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Alex Zettl

Alex Zettl appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.opticsquant-ph

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Published work

35 published item(s)

preprint2022arXiv

Deep Learning Coherent Diffractive Imaging

We report the development of deep learning coherent electron diffractive imaging at sub-angstrom resolution using convolutional neural networks (CNNs) trained with only simulated data. We experimentally demonstrate this method by applying the trained CNNs to directly recover the phase images from electron diffraction patterns of twisted hexagonal boron nitride, monolayer graphene and a Au nanoparticle with comparable quality to those reconstructed by a conventional ptychographic method. Fourier ring correlation between the CNN and ptychographic images indicates the achievement of a spatial resolution in the range of 0.70 and 0.55 angstrom (depending on different resolution criteria). The ability to replace iterative algorithms with CNNs and perform real-time imaging from coherent diffraction patterns is expected to find broad applications in the physical and biological sciences.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Correlated interlayer exciton insulator in double layers of monolayer WSe2 and moiré WS2/WSe2

Moiré superlattices in van der Waals heterostructures have emerged as a powerful tool for engineering novel quantum phenomena. Here we report the observation of a correlated interlayer exciton insulator in a double-layer heterostructure composed of a WSe2 monolayer and a WS2/WSe2 moiré bilayer that are separated by an ultrathin hexagonal boron nitride (hBN). The moiré WS2/WSe2 bilayer features a Mott insulator state at hole density p/p0 = 1, where p0 corresponds to one hole per moiré lattice site. When electrons are added to the Mott insulator in the WS2/WSe2 moiré bilayer and an equal number of holes are injected into the WSe2 monolayer, a new interlayer exciton insulator emerges with the holes in the WSe2 monolayer and the electrons in the doped Mott insulator bound together through interlayer Coulomb interactions. The excitonic insulator is stable up to a critical hole density of ~ 0.5p0 in the WSe2 monolayer, beyond which the system becomes metallic. Our study highlights the opportunities for realizing novel quantum phases in double-layer moiré systems due to the interplay between the moiré flat band and strong interlayer electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries

One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Autocorrected Off-axis Holography of 2D Materials

The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Characterizing Transition-Metal Dichalcogenide Thin-Films using Hyperspectral Imaging and Machine Learning

Atomically thin polycrystalline transition-metal dichalcogenides (TMDs) are relevant to both fundamental science investigation and applications. TMD thin-films present uniquely difficult challenges to effective nanoscale crystalline characterization. Here we present a method to quickly characterize the nanocrystalline grain structure and texture of monolayer WS2 films using scanning nanobeam electron diffraction coupled with multivariate statistical analysis of the resulting data. Our analysis pipeline is highly generalizable and is a useful alternative to the time consuming, complex, and system-dependent methodology traditionally used to analyze spatially resolved electron diffraction measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride

Controlling the size and shape of nanopores in two-dimensional materials is a key challenge in applications such as DNA sequencing, sieving, and quantum emission in artificial atoms. We here investigate experimentally and theoretically triangular vacancies in (unconventional) Bernal-stacked AB-h-BN formed using a high-energy electron beam. Due to the geometric configuration of AB-h-BN, triangular pores in different layers are aligned, and their sizes are controlled by the duration of the electron irradiation. Interlayer covalent bonding at the vacancy edge is not favored, as opposed to what occurs in the more common AA'-stacked BN. A variety of monolayer, concentric and bilayer pores in bilayer AB-h-BN are observed in high-resolution transmission electron microscopy and characterized using ab initio simulations. Bilayer pores in AB-h-BN are commonly formed, and grow without breaking the bilayer character. Nanopores in AB-h-BN exhibit a wide range of electronic properties, ranging from half-metallic to non-magnetic and magnetic semiconducting. Therefore, because of the controllability of the pore size, the electronic structure is also highly controllable in these systems, and can potentially be tuned for particular applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergence of Topologically Non-trivial Spin-polarized States in a Segmented Linear Chain

