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Shuxia Tao

Shuxia Tao contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2026arXiv

Chemical Origin of Exciton Self-trapping in Cs$_3$Cu$_2$X$_5$ Cesium Copper Halides

Copper halides Cs3Cu2X5 (X=Cl, Br, I) are promising materials for optoelectronic applications due to their high photoluminescence efficiency, stability, and large Stokes shifts. In this work, we uncover the chemical bonding origin of the Stokes shift in these materials using density functional theory calculations. Upon excitation, one [Cu2X5]3- anion undergoes sizeable local distortions, driven by Cu-X and Cu-Cu bond formation. These structural changes coincide with the formation of a self-trapped exciton, where particularly the hole is strongly localized on one anion. Analysis of the electronic structure and bonding reveals reduced antibonding interactions and enhanced bonding character in the excited state, stabilizing the distorted geometry. Our results establish a direct link between orbital-specific hole localization and bond formation. It provides a fundamental understanding of the excitation mechanism in Cs3Cu2X5 and offers design principles to tune optical properties in 0D copper halides.

preprint2022arXiv

Compound Defects in Halide Perovskites: A First-Principles Study of CsPbI$_3$

Lattice defects affect the long-term stability of halide perovskite solar cells. Whereas simple point defects, i.e., atomic interstitials and vacancies, have been studied in great detail, here we focus on compound defects that are more likely to form under crystal growth conditions, such as compound vacancies or interstitials, and antisites. We identify the most prominent defects in the archetype inorganic perovskite CsPbI$_3$, through first-principles density functional theory (DFT) calculations. We find that under equilibrium conditions at room temperature, the antisite of Pb substituting Cs forms in a concentration comparable to those of the most prominent point defects, whereas the other compound defects are negligible. However, under nonequilibrium thermal and operating conditions, other complexes also become as important as the point defects. Those are the Cs substituting Pb antisite, and, to a lesser extent, the compound vacancies of PbI$_2$ or CsPbI$_3$ units, and the I substituting Cs antisite. These compound defects only lead to shallow or inactive charge carrier traps, which testifies to the electronic stability of the halide perovskites. Under operating conditions with a quasi Fermi level very close to the valence band, deeper traps can develop.

preprint2021arXiv

Atomistic insights into the degradation of halide perovskites: a reactive force field molecular dynamics study

Halide perovskites make efficient solar cells due to their exceptional optoelectronic properties, but suffer from several stability issues. The characterization of the degradation processes is challenging because of the limitations in the spatio-temporal resolution in experiments and the absence of efficient computational methods to study the reactive processes. Here, we present the first effort in developing reactive force fields for large scale molecular dynamics simulations of the phase instability and the defect-induced degradation reactions in inorganic CsPbI$_{3}$. We find that the phase transitions are driven by a combination of the anharmonicity of the perovskite lattice with the thermal entropy. At relatively low temperatures, the Cs cations tend to move away from the preferential positions with good contacts with the surrounding metal halide framework, potentially causing its conversion to a non-perovskite phase. Our simulations of defective structures reveal that, although both iodine vacancies and interstitials are very mobile in the perovskite lattice, the vacancies have a detrimental effect on the stability, initiating the decomposition reactions of perovskites to PbI$_{2}$. Our work puts ReaxFF forward as an effective computational framework to study reactive processes in halide perovskites.

preprint2021arXiv

The thermodynamic trends of intrinsic defects in primary halide perovskites: A first-principles study

Defects in halide perovskites play an essential role in determining the efficiency and stability of the resulting optoelectronic devices. Here, we present a systematic study of intrinsic point defects in six primary metal halide perovskites, MAPbI$_3$, MAPbBr$_3$, MAPbCl$_3$, FAPbI$_3$, CsPbI$_3$ and MASnI$_3$, using density functional theory calculations with the SCAN+rVV10 functional. We analyse the impact of changing anions and cations on the defect formation energies and the charge state transitions levels and identify the physical origins underlying the observed trends. Dominant defects in the lead-iodide compounds are the A$^+$ cation interstitials (A = Cs, MA, FA), charge-compensated by I$^-$ interstitials or lead $({2-})$ vacancies. In the lead-bromide and -chloride compounds, halide vacancies become relatively more prominent, and for MAPbBr$_3$, the Pb$^{2+}$ interstitial also becomes important. The trends can be explained in terms of the changes in electrostatic interactions and chemical bonding upon replacing cations and anions. Defect physics in MASnI$_3$ is strongly dominated by tin $({2-})$ vacancies, promoted by the easy oxidation of the tin perovskite. Intrinsically, all compounds are mildly p-doped, except for MASnI$_3$, which is strongly p-doped. All acceptor levels created by defects in the six perovskites are shallow. Some defects, halide vacancies and Pb or Sn interstitials in particular, create deep donor traps. Although these traps might hamper the electronic behavior of MAPbBr$_3$ and MAPbCl$_3$, in iodine-based perovskites their equilibrium concentrations are too small to affect the materials' properties.

