BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Dillon Wong

Dillon Wong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conphysics.ins-detquant-ph

Catalog footprint

What is connected

8works
6topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

8 published item(s)

preprint2022arXiv

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A modular ultra-high vacuum millikelvin scanning tunneling microscope

We describe the design, construction, and performance of an ultra-high vacuum (UHV) scanning tunneling microscope (STM) capable of imaging at dilution-refrigerator temperatures and equipped with a vector magnet. The primary objective of our design is to achieve a high level of modularity by partitioning the STM system into a set of easily separable, interchangeable components. This naturally segregates the UHV needs of STM instrumentation from the typically non-UHV construction of a dilution refrigerator, facilitating the usage of non-UHV materials while maintaining a fully bakeable UHV chamber that houses the STM. The modular design also permits speedy removal of the microscope head from the rest of the system, allowing for repairs, modifications, and even replacement of the entire microscope head to be made at any time without warming the cryostat or compromising the vacuum. Without using cryogenic filters, we measured an electron temperature of 184 mK on a superconducting Al(100) single crystal.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Cascade of electronic transitions in magic-angle twisted bilayer graphene

Magic-angle twisted bilayer graphene (MATBG) exhibits a rich variety of electronic states, including correlated insulators, superconductors, and topological phases. Understanding the microscopic mechanisms responsible for these phases requires determining the interplay between electron-electron interactions and quantum degeneracy due to spin and valley degrees of freedom. Signatures of strong electron-electron correlations have been observed at partial fillings of the flat electronic bands in recent spectroscopic measurements. Transport experiments have shown changes in the Landau level degeneracy at fillings corresponding to an integer number of electrons per moiré unit cell. However, the interplay between interaction effects and the degeneracy of the system is currently unclear. Using high-resolution scanning tunneling microscopy (STM), we observed a cascade of transitions in the spectroscopic properties of MATBG as a function of electron filling. We find distinct changes in the chemical potential and a rearrangement of the low-energy excitations at each integer filling of the moiré flat bands. These spectroscopic features are a direct consequence of Coulomb interactions, which split the degenerate flat bands into Hubbard sub-bands. We find these interactions, the strength of which we can extract experimentally, to be surprisingly sensitive to the presence of a perpendicular magnetic field, which strongly modifies the spectroscopic transitions. The cascade of transitions we report here characterizes the correlated high-temperature parent phase from which various insulating and superconducting ground-state phases emerge at low temperatures in MATBG.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Imaging electrostatically confined Dirac fermions in graphene quantum dots

Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and transmission at these novel potential barriers should affect the quantum interference of electronic wavefunctions near these boundaries. Here we report the use of scanning tunneling microscopy (STM) to map the electronic structure of Dirac fermions confined by circular graphene pn junctions. These effective quantum dots were fabricated using a new technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe energy levels corresponding to quasi-bound states and we spatially visualize the quantum interference patterns of confined electrons. Dirac fermions outside these quantum dots exhibit Friedel oscillation-like behavior. Bolstered with a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield new insight into the spatial behavior of electrostatically confined Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride (BN) heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path towards on-demand graphene pn junctions and ultra-thin memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene

Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a history of imaging the electronic structure of individual point defects in conductors, semiconductors, and ultrathin films, but single-defect electronic characterization at the nanometer-scale remains an elusive goal for intrinsic bulk insulators. Here we report the characterization and manipulation of individual native defects in an intrinsic bulk hexagonal boron nitride (BN) insulator via STM. Normally, this would be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by employing a graphene/BN heterostructure, which exploits graphene's atomically thin nature to allow visualization of defect phenomena in the underlying bulk BN. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunneling spectroscopy (STS), we obtain charge and energy-level information for these BN defect structures. In addition to characterizing such defects, we find that it is also possible to manipulate them through voltage pulses applied to our STM tip.

0 citations0 reviewsNo code linkedOpen access