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Source author record

N. Homonnay

N. Homonnay appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.other

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Published work

5 published item(s)

preprint2015arXiv

All electrical coherent control of the magnetization in thin Yittrium Iron Garnet film

We demonstrate coherent control of time domain ferromagnetic resonance by all electrical excitation and detection. Using two ultrashort magnetic field steps with variable time delay we control the induction decay in yttrium iron garnet (YIG). By setting suitable delay times between the two steps the precession of the magnetization can either be enhanced or completely stopped. The method allows for a determination of the precession frequency within a few precession periods and with an accuracy much higher than can be achieved using fast fourier transformation. Moreover it holds the promise to massively increase precession amplitudes in pulsed inductive microwave magnetometry (PIMM) using low amplitude finite pulse trains. Our experiments are supported by micromagnetic simulations which nicely confirm the experimental results.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Quality Yttrium Iron Garnet Grown by Room Temperature Pulsed Laser Deposition and Subsequent Annealing

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic.\\ In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of $α$=(6.63$\pm$1.50)$\cdot$10$^{-5}$ is found and the linewidth at 9.6 GHz is as small as 1.30$\pm$0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of $α$=(7.51$\pm$1.40)$\cdot$10$^{-5}$ is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49$\pm$0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

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preprint2015arXiv

Inverse spin Hall effect in a complex ferromagnetic oxide heterostructure

Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed, there are already plenty of examples in spintronics, notably in the area of spin pumping and inverse spin Hall effect (ISHE) \cite{Azevedo2011, Czeschka2011, Hahn2013, Obstbaum2014}. Although complex oxides have been used in these experiments as a source of spin currents, they have never been demonstrated to act as a spin sink that exhibits ISHE. Here we show that in a heterostructure consisting of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) and SrRuO$_{3}$ (SRO) the low temperature ferromagnet SRO can act as a spin sink and exhibit a sizeable ISHE which persists even below its Curie temperature. This result opens up new possibilities for application of all oxide heterostructures in spintronics and may significantly extend the research on spin Hall effect and related phenomena.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanosized Vertical Organic Spin-Valves

A fabrication process for vertical organic spin-valve devices has been developed which offers the possibility to achieve active device areas of less than 500x500 nm^2 and is flexible in terms of material choice for the active layers. Characterization of the resulting devices shows a large magnetoresistance of sometimes more than 100%, however with equally large variation from device to device. Comparison with large-area spin-valves indicates that the magnetoresistance of both, large and small devices most likely originates from tunneling through pinholes and tunneling magnetoresistance.

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preprint2013arXiv

Vertical organic spin valves in perpendicular magnetic fields

We report the results of magnetoresistance measurements in vertical organic spin valves with the magnetic field oriented perpendicular to the layer stack. The magnetoresistance measurements were performed after carefully preparing either parallel or antiparallel in-plane magnetization states of the magnetic electrodes in order to observe traces of Hanle precession. Due to the low mobility in organic semiconductors the transit time of spin polarized carriers should allow for precession of the spins in perpendicular fields which in statistical average would quench the magnetoresistance. However, in none of the experiments we do observe any change in resistance while sweeping the perpendicular field, up to the point where the electrode's magnetization starts to reorient. This absence of Hanle type effects indicates that the magnetoresistance is not based on the injection of spin polarized electrons into the organic semiconductor but rather on tunneling through pinholes superimposed with tunneling anisotropic magnetoresistance.

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