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Andor Kormányos

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Published work

8 published item(s)

preprint2020arXiv

Quantum interference and nonequilibrium Josephson current in molecular Andreev interferometers

We study the quantum interference (QI) effects in three-terminal Andreev interferometers based on polyaromatic hydrocarbons (PAH's) under non-equilibrium conditions. The Andreev interferometer consists of a PAH coupled to two superconducting and one normal conducting terminals. We calculate the current measured in the normal lead as well as the current between the superconducting terminals under non-equilibrium conditions. We show that both the QI arising in the PAH cores and the bias voltage applied to a normal contact have a fundamental effect on the charge distribution associated with the Andreev Bound States (ABS's). QI can lead to a peculiar dependence of the normal current on the superconducting phase difference that was not observed in earlier studies of mesoscopic Andreev interferometers. We explain our results by an induced asymmetry in the spatial distribution of the electron- and hole-like quasiparticles. The non-equilibrium charge occupation induced in the central PAH core can result in a $π$ transition in the current-phase relation of the supercurrent for large enough applied bias voltage on the normal lead. The asymmetry in the spatial distribution of the electron- and hole-like quasiparticles might be used to split Cooper pairs and hence to produce entangled electrons in four terminal setups.

preprint2016arXiv

Boundary conditions for transition-metal dichalcogenide monolayers in the continuum model

We derive the boundary conditions for MoS$_2$ and similar transition-metal dichalcogenide honeycomb (2H polytype) monolayers with the same type of $\mathbf{k}\!\cdot\!\mathbf{p}$ Hamiltonian within the continuum model around the K points. In an effective 2-band description, the electron-hole symmetry breaking quadratic terms are also taken into account. We model the effect of the edges with a linear edge constraint method that has been applied previously to graphene. Focusing mainly on zigzag edges, we find that different reconstruction geometries with different edge-atoms can generally be described with one scalar parameter varying between 0 and $2π$. We analyze the edge states and their dispersion relation in MoS$_2$ in particular, and we find good agreement with the results of previous density functional theory calculations for various edge types.

preprint2016arXiv

Magnetic field oscillations of the critical current in long ballistic graphene Josephson junctions

We study the Josephson current in long ballistic superconductor-monolayer graphene-superconductor junctions. As a first step, we have developed an efficient computational approach to calculate the Josephson current in tight-binding systems. This approach can be particularly useful in the long junction limit, which has hitherto attracted less theoretical interest but has recently become experimentally relevant. We use this computational approach to study the dependence of the critical current on the junction geometry, doping level, and an applied perpendicular magnetic field. In zero magnetic field we find a good qualitative agreement with the recent experiment of Ben Shalom et al. (Reference[12]) for the length dependence of the critical current. For highly doped samples our numerical calculations show a broad agreement with the results of the quasiclassical formalism. In this case the critical current exhibits Fraunhofer-like oscillations as a function of the magnetic field. However, for lower doping levels, where the cyclotron orbit becomes comparable to the characteristic geometrical length scales of the system, deviations from the results of the quasiclassical formalism appear. We argue that due to the exceptional tunability and long mean free path of graphene systems a new regime can be explored where geometrical and dynamical effects are equally important to understand the magnetic field dependence of the critical current.

preprint2016arXiv

Transfer matrix approach for the Kerr and Faraday rotation in layered nanostructures

To study the optical rotation of the polarization of light incident on multilayer systems consisting of atomically thin conductors and dielectric multilayers we present a general method based on transfer matrices. The transfer matrix of the atomically thin conducting layer is obtained using the Maxwell equations. We derive expressions for the Kerr (Faraday) rotation angle and for the ellipticity of the reflected (transmitted) light as a function of the incident angle and polarization of the light. The method is demonstrated by calculating the Kerr (Faraday) angle for bilayer graphene in the quantum anomalous Hall state placed on the top of dielectric multilayers. The optical conductivity of the bilayer graphene is calculated in the framework of a four-band model.

preprint2015arXiv

k.p theory for two-dimensional transition metal dichalcogenide semiconductors

We present $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians parametrised by {\it ab initio} density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the $K$, $Q$, $Γ$, and $M$ points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential parts of the $\mathbf{k}\cdotp\mathbf{p}$ Hamiltonians for MoS$_2$, MoSe$_2$, WS$_2$, and WSe$_2$, including the spin-splitting and spin-polarisation of the bands, and we discuss the vibrational properties of these materials. We then use $\mathbf{k}\cdotp\mathbf{p}$ theory to analyse optical transitions in two-dimensional transition metal dichalcogenides over a broad spectral range that covers the Van Hove singularities in the band structure (the $M$ points). We also discuss the visualisation of scanning tunnelling microscopy maps.

preprint2014arXiv

Breaking of valley degeneracy by magnetic field in monolayer MoSe2

Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe$_2$ devices. We observe a linear splitting of $-0.22 \frac{\text{meV}}{\text{T}}$ between luminescence peak energies in $σ_{+}$ and $σ_{-}$ emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe$_2$ couple photon handedness to the exciton valley degree of freedom, so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with magnetic field, to a degree that depends on the back-gate voltage. An applied magnetic field therefore provides effective strategies for control over the valley degree of freedom.

preprint2014arXiv

Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides

We derive an effective Hamiltonian which describes the dynamics of electrons in the conduction band of transition metal dichalcogenides (TMDC) in the presence of perpendicular electric and magnetic fields. We discuss in detail both the intrinsic and the Bychkov-Rashba spin-orbit coupling (SOC) induced by an external electric field. We point out interesting differences in the spin-split conduction band between different TMDC compounds. An important consequence of the strong intrinsic SOC is an effective out-of-plane $g$-factor for the electrons which differs from the free-electron g-factor $g\simeq 2$. We identify a new term in the Hamiltonian of the Bychkov-Rashba SOC which does not exist in III-V semiconductors. Using first-principles calculations, we give estimates of the various parameters appearing in the theory. Finally, we consider quantum dots (QDs) formed in TMDC materials and derive an effective Hamiltonian which allows us to calculate the magnetic field dependence of the bound states in the QDs. We find that all states are both valley and spin split, which suggests that these QDs could be used as valley-spin filters. We explore the possibility of using spin and valley states in TMDCs as quantum bits, and conclude that, due to the relatively strong intrinsic spin-orbit splitting in the conduction band, the most realistic option appears to be a combined spin-valley (Kramers) qubit at low magnetic fields.

preprint2013arXiv

Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects

We use a combined ab-initio calculations and k.p theory based approach to derive a low-energy effective Hamiltonian for monolayer MoS2 at the K point of the Brillouin zone. It captures the features which are present in first-principles calculations but not explained by the theory of Xiao et al. [Phys Rev Lett 108, 196802 (2012)], namely the trigonal warping of the valence and conduction bands, the electron-hole symmetry breaking, and the spin-splitting of the conduction band. We also consider other points in the Brillouin zone which might be important for transport properties. Our findings lead to a more quantitative understanding of the properties of this material in the ballistic limit.