The synthesis of new materials with novel or useful properties is one of the most important drivers in the fields of condensed matter physics and materials science. Discoveries of this kind are especially significant when they point to promising future basic research and applications. Van der Waals bonded materials comprised of lower-dimensional building blocks have been shown to exhibit emergent properties when isolated in an atomically thin form1-8. Here, we report the discovery of a transition metal chalcogenide in a heretofore unknown segmented linear chain form, where basic building blocks each consisting of two hafnium atoms and nine tellurium atoms (Hf2Te9) are van der Waals bonded end-to-end. First-principle calculations based on density functional theory reveal striking crystal-symmetry-related features in the electronic structure of the segmented chain, including giant spin splitting and nontrivial topological phases of selected energy band states. Atomic-resolution scanning transmission electron microscopy reveals single segmented Hf2Te9 chains isolated within the hollow cores of carbon nanotubes, with a structure consistent with theoretical predictions. Van der Waals-bonded segmented linear chain transition metal chalcogenide materials could open up new opportunities in low-dimensional, gate-tunable, magnetic and topological crystalline systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-Performance Atomically-Thin Room-Temperature NO2 Sensor

The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and reversible chemical sensor based on a monolayer of the transition metal dichalcogenide Re0.5Nb0.5S2. The sensing device exhibits thickness dependent carrier type, and upon exposure to NO2 molecules, its electrical resistance considerably increases or decreases depending on the layer number. The sensor is selective to NO2 with only minimal response to other gases such as NH3, CH2O, and CO2. In the presence of humidity, not only are the sensing properties not deteriorated, but also the monolayer sensor shows complete reversibility with fast recovery at room temperature. We present a theoretical analysis of the sensing platform and identify the atomically-sensitive transduction mechanism.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Layer-Dependent Topological Phase in a Two-Dimensional Quasicrystal and Approximant

Electronic and topological properties of materials are derived from the interplay between crystalline symmetry and dimensionality. Simultaneously introducing 'forbidden' symmetries via quasiperiodic ordering with low-dimensionality into a material system promises the emergence of new physical phenomena. Here, we isolate a two-dimensional chalcogenide quasicrystal and approximant, and investigate associated electronic and topological properties. Ultra-thin two-dimensional layers of the materials with a composition close to Ta1.6Te, derived from a layered transition metal dichalcogenide, are isolated with standard exfoliation techniques and investigated with electron diffraction and atomic-resolution scanning transmission electron microscopy. Density functional theory calculations and symmetry analysis of the large unit-cell crystalline approximant of the quasicrystal Ta21Te13 reveal the presence of symmetry protected nodal crossings in the quasicrystalline and approximate phases whose presence is tunable by layer number. Our study provides a platform for the exploration of physics in quasicrystalline low-dimensional materials and the interconnected nature of topology, dimensionality and symmetry in electronic systems.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices. Transition metal dichalcogenide (TMDC) moiré heterostructures provide another exciting model system to explore correlated quantum phenomena, with the addition of strong light-matter interactions and large spin-orbital coupling. Here we report the optical detection of strongly correlated phases in semiconducting WSe2/WS2 moiré superlattices. Our sensitive optical detection technique reveals a Mott insulator state at one hole per superlattice site (ν = 1), and surprising insulating phases at fractional filling factors ν = 1/3 and 2/3, which we assign to generalized Wigner crystallization on an underlying lattice. Furthermore, the unique spin-valley optical selection rules of TMDC heterostructures allow us to optically create and investigate low-energy spin excited states in the Mott insulator. We reveal an especially slow spin relaxation lifetime of many microseconds in the Mott insulating state, orders-of-magnitude longer than that of charge excitations. Our studies highlight novel correlated physics that can emerge in moiré superlattices beyond graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Orbital character effects in the photon energy and polarization dependence of pure C60 photoemission

Recent direct experimental observation of multiple highly-dispersive C$_{60}$ valence bands has allowed for a detailed analysis of the unique photoemission traits of these features through photon energy- and polarization-dependent measurements. Previously obscured dispersions and strong photoemission traits are now revealed by specific light polarizations. The observed intensity effects prove the locking in place of the C$_{60}$ molecules at low temperatures and the existence of an orientational order imposed by the substrate chosen. Most importantly, photon energy- and polarization-dependent effects are shown to be intimately linked with the orbital character of the C$_{60}$ band manifolds which allows for a more precise determination of the orbital character within the HOMO-2. Our observations and analysis provide important considerations for the connection between molecular and crystalline C$_{60}$ electronic structure, past and future band structure studies, and for increasingly popular C$_{60}$ electronic device applications, especially those making use of heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Resolving spin, valley, and moiré quasi-angular momentum of interlayer excitons in WSe2/WS2 heterostructures

