BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Enrico Prati

Enrico Prati appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
quant-phcond-mat.mes-hallcond-mat.mtrl-sciEmerging TechnologiesArtificial Intelligencecond-mat.quant-gascond-mat.stat-mechhep-phMachine LearningNeurons and Cognitionphysics.class-phphysics.optics

Catalog footprint

What is connected

17works
12topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

17 published item(s)

preprint2022arXiv

Quantum activation functions for quantum neural networks

The field of artificial neural networks is expected to strongly benefit from recent developments of quantum computers. In particular, quantum machine learning, a class of quantum algorithms which exploit qubits for creating trainable neural networks, will provide more power to solve problems such as pattern recognition, clustering and machine learning in general. The building block of feed-forward neural networks consists of one layer of neurons connected to an output neuron that is activated according to an arbitrary activation function. The corresponding learning algorithm goes under the name of Rosenblatt perceptron. Quantum perceptrons with specific activation functions are known, but a general method to realize arbitrary activation functions on a quantum computer is still lacking. Here we fill this gap with a quantum algorithm which is capable to approximate any analytic activation functions to any given order of its power series. Unlike previous proposals providing irreversible measurement--based and simplified activation functions, here we show how to approximate any analytic function to any required accuracy without the need to measure the states encoding the information. Thanks to the generality of this construction, any feed-forward neural network may acquire the universal approximation properties according to Hornik's theorem. Our results recast the science of artificial neural networks in the architecture of gate-model quantum computers.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Quantum integration of elementary particle processes

We apply quantum integration to elementary particle-physics processes. In particular, we look at scattering processes such as ${\rm e}^+{\rm e}^- \to q \bar q$ and ${\rm e}^+{\rm e}^- \to q \bar q' {\rm W}$. The corresponding probability distributions can be first appropriately loaded on a quantum computer using either quantum Generative Adversarial Networks or an exact method. The distributions are then integrated sing the method of Quantum Amplitude Estimation which shows a quadratic speed-up with respect to classical techniques. In simulations of noiseless quantum computers, we obtain per-cent accurate results for one- and two-dimensional integration with up to six qubits. This work paves the way towards taking advantage of quantum algorithms for the integration of high-energy processes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Multi-class quantum classifiers with tensor network circuits for quantum phase recognition

Hybrid quantum-classical algorithms based on variational circuits are a promising approach to quantum machine learning problems for near-term devices, but the selection of the variational ansatz is an open issue. Recently, tensor network-inspired circuits have been proposed as a natural choice for such ansatz. Their employment on binary classification tasks provided encouraging results. However, their effectiveness on more difficult tasks is still unknown. Here, we present numerical experiments on multi-class classifiers based on tree tensor network and multiscale entanglement renormalization ansatz circuits. We conducted experiments on image classification with the MNIST dataset and on quantum phase recognition with the XXZ model by Cirq and TensorFlow Quantum. In the former case, we reduced the number of classes to four to match the aimed output based on 2 qubits. The quantum data of the XXZ model consist of three classes of ground states prepared by a checkerboard circuit used for the ansatz of the variational quantum eigensolver, corresponding to three distinct quantum phases. Test accuracy turned out to be 59%-93% and 82%-96% respectively, depending on the model architecture and on the type of preprocessing.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optimized compiler for Distributed Quantum Computing

Practical distributed quantum computing requires the development of efficient compilers, able to make quantum circuits compatible with some given hardware constraints. This problem is known to be tough, even for local computing. Here, we address it on distributed architectures. As generally assumed in this scenario, telegates represent the fundamental remote (inter-processor) operations. Each telegate consists of several tasks: i) entanglement generation and distribution, ii) local operations, and iii) classical communications. Entanglement generations and distribution is an expensive resource, as it is time-consuming and fault-prone. To mitigate its impact, we model an optimization problem that combines running-time minimization with the usage of that resource. Specifically, we provide a parametric ILP formulation, where the parameter denotes a time horizon (or time availability); the objective function count the number of used resources. To minimize the time, a binary search solves the subject ILP by iterating over the parameter. Ultimately, to enhance the solution space, we extend the formulation, by introducing a predicate that manipulates the circuit given in input and parallelizes telegates' tasks.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Position-controlled functionalization of vacancies in silicon by single-ion implanted germanium atoms

