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Dmitri Strukov

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cond-mat.mtrl-sci Emerging Technologies cond-mat.other eess.SP Hardware Architecture Machine Learning

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preprint2020arXiv

Energy-Efficient Moderate Precision Time-Domain Mixed-signal Vector-by-Matrix Multiplier Exploiting 1T-1R Arrays

The emerging mobile devices in this era of internet-of-things (IoT) require a dedicated processor to enable computationally intensive applications such as neuromorphic computing and signal processing. Vector-by-matrix multiplication (VMM) is the most prominent operation in these applications. Therefore, there is a critical need for compact and ultralow-power VMM blocks to perform resource-intensive low-to-moderate precision computations. To this end, in this work, for the first time, we propose a time-domain mixed-signal VMM exploiting a modified configuration of 1MOSFET-1RRAM (1T-1R) array. The proposed VMM overcomes the energy inefficiency of the current-mode VMM approaches based on RRAMs. A rigorous analysis of the different non-ideal factors affecting the computational precision indicates that the non-negligible minimum cell currents, channel length modulation (CLM) and drain-induced barrier lowering (DIBL) are the dominant mechanisms degrading the precision of the proposed VMM. Our results also indicate that there exists a trade-off between the computational precision, dynamic range, and the area- and energy-efficiency of the proposed VMM approach. Therefore, we provide the necessary design guidelines for optimizing the performance. Our preliminary results show that an effective computational precision of 6-bits is achievable owing to an inherent compensation effect in the modified 1T-1R blocks. Furthermore, a 4-bit 200x200 VMM utilizing the proposed approach exhibits a significantly high energy efficiency of ~1.5 POps/J and a throughput of 2.5 TOps/s including the contribution from the input/output (I/O) circuitry.

preprint2020arXiv

Memristor Hardware-Friendly Reinforcement Learning

Recently, significant progress has been made in solving sophisticated problems among various domains by using reinforcement learning (RL), which allows machines or agents to learn from interactions with environments rather than explicit supervision. As the end of Moore's law seems to be imminent, emerging technologies that enable high performance neuromorphic hardware systems are attracting increasing attention. Namely, neuromorphic architectures that leverage memristors, the programmable and nonvolatile two-terminal devices, as synaptic weights in hardware neural networks, are candidates of choice to realize such highly energy-efficient and complex nervous systems. However, one of the challenges for memristive hardware with integrated learning capabilities is prohibitively large number of write cycles that might be required during learning process, and this situation is even exacerbated under RL situations. In this work we propose a memristive neuromorphic hardware implementation for the actor-critic algorithm in RL. By introducing a two-fold training procedure (i.e., ex-situ pre-training and in-situ re-training) and several training techniques, the number of weight updates can be significantly reduced and thus it will be suitable for efficient in-situ learning implementations. As a case study, we consider the task of balancing an inverted pendulum, a classical problem in both RL and control theory. We believe that this study shows the promise of using memristor-based hardware neural networks for handling complex tasks through in-situ reinforcement learning.

preprint2015arXiv

Endurance Write Speed Tradeoffs in Nonvolatile Memories

We derive phenomenological model for endurance-write time switching tradeoff for nonvolatile memories with thermally activated switching mechanisms. The model predicts linear to cubic dependence of endurance on write time for metal oxide memristors and flash memories, which is partially supported by experimental data for the breakdown of metal-oxide thin films.

preprint2012arXiv

Ionically-mediated electromechanical hysteresis in transition metal oxides

Electromechanical activity, remanent polarization states, and hysteresis loops in paraelectric TiO2 and SrTiO3 are observed. The coupling between the ionic dynamics and incipient ferroelectricity in these materials is analyzed using extended Ginsburg Landau Devonshire (GLD) theory. The possible origins of electromechanical coupling including ionic dynamics, surface-charge induced electrostriction, and ionically-induced ferroelectricity are identified. For the latter, the ionic contribution can change the sign of first order GLD expansion coefficient, rendering material effectively ferroelectric. These studies provide possible explanation for ferroelectric-like behavior in centrosymmetric transition metal oxides.

preprint2011arXiv

High-Precision Tuning of State for Memristive Devices by Adaptable Variation-Tolerant Algorithm

Using memristive properties common for the titanium dioxide thin film devices, we designed a simple write algorithm to tune device conductance at a specific bias point to 1% relative accuracy (which is roughly equivalent to 7-bit precision) within its dynamic range even in the presence of large variations in switching behavior. The high precision state is nonvolatile and the results are likely to be sustained for nanoscale memristive devices because of the inherent filamentary nature of the resistive switching. The proposed functionality of memristive devices is especially attractive for analog computing with low precision data. As one representative example we demonstrate hybrid circuitry consisting of CMOS summing amplifier and two memristive devices to perform analog multiply and accumulate computation, which is a typical bottleneck operation in information processing.