Moiré superlattices provide a powerful way to engineer properties of electrons and excitons in two-dimensional van der Waals heterostructures. The moiré effect can be especially strong for interlayer excitons, where electrons and holes reside in different layers and can be addressed separately. In particular, it was recently proposed that the moiré superlattice potential not only localizes interlayer exciton states at different superlattice positions, but also hosts an emerging moiré quasi-angular momentum (QAM) that periodically switches the optical selection rules for interlayer excitons at different moiré sites. Here we report the observation of multiple interlayer exciton states coexisting in a WSe2/WS2 moiré superlattice and unambiguously determine their spin, valley, and moiré QAM through novel resonant optical pump-probe spectroscopy and photoluminescence excitation spectroscopy. We demonstrate that interlayer excitons localized at different moiré sites can exhibit opposite optical selection rules due to the spatially-varying moiré QAM. Our observation reveals new opportunities to engineer interlayer exciton states and valley physics with moiré superlattices for optoelectronic and valleytronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist

Bilayer graphene was theorized to host a moire miniband with flat dispersion if the layers are stacked at specific twist angles known as the magic angles. Recently, such twisted bilayer graphene (tBLG) with the first magic angle twist was reported to exhibit correlated insulating state and superconductivity, where the presence of the flat miniband in the system is thought to be essential for the emergence of these ordered phases in the transport measurements. Tunneling spectroscopy and electronic compressibility measurements in tBLG have revealed a van Hove singularity that is consistent with the presence of the flat miniband. However, a direct observation of the flat dispersion in the momentum-space of such moire miniband in tBLG is still elusive. Here, we report the visualization of the flat moire miniband by using angle-resolved photoemission spectroscopy with nanoscale resolution (nanoARPES). The high spatial resolution in nanoARPES enabled the measurement of the local electronic structure of the tBLG. We clearly demonstrate the existence of the flat moire band near the charge neutrality for tBLG close to the magic angle at room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

High current, high efficiency graded band gap perovskite solar cells

Organic-inorganic halide perovskite materials have emerged as attractive alternatives to conventional solar cell building blocks. Their high light absorption coefficients and long diffusion lengths suggest high power conversion efficiencies (PCE),1-5 and indeed perovskite-based single band gap and tandem solar cell designs have yielded impressive performances.1-16 One approach to further enhance solar spectrum utilization is the graded band gap, but this has not been previously achieved for perovskites. In this study, we demonstrate graded band gap perovskite solar cells with steady-state conversion efficiencies averaging 18.4%, with a best of 21.7%, all without reflective coatings. An analysis of the experimental data yields high fill factors of ~75% and high short circuit current densities up to 42.1 mA/cm2. These cells, which are based on a novel architecture of two perovskite layers (MASnI3 and MAPbI3-xBrx), incorporating GaN, monolayer hexagonal boron nitride, and graphene aerogel, display the highest efficiency ever reported for perovskite solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Imaging electrostatically confined Dirac fermions in graphene quantum dots

Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and transmission at these novel potential barriers should affect the quantum interference of electronic wavefunctions near these boundaries. Here we report the use of scanning tunneling microscopy (STM) to map the electronic structure of Dirac fermions confined by circular graphene pn junctions. These effective quantum dots were fabricated using a new technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe energy levels corresponding to quasi-bound states and we spatially visualize the quantum interference patterns of confined electrons. Dirac fermions outside these quantum dots exhibit Friedel oscillation-like behavior. Bolstered with a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield new insight into the spatial behavior of electrostatically confined Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride (BN) heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path towards on-demand graphene pn junctions and ultra-thin memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Why do Collapsed Carbon Nanotubes Twist?

We study the collapsing and subsequent spontaneous twisting of a carbon nanotube by in-situ transmission electron microscopy. A custom-sized nanotube is first created in the microscope by selectively extracting shells from a parent multi-wall tube. The few-wall, large-diameter daughter nanotube is driven to collapse via mechanical stimulation, after which the ribbon-like collapsed tube spontaneously twists along its long axis. In-situ diffraction experiments fully characterize the uncollapsed and collapsed tubes. From the experimental observations and associated theoretical analysis, the origin of the twisting is determined to be compressive strain due to charge imbalance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterization of collective ground states in single-layer NbSe2

Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Δ = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles

Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related materials such as graphene) is hexagonal boron nitride (h-BN). Stacked heterostructures of MoS2 and h-BN have been produced by manual transfer methods, but a more efficient and scalable assembly method is needed. Here we demonstrate the direct growth of single- and few-layer MoS2 on h-BN by chemical vapor deposition (CVD) method, which is scalable with suitably structured substrates. The growth mechanisms for single-layer and few-layer samples are found to be distinct, and for single-layer samples low relative rotation angles (<5 degree) between the MoS2 and h-BN lattices prevail. Moreover, MoS2 directly grown on h-BN maintains its intrinsic 1.89 eV bandgap. Our CVD synthesis method presents an important advancement towards controllable and scalable MoS2 based electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Large-Scale Experimental and Theoretical Study of Graphene Grain Boundary Structures

We have characterized the structure of 176 different single-layer graphene grain boundaries using $>$1000 experimental HRTEM images using a semi-automated structure processing routine. We introduce a new algorithm for generating grain boundary structures for a class of hexagonal 2D materials and use this algorithm and molecular dynamics to simulate the structure of $>$79000 graphene grain boundaries covering 4122 unique orientations distributed over the entire parameter space. The dislocation content and structural properties are extracted from all experimental and simulated boundaries, and various trends are explored. We find excellent agreement between the simulated and experimentally observed grain boundaries. Our analysis demonstrates the power of a statistically significant number of measurements as opposed to a small number of observations in atomic science. All experimental and simulated boundary structures are available online.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene

Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a history of imaging the electronic structure of individual point defects in conductors, semiconductors, and ultrathin films, but single-defect electronic characterization at the nanometer-scale remains an elusive goal for intrinsic bulk insulators. Here we report the characterization and manipulation of individual native defects in an intrinsic bulk hexagonal boron nitride (BN) insulator via STM. Normally, this would be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by employing a graphene/BN heterostructure, which exploits graphene's atomically thin nature to allow visualization of defect phenomena in the underlying bulk BN. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunneling spectroscopy (STS), we obtain charge and energy-level information for these BN defect structures. In addition to characterizing such defects, we find that it is also possible to manipulate them through voltage pulses applied to our STM tip.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Evolution of Interlayer Coupling in Twisted MoS2 Bilayers

Van der Waals (vdW) coupling is emerging as a powerful method to engineer and tailor physical properties of atomically thin two-dimensional (2D) materials. In graphene/graphene and graphene/boron-nitride structures it leads to interesting physical phenomena ranging from new van Hove singularities1-4 and Fermi velocity renormalization5, 6 to unconventional quantum Hall effects7 and Hofstadter's butterfly pattern8-12. 2D transition metal dichalcogenides (TMDCs), another system of predominantly vdW-coupled atomically thin layers13, 14, can also exhibit interesting but different coupling phenomena because TMDCs can be direct or indirect bandgap semiconductors15, 16. Here, we present the first study on the evolution of interlayer coupling with twist angles in as-grown MoS2 bilayers. We find that an indirect bandgap emerges in bilayers with any stacking configuration, but the bandgap size varies appreciably with the twist angle: it shows the largest redshift for AA- and AB-stacked bilayers, and a significantly smaller but constant redshift for all other twist angles. The vibration frequency of the out-of-plane phonon in MoS2 shows similar twist angle dependence. Our observations, together with ab initio calculations, reveal that this evolution of interlayer coupling originates from the repulsive steric effects, which leads to different interlayer separations between the two MoS2 layers in different stacking configurations.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Experimentally Engineering the Edge Termination of Graphene Nanoribbons

The edges of graphene nanoribbons (GNRs) have attracted much interest due to their potentially strong influence on GNR electronic and magnetic properties. Here we report the ability to engineer the microscopic edge termination of high quality GNRs via hydrogen plasma etching. Using a combination of high-resolution scanning tunneling microscopy and first-principles calculations, we have determined the exact atomic structure of plasma-etched GNR edges and established the chemical nature of terminating functional groups for zigzag, armchair and chiral edge orientations. We find that the edges of hydrogen-plasma-etched GNRs are generally flat, free of structural reconstructions and are terminated by hydrogen atoms with no rehybridization of the outermost carbon edge atoms. Both zigzag and chiral edges show the presence of edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High-throughput Imaging and Spectroscopy of Individual Carbon Nanotubes in Devices with Light Microscopy

