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Dimitrie Culcer

Dimitrie Culcer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.othercond-mat.supr-con

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Published work

44 published item(s)

preprint2022arXiv

Increased Phase Coherence Length in a Porous Topological Insulator

The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlapping in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator phase. Investigating workable device structures, we uncover fundamental sub-threshold limits posed by the gating mechanism that effectuates such a transition, thereby emphasizing the need for innovations on materials and device structures. Detailing the complex band translation physics related to the quantum spin Hall effect phase transition, it is shown that a gating strategy to beat the thermionic limit can be engineered at the cost of sacrificing the dissipationless ON-state conduction. It is then demonstrated that an out-of-plane antiferromagnetic exchange introduced in the material via proximity coupling can incite transitions between the quantum spin-valley Hall and the spin quantum anomalous Hall phase, which can ultimately ensure the topological robustness of the ON state while surpassing the thermionic limit. Our work thus underlines the operational criteria for building topological transistors using quantum materials that can overcome the Boltzmann's tyranny while preserving the topological robustness.

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preprint2022arXiv

Ultrafast coherent control of a hole spin qubit in a germanium quantum dot

Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in germanium (Ge) intriguing candidates for spin qubits with rapid, all-electrical coherent control. Here we report ultrafast single-spin manipulation in a hole-based double quantum dot in a germanium hut wire (GHW). Mediated by the strong SOI, a Rabi frequency exceeding 540 MHz is observed at a magnetic field of 100 mT, setting a record for ultrafast spin qubit control in semiconductor systems. We demonstrate that the strong SOI of heavy holes (HHs) in our GHW, characterized by a very short spin-orbit length of 1.5 nm, enables the rapid gate operations we accomplish. Our results demonstrate the potential of ultrafast coherent control of hole spin qubits to meet the requirement of DiVincenzo's criteria for a scalable quantum information processor.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Unidirectional valley-contrasting photo-current in strained transition metal dichalcogenide monolayers

We examine the full static non-linear optical response of uniaxially strained transition metal dichalcogenide monolayers doped with a finite carrier density in the conduction band, in the presence of disorder. We find that the customary shift current is suppressed, yet we identify a strong, valley-dependent non-reciprocal response, which we term a \textit{unidirectional valley-contrasting photo-current} (UVCP). This DC current originates from the combined effect of strain and Kramers symmetry breaking by trigonal warping, while the contributions due to individual valleys can be separated by introducing an energy offset between them by means of a magnetization. This latter fact enables one to monitor inter-valley transitions. The UVCP is proportional to the mobility and is enhanced by the excitonic Coulomb interaction and inter-valley scattering, as well as by a top gate bias. We discuss detection strategies in state-of-the-art experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anomalous plasmon mode in strained Weyl semimetals

An exotic anomalous plasmon mode is found in strained Weyl semimetals utilizing the topological Landau Fermi liquid and chiral kinetic theories, in which quasiparticle interactions are modeled by long-range Coulomb and residual short-range interactions. The gapped collective mode is derived from the dynamical charge pumping between the bulk and the surface and behaves like $k_{\rm F}^{-1}$. The charge oscillations are accurately determined by the coupling between the induced electric field and the background pseudofields. This novel mode unidirectionally disperses along the pseudomagnetic field and manifests itself in an unusual thermal conductivity in apparent violation of the Wiedemann-Franz law. The excitation can be achieved experimentally by mechanical vibrations of the crystal lattice in the THz regime.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Non-linear antidamping spin-orbit torque originating from intra-band transport on the warped surface of a topological insulator

Motivated by recent experiments observing a large antidamping spin-orbit torque (SOT) on the surface of a three-dimensional topological insulator, we investigate the origin of the current-induced SOT beyond linear-response theory. We find that a strong antidamping SOT arises from intraband transitions in non-linear response, and does not require interband transitions as is the case in linear transport mechanisms. The joint effect of warping and an in-plane magnetization generates a non-linear antidamping SOT which can exceed the intrinsic one by several orders of magnitude, depending on warping parameter and the position of Fermi energy, and exhibits a complex dependence on the azimuthal angle of the magnetization. This nonlinear SOT provides an alternative explanation of the observed giant SOT in recent experiments.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Semiclassical equations of motion for disordered conductors: extrinsic interband velocity, corrected collision integral and spin-orbit torques

