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Gang Luo

Gang Luo contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2026arXiv

MoCo-EA: Exploiting Adversarial Mode Connectivity for Efficient Evolutionary Attacks

Evolutionary algorithms for adversarial attacks leverage population-based search to discover perturbations without gradient information, but suffer from inefficient crossover operations that destroy adversarial properties through discrete interpolation. We introduce Mode Connectivity Evolutionary Attack (MoCo-EA), which replaces traditional crossover with a novel Bézier crossover operator that optimizes perturbations along a continuous Bézier curve between parent perturbations. Our key insight is that adversarial examples lie on connected manifolds where intermediate points maintain and often enhance attack effectiveness. We demonstrate three findings: (1) Successful adversarial perturbations exhibit mode connectivity; (2) Intermediate points along optimized paths achieve higher transferability than endpoints; (3) Bézier crossover dramatically outperforms discrete genetic operations while reducing convergence time and query requirements. By exploiting the geometric structure of adversarial space through path optimization, MoCo-EA provides an efficient and reliable method. Our work challenges the traditional view of adversarial examples as isolated points and opens new directions for both attack generation and defense research.

preprint2022arXiv

Forecasting Daily COVID-19 Related Calls in VA Health Care System: Predictive Model Development

Background: COVID-19 has become a challenge worldwide and properly planning of medical resources is the key to combating COVID-19. In the US Veteran Affairs Health Care System (VA), many of the enrollees are susceptible to COVID-19. Predicting the COVID-19 to allocate medical resources promptly becomes a critical issue. When the VA enrollees have COVID-19 symptoms, it is recommended that their first step should be to call the VA Call Center. For confirmed COVID-19 patients, the median time from the first symptom to hospital admission was seven days. By predicting the number of COVID-19 related calls, we could predict imminent surges in healthcare use and plan medical resources ahead. Objective: The study aims to develop a method to forecast the daily number of COVID-19 related calls for each of the 110 VA medical centers. Methods: In the proposed method, we pre-trained a model using a cluster of medical centers and fine-tuned it for individual medical centers. At the cluster level, we performed feature selection to select significant features and automatic hyper-parameter search to select optimal hyper-parameter value combinations for the model. Conclusions: This study proposed an accurate method to forecast the daily number of COVID-19 related calls for VA medical centers. The proposed method was able to overcome modeling challenges by grouping similar medical centers into clusters to enlarge the dataset for training models, and using hyper-parameter search to automatically find optimal hyper-parameter value combinations for models. With the proposed method, surges in health care can be predicted ahead. This allows health care practitioners to better plan medical resources and combat COVID-19.

preprint2022arXiv

Gate-Controlled Quantum Dots Based on Two-Dimensional Materials

Two-dimensional (2D) materials are a family of layered materials exhibiting rich exotic phenomena, such as valley-contrasting physics. Down to single-particle level, unraveling fundamental physics and potential applications including quantum information processing in these materials attracts significant research interests. To unlock these great potentials, gate-controlled quantum dot architectures have been applied in 2D materials and their heterostructures. Such systems provide the possibility of electrical confinement, control, and manipulation of single carriers in these materials. In this review, efforts in gate-controlled quantum dots in 2D materials are presented. Following basic introductions to valley degree of freedom and gate-controlled quantum dot systems, the up-to-date progress in etched and gate-defined quantum dots in 2D materials, especially in graphene and transition metal dichalcogenides, is provided. The challenges and opportunities for future developments in this field, from views of device design, fabrication scheme, and control technology, are discussed. The rapid progress in this field not only sheds light on the understanding of spin-valley physics, but also provides an ideal platform for investigating diverse condensed matter physics phenomena and realizing quantum computation in the 2D limit.

preprint2020arXiv

Coherent phonon dynamics in spatially separated graphene mechanical resonators

Vibrational modes in mechanical resonators provide a promising candidate to interface and manipulate classical and quantum information. The observation of coherent dynamics between distant mechanical resonators can be a key step towards scalable phonon-based applications. Here we report tunable coherent phonon dynamics with an architecture comprising three graphene mechanical resonators coupled in series, where all resonators can be manipulated by electrical signals on control gates. We demonstrate coherent Rabi oscillations between spatially separated resonators indirectly coupled via an intermediate resonator serving as a phonon cavity. The Rabi frequency fits well with the microwave burst power on the control gate. We also observe Ramsey interference, where the oscillation frequency corresponds to the indirect coupling strength between these resonators. Such coherent processes indicate that information encoded in vibrational modes can be transferred and stored between spatially separated resonators, which can open the venue of on-demand phonon-based information processing.

