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Dominique Drouin

Dominique Drouin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Dynamic formation of spherical voids crossing linear defects

A predictive model for the evolution of porous Ge layer upon thermal treatment is reported. We represent an idealized etched dislocation core as an axially symmetric elongated hole and computed its dynamics during annealing. Numerical simulations of the shape change of a completely spherical void via surface diffusion have been performed. Simulations and experiments show individual large spherical voids, aligned along the dislocation core. The creation of voids could facilitate interactions between dislocations, enabling the dislocation network to change its connectivity in a way that facilitates the subsequent annihilation of dislocation segments. This confirms that thermally activated processes such as state diffusion of porous materials provide mechanisms whereby the defects are removed or arranged in configurations of lower energy. This model is intended to be indicative, and more detailed experimental characterization of process parameters such as annealing temperature and time, and could estimate the annealing time for given temperatures, or vice versa, with the right parameters.

preprint2020arXiv

AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators

An adaptive inference method for crossbar (AIDX) is presented based on an optimization scheme for adjusting the duration and amplitude of input voltage pulses. AIDX minimizes the long-term effects of memristance drift on artificial neural network accuracy. The sub-threshold behavior of memristor has been modeled and verified by comparing with fabricated device data. The proposed method has been evaluated by testing on different network structures and applications, e.g., image reconstruction and classification tasks. The results showed an average of 60% improvement in convolutional neural network (CNN) performance on CIFAR10 dataset after 10000 inference operations as well as 78.6% error reduction in image reconstruction.

preprint2019arXiv

Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)

In this work, we investigate the behavior of Al2O3/TiO2-x cross-point memristors in cryogenic environment. We report successful resistive switching of memristor devices from 300 K down to 1.5 K. The I-V curves exhibit negative differential resistance effects between 130 and 1.5 K, attributed to a metal-insulator transition (MIT) of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated to a maximum ION/IOFF ratio of 84 at 1.5 K, paving the way to selector-free cryogenic passive crossbars. Finally, temperature-dependant thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in low resistance state, suggesting hopping-type conduction mechanisms.