The semiclassical equations of motion are widely used to describe carrier transport in conducting materials. Nevertheless, the substantial challenge of incorporating disorder systematically into the semiclassical model persists, leading to quantitative inaccuracies and occasionally erroneous predictions for the expectation values of physical observables. In the present work we provide a general prescription for reformulating the semiclassical equations of motion for carriers in disordered conductors by taking the quantum mechanical density matrix as the starting point. We focus on external electric fields, without magnetic fields, and spin-independent disorder. The density matrix approach allows averaging over impurity configurations, and the trace of the velocity operator with the disorder-averaged density matrix can be reinterpreted as the semiclassical velocity weighted by the Boltzmann distribution function. Through this rationale the well-known intrinsic group and anomalous velocities are trivially recovered, while we demonstrate the existence of an extrinsic interband velocity, namely a disorder correction to the semiclassical velocity of Bloch electrons, mediated by the interband matrix elements of the Berry connection. A similar correction is present in the non-equilibrium expectation value of the spin operator, contributing to spin-orbit torques. To obtain agreement with diagrammatic approaches the scattering term in the Boltzmann equation is corrected to first order in the electric field, and the Boltzmann equation is solved up to sub-leading order in the disorder potential. Our prescription ensures all vertex corrections present in diagrammatic treatments are taken into account, and to illustrate this we discuss model cases in topological insulators, including the anomalous Hall effect as well as spin-orbit torques.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By developing a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann's limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Pseudospin-electric coupling for holes beyond the envelope-function approximation

In the envelope-function approximation, interband transitions produced by electric fields are neglected. However, electric fields may lead to a spatially local ($k$-independent) coupling of band (internal, pseudospin) degrees of freedom. Such a coupling exists between heavy-hole and light-hole (pseudo-)spin states for holes in III-V semiconductors, such as GaAs, or in group IV semiconductors (germanium, silicon, ...) with broken inversion symmetry. Here, we calculate the electric-dipole (pseudospin-electric) coupling for holes in GaAs from first principles. We find a transition dipole of $0.5$ debye, a significant fraction of that for the hydrogen-atom $1s\to2p$ transition. In addition, we derive the Dresselhaus spin-orbit coupling that is generated by this transition dipole for heavy holes in a triangular quantum well. A quantitative microscopic description of this pseudospin-electric coupling may be important for understanding the origin of spin splitting in quantum wells, spin coherence/relaxation ($T_2^*/T_1$) times, spin-electric coupling for cavity-QED, electric-dipole spin resonance, and spin non-conserving tunneling in double quantum dot systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes

The Zeeman interaction is a quantum mechanical effect that underpins spin-based quantum devices such as spin qubits. Typically, identification of the Zeeman interaction needs a large out-of-plane magnetic field coupled with ultralow temperatures, which limits the practicality of spin-based devices. However, in two-dimensional (2D) semiconductor holes, the strong spin-orbit interaction causes the Zeeman interaction to couple the spin, the magnetic field, and the momentum, and has terms with different winding numbers. In this work, we demonstrate a physical mechanism by which the Zeeman terms can be detected in classical transport. The effect we predict is very strong, and tunable by means of both the density and the in-plane magnetic field. It is a direct signature of the topological properties of the 2D hole system, and a manifestation in classical transport of an effect stemming from relativistic quantum mechanics. We discuss experimental observation and implications for quantum technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Resonant photovoltaic effect in doped magnetic semiconductors

The rectified non-linear response of a clean undoped semiconductor to an AC electric field includes a well known intrinsic contribution -- the shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears that is due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect (RPE), produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the RPE for a model of the surface states of a magnetized topological insulator.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi

A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic transport has been demonstrated in 2DTIs over short distances, larger samples show significant backscattering and a nearly temperature-independent resistance whose origin is unclear. 2DTI edges have shown a spin polarisation, however the degree of helicity is difficult to quantify from spin measurements. Here, we study 2DTI few-layer Na3Bi on insulating Al2O3. A non-local conductance measurement geometry enables sensitive detection of the edge conductance in the topological regime, with an edge mean free path ~100 nm. Magnetic field suppresses spin-flip scattering in the helical edges, resulting in a giant negative magnetoresistance (GNMR), up to 80% at 0.9 T. Comparison to theory indicates >98% of scattering is helical spin scattering significantly exceeding the maximum (67%) expected for a non-helical metal. GNMR, coupled with non-local measurements demonstrating edge conduction, thus provides an unambiguous experimental signature of helical edges that we expect to be generically useful in understanding 2DTIs.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Transport in two-dimensional topological materials: recent developments in experiment and theory

We review theoretical and experimental highlights in transport in two-dimensional materials focussing on key developments over the last five years. Topological insulators are finding applications in magnetic devices, while Hall transport in doped samples and the general issue of topological protection remain controversial. In transition metal dichalcogenides valley-dependent electrical and optical phenomena continue to stimulate state-of-the-art experiments. In Weyl semimetals the properties of Fermi arcs are being actively investigated. A new field, expected to grow in the near future, focuses on the non-linear electrical and optical responses of topological materials, where fundamental questions are once more being asked about the intertwining roles of the Berry curvature and disorder scattering. In topological superconductors the quest for chiral superconductivity, Majorana fermions and topological quantum computing is continuing apace.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a $\mathrm{GaAs/Al_xGa_{1-x}As}$ heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Control of valley dynamics in silicon quantum dots in the presence of an interface step

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic states of a silicon quantum dot can form a valley qubit. In this work, we show that a single-atom high step at the silicon/barrier interface induces a strong interaction of the qubit and in-plane electric fields, and analyze the consequences of this enhanced interaction on the dynamics of the qubit. The charge densities of the qubit states are deformed differently by the interface step, allowing non-demolition qubit readout via valley-to-charge conversion. A gate-induced in-plane electric field together with the interface step enables fast control of the valley qubit via electrically driven valley resonance. We calculate single- and two-qubit gate times, as well as relaxation and dephasing times, and present predictions for the parameter range where the gate times can be much shorter than the relaxation time and dephasing is reduced.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Coulomb drag in topological insulator films

We study Coulomb drag between the top and bottom surfaces of topological insulator films. We derive a kinetic equation for the thin-film spin density matrix containing the full spin structure of the two-layer system, and analyze the electron-electron interaction in detail in order to recover all terms responsible for Coulomb drag. Focusing on typical topological insulator systems, with film thicknesses d up to 6 nm, we obtain numerical and approximate analytical results for the drag resistivity $ρ_\text{D}$ and find that $ρ_\text{D}$ is proportional to $T^2d^{-4}n^{-3/2}_{\text{a}}n^{-3/2}_{\text{p}}$ at low temperature T and low electron density $n_{\text{a,p}}$, with a denoting the active layer and p the passive layer. In addition, we compare $ρ_{\text{D}}$ with graphene, identifying qualitative and quantitative differences, and we discuss the multi valley case, ultra thin films and electron-hole layers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Computing with Acceptor Spins in Silicon

The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can be designed. Whereas a light-hole spin qubit was introduced recently [Phys. Rev. Lett. 116, 246801 (2016)], here we present analytical and numerical results proving that a heavy-hole spin qubit can be reliably initialised, rotated and entangled by electrical means alone. This is due to strong Rashba-like spin-orbit interaction terms enabled by the interface inversion asymmetry. Single qubit rotations rely on electric-dipole spin resonance (EDSR), which is strongly enhanced by interface-induced spin-orbit terms. Entanglement can be accomplished by Coulomb exchange, coupling to a resonator, or spin-orbit induced dipole-dipole interactions. By analysing the qubit sensitivity to charge noise, we demonstrate that interface-induced spin-orbit terms are responsible for sweet spots in the dephasing time T2* as a function of the top gate electric field, which are close to maxima in the EDSR strength, where the EDSR gate has high fidelity. We show that both qubits can be described using the same starting Hamiltonian, and by comparing their properties we show that the complex interplay of bulk and interface-induced spin-orbit terms allows a high degree of electrical control and makes acceptors potential candidates for scalable quantum computation in Si.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Do micromagnets expose spin qubits to charge and Johnson noise?

