Researcher profile

Marco Fanciulli

Marco Fanciulli contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Superconducting microresonators for electron spin resonance, the good, the bad, and the future

The field of electron spin resonance is in constant need to improve its capabilities. Among other things, this means having better resonators which would provide improved spin sensitivity, as well as enable larger microwave magnetic field power conversion factors. Surface micro resonators, made of small metallic patches on a dielectric substrate, provide very good absolute spin sensitivity and high conversion factors due to their very small mode volume. However, such resonators suffer from having a relatively low quality factor, which offsets some of their significant potential advantages. The use of superconducting patches to replace the metallic layer seems like a reasonable and straightforward solution to the quality factor issue, at least for measurements carried out at cryogenic temperatures. Nevertheless, superconducting materials are not easily incorporated into setups requiring high magnetic fields, due to electric current vortices generated in the latter's surface. This makes the transition from normal conducing materials to superconductors highly nontrivial. Here we present the design, fabrication, and testing results of surface micro resonators made of yttrium barium copper oxide (YBCO) superconducting material. We show that with a unique experimental setup, these resonators can be made to operate well even at high fields of about 1.2 T. Furthermore, we analyze the effect of current vortices on the ESR signal and the spins' coherence times. Finally, we provide a head to head comparison of YBCO vs copper resonators of the same dimensions, which clearly shows their pros and cons and directs us to future potential developments and improvements in this field.

preprint2009arXiv

Microwave Assisted Transport in a Single Donor Silicon Quantum Dot

Single donors in semiconductor nanostructures represent a key element to develop spin related quantum functionalities in atomic scale devices. Quantum transport through a single Arsenic donor in the channel of a Silicon nano-field effect transistor under microwave irradiation is investigated. The device is characterized at mK temperatures in the regime of Coulomb-blockade. Photon assisted tunneling and microwave induced electron pumping regimes are revealed respectively at low and high microwave power. At sufficiently high power, the microwave irradiation induces tunneling through the first excited energy level of the $D_0$ energy of the donor. Such microwave assisted transport at zero bias enhances the resolution in the spectroscopy of the energy levels of the donor.

preprint2007arXiv

Time Dependent Inelastic Emission and Capture of Localized Electrons in Si n-MOSFETs Under Microwave Irradiation

Microwave irradiation causes voltage fluctuations in solid state nanodevices. Such an effect is relevant in atomic electronics and nanostructures for quantum information processing, where charge or spin states are controlled by microwave fields and electrically detected. Here the variation of the characteristic times of the multiphonon capture and emission of a single electron by an interface defect in submicron MOSFETs is calculated and measured as a function of the microwave power, whose frequency of the voltage modulation is assumed to be large if compared to the inverse of the characteristic times. The variation of the characteristic times under microwave irradiation is quantitatively predicted from the microwave frequency dependent stationary current generated by the voltage fluctuations itself. The expected values agree with the experimental measurements. The coupling between the microwave field and either one or two terminals of the device is discussed. Some consequences on nanoscale device technology are drawn.