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Albert Fert

Albert Fert appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.str-el

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Published work

19 published item(s)

preprint2022arXiv

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Multiferroic materials based on transition-metal dichalcogenides: Potential platform for reversible control of Dzyaloshinskii-Moriya interaction and skyrmion via electric field

Exploring novel two-dimensional multiferroic materials that can realize electric-field control of two-dimensional magnetism has become an emerging topic in spintronics. Using first-principles calculations, we demonstrate that non-metallic bilayer transition metal dichalcogenides (TMDs) can be an ideal platform for building multiferroics by intercalated magnetic atoms. Moreover, we unveil that with Co intercalated bilayer MoS2, Co(MoS2)2, two energetic degenerate states with opposite chirality of Dzyaloshinskii-Moriya interaction (DMI) are the ground states, indicating electric-field control of the chirality of topologic magnetism such as skyrmions can be realized in this type of materials by reversing the electric polarization. These findings pave the way for electric-field control of topological magnetism in two-dimensional multiferroics with intrinsic magnetoelectric coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Skyrmions-based logic gates in one single nanotrack completely reconstructed via chirality barrier

Logic gates based on magnetic elements are promising candidates for the logic-in-memory applications with nonvolatile data retention, near-zero leakage and scalability. In such spin-based logic device, however, the multi-strip structure and fewer functions are obstacles to improving integration and reducing energy consumption. Here we propose a skyrmions-based single-nanotrack logic family including AND, OR, NOT, NAND, NOR, XOR, and XNOR which can be implemented and reconstructed by building and switching Dzyaloshinskii-Moriya interaction (DMI) chirality barrier on a racetrack memory. Besides the pinning effect of DMI chirality barrier on skyrmions, the annihilation, fusion and shunting of two skyrmions with opposite chirality are also achieved and demonstrated via local reversal of DMI, which are necessary for the design of engineer programmable logic nanotrack, transistor and complementary racetrack memory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure

Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the field-like SOT in W/CoFeB/MgO trilayers through tuning the interfacial spin accumulation. By performing spin Hall magnetoresistance measurement, we find that the CoFeB with enhanced spin dephasing, either generated from larger layer thickness or from proper annealing, can distinctly boost the spin absorption and enhance the interfacial spin mixing conductance G_r. While the damping-like torque efficiency increases with G_r, the field-like torque efficiency turns out to decrease with it. The results suggest that the interfacial spin accumulation, which largely contributes to a field-like torque, is reduced by higher interfacial spin transparency. Our work shows a new path to further improve the performance of SOT-based magnetic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Néel-type skyrmions and their current-induced motion in van der Waals ferromagnet-based heterostructures

Since the discovery of ferromagnetic two-dimensional (2D) van der Waals (vdW) crystals, significant interest on such 2D magnets has emerged, inspired by their appealing properties and integration with other 2D family for unique heterostructures. In known 2D magnets, spin-orbit coupling (SOC) stabilizes perpendicular magnetic anisotropy (PMA). Such a strong SOC could also lift the chiral degeneracy, leading to the formation of topological magnetic textures such as skyrmions through the Dzyaloshinskii-Moriya interaction (DMI). Here, we report the experimental observation of Néel-type chiral magnetic skyrmions and their lattice (SkX) formation in a vdW ferromagnet Fe3GeTe2 (FGT). We demonstrate the ability to drive individual skyrmion by short current pulses along a vdW heterostructure, FGT/h-BN, as highly required for any skyrmion-based spintronic device. Using first principle calculations supported by experiments, we unveil the origin of DMI being the interfaces with oxides, which then allows us to engineer vdW heterostructures for desired chiral states. Our finding opens the door to topological spin textures in the 2D vdW magnet and their potential device application.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Very large Dzyaloshinskii-Moriya interaction in two-dimensional Janus manganese dichalcogenides and its application to realize skyrmion states