Special point defects in semiconductors have been envisioned as suitable components for quantum-information technology. The identification of new deep centers in silicon that can be easily activated and controlled is a main target of the research in the field. Vacancy-related complexes are suitable to provide deep electronic levels but they are hard to control spatially. With the spirit of investigating solid state devices with intentional vacancy-related defects at controlled position, here we report on the functionalization of silicon vacancies by implanting Ge atoms through single-ion implantation, producing Ge-vacancy (GeV) complexes. We investigate the quantum transport through an array of GeV complexes in a silicon-based transistor. By exploiting a model based on an extended Hubbard Hamiltonian derived from ab-initio results we find anomalous activation energy values of the thermally activated conductance of both quasi-localized and delocalized many-body states, compared to conventional dopants. We identify such states, forming the upper Hubbard band, as responsible of the experimental sub-threshold transport across the transistor. The combination of our model with the single-ion implantation method enables future research for the engineering of GeV complexes towards the creation of spatially controllable individual defects in silicon for applications in quantum information technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Is all-electrical silicon quantum computing feasible in the long term?

The development of the first generation of commercial quantum computers is based on superconductive qubits and trapped ions respectively. Other technologies such as semiconductor quantum dots, neutral ions and photons could in principle provide an alternative to achieve comparable results in the medium term. It is relevant to evaluate if one or more of them is potentially more effective to address scalability to millions of qubits in the long term, in view of creating a universal quantum computer. We review an all-electrical silicon spin qubit, that is the double quantum dot hybrid qubit, a quantum technology which relies on both solid theoretical grounding on one side, and massive fabrication technology of nanometric scale devices by the existing silicon supply chain on the other.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Semantic Learning by Reverse Annealing an Adiabatic Quantum Computer

Boltzmann Machines constitute a class of neural networks with applications to image reconstruction, pattern classification and unsupervised learning in general. Their most common variants, called Restricted Boltzmann Machines (RBMs) exhibit a good trade-off between computability on existing silicon-based hardware and generality of possible applications. Still, the diffusion of RBMs is quite limited, since their training process proves to be hard. The advent of commercial Adiabatic Quantum Computers (AQCs) raised the expectation that the implementations of RBMs on such quantum devices could increase the training speed with respect to conventional hardware. To date, however, the implementation of RBM networks on AQCs has been limited by the low qubit connectivity when each qubit acts as a node of the neural network. Here we demonstrate the feasibility of a complete RBM on AQCs, thanks to an embedding that associates its nodes to virtual qubits, thus outperforming previous implementations based on incomplete graphs. Moreover, to accelerate the learning, we implement a semantic quantum search which, contrary to previous proposals, takes the input data as initial boundary conditions to start each learning step of the RBM, thanks to a reverse annealing schedule. Such an approach, unlike the more conventional forward annealing schedule, allows sampling configurations in a meaningful neighborhood of the training data, mimicking the behavior of the classical Gibbs sampling algorithm. We show that the learning based on reverse annealing quickly raises the sampling probability of a meaningful subset of the set of the configurations. Even without a proper optimization of the annealing schedule, the RBM semantically trained by reverse annealing achieves better scores on reconstruction tasks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Atomic scale nanoelectronics for quantum neuromorphic devices: comparing different materials

I review the advancements of atomic scale nanoelectronics towards quantum neuromorphics. First, I summarize the key properties of elementary combinations of few neurons, namely long-- and short--term plasticity, spike-timing dependent plasticity (associative plasticity), quantumness and stochastic effects, and their potential computational employment. Next, I review several atomic scale device technologies developed to control electron transport at the atomic level, including single atom implantation for atomic arrays and CMOS quantum dots, single atom memories, Ag$_2$S and Cu$_2$S atomic switches, hafnium based RRAMs, organic material based transistors, Ge$_2$Sb$_2$Te$_5$ synapses. Each material/method proved successful in achieving some of the properties observed in real neurons. I compare the different methods towards the creation of a new generation of naturally inspired and biophysically meaningful artificial neurons, in order to replace the rigid CMOS based neuromorphic hardware. The most challenging aspect to address appears to obtain both the stochastic/quantum behavior and the associative plasticity, which are currently observed only below and above 20 nm length scale respectively, by employing the same material.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 $\times$ 20 nm$^{2}$ is obtained by employing electron beam lithography for active and gate levels patterning. The Coulomb blockade stability diagram is precisely resolved at 4.2 K and it exhibits large addition energies of tens of meV. The confinement of the electrons in the quantum dot has been modeled by using a Current Spin Density Functional Theory (CS-DFT) method. CMOS technology enables massive production of SETs for ultimate nanoelectronics and quantum variables based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Valley blockade quantum switching in Silicon nanostructures

