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Researcher profile

G. J. Ferreira

G. J. Ferreira contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

3 published item(s)

preprint2020arXiv

Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas

Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time present strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along $\left[110\right]$, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along $\left[1\bar{1}0\right]$, the data shows spin lifetime that was gate-dependent and longer than in the $\left[110\right]$ direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.

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preprint2020arXiv

High-degeneracy points protected by site-permutation symmetries

Space group symmetries dictate the energy degeneracy of quasiparticles (e.g., electronic, photonic) in crystalline structures. For spinless systems, there can only be double or triple degeneracies protected by these symmetries, while other degeneracies are usually taken as \textit{accidental}. In this Letter we show that it is possible to design higher degeneracies exploring site permutation symmetries. These design principles are shown to be satisfied in previously studied lattices, and new structures are proposed with three, four and five degeneracy points for spinless systems. The results are general and apply to different quasiparticle models. Here, we focus on a tight-binding approach for the electronic case as a proof of principle. The resulting high-degeneracy points are protected by the site-permutation symmetries, yielding pseudospin-1 and -2 Dirac fermions. The strategy proposed here can be used to design lattices with high-degeneracy points in electronic (e.g. metal-organic frameworks), photonic, phononic, magnonic and cold-atom systems.

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preprint2019arXiv

Spin-orbit coupling in wurtzite quantum wells

Effective spin-orbit (SO) Hamiltonians for conduction electrons in wurtzite heterostructures are lacking in the literature, in contrast to zincblende structures. Here we address this issue by deriving such an effective Hamiltonian valid for quantum wells, wires, and dots with arbitrary confining potentials and external magnetic fields. We start from an 8$\times$8 Kane model accounting for the $s$--$p_z$ orbital mixing important to wurtzite structures, but absent in zincblende, and apply both quasi-degenerate perturbation theory (Löwdin partitioning) and the folding down approach to derive an effective 2$\times$2 electron Hamiltonian. We obtain the usual $k$-linear Rashba term arising from the structural inversion asymmetry of the wells and, differently from zincblende structures, a bulk Rashba-type term induced by the inversion asymmetry of the wurtzite lattice. We also find linear- and cubic-in-momentum Dresselhaus contributions. Both the bulk Rashba-type term and the Dresselhaus terms originate exclusively from the admixture of $s$- and $p_z$-like states in wurtzites structures. Interestingly, in these systems the linear Rashba and the Dresselhaus terms have the same symmetry and can in principle cancel each other out completely, thus making the spin a conserved quantity. We determine the intrasubband (intersubband) Rashba $α_ν$ ($η$) and linear Dresselhaus $β_ν$ ($Γ$) SO strengths of GaN/AlGaN single and double wells with one and two occupied subbands ($ν=1,2$). We believe our general effective Hamiltonian for electrons in wurtzite heterostructures put forward here, should stimulate additional theoretical works on wurtzite quantum wells, wires, and dots with variously defined geometries and external magnetic fields.

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