An ideal quantum dot spin qubit architecture requires a local magnetic field for one-qubit rotations. Such an inhomogeneous magnetic field, which could be implemented via a micromagnet, couples the qubit subspace with background charge fluctuations causing dephasing of spin qubits. In addition, a micromagnet generates magnetic field evanescent-wave Johnson noise. We derive an effective Hamiltonian for the combined effect of a slanting magnetic field and charge noise on a single-spin qubit and estimate the free induction decay dephasing times T2* for Si and GaAs. The effect of the micromagnet on Si qubits is comparable in size to that of spin-orbit coupling at an applied field of B=1T, whilst dephasing in GaAs is expected to be dominated by spin-orbit coupling. Tailoring the magnetic field gradient can efficiently reduce T2* in Si. In contrast, the Johnson noise generated by a micromagnet will only be important for highly coherent spin qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Charge noise, spin-orbit coupling, and coherence of single-spin qubits

Spin-orbit coupling is ubiquitous in quantum dot quantum computing architectures, and makes spin qubits susceptible to charge noise. We derive a Hamiltonian describing the effect of spin-orbit and noise on a single-spin qubit in a quantum dot. Relaxation is due to noise coupling different orbital levels and is dominated by screened whole charge defects near the dot. Dephasing stems from noise causing relative fluctuations between orbital levels, and is driven by screened whole charge defects and unscreened dipole defects in the substrate. Dephasing times are vastly different between common materials such as Si and GaAs. They can be enhanced by increasing gate fields, choosing materials with weak spin-orbit such as Si, making dots narrower, or using accumulation dots.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Proximity Effects in Topological Insulator Heterostructures

Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent works on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have established the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Screening, Friedel oscillations and low-temperature conductivity in topological insulator thin films

In thin topological insulator films, the top and bottom surfaces are coupled by tunneling, which restores backscattering and strongly affects screening. We calculate the dielectric function in the random phase approximation obtaining a closed-form result. Unlike independent TI surfaces, the dielectric function of thin films exhibits a valley as a function of wavenumber $q$ and tunneling, as well as a cusp at $q=2k_F$, with $k_F$ the Fermi wave vector. As a result of the cusp, Friedel oscillations decay with distance $r$ as $\sin(2k_Fr)/(2k_Fr)^2$. We determine the longitudinal conductivity $σ$ in the first Born approximation at low temperatures where screened impurities provide the dominant scattering mechanism. At high electron densities $n_e$, $σ\propto n_e$, while at low densities $σ\propto n_e^{3/2}$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Anomalous spin precession and spin Hall effect in semiconductor quantum wells

Spin-orbit (SO) interactions give a spin-dependent correction r_so to the position operator, referred to as the anomalous position operator. We study the contributions of r_so to the spin-Hall effect (SHE) in quasi two-dimensional (2D) semiconductor quantum wells with strong band structure SO interactions that cause spin precession. The skew scattering and side-jump scattering terms in the SHE vanish, but we identify two additional terms in the SHE, due to r_so, which have not been considered in the literature so far. One term reflects the modification of the spin precession due to the action of the external electric field (the field drives the current in the quantum well), which produces, via r_so, an effective magnetic field perpendicular to the plane of the quantum well. The other term reflects a similar modification of the spin precession due to the action of the electric field created by random impurities, and appears in a careful formulation of the Born approximation. We refer to these two effects collectively as anomalous spin precession and we note that they contribute to the SHE to the first order in the SO coupling constant even though they formally appear to be of second order. In electron systems with weak momentum scattering, the contribution of the anomalous spin precession due to the external electric field equals 1/2 the usual side-jump SHE, while the additional impurity-dependent contribution depends on the form of the band structure SO coupling. For band structure SO linear in wave vector the two additional contributions cancel. For band structure SO cubic in wave vector only the contribution due to external electric field is present, and can be detected through its density dependence. In 2D hole systems both anomalous spin precession contributions vanish identically.