The Dzyaloshinskii-Moriya interaction (DMI), which only exists in noncentrosymmetric systems, is responsible for the formation of exotic chiral magnetic states. The absence of DMI in most two-dimensional (2D) magnetic materials is due to their intrinsic inversion symmetry. Here, using first-principles calculations, we demonstrate that significant DMI can be obtained in a series of Janus monolayers of manganese dichalcogenides MnXY in which the difference between X and Y on the opposites sides of Mn breaks the inversion symmetry. In particular, the DMI amplitudes of MnSeTe and MnSTe are comparable to those of state-of-the-art ferromagnet/heavy metal (FM/HM) heterostructures. In addition, by performing Monte Carlo simulations, we find that at low temperatures the ground states of the MnSeTe and MnSTe monolayers can transform from ferromagnetic states with worm-like magnetic domains into the skyrmion states by applying external magnetic field. At increasing temperature, the skyrmion states starts fluctuating above 50 K before an evolution to a completely disordered structure at higher temperature. The present results pave the way for new device concepts utilizing chiral magnetic structures in specially designed 2D ferromagnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Additive interfacial chiral interaction in multilayers for stabilization of small individual skyrmion at room temperature

Facing the ever-growing demand for data storage will most probably require a new paradigm. Nanoscale magnetic skyrmions are anticipated to solve this issue as they are arguably the smallest spin textures in magnetic thin films in nature. We designed cobalt-based multilayered thin films where the cobalt layer is sandwiched between two heavy metals providing additive interfacial Dzyaloshinskii-Moriya interactions, which reach a value close to 2 mJ m-2 in the case of the Ir|Co|Pt asymmetric multilayers. Using a magnetization-sensitive scanning x-ray transmission microscopy technique, we imaged small magnetic domains at very low field in these multilayers. The study of their behavior in perpendicular magnetic field allows us to conclude that they are actually magnetic skyrmions stabilized by the large Dzyaloshinskii-Moriya interaction. This discovery of stable sub-100 nm individual skyrmions at room temperature in a technologically relevant material opens the way for device applications in a near future.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces

Spin-orbit coupling (SOC) describes the relativistic interaction between the spin and momentum degrees of freedom of electrons, and is central to the rich phenomena observed in condensed matter systems. In recent years, new phases of matter have emerged from the interplay between SOC and low dimensionality, such as chiral spin textures and spin-polarized surface and interface states. These low-dimensional SOC-based realizations are typically robust and can be exploited at room temperature. Here we discuss SOC as a means of producing such fundamentally new physical phenomena in thin films and heterostructures. We put into context the technological promise of these material classes for developing spin-based device applications at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin to charge conversion in MoS$_{2}$ monolayer with spin pumping

Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS$_{2}$, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS$_{2}$-metallic stack.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anatomy of Dzyaloshinskii-Moriya Interaction at Co/Pt Interfaces

The Dzyaloshinskii-Moriya Interaction (DMI) between spins is induced by spin-orbit coupling in magnetic materials lacking inversion symmetry. DMI is recognized to play a crucial role at the interface between ferromagnetic (FM) and heavy nonmagnetic (NM) metals to create topological textures called magnetic skyrmions which are very attractive for ultra-dense information storage and spintronic devices. DMI also plays an essential role for fast domain wall (DW) dynamics driven by spin-orbit torques. Here, we present first principles calculations which clarify the main features and microscopic mechanisms of DMI in Co/Pt bilayers. DMI is found to be predominantly located at the interfacial Co layer, originating from spin-orbit energy provided by the adjacent NM layer. Furthermore, no direct correlation is found between DMI and proximity induced magnetism in Pt. These results clarify underlying mechanisms of DMI at FM/NM bilayers and should help optimizing material combinations for skyrmion- and DW-based storage and memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Current-limiting challenges for all-spin logic devices

