Jürgen Lisenfeld contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Probing defect densities at the edges and inside Josephson junctions of superconducting qubits

Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson junctions couple strongest to the qubit, which necessitates optimization of the junction fabrication to mitigate defect formation. Here, we investigate whether defects appear predominantly at the edges or deep within the amorphous tunnel barrier of a junction. For this, we compare defect densities in differently shaped Al/AlO$_x$/Al Josephson junctions that are part of a Transmon qubit. We observe that the number of detectable junction-defects is proportional to the junction area, and does not significantly scale with the junction's circumference, which proposes that defects are evenly distributed inside the tunnel barrier. Moreover, we find very similar defect densities in thermally grown tunnel barriers that were formed either directly after the base electrode was deposited, or in a separate deposition step after removal of native oxide by Argon ion milling.

preprint2020arXiv

Quantum Sensors for Microscopic Tunneling Systems

The anomalous low-temperature properties of glasses arise from intrinsic excitable entities, so-called tunneling Two-Level-Systems (TLS), whose microscopic nature has been baffling solid-state physicists for decades. TLS have become particularly important for micro-fabricated quantum devices such as superconducting qubits, where they are a major source of decoherence. Here, we present a method to characterize individual TLS in virtually arbitrary materials deposited as thin-films. The material is used as the dielectric in a capacitor that shunts the Josephson junction of a superconducting qubit. In such a hybrid quantum system the qubit serves as an interface to detect and control individual TLS. We demonstrate spectroscopic measurements of TLS resonances, evaluate their coupling to applied strain and DC-electric fields, and find evidence of strong interaction between coherent TLS in the sample material. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects and to develop low-loss dielectrics that are urgently required for the advancement of superconducting quantum computers.

preprint2020arXiv

Resolving the positions of defects in superconducting quantum bits

Solid-state quantum coherent devices are quickly progressing. Superconducting circuits, for instance, have already been used to demonstrate prototype quantum processors comprising a few tens of quantum bits. This development also revealed that a major part of decoherence and energy loss in such devices originates from a bath of parasitic material defects. However, neither the microscopic structure of defects nor the mechanisms by which they emerge during sample fabrication are understood. Here, we present a technique to obtain information on locations of defects relative to the thin film edge of the qubit circuit. Resonance frequencies of defects are tuned by exposing the qubit sample to electric fields generated by electrodes surrounding the chip. By determining the defect's coupling strength to each electrode and comparing it to a simulation of the field distribution, we obtain the probability at which location and at which interface the defect resides. This method is applicable to already existing samples of various qubit types, without further on-chip design changes. It provides a valuable tool for improving the material quality and nano-fabrication procedures towards more coherent quantum circuits.