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preprint2013arXiv

Coulomb interaction and valley-orbit coupling in Si quantum dots

The valley-orbit coupling in a few-electron Si quantum dot is expected to be a function of its occupation number N. We study the spectrum of multivalley Si quantum dots for 2 <= N <= 4, showing that, counterintuitively, electron-electron interaction effects on the valley-orbit coupling are negligible. For N=2 they are suppressed by valley interference, for N=3 they vanish due to spinor overlaps, and for N = 4 they cancel between different pairs of electrons. To corroborate our theoretical findings, we examine the experimental energy spectrum of a few-electron metal-oxide-semiconductor quantum dot. The measured spin-valley state filling sequence in a magnetic field reveals that the valley-orbit coupling is definitively unaffected by the occupation number.

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preprint2013arXiv

Dephasing of Si singlet-triplet qubits due to charge and spin defects

We study the effect of charge and spin noise on singlet-triplet qubits in Si quantum dots. We set up a theoretical framework aimed at enabling experiment to efficiently identify the most deleterious defects, and complement it with the knowledge of defects gained in decades of industrial and academic work. We relate the dephasing rates $Γ_ϕ$ due to various classes of defects to experimentally measurable parameters such as charge dipole moment, spin dipole moment and fluctuator switching times. We find that charge fluctuators are more efficient in causing dephasing than spin fluctuators.

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preprint2013arXiv

NV-Center Based Digital Quantum Simulation of a Quantum Phase Transition in Topological Insulators

Nitrogen-vacancy centers in diamond are ideal platforms for quantum simulation, which allows one to handle problems that are intractable theoretically or experimentally. Here we propose a digital quantum simulation scheme to simulate the quantum phase transition occurring in an ultrathin topological insulator film placed in a parallel magnetic field [Zyuzin \textit{et al.}, Phys. Rev. B \textbf{83}, 245428 (2011)]. The quantum simulator employs high quality spin qubits achievable in nitrogen-vacancy centers and can be realized with existing technology. The problem can be mapped onto the Hamiltonian of two entangled qubits represented by the electron and nuclear spins. The simulation uses the Trotter algorithm, with an operation time of the order of 100 $μ$s for each individual run.

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preprint2013arXiv

Suppression of the Kondo Resistivity Minimum in Magnetic Topological Insulators

Magnetically-doped topological insulators are intensely studied in the search for exotic phenomena such as the quantum anomalous Hall effect. The interplay of electronic and impurity degrees of freedom leads to the Kondo effect, an increase in the resistivity at temperatures $T < T_K$, the Kondo temperature. We study this effect in chiral surface state transport at $T \ge T_K$ in the metallic regime, starting from the quantum Liouville equation and including Kondo scattering to all orders, as well as phonon and non-magnetic impurity scattering. Unlike spin-orbit coupled metals and semiconductors, $T_K$ is suppressed by spin-momentum locking which prevents the formation of a Kondo screening cloud. We expect a resistivity $ρ_{xx} \propto T^4$ primarily due to phonons.

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preprint2013arXiv

Topological Proximity Effects in Graphene Nanoribbon Heterostructures

Topological insulators (TI) are bulk insulators that possess robust chiral conducting states along their interfaces with normal insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to many exotic physical phenomena. Here we establish the potential existence of "topological proximity effects" at the interface of a topological graphene nanoribbon (GNR) and a normal GNR. Specifically, we show that the location of the topological edge states exhibits versatile tunability as a function of the interface orientation, as well as the strengths of the interface coupling and spin-orbit coupling in the normal GNR. For zigzag and bearded GNRs, the topological edge state can be tuned to be either at the interface or outer edge of the normal ribbon. For armchair GNR, the potential location of the topological edge state can be further enriched to be at the edge of or within the normal ribbon, at the interface, or diving into the topological GNR. We also discuss potential experimental realization of the predicted topological proximity effects, which may pave the way for integrating the salient functionality of TI and graphene in future device applications.

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preprint2012arXiv

Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling

A gate electric field has a small but non-negligible effect on the phase of the valley-orbit coupling in Si quantum dots. Finite interdot tunneling between valley eigenstates in a double quantum dot is enabled by a small difference in the phase of the valley-orbit coupling between the two dots, and it in turn allows controllable rotations of two-dot valley eigenstates at a level anticrossing. We present a comprehensive analytical discussion of this process, with estimates for realistic structures.

