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Fabien Alibart

Fabien Alibart contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2021arXiv

Analog Programing of Conducting-Polymer Dendritic Interconnections and Control of their Morphology

Although materials and processes are different from biological cells', brain mimicries led to tremendous achievements in massively parallel information processing via neuromorphic engineering. Inexistent in electronics, we describe how to emulate dendritic morphogenesis by electropolymerization in water, aiming in operando material modification for hardware learning. The systematic study of applied voltage-pulse parameters details on tuning independently morphological aspects of micrometric dendrites': as fractal number, branching degree, asymmetry, density or length. Time-lapse image processing of their growth shows the spatial features to be dynamically-dependent and expand distinctively before and after forming a conductive bridging of two electrochemically grown dendrites. Circuit-element analysis and electrochemical impedance spectroscopy confirms their morphological control to occur in temporal windows where the growth kinetics can be finely perturbed by the input signal frequency and duty cycle. By the emulation of one of the most preponderant mechanisms responsible for brain's long-term memory, its implementation in the vicinity of sensing arrays, neural probes or biochips shall greatly optimize computational costs and recognition performances required to classify high-dimensional patterns from complex aqueous environments.

preprint2020arXiv

AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators

An adaptive inference method for crossbar (AIDX) is presented based on an optimization scheme for adjusting the duration and amplitude of input voltage pulses. AIDX minimizes the long-term effects of memristance drift on artificial neural network accuracy. The sub-threshold behavior of memristor has been modeled and verified by comparing with fabricated device data. The proposed method has been evaluated by testing on different network structures and applications, e.g., image reconstruction and classification tasks. The results showed an average of 60% improvement in convolutional neural network (CNN) performance on CIFAR10 dataset after 10000 inference operations as well as 78.6% error reduction in image reconstruction.

preprint2019arXiv

Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated to a maximum ION/IOFF ratio of 84 at 1.5 K, paving the way to selector-free cryogenic passive crossbars. Finally, temperature-dependant thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in low resistance state, suggesting hopping-type conduction mechanisms.

preprint2012arXiv

Ionically-mediated electromechanical hysteresis in transition metal oxides

Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Ginsburg Landau Devonshire (GLD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction, and ionically-induced ferroelectricity are identified. For the latter, the ionic contribution can change the sign of first order GLD expansion coefficient, rendering material effectively ferroelectric. These studies provide possible explanation for ferroelectric-like behavior in centrosymmetric transition metal oxides.