preprint2020arXiv

Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot

In silicon quantum dots (QDs), at a certain magnetic field commonly referred to as the "hot spot", the electron spin relaxation rate (T_1^(-1)) can be drastically enhanced due to strong spin-valley mixing. Here, we experimentally find that with a valley splitting of 78.2 ${\pm}$ 1.6 $μ$eV, this hot spot in spin relaxation can be suppressed by more than 2 orders of magnitude when the in-plane magnetic field is oriented at an optimal angle, about 9° from the [100] sample plane. This directional anisotropy exhibits a sinusoidal modulation with a 180° periodicity. We explain the magnitude and phase of this modulation using a model that accounts for both spin-valley mixing and intravalley spin-orbit mixing. The generality of this phenomenon is also confirmed by tuning the electric field and the valley splitting up to 268.2 ${\pm}$ 0.7 $μ$eV.

preprint2020arXiv

Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing

To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the Si/SiO2 interface. However, the importance of activation annealing is usually ignored. Here, we show that a high vacuum environment for implantation activation is beneficial for improving mobility compared to nitrogen atmosphere. Low-temperature transport measurements of Hall bars show that peak mobility can be improved by a factor of two, reaching 1.5 m^2/(Vs) using high vacuum annealing during implantation activation. Moreover, the charge stability diagram of a single quantum dot is mapped, with no visible disturbance caused by disorder, suggesting possibility of fabricating high-quality quantum dots on commercial wafers. Our results may provide valuable insights into device optimization in silicon-based quantum computing.

preprint2018arXiv

Strong indirect coupling between graphene-based mechanical resonators via a phonon cavity

Mechanical resonators are promising systems for storing and manipulating information. To transfer information between mechanical modes, either direct coupling or an interface between these modes is needed. In previous works, strong coupling between different modes in a single mechanical resonator and direct interaction between neighboring mechanical resonators have been demonstrated. However, coupling between distant mechanical resonators, which is a crucial request for long-distance classical and quantum information processing using mechanical devices, remains an experimental challenge. Here, we report the experimental observation of strong indirect coupling between separated mechanical resonators in a graphene-based electromechanical system. The coupling is mediated by a far-off-resonant phonon cavity through virtual excitations via a Raman-like process. By controlling the resonant frequency of the phonon cavity, the indirect coupling can be tuned in a wide range. Our results may lead to the development of gate-controlled all-mechanical devices and open up the possibility of long-distance quantum mechanical experiments.

preprint2017arXiv

Electrotunable artificial molecules based on van der Waals heterostructures

Quantum confinement has made it possible to detect and manipulate single-electron charge and spin states. The recent focus on two-dimensional (2D) materials has attracted significant interests on possible applications to quantum devices, including detecting and manipulating either single-electron charging behavior or spin and valley degrees of freedom. However, the most popular model systems, consisting of tunable double-quantum-dot molecules, are still extremely difficult to realize in these materials. We show that an artificial molecule can be reversibly formed in atomically thin MoS2 sandwiched in hexagonal boron nitride, with each artificial atom controlled separately by electrostatic gating. The extracted values for coupling energies at different regimes indicate a single-electron transport behavior, with the coupling strength between the quantum dots tuned monotonically. Moreover, in the low-density regime, we observe a decrease of the conductance with magnetic field, suggesting the observation of Coulomb blockade weak anti-localization. Our experiments demonstrate for the first time the realization of an artificial quantum-dot molecule in a gated MoS2 van der Waals heterostructure, which could be used to investigate spin-valley physics. The compatibility with large-scale production, gate controllability, electron-hole bipolarity, and new quantum degrees of freedom in the family of 2D materials opens new possibilities for quantum electronics and its applications.

preprint2017arXiv

Quantum dot behavior in transition metal dichalcogenides nanostructures

Recently, transition metal dichalcogenides (TMDCs) semiconductors have been utilized for investigating quantum phenomena because of their unique band structures and novel electronic properties. In a quantum dot (QD), electrons are confined in all lateral dimensions, offering the possibility for detailed investigation and controlled manipulation of individual quantum systems. Beyond the definition of graphene QDs by opening an energy gap in nanoconstrictions, with the presence of a bandgap, gate-defined QDs can be achieved on TMDCs semiconductors. In this paper, we review the confinement and transport of QDs in TMDCs nanostructures. The fabrication techniques for demonstrating two-dimensional (2D) materials nanostructures such as field-effect transistors and QDs, mainly based on e-beam lithography and transfer assembly techniques are discussed. Subsequently, we focus on transport through TMDCs nanostructures and QDs. With steady improvement in nanoscale materials characterization and using graphene as a springboard, 2D materials offer a platform that allows creation of heterostructure QDs integrated with a variety of crystals, each of which has entirely unique physical properties.