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preprint2012arXiv

Electron-electron interactions in non-equilibrium bilayer graphene

Conducting steady-states of doped bilayer graphene have a non-zero sublattice pseudospin polarization. Electron-electron interactions renormalize this polarization even at zero temperature, when the phase space for electron-electron scattering vanishes. We show that because of the strength of interlayer tunneling, electron-electron interactions nevertheless have a negligible influence on the conductivity which vanishes as the carrier number density goes to zero. The influence of interactions is qualitatively weaker than in the comparable cases of single-layer graphene or topological insulators, because the momentum-space layer pseudospin vorticity is 2 rather than 1. Our study relies on the quantum Liouville equation in the first Born approximation with respect to the scattering potential, with electron-electron interactions taken into account self-consistently in the Hartree-Fock approximation and screening in the random phase approximation. Within this framework the result we obtain is exact.

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preprint2012arXiv

Valley-based noise-resistant quantum computation using Si quantum dots

We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.

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preprint2011arXiv

Anomalous Hall response of topological insulators

The anomalous Hall effect due to the surface conduction band of 3D topological insulators with an out-of-plane magnetization is \textit{always} dominated by an intrinsic topological term of the order of the conductivity quantum. We determine the contributions due to the band structure, skew scattering, side jump and magnetic impurities on the same footing, demonstrating that the topological term, renormalized due to disorder, overwhelms all other terms, providing an unmistakable signature of $Z_2$ topological order. Uncharacteristically, skew scattering contributes in the Born approximation as well as in the third order in the scattering potential, while in addition to the side-jump scattering term we identify a novel intrinsic side-jump term of a similar magnitude. These, however, never overwhelm the topological contribution.

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preprint2011arXiv

Linear response theory of interacting topological insulators

Chiral surface states in topological insulators are robust against interactions, non-magnetic disorder and localization, yet topology does not yield protection in transport. This work presents a theory of interacting topological insulators in an external electric field, starting from the quantum Liouville equation for the many-body density matrix. Out of equilibrium, topological insulators acquire a current-induced spin polarization. Electron-electron interactions renormalize the non-equilibrium spin polarization and charge conductivity, and disorder in turn enhances this renormalization by a factor of two. Topological insulator phenomenology remains intact in the presence of interactions out of equilibrium, and an exact correspondence exists between the mathematical frameworks necessary for the understanding of the interacting and non-interacting problems.

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preprint2011arXiv

Transport in three-dimensional topological insulators: theory and experiment

This article reviews recent theoretical and experimental work on transport due to the surface states of three-dimensional topological insulators. The theoretical focus is on longitudinal transport in the presence of an electric field, including Boltzmann transport, quantum corrections and weak localization, as well as longitudinal and Hall transport in the presence of both electric and magnetic fields and/or magnetizations. Special attention is paid to transport at finite doping, to the $π$-Berry phase, which leads to the absence of backscattering, Klein tunneling and half-quantized Hall response. Signatures of surface states in ordinary transport and magnetotransport are clearly identified. The review also covers transport experiments of the past years, reviewing the initial obscuring of surface transport by bulk transport, and the way transport due to the surface states has increasingly been identified experimentally. Current and likely future experimental challenges are given prominence and the current status of the field is assessed.

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preprint2010arXiv

Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation

We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for implementing spin qubits in quantum dots. One scheme uses spin states in a single dot and the interdot exchange coupling controls interactions between unbiased dots. The other scheme employs the singlet and triplet states of a biased double dot as the two-level system making up the qubit and exchange controls the energy splitting of the levels. Exchange in these two configurations depends differently on system parameters. Our work relies on the Heitler-London approximation and the Hund-Mulliken molecular orbital method. The results we obtain enable us to investigate the sensitivity of the system to background charge fluctuations and determine the conditions under which optimal spots, at which the influence of the charge noise is minimized, may exist in Si double quantum dot structures.