In analogy to the Coulomb and the Pauli spin blockade, based on the electrostatic repulsion and the Pauli exclusion principle respectively, the concept of valley blockade in Silicon nanostructures is explored. The valley parity operator is defined. Valley blockade is determined by the parity conservation of valley composition eigenvectors in quantum transport. A Silicon quantum changeover switch based on a triple of donor quantum dots capable to separate electrons having opposite valley parity by virtue of the valley parity conservation is proposed. The quantum changeover switch represents a novel kind of hybrid quantum based classical logic device.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Adiabatic Charge Control in a Single Donor Atom Transistor

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect transistor. The different coupling capacitances of the donor and the quantum dot with the control and the back gates are exploited to generate a relative rigid shift of their energy spectrum as a function of the back gate voltage, causing the crossing of the energy levels. We observe the sequential tunneling through the $D^{2-}$ and the $D^{3-}$ energy levels of the donor hybridized at the oxide interface at 4.2 K. Their respective states form an honeycomb pattern with the quantum dot states. It is therefore possible to control the exchange coupling of an electron of the quantum dot with the electrons bound to the donor, thus realizing a physical qubit for quantum information processing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Density Effects on the Negative Refractive Index of a Split Ring Resonator Metamaterial

Perfect lensing and cloaking based on complementary media are possible applications of negative refractive index materials. Metamaterials represent the natural candidates to realize such property by tailoring the effective dielectric permittiviy and magnetic permeability. The fine tuning of $n<0$ of metamaterials is limited by coarse grained inclusions which give discreteness to the electromagnetic parameters as a function of their density. We study the negative refractive index of a metamaterial as a function of the linear density of the lattice period at microwave frequency. The negative refractive index is obtained by a waveguide filled with a split ring resonator array in a frequency band below the cut off frequency of the waveguide. The special value of $n=-1$ typical of perfect lensing is maintained by tuning the density on a bandwidth of 1 GHz. A cut-off density above which the metamaterial operates is observed. A second critical density above which the transmission saturates is found close to the Pendry limit. Such results on the density of negative refractive index metamaterials open new paths towards the fine tuning of constitutive parameters at wanted values by means of transformation optics.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device

I present a theoretical model of a quantum statistical ensemble for which, unlike in conventional physics, the total number of particles is extremely small. The thermodynamical quantities are calculated by taking a small $N$ by virtue of the orthodicity of canonical ensemble. The finite quantum grand partition function of a Fermi-Dirac system is calculated. The model is applied to a quantum dot coupled with a small two dimensional electron system. Such system consists of an alternatively single and double occupied electron system confined in a quantum dot, which exhanges one electron with a small $N$ two dimensional electron reservoir. The analytic determination of the temperature of a $(1\leftrightarrow 2)$ electron system and the role of ergodicity are discussed. The generalized temperature expression in the small $N$ regime recovers the usual temperature expression by taking the limit of $N\to\infty$ of the electron bath.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble model applies, the time domain charge fluctuation in the defect is used to determine the temperature of the few electron gas in the channel.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Microwave Assisted Transport in a Single Donor Silicon Quantum Dot

Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunneling and microwave induced electron pumping regimes are revealed respectively at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first excited energy level of the $D_0$ energy of the donor. Such microwave assisted transport at zero bias enhances the resolution in the spectroscopy of the energy levels of the donor.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

The Nature of Time: from a Timeless Hamiltonian Framework to Clock Time of Metrology

The problem of the Nature of Time is twofold: whether or not time is a fundamental quantity of Nature, and how does clock time of metrology emerge in the experimental description of dynamics. This work strongly supports the fundamental timelessness of Nature. However, the correct view that physics is described by relations between variables does not address the second problem of how time does emerge at the macroscopic scale on the ground of a timeless framework. In this work ordinary Hamiltonian dynamics is recast in a timeless formalism capable to provide a definition of parameter time on the basis of the only generalized coordinates, together with the Hamiltonian invariance on trajectories, and a variational principle. Next, by relaxing the assumption of periodicity of real clocks to the only cyclicity in the phase space, the second problem is addressed. Physical systems, if complex enough, can be separated in a subsystem whose dynamics is described, and another cyclic subsystem which behaves as a clock. The dynamics of the first is mapped in the states of the second cyclic subsystem which provides a discrete approximation of the parameter time. Useful clocks fulfill a stability prescription which guarantees that dynamics is expressed by simple laws also in terms of metric time as naturally happens for parameter time. The two ideas provide a unitary framework capable to account the fundamental timelessness of Nature, and the experimental evidence of time evolution in macroscopic systems experienced by the observers.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.

0 citations0 reviewsNo code linkedOpen access