Two paramount challenges in carbon nanotube research are achieving chirality-controlled synthesis and understanding chirality-dependent device physics. High-throughput and in-situ chirality and electronic structural characterization of individual carbon nanotubes is crucial for addressing these challenges. Optical imaging and spectroscopy has unparalleled throughput and specificity, but its realization for single nanotubes on substrates or in devices has long been an outstanding challenge. Here we demonstrate video-rate imaging and in-situ spectroscopy of individual carbon nanotubes on various substrates and in functional devices using a novel high-contrast polarization-based optical microscopy. Our technique enables the complete chirality profiling of hundreds of as-grown carbon nanotubes. In addition, we in-situ monitor nanotube electronic structure in active field-effect devices, and observe that high-order nanotube optical resonances are dramatically broadened by electrostatic doping. This unexpected behaviour points to strong interband electron-electron scattering processes that can dominate ultrafast dynamics of excited states in carbon nanotubes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical Control of Plasmon Resonance with Graphene

Surface plasmon, with its unique capability to concentrate light into sub-wavelength volume, has enabled great advances in photon science, ranging from nano-antenna and single-molecule Raman scattering to plasmonic waveguide and metamaterials. In many applications it is desirable to control the surface plasmon resonance in situ with electric field. Graphene, with its unique tunable optical properties, provides an ideal material to integrate with nanometallic structures for realizing such control. Here we demonstrate effective modulation of the plasmon resonance in a model system composed of hybrid graphene-gold nanorod structure. Upon electrical gating the strong optical transitions in graphene can be switched on and off, which leads to significant modulation of both the resonance frequency and quality factor of plasmon resonance in gold nanorods. Hybrid graphene-nanometallic structures, as exemplified by this combination of graphene and gold nanorod, provide a general and powerful way for electrical control of plasmon resonances. It holds promise for novel active optical devices and plasmonic circuits at the deep subwavelength scale.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Fermi velocity engineering in graphene by substrate modification

The Fermi velocity is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device applications, graphene is viewed as a prototypical system for engineering Fermi velocity. Indeed, several efforts have succeeded in modifying Fermi velocity by varying charge carrier concentration. Here we present a powerful but simple new way to engineer Fermi velocity while holding the charge carrier concentration constant. We find that when the environment embedding graphene is modified, the Fermi velocity of graphene is (i) inversely proportional to its dielectric constant, reaching ~2.5$\times10^6$ m/s, the highest value for graphene on any substrate studied so far and (ii) clearly distinguished from an ordinary Fermi liquid. The method demonstrated here provides a new route toward Fermi velocity engineering in a variety of two-dimensional electron systems including topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mapping Dirac Quasiparticles near a Single Coulomb Impurity on Graphene

The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from the behavior of non-relativistic electrons seen in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have yet to be tested in a laboratory. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a unique opportunity to experimentally test such predictions. The response of Dirac fermions to a Coulomb potential in graphene is central to a wide range of electronic phenomena and can serve as a sensitive probe of graphene's intrinsic dielectric constant, the primary factor determining the strength of electron-electron interactions in this material. Here we present a direct measurement of the nanoscale response of Dirac fermions to a single Coulomb potential placed on a gated graphene device. Scanning tunneling microscopy and spectroscopy were used to fabricate tunable charge impurities on graphene and to measure how they are screened by Dirac fermions for a Q = +1|e| impurity charge state. Electron-like and hole-like Dirac fermions were observed to respond very differently to tunable Coulomb potentials. Comparison of this electron-hole asymmetry to theoretical simulations has allowed us to test basic predictions for the behavior of Dirac fermions near a Coulomb potential and to extract the intrinsic dielectric constant of graphene: ε_g= 3.0 \pm 1.0. This small value of ε_g indicates that microscopic electron-electron interactions can contribute significantly to graphene properties.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spatially Resolving Spin-split Edge States of Chiral Graphene Nanoribbons

A central question in the field of graphene-related research is how graphene behaves when it is patterned at the nanometer scale with different edge geometries. Perhaps the most fundamental shape relevant to this question is the graphene nanoribbon (GNR), a narrow strip of graphene that can have different chirality depending on the angle at which it is cut. Such GNRs have been predicted to exhibit a wide range of behaviour (depending on their chirality and width) that includes tunable energy gaps and the presence of unique one-dimensional (1D) edge states with unusual magnetic structure. Most GNRs explored experimentally up to now have been characterized via electrical conductivity, leaving the critical relationship between electronic structure and local atomic geometry unclear (especially at edges). Here we present a sub-nm-resolved scanning tunnelling microscopy (STM) and spectroscopy (STS) study of GNRs that allows us to examine how GNR electronic structure depends on the chirality of atomically well-defined GNR edges. The GNRs used here were chemically synthesized via carbon nanotube (CNT) unzipping methods that allow flexible variation of GNR width, length, chirality, and substrate. Our STS measurements reveal the presence of 1D GNR edge states whose spatial characteristics closely match theoretical expectations for GNR's of similar width and chirality. We observe width-dependent splitting in the GNR edge state energy bands, providing compelling evidence of their magnetic nature. These results confirm the novel electronic behaviour predicted for GNRs with atomically clean edges, and thus open the door to a whole new area of applications exploiting the unique magnetoelectronic properties of chiral GNRs.