All-spin logic device (ASLD) has attracted increasing interests as one of the most promising post-CMOS device candidates, thanks to its low power, non-volatility and logic-in-memory structure. Here we investigate the key current-limiting factors and develop a physics-based model of ASLD through nano-magnet switching, the spin transport properties and the breakdown characteristic of channel. First, ASLD with perpendicular magnetic anisotropy (PMA) nano-magnet is proposed to reduce the critical current (Ic0). Most important, the spin transport efficiency can be enhanced by analyzing the device structure, dimension, contact resistance as well as material parameters. Furthermore, breakdown current density (JBR) of spin channel is studied for the upper current limitation. As a result, we can deduce current-limiting conditions and estimate energy dissipation. Based on the model, we demonstrate ASLD with different structures and channel materials (graphene and copper). Asymmetric structure is found to be the optimal option for current limitations. Copper channel outperforms graphene in term of energy but seriously suffers from breakdown current limit. By exploring the current limit and performance tradeoffs, the optimization of ASLD is also discussed. This benchmarking model of ASLD opens up new prospects for design and implementation of future spintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Breathing modes of confined skyrmions in ultrathin magnetic dots

The dynamics of individual magnetic skyrmions confined in ultrathin film dots is studied theoretically. The systems considered are transition metal ferromagnets possessing perpendicular magnetic anisotropy and particular attention is given to the dynamic response of the skyrmions to perpendicular driving fields. By using micromagnetics simulations, it is shown that breathing modes can hybridize with geometrically-quantized spin wave eigenmodes of the circular dots considered, leading to distinct features in the power spectrum that differ to the behavior expected for uniformly magnetized systems. The field dependence of the breathing modes offers a direct means of detecting and characterizing such skyrmion states in experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics

We report on graphene-passivated ferromagnetic electrodes (GPFE) for spin devices. GPFE are shown to act as spin-polarized oxidation-resistant electrodes. The direct coating of nickel with few layer graphene through a readily scalable chemical vapour deposition (CVD) process allows the preservation of an unoxidized nickel surface upon air exposure. Fabrication and measurement of complete reference tunneling spin valve structures demonstrates that the GPFE is maintained as a spin polarizer and also that the presence of the graphene coating leads to a specific sign reversal of the magneto-resistance. Hence, this work highlights a novel oxidation-resistant spin source which further unlocks low cost wet chemistry processes for spintronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spintronics with graphene

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Highly efficient spin transport in epitaxial graphene on SiC

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 μm. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dynamics of Dzyaloshinskii domain walls in ultrathin magnetic films

We explore a new type of domain wall structure in ultrathin films with perpendicular anisotropy, that is influenced by the Dzyaloshinskii-Moriya interaction due to the adjacent layers. This study is performed by numerical and analytical micromagnetics. We show that these walls can behave like Neel walls with very high stability, moving in stationary conditions at large velocities under large fields. We discuss the relevance of such walls, that we propose to call Dzyaloshinskii domain walls, for current-driven domain wall motion under the spin Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic domain wall motion by spin transfer

The discovery that a spin polarized current can exert a large torque on a ferromagnet through a transfusion of spin angular momentum, offers a new way to control a magnetization by simple current injection, without the help of an applied external field. Spin transfer can be used to induce magnetization reversals and oscillations, or to control the position of a magnetic domain wall. In this review, we focus on this last mechanism, which is today the subject of an extensive research, both because the microscopic details for its origin are still debated, but also because promising applications are at stake for non-volatile magnetic memories.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin Hall Effect induced by resonant scattering on impurities in metals

The Spin Hall Effect (SHE) is a promising way for transforming charge currents into spin currents in spintronic devices. Large values of the Spin Hall Angle, the characteristic parameter of the yield of this transformation, have been recently found in noble metals doped with nonmagnetic impurities. We show that this can be explained by resonant scattering off impurity states split by the spin-orbit interaction. We apply our calculation to the interpretation of experiments on copper doped with 5d impurities and we describe the conditions to obtain the largest effects.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.

0 citations0 reviewsNo code linkedOpen access