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Hsin-Zon Tsai

Hsin-Zon Tsai appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

10 published item(s)

preprint2022arXiv

Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots

Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic states within these QDs is crucial for determining the existence of quantum chaos in these systems. We report the fabrication and characterization of electrostatically defined stadium-shaped QDs in heterostructure devices composed of monolayer graphene (MLG) and bilayer graphene (BLG). To realize a stadium-shaped QD, we utilized the tip of a scanning tunneling microscope to charge defects in a supporting hexagonal boron nitride flake. The stadium states visualized are consistent with tight-binding-based simulations, but lack clear quantum chaos signatures. The absence of quantum chaos features in MLG-based stadium QDs is attributed to the leaky nature of the confinement potential due to Klein tunneling. In contrast, for BLG-based stadium QDs (which have stronger confinement) quantum chaos is precluded by the smooth confinement potential which reduces interference and mixing between states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries

One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Visualizing Exotic Orbital Texture in the Single-Layer Mott Insulator 1T-TaSe2

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the exploration of novel Mott systems in the two-dimensional limit. Here we report characterization of the local electronic properties of single- and few-layer 1T-TaSe2 via spatial- and momentum-resolved spectroscopy involving scanning tunneling microscopy and angle-resolved photoemission. Our combined experimental and theoretical study indicates that electron correlation induces a robust Mott insulator state in single-layer 1T-TaSe2 that is accompanied by novel orbital texture. Inclusion of interlayer coupling weakens the insulating phase in 1T-TaSe2, as seen by strong reduction of its energy gap and quenching of its correlation-driven orbital texture in bilayer and trilayer 1T-TaSe2. Our results establish single-layer 1T-TaSe2 as a useful new platform for investigating strong correlation physics in two dimensions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Imaging electrostatically confined Dirac fermions in graphene quantum dots

Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisotropic transmission at pn junction boundaries. Reflection and transmission at these novel potential barriers should affect the quantum interference of electronic wavefunctions near these boundaries. Here we report the use of scanning tunneling microscopy (STM) to map the electronic structure of Dirac fermions confined by circular graphene pn junctions. These effective quantum dots were fabricated using a new technique involving local manipulation of defect charge within the insulating substrate beneath a graphene monolayer. Inside such graphene quantum dots we observe energy levels corresponding to quasi-bound states and we spatially visualize the quantum interference patterns of confined electrons. Dirac fermions outside these quantum dots exhibit Friedel oscillation-like behavior. Bolstered with a theoretical model describing relativistic particles in a harmonic oscillator potential, our findings yield new insight into the spatial behavior of electrostatically confined Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride (BN) heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path towards on-demand graphene pn junctions and ultra-thin memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Characterization of collective ground states in single-layer NbSe2

Layered transition metal dichalcogenides (TMDs) are ideal systems for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order and superconductivity. In bulk NbSe2 a CDW sets in at TCDW = 33 K and superconductivity sets in at Tc = 7.2 K. Below Tc these electronic states coexist but their microscopic formation mechanisms remain controversial. Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D. Superconductivity also still remains in the 2D limit, but its onset temperature is depressed to 1.9 K. Our STS measurements at 5 K reveal a CDW gap of Δ = 4 meV at the Fermi energy, which is accessible via STS due to the removal of bands crossing the Fermi level for a single layer. Our observations are consistent with the simplified (compared to bulk) electronic structure of single-layer NbSe2, thus providing new insight into CDW formation and superconductivity in this model strongly-correlated system.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene

Twisted bilayer graphene (tBLG) forms a quasicrystal whose structural and electronic properties depend on the angle of rotation between its layers. Here we present a scanning tunneling microscopy study of gate-tunable tBLG devices supported by atomically-smooth and chemically inert hexagonal boron nitride (BN). The high quality of these tBLG devices allows identification of coexisting moiré patterns and moiré super-superlattices produced by graphene-graphene and graphene-BN interlayer interactions. Furthermore, we examine additional tBLG spectroscopic features in the local density of states beyond the first van Hove singularity. Our experimental data is explained by a theory of moiré bands that incorporates ab initio calculations and confirms the strongly non-perturbative character of tBLG interlayer coupling in the small twist-angle regime.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene

Relativistic quantum mechanics predicts that when the charge of a superheavy atomic nucleus surpasses a certain threshold, the resulting strong Coulomb field causes an unusual atomic collapse state; this state exhibits an electron wave function component that falls toward the nucleus, as well as a positron component that escapes to infinity. In graphene, where charge carriers behave as massless relativistic particles, it has been predicted that highly charged impurities should exhibit resonances corresponding to these atomic collapse states. We have observed the formation of such resonances around artificial nuclei (clusters of charged calcium dimers) fabricated on gated graphene devices via atomic manipulation with a scanning tunneling microscope. The energy and spatial dependence of the atomic collapse state measured with scanning tunneling microscopy revealed unexpected behavior when occupied by electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy

Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularly important. Scanning tunneling microscopy (STM) has a history of imaging the electronic structure of individual point defects in conductors, semiconductors, and ultrathin films, but single-defect electronic characterization at the nanometer-scale remains an elusive goal for intrinsic bulk insulators. Here we report the characterization and manipulation of individual native defects in an intrinsic bulk hexagonal boron nitride (BN) insulator via STM. Normally, this would be impossible due to the lack of a conducting drain path for electrical current. We overcome this problem by employing a graphene/BN heterostructure, which exploits graphene's atomically thin nature to allow visualization of defect phenomena in the underlying bulk BN. We observe three different defect structures that we attribute to defects within the bulk insulating boron nitride. Using scanning tunneling spectroscopy (STS), we obtain charge and energy-level information for these BN defect structures. In addition to characterizing such defects, we find that it is also possible to manipulate them through voltage pulses applied to our STM tip.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Mapping Dirac Quasiparticles near a Single Coulomb Impurity on Graphene

The response of Dirac fermions to a Coulomb potential is predicted to differ significantly from the behavior of non-relativistic electrons seen in traditional atomic and impurity systems. Surprisingly, many key theoretical predictions for this ultra-relativistic regime have yet to be tested in a laboratory. Graphene, a 2D material in which electrons behave like massless Dirac fermions, provides a unique opportunity to experimentally test such predictions. The response of Dirac fermions to a Coulomb potential in graphene is central to a wide range of electronic phenomena and can serve as a sensitive probe of graphene's intrinsic dielectric constant, the primary factor determining the strength of electron-electron interactions in this material. Here we present a direct measurement of the nanoscale response of Dirac fermions to a single Coulomb potential placed on a gated graphene device. Scanning tunneling microscopy and spectroscopy were used to fabricate tunable charge impurities on graphene and to measure how they are screened by Dirac fermions for a Q = +1|e| impurity charge state. Electron-like and hole-like Dirac fermions were observed to respond very differently to tunable Coulomb potentials. Comparison of this electron-hole asymmetry to theoretical simulations has allowed us to test basic predictions for the behavior of Dirac fermions near a Coulomb potential and to extract the intrinsic dielectric constant of graphene: ε_g= 3.0 \pm 1.0. This small value of ε_g indicates that microscopic electron-electron interactions can contribute significantly to graphene properties.

0 citations0 reviewsNo code linkedOpen access