preprint2021arXiv

Transferable classical force field for pure and mixed metal halide perovskites parameterized from first principles

Many key features in photovoltaic perovskites occur in relatively long time scales and involve mixed compositions. This requires realistic but also numerically simple models. In this work we present a transferable classical force field to describe the mixed hybrid perovskite MA$_x$FA$_{1-x}$Pb(Br$_y$I$_{1-y}$)$_3$ for variable composition ($\forall x,y \in [0,1]$). The model includes Lennard-Jones and Buckingham potentials to describe the interactions between the atoms of the inorganic lattice and the organic molecule, and the AMBER model to describe intramolecular atomic interactions. Most of the parameters of the force field have been obtained by means of a genetic algorithm previously developed to parameterize the CsPb(Br$_x$I$_{1-x}$)$_3$ perovskite. The algorithm finds the best parameter set that simultaneously fits the DFT energies obtained for several crystalline structures with moderate degrees of distortion with respect to the equilibrium configuration. The resulting model reproduces correctly the XRD patterns, the expansion of the lattice upon I/Br substitution and the thermal expansion coefficients. We use the model to run classical molecular dynamics simulations with up to 8600 atoms and simulation times of up to 40~ns. From the simulations we have extracted the ion diffusion coefficient of the pure and mixed perovskites, presenting for the first time these values obtained by a fully dynamical method using a transferable model fitted to first principles calculations. The values here reported can be considered as the theoretical upper limit for ion migration dynamics induced by halide vacancies in photovoltaic perovskite devices under operational conditions.

preprint2020arXiv

Tuning the Electronic Levels of NiO with Alkali Halides Surface Modifiers for Perovskite Solar Cells

Favorable optoelectronic properties and ease of fabrication make NiO a promising hole transport layer for perovskite solar cells. To achieve maximum efficiency, the electronic levels of NiO need to be optimally aligned with those of the perovskite absorber. Applying surface modifiers by adsorbing species on the NiO surface, is one of the most widespread strategies to tune its energy levels. Alkali halides are simple inorganic surface modifiers that have been extensively used in organic optoelectronics, however, rarely studied in perovskite solar cells. Using density functional theory (DFT) calculations, we investigate the effect of single layer adsorption of twenty different alkali halides on the electronic levels of NiO. Our results show that alkali halides can shift the position of the valence band maximum (VBM) of NiO to a surprisingly large extend in both directions, from -3:10 eV to +1:59 eV. We interpret the direction and magnitude of the shift in terms of the surface dipoles, formed by the adsorbed cations and anions, where the magnitude of the VBM shift is a monotonic function of the surface coverage. Our results indicate that with alkali halide surface modifiers, the electronic levels of NiO can be tuned robustly and potentially match those of many perovskite compositions in perovskite solar cells.

preprint2017arXiv

Accurate and efficient band gap predictions of metal halide perovskites using the DFT-1/2 method: GW accuracy with DFT expense

The outstanding optoelectronics and photovoltaic properties of metal halide perovskites, including high carrier motilities, low carrier recombination rates, and the tunable spectral absorption range are attributed to the unique electronic properties of these materials. While DFT provides reliable structures and stabilities of perovskites, it performs poorly in electronic structure prediction. The relativistic GW approximation has been demonstrated to be able to capture electronic structure accurately, but at an extremely high computational cost. Here we report efficient and accurate band gap calculations of halide metal perovskites by using the approximate quasiparticle DFT-1/2 method. Using AMX3 (A = CH3NH3, CH2NHCH2, Cs; M = Pb, Sn, X=I, Br, Cl) as demonstration, the influence of the crystal structure (cubic, tetragonal or orthorhombic), variation of ions (different A, M and X) and relativistic effects on the electronic structure are systematically studied and compared with experimental results. Our results show that the DFT-1/2 method yields accurate band gaps with the precision of the GW method with no more computational cost than standard DFT. This opens the possibility of accurate electronic structure prediction of sophisticated halide perovskite structures and new materials design for lead-free materials.