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preprint2010arXiv

Drude Conductivity of Dirac Fermions in Graphene

Electrons moving in graphene behave as massless Dirac fermions, and they exhibit fascinating low-frequency electrical transport phenomena. Their dynamic response, however, is little known at frequencies above one terahertz (THz). Such knowledge is important not only for a deeper understanding of the Dirac electron quantum transport, but also for graphene applications in ultrahigh speed THz electronics and IR optoelectronics. In this paper, we report the first measurement of high-frequency conductivity of graphene from THz to mid-IR at different carrier concentrations. The conductivity exhibits Drude-like frequency dependence and increases dramatically at THz frequencies, but its absolute strength is substantially lower than theoretical predictions. This anomalous reduction of free electron oscillator strength is corroborated by corresponding changes in graphene interband transitions, as required by the sum rule. Our surprising observation indicates that many-body effects and Dirac fermion-impurity interactions beyond current transport theories are important for Dirac fermion electrical response in graphene.

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preprint2010arXiv

Gate-Controlled Ionization and Screening of Cobalt Adatoms on a Graphene Surface

We describe scanning tunneling spectroscopy (STS) measurements performed on individual cobalt (Co) atoms deposited onto backgated graphene devices. We find that Co adatoms on graphene can be ionized by either the application of a global backgate voltage or by the application of a local electric field from a scanning tunneling microscope (STM) tip. Large screening clouds are observed to form around Co adatoms ionized in this way, and we observe that some intrinsic graphene defects display a similar behavior. Our results provide new insight into charged impurity scattering in graphene, as well as the possibility of using graphene devices as chemical sensors.

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preprint2009arXiv

A Tunable Phonon-Exciton Fano System in Bilayer Graphene

Interference between different possible paths lies at the heart of quantum physics. Such interference between coupled discrete and continuum states of a system can profoundly change its interaction with light as seen in Fano resonance. Here we present a unique many-body Fano system composed of a discrete phonon vibration and continuous electron-hole pair transitions in bilayer graphene. Mediated by the electron-phonon interactions, the excited state is described by new quanta of elementary excitations of hybrid phonon-exciton nature. Infrared absorption of the hybrid states exhibit characteristic Fano lineshapes with parameters renormalized by many-body interactions. Remarkably, the Fano resonance in bilayer graphene is continuously tunable through electrical gating. Further control of the phonon-exciton coupling may be achieved with an optical field exploiting the excited state infrared activity. This tunable phonon-exciton system also offers the intriguing possibility of a 'phonon laser' with stimulated phonon amplification generated by population inversion of band-edge electrons.

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preprint2009arXiv

Origin of Spatial Charge Inhomogeneity in Graphene

In an ideal graphene sheet charge carriers behave as two-dimensional (2D) Dirac fermions governed by the quantum mechanics of massless relativistic particles. This has been confirmed by the discovery of a half-integer quantum Hall effect in graphene flakes placed on a SiO2 substrate. The Dirac fermions in graphene, however, are subject to microscopic perturbations that include topographic corrugations and electron density inhomogeneities (i.e. charge puddles). Such perturbations profoundly alter Dirac fermion behavior, with implications for their fundamental physics as well as for future graphene device applications. Here we report a new technique of Dirac point mapping that we have used to determine the origin of charge inhomogeneities in graphene. We find that fluctuations in graphene charge density are not caused by topographical corrugations, but rather by charge-donating impurities below the graphene. These impurities induce unexpected standing wave patterns due to supposedly forbidden back-scattering of Dirac fermions. Such wave patterns can be continuously modulated by electric gating. Our observations provide new insight into impurity scattering of Dirac fermions and the microscopic mechanisms limiting electronic mobility in graphene.

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