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preprint2010arXiv

Interface roughness, valley-orbit coupling and valley manipulation in quantum dots

We present a systematic study of interface roughness and its effect on coherent dynamical processes in quantum dots. The potential due to a sharp, flat interface lifts the degeneracy of the lowest energy valleys and yields a set of valley eigenstates. Interface roughness is characterized by fluctuations in the location of the interface and in the magnitude of the potential step. Variations in the position of the interface, which are expected to occur on the length scale of the lattice constant, reduce the magnitude of the valley-orbit coupling. Variations in the size of the interface potential step alter the magnitude of the valley-orbit coupling and induce transitions between different valley eigenstates in dynamics involving two (or more) dots. Such transitions can be studied experimentally by manipulating the bias between two dots and can be detected by charge sensing. However, if the random variable characterizing the position of the interface is correlated over distances of the order of a quantum dot, which is unlikely but possible, the phase of the valley-orbit coupling may be different in adjacent dots. In this case tunneling between like and opposite valley eigenstates is in effect a random variable and cannot be controlled. We suggest a resonant tunneling experiment that can identify the matrix elements for tunneling between like and opposite valley eigenstates.

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preprint2010arXiv

Quantum dot spin qubits in Silicon: Multivalley physics

Research on Si quantum dot spin qubits is motivated by the long spin coherence times measured in Si, yet the orbital spectrum of Si dots is increased as a result of the valley degree of freedom. The valley degeneracy may be lifted by the interface potential, which gives rise to a valley-orbit coupling, but the latter depends on the detailed structure of the interface and is generally unknown a priori. These facts motivate us to provide an extensive study of spin qubits in Si double quantum dots, accounting fully for the valley degree of freedom and assuming no prior knowledge of the valley-orbit coupling. For single-spin qubits we analyze the spectrum of a multivalley double quantum dot, discuss the initialization of one qubit, identify the conditions for the lowest energy two-electron states to be a singlet and a triplet well separated from other states, and determine analytical expressions for the exchange splitting. For singlet-triplet qubits we analyze the single-dot spectrum and initialization process, the double-dot spectrum, singlet-triplet mixing in an inhomogeneous magnetic field and the peculiarities of spin blockade in multivalley qubits. We review briefly the hyperfine interaction in Si and discuss its role in spin blockade in natural Si, including intravalley and intervalley effects. We study the evolution of the double-dot spectrum as a function of magnetic field. We address briefly the situation in which the valley-orbit coupling is different in each dot due to interface roughness. We propose a new experiment for measuring the valley splitting in a single quantum dot. We discuss the possibility of devising other types of qubits in Si QDs, and the size of the intervaley coupling due to the Coulomb interaction.

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preprint2010arXiv

Two-dimensional surface charge transport in topological insulators

We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy $ε_F$ and transport scattering time $τ$ satisfy $ε_F τ/\hbar \gg 1$, but sufficiently low that $ε_F$ lies below the bottom of the conduction band. Our theory is based on the spin density matrix and takes the quantum Liouville equation as its starting point. The scattering term is determined accurately to linear order in the impurity density. We consider scattering by charged impurities and short-range scatterers such as surface roughness. We calculate also the polarization function in topological insulators, emphasizing the differences from graphene. We find that the main contribution to the conductivity is $\propto n_i^{-1}$, where $n_i$ is the impurity density, and will have different carrier density dependencies for different forms of scattering. Two different contributions to this conductivity are traced to the scalar and spin-dependent terms in the Hamiltonian and their relative weight depends on the doping density. Our results contain all contributions to the conductivity to orders zero and one in the impurity density. We discuss also a way to determine the dominant scattering angles by studying the ratio of the transport relaxation time to the Bloch lifetime as a function of the Wigner-Seitz radius $r_s$. We also discuss the effect on the surface states of adding metallic contacts.

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preprint2009arXiv

Current-induced spin torques in III-V ferromagnetic semiconductors

We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences from spin torques in ferromagnetic metals. We determine the spin density in an electric field in the weak momentum scattering regime, demonstrating that the torque on the magnetization is intimately related to spin precession under the action of both the spin-orbit interaction and the exchange field characteristic of ferromagnetism. The spin polarization excited by the electric field is smaller than in ferromagnetic metals and, due to lack of angular momentum conservation, cannot be expressed in a simple closed vectorial form. Remarkably, scalar and spin-dependent scattering do not affect the result. We use our results to estimate the velocity of current-driven domain walls.

