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Péter Boross

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cond-mat.mes-hall quant-ph cond-mat.supr-con

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preprint2021arXiv

Dephasing of Majorana qubits due to quasistatic disorder

Quantum bits based on Majorana zero modes are expected to be robust against certain noise types, and hence provide a quantum computing platform that is superior to conventional qubits. This robustness is not complete though: imperfections can still lead to qubit decoherence and hence to information loss. In this work, we theoretically study Majorana-qubit dephasing in a minimal model: in a Kitaev chain with quasistatic disorder. Our approach, based on numerics as well as first-order non-degenerate perturbation theory, provides a conceptually simple physical picture and predicts Gaussian dephasing. We show that, as system parameters are varied, the dephasing rate due to disorder oscillates out-of-phase with respect to the oscillating Majorana splitting of the clean system. In our model, first-order dephasing sweet spots are absent if disorder is uncorrelated. We describe the crossover between uncorrelated and highly correlated disorder, and show that dephasing measurements can be used to characterize the disorder correlation length. We expect that our results will be utilized for the design and interpretation of future Majorana-qubit experiments.

preprint2021arXiv

Triplet-blockaded Josephson supercurrent in double quantum dots

Serial double quantum dots created in semiconductor nanostructures provide a versatile platform for investigating two-electron spin quantum states, which can be tuned by electrostatic gating and an external magnetic field. In this work, we directly measure the supercurrent reversal between adjacent charge states of an InAs nanowire double quantum dot with superconducting leads, in good agreement with theoretical models. In the even charge parity sector, we observe a supercurrent blockade with increasing magnetic field, corresponding to the spin singlet to triplet transition. Our results demonstrate a direct spin to supercurrent conversion, the superconducting equivalent of the Pauli spin blockade. This effect can be exploited in hybrid quantum architectures coupling the quantum states of spin systems and superconducting circuits.

preprint2016arXiv

Control of valley dynamics in silicon quantum dots in the presence of an interface step

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic states of a silicon quantum dot can form a valley qubit. In this work, we show that a single-atom high step at the silicon/barrier interface induces a strong interaction of the qubit and in-plane electric fields, and analyze the consequences of this enhanced interaction on the dynamics of the qubit. The charge densities of the qubit states are deformed differently by the interface step, allowing non-demolition qubit readout via valley-to-charge conversion. A gate-induced in-plane electric field together with the interface step enables fast control of the valley qubit via electrically driven valley resonance. We calculate single- and two-qubit gate times, as well as relaxation and dephasing times, and present predictions for the parameter range where the gate times can be much shorter than the relaxation time and dephasing is reduced.

preprint2016arXiv

Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon

Gate control of donor electrons near interfaces is a generic ingredient of donor-based quantum computing. Here, we address the question: how is the phonon-assisted qubit relaxation time $T_1$ affected as the electron is shuttled between the donor and the interface? We focus on the example of the `flip-flop qubit' [Tosi et al., arXiv:1509.08538v1], defined as a combination of the nuclear and electronic states of a phosphorous donor in silicon, promising fast electrical control and long dephasing times when the electron is halfway between the donor and the interface. We theoretically describe orbital relaxation, flip-flop relaxation, and electron spin relaxation. We estimate that the flip-flop qubit relaxation time can be of the order of $100 \, μ\text{s}$, 8 orders of magnitude shorter than the value for an on-donor electron in bulk silicon, and a few orders of magnitude shorter (longer) than the predicted inhomogeneous dephasing time (gate times). All three relaxation processes are boosted by (i) the nontrivial valley structure of the electron-phonon interaction, and (ii) the different valley compositions of the involved electronic states.

preprint2015arXiv

Valley relaxation in graphene due to charged impurities

Monolayer graphene is an example of materials with multi-valley electronic structure. In such materials, the valley index is being considered as an information carrier. Consequently, relaxation mechanisms leading to loss of valley information are of interest. Here, we calculate the rate of valley relaxation induced by charged impurities in graphene. A special model of graphene is applied, where the $p_z$ orbitals are two-dimensional Gaussian functions, with a spatial extension characterised by an effective Bohr radius $a_\textrm{eB}$. We obtain the valley relaxation rate by solving the Boltzmann equation, for the case of noninteracting electrons, as well as for the case when the impurity potential is screened due to electron-electron interaction. For the latter case, we take into account local-field effects and evaluate the dielectric matrix in the random phase approximation. Our main findings: (i) The valley relaxation rate is proportional to the electronic density of states at the Fermi energy. (ii) Charged impurities located in the close vicinity of the graphene plane, at distance $d \lesssim 0.3\,\textrmÅ$, are much more efficient in inducing valley relaxation than those farther away, the effect of the latter being suppressed exponentially with increasing graphene-impurity distance $d$. (iii) Both in the absence and in the presence of electron-electron interaction, the valley relaxation rate shows pronounced dependence on the effective Bohr radius $a_\textrm{eB}$. The trends are different in the two cases: in the absence (presence) of screening, the valley relaxation rate decreases (increases) for increasing effective Bohr radius. This last result highlights that a quantitative calculation of the valley relaxation rate should incorporate electron-electron interactions as well as an accurate knowledge of the electronic wave functions on the atomic length scale.