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Researcher profile

Dominique Vuillaume

Dominique Vuillaume contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherEmerging Technologiesphysics.app-ph

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Published work

8 published item(s)

preprint2022arXiv

Terphenylthiazole-based self-assembled monolayers on cobalt with high conductance photo-switching ratio for spintronics

Two new photo-switchable terphenylthiazoles molecules are synthesized and self-assembled as monolayers on Au and on ferromagnetic Co electrodes. The electron transport properties probed by conductive atomic force microscopy in ultra-high vacuum reveal a conductance of the light-induced closed (c) form larger than for the open (o) form. We report an unprecedented conductance ratio up to 380 between the closed and open forms on Co for the molecule with the anchoring group (thiol) on the side of the two N atoms of the thiazole unit. This result is rationalized by Density Functional Theory (DFT) calculations coupled to the Non-Equilibrium Green's function (NEGF) formalism. These calculations show that the high conductance in the closed form is due to a strong electronic coupling between the terphenylthiazole molecules and the Co electrode that manifests by a resonant transmission peak at the Fermi energy of the Co electrode with a large broadening. This behavior is not observed for the same molecules self-assembled on gold electrodes. These high conductance ratios make these Co-based molecular junctions attractive candidates to develop and study switchable molecular spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Thermal conductivity of benzothieno-benzothiophene derivatives at the nanoscale

We study by scanning thermal microscopy the nanoscale thermal conductance of films (40 to 400 nm thick) of [1]benzothieno[3,2-b][1]benzothiophene (BTBT) and 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8). We demonstrate that the out-of-plane thermal conductivity is significant along the interlayer direction, larger for BTBT (0.63 +/- 0.12 W m-1 K-1) compared to C8-BTBT-C8 (0.25 +/- 0.13 W m-1 K-1). These results are supported by molecular dynamics calculations (Approach to Equilibrium Molecular Dynamics method) performed on the corresponding molecular crystals. The calculations point to significant thermal conductivity (3D-like) values along the 3 crystalline directions, with anisotropy factors between the crystalline directions below 1.8 for BTBT and below 2.8 for C8-BTBT-C8, in deep contrast with the charge transport properties featuring a two-dimensional character for these materials. In agreement with the experiments, the calculations yield larger values in BTBT compared to C8-BTBT-C8 (0.6-1.3 W m-1 K-1 versus 0.3-0.7 W m-1 K-1, respectively). The weak thickness dependence of the nanoscale thermal resistance is in agreement with a simple analytical model.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Covalent Grafting of Polyoxometalate Hybrids onto Flat Silicon/Silicon Oxide: Insights from POMs Layers on Oxides

Immobilization of polyoxometalates (POMs) onto oxides is relevant to many applications in the fields of catalysis, energy conversion/storage or molecular electronics. Optimization and understanding the molecule/oxide interface is crucial to rationally improve the performance of the final molecular materials. We herein describe the synthesis and covalent grafting of POM hybrids with remote carboxylic acid functions onto flat Si/SiO2 substrates. Special attention has been paid to the characterization of the molecular layer and to the description of the POM anchoring mode at the oxide interface through the use of various characterization techniques, including ellipsometry, AFM, XPS and FTIR. Finally, electron transport properties were probed in a vertical junction configuration and energy level diagrams have been drawn and discussed in relation with the POM molecular electronic features inferred from cyclic-voltammetry, UV-visible absorption spectra and theoretical calculations. The electronic properties of these POM-based molecular junctions are driven by the POM LUMO (d-orbitals) whatever the nature of the tether or the anchoring group.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reservoir computing for sensing: an experimental approach

The increasing popularity of machine learning solutions puts increasing restrictions on this field if it is to penetrate more aspects of life. In particular, energy efficiency and speed of operation is crucial, inter alia in portable medical devices. The Reservoir Computing (RC) paradigm poses as a solution to these issues through foundation of its operation: the reservoir of states. Adequate separation of input information translated into the internal state of the reservoir, whose connections do not need to be trained, allow to simplify the readout layer thus significantly accelerating the operation of the system. In this brief review article, the theoretical basis of RC was first described, followed by a description of its individual variants, their development and state-of-the-art applications in chemical sensing and metrology: detection of impedance changes and ion sensing. Presented results indicate applicability of reservoir computing for sensing and validating the SWEET algorithm experimentally.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

An evaluation of the gate capacitance of a field-effect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraph-signal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FET.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f^y power spectrum noise with 1< y <1.2. We observe a slight bias dependent background of the normalized current noise power spectrum (SI/I^2). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with (\partial I/\partial V)^2 . A model is proposed showing qualitative agreements with our experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

High on-off conductance switching ratio in optically-driven self-assembled conjugated molecular systems

A new azobenzene-thiophene molecular switch is designed, synthesized and used to form self-assembled monolayers (SAM) on gold. An &#34;on/off&#34; conductance ratio up to 7x1E3 (with an average value of 1.5x1E3) is reported. The &#34;on&#34; conductance state is clearly identified to the cis isomer of the azobenzene moiety. The high &#34;on/off&#34; ratio is explained in terms of photo-induced, configuration-related, changes in the electrode-molecule interface energetics (changes in the energy position of the molecular orbitals with respect to the Fermi energy of electrodes) in addition to changes in the tunnel barrier length (length of the molecules). First principles DFT calculations demonstrate a better delocalization of the frontier orbitals, as well as a stronger electronic coupling between the azobenzene moiety and the electrode for the cis configuration over the trans one. Measured photoionization cross-sections for the molecules in the SAM are close to the known values for azobenzene derivatives in solution.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Relaxation dynamics in covalently bonded organic monolayers on silicon

We study the dynamic electrical response of a silicon-molecular monolayer-metal junctions and we observe two contributions in the admittance spectroscopy data. These contributions are related to dipolar relaxation and molecular organization in the monolayer in one hand, and the presence of defects at the silicon/molecule interface in the other hand. We propose a small signal equivalent circuit suitable for the simulations of these molecular devices in commercial device simulators. Our results concern monolayers of alkyl chains considered as a model system but can be extended to other molecular monolayers. These results open door to a better control and optimization of molecular devices.

0 citations0 reviewsNo code linkedOpen access