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preprint2009arXiv

Dephasing of Si spin qubits due to charge noise

Spin qubits in Silicon quantum dots can have long coherence times, yet their manipulation relies on the exchange interaction, through which charge noise can induce decoherence. Charge traps near the interface of a Si heterostructure lead to fluctuations in the quantum-dot confinement and barrier potentials, which cause gating errors and two-spin dephasing. We quantify these effects in Si double quantum dots using a realistic model of noise. Specifically, we consider both random telegraph noise from a few traps (good for dots grown on submicron wafers) and 1/f noise from many traps (good for larger wafers appropriate for quantum dot arrays). We give estimates of gate errors for single-spin qubit architectures and dephasing in singlet-triplet qubits.

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preprint2009arXiv

External gates and transport in biased bilayer graphene

We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering potential. The response of bilayers to an electric field cannot be regarded as a sum of terms due to individual layers. Rather, interlayer tunneling and coherence between positive- and negative-energy states give the main contributions to the conductivity. At low energies, the dominant effect of scattering on transport comes from scattering within each energy band, yet a simple picture encapsulating the role of collisions in a set of scattering times is not applicable. Coherence between positive- and negative-energy states gives, as in monolayers, a term in the conductivity which depends on the order of limits. The application of an external gate, which introduces a gap between positive- and negative-energy states, does not affect transport. Nevertheless the solution to the kinetic equation in the presence of such a gate is very revealing for transport in both bilayers and monolayers.

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preprint2009arXiv

Realizing singlet-triplet qubits in multivalley Si quantum dots

There has been significant progress in the implementation and manipulation of singlet-triplet qubits in GaAs quantum dots. Given the considerably longer spin coherence times measured in Si, considerable interest has been generated recently in Si quantum dots. The physics of these systems is considerably more complex than the physics of GaAs quantum dots owing to the presence of the valley degree of freedom, which constitutes the focus of this work. In this paper we investigate the physics of Si quantum dots and focus on the feasibility of quantum coherent singlet-triplet qubit experiments analogous to those performed in GaAs. This additional degree of freedom greatly increases the complexity of the ground state and gives rise to highly nontrivial and interesting physics in the processes of qubit initialization, coherent manipulation and readout. We discuss the operational definition of a qubit in Si-based quantum dots. We find that in the presence of valley degeneracy a singlet-triplet qubit cannot be constructed, whereas for large valley splitting (>>k_B*T) the experiment is similar to GaAs. We show that experiments on singlet-triplet qubits analogous to those in GaAs would provide a method for estimating the valley coupling in Si. A Zeeman field distinguishes between different initialized states for any valley splitting and provides a tool to determine the size of this splitting.

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preprint2009arXiv

Side-jumps in the spin-Hall effect: construction of the Boltzmann collision integral

We present a systematic derivation of the side-jump contribution to the spin-Hall current in systems without band structure spin-orbit interactions, focusing on the construction of the collision integral for the Boltzmann equation. Starting from the quantum Liouville equation for the density operator we derive an equation describing the dynamics of the density matrix in the first Born approximation and to first order in the driving electric field. Elastic scattering requires conservation of the total energy, including the spin-orbit interaction energy with the electric field: this results in a first correction to the customary collision integral found in the Born approximation. A second correction is due to the change in the carrier position during collisions. It stems from the part of the density matrix off-diagonal in wave vector. The two corrections to the collision integral add up and are responsible for the total side-jump contribution to the spin-Hall current. The spin-orbit-induced correction to the velocity operator also contains terms diagonal and off-diagonal in momentum space, which together involve the total force acting on the system. This force is explicitly shown to vanish (on the average) in the steady state: thus the total contribution to the spin-Hall current due to the additional terms in the velocity operator is zero.

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preprint2009arXiv

Steady-state spin densities and currents

This article reviews steady-state spin densities and spin currents in materials with strong spin-orbit interactions. These phenomena are intimately related to spin precession due to spin-orbit coupling which has no equivalent in the steady state of charge distributions. The focus will be initially on effects originating from the band structure. In this case spin densities arise in an electric field because a component of each spin is conserved during precession. Spin currents arise because a component of each spin is continually precessing. These two phenomena are due to independent contributions to the steady-state density matrix, and scattering between the conserved and precessing spin distributions has important consequences for spin dynamics and spin-related effects in general. In the latter part of the article extrinsic effects such as skew scattering and side jump will be discussed, and it will be shown that these effects are also modified considerably by spin precession. Theoretical and experimental progress in all areas will be reviewed.

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