Researcher profile

H. Hilgenkamp

H. Hilgenkamp contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Balanced Detection in Femtosecond X-ray Absorption Spectroscopy to Reach the Ultimate Sensitivity Limit

X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth ($\frac{ΔE}{E} < 0.5\%$) pulses containing $\sim 10^{10}$ photons. However, the energy contained in each pulse fluctuates thus complicating pulse by pulse efforts to quantify the number of photons. Improvements in counting the photons in each pulse have defined the state of the art for XAS sensitivity. Here we demonstrate a final step in these improvements through a balanced detection method that approaches the photon counting shot noise limit. In doing so, we obtain high quality absorption spectra from the insulator-metal transition in VO$_2$ and unlock a method to explore dilute systems, subtle processes and nonlinear phenomena with ultrafast x-rays. The method is especially beneficial for x-ray light sources where integration and averaging are not viable options to improve sensitivity.

preprint2020arXiv

Gate-tuned Anomalous Hall Effect Driven by Rashba Splitting in Intermixed LaAlO3/GdTiO3/SrTiO3

The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition, while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic filds lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.