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Gábor Széchenyi

Gábor Széchenyi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallquant-ph

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Published work

7 published item(s)

preprint2020arXiv

Parity-to-charge conversion for readout of topological Majorana qubits

We theoretically study a scheme to distinguish the two ground states of a one-dimensional topological superconductor, which could serve as a basis for the readout of Majorana qubits. The scheme is based on parity-to-charge conversion, i.e., the ground-state parity of the superconductor is converted to the charge occupation on a tunnel-coupled auxiliary quantum dot. We describe how certain error mechanisms degrade the quality of the parity-to-charge conversion process. We consider (i) leakage due to a strong readout tunnel pulse, (ii) incomplete charge Rabi oscillations due to slow charge noise, and (iii) charge relaxation due to phonon emission and absorption. To describe these effects, we use simple model Hamiltonians based on the ideal Kitaev chain, and draw conclusions to generic one-dimensional topological superconductors wherever possible. In general, the effects of the error mechanisms can be minimized by choosing a smooth shape and an optimal strength for the readout tunnel pulse. In a case study based on InAs heterostructure device parameters, we estimate that the parity-to-charge conversion error is mainly due to slow charge noise for weak tunnel pulses and leakage for strong tunnel pulses.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Control of valley dynamics in silicon quantum dots in the presence of an interface step

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic states of a silicon quantum dot can form a valley qubit. In this work, we show that a single-atom high step at the silicon/barrier interface induces a strong interaction of the qubit and in-plane electric fields, and analyze the consequences of this enhanced interaction on the dynamics of the qubit. The charge densities of the qubit states are deformed differently by the interface step, allowing non-demolition qubit readout via valley-to-charge conversion. A gate-induced in-plane electric field together with the interface step enables fast control of the valley qubit via electrically driven valley resonance. We calculate single- and two-qubit gate times, as well as relaxation and dephasing times, and present predictions for the parameter range where the gate times can be much shorter than the relaxation time and dephasing is reduced.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transfer matrix approach for the Kerr and Faraday rotation in layered nanostructures

To study the optical rotation of the polarization of light incident on multilayer systems consisting of atomically thin conductors and dielectric multilayers we present a general method based on transfer matrices. The transfer matrix of the atomically thin conducting layer is obtained using the Maxwell equations. We derive expressions for the Kerr (Faraday) rotation angle and for the ellipticity of the reflected (transmitted) light as a function of the incident angle and polarization of the light. The method is demonstrated by calculating the Kerr (Faraday) angle for bilayer graphene in the quantum anomalous Hall state placed on the top of dielectric multilayers. The optical conductivity of the bilayer graphene is calculated in the framework of a four-band model.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon

Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time $T_1$ affected as the electron is shuttled between the donor and the interface? We focus on the example of the `flip-flop qubit' [Tosi et al., arXiv:1509.08538v1], defined as a combination of the nuclear and electronic states of a phosphorous donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of $100 \, μ\text{s}$, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Shape-sensitive Pauli blockade in a bent carbon nanotube

Motivated by a recent experiment [F. Pei et al., Nat. Nanotech. 7, 630 (2012)], we theoretically study the Pauli blockade transport effect in a double quantum dot embedded in a bent carbon nanotube. We establish a model for Pauli blockade, taking into account the strong g-factor anisotropy that is linked to the local orientation of the nanotube axis in each quantum dot. We provide a set of conditions under which our model is approximately mapped to the spin-blockade model of Jouravlev and Nazarov [O. N. Jouravlev and Y. V. Nazarov, Phys. Rev. Lett. 96, 176804 (2006)]. The results we obtain for the magnetic anisotropy of the leakage current, together with their qualitative geometrical explanation, provide a possible interpretation of previously unexplained experimental results. Furthermore, we find that in a certain parameter range, the leakage current becomes highly sensitive to the shape of the tube, and this sensitivity increases with increasing g-factor anisotropy. This mutual dependence of the electron transport and the tube shape allows for mechanical control of the leakage current, and for characterization of the tube shape via measuring the leakage current.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Current hot spot in the spin-valley blockade in carbon nanotubes

We present a theoretical study of the spin-valley blockade transport effect in a double quantum dot defined in a straight carbon nanotube. We find that intervalley scattering due to short-range impurities completely lifts the spin-valley blockade and induces a large leakage current in a certain confined range of the external magnetic field vector. This current hot spot emerges due to different effective magnetic fields acting on the spin-valley qubit states of the two quantum dots. Our predictions are compared to a recent measurement [F. Pei et al., Nat. Nanotech. 7, 630 (2012)]. We discuss the implications for blockade-based schemes for qubit initialization/readout, and motion sensing of nanotube-based mechanical resonators.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Maximal Rabi frequency of an electrically driven spin in a disordered magnetic field

We present a theoretical study of the spin dynamics of a single electron confined in a quantum dot. Spin dynamics is induced by the interplay of electrical driving and the presence of a spatially disordered magnetic field, the latter being transverse to a homogeneous magnetic field. We focus on the case of strong driving, i.e., when the oscillation amplitude $A$ of the electron's wave packet is comparable to the quantum dot length $L$. We show that electrically driven spin resonance can be induced in this system by subharmonic driving, i.e., if the excitation frequency is an integer fraction (1/2, 1/3, etc) of the Larmor frequency. At strong driving we find that (i) the Rabi frequencies at the subharmonic resonances are comparable to the Rabi frequency at the fundamental resonance, and (ii) at each subharmonic resonance, the Rabi frequency can be maximized by setting the drive strength to an optimal, finite value. Our simple model is applied to describe electrical control of a spin-valley qubit in a weakly disordered carbon nanotube.

0 citations0 reviewsNo code linkedOpen access