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Darshana Wickramaratne

Darshana Wickramaratne appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.supr-conphysics.app-phphysics.chem-phphysics.comp-phphysics.optics

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Published work

8 published item(s)

preprint2022arXiv

Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature

Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of x161), peak position (38.4meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762uW) in ambient. Changes are spatially confined to the laser spot, enabling submicron (814nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs. non-radiative recombination pathways, where oxygen absorption leads to brightening, and desorption to darkening.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Nontrivial doping evolution of electronic properties in Ising-superconducting alloys

Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, we present the atomic-scale evolution of the electronic ground state of a monolayer of Nb$_{1-δ}$Mo$_δ$Se$_2$ across the entire alloy composition range (0 < $δ$ < 1) using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, we investigate the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe$_2$ to MoSe$_2$). Our measurements let us extract the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with $δ$. Furthermore, we demonstrate that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder. We further show that the superconducting TC changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. We show that Mo doping decreases the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. Our results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Stacking-Dependent Optical Properties in Bilayer WSe2

The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 homobilayers with 2H and 3R stacking using photoluminescence, Raman spectroscopy, and reflectance contrast measurements under ambient and cryogenic temperatures. Clear stacking- dependent differences are evident for all temperatures, with both photoluminescence and reflectance contrast spectra exhibiting a blue shift in spectral features in 2H compared to 3R bilayers. Density functional theory (DFT) calculations elucidate the source of the variations and the fundamental differences between 2H and 3R stackings. DFT finds larger energies for both A and B excitonic features in 2H than in 3R, consistent with experimental results. In both stacking geometries, the intensity of the dominant A1g Raman mode exhibits significant changes as a function of laser excitation wavelength. These variations in intensity are intimately linked to the stacking- and temperature-dependent optical absorption through resonant enhancement effects. The strongest enhancement is achieved when the laser excitation coincides with the C excitonic feature, leading to the largest Raman intensity under 514 nm excitation in 2H stacking and at 520 nm in 3R stacked WSe2 bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic and Thermoelectric Properties of Few-Layer Transition Metal Dichalcogenides

The electronic and thermoelectric properties of one to four monolayers of MoS$_{2}$, MoSe$_{2}$, WS$_{2}$, and WSe$_{2}$ are calculated. For few layer thicknesses,the near degeneracies of the conduction band $K$ and $Σ$ valleys and the valence band $Γ$ and $K$ valleys enhance the n-type and p-type thermoelectric performance. The interlayer hybridization and energy level splitting determine how the number of modes within $k_BT$ of a valley minimum changes with layer thickness. In all cases, the maximum ZT coincides with the greatest near-degeneracy within $k_BT$ of the band edge that results in the sharpest turn-on of the density of modes. The thickness at which this maximum occurs is, in general, not a monolayer. The transition from few layers to bulk is discussed. Effective masses, energy gaps, power-factors, and ZT values are tabulated for all materials and layer thicknesses.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Gate Tunable Quantum Oscillations in Air-Stable and High Mobility Few-Layer Phosphorene Heterostructures

As the only non-carbon elemental layered allotrope, few-layer black phosphorus or phosphorene has emerged as a novel two-dimensional (2D) semiconductor with both high bulk mobility and a band gap. Here we report fabrication and transport measurements of phosphorene-hexagonal BN (hBN) heterostructures with one-dimensional (1D) edge contacts. These transistors are stable in ambient conditions for >300 hours, and display ambipolar behavior, a gate-dependent metal-insulator transition, and mobility up to 4000 $cm^2$/Vs. At low temperatures, we observe gate-tunable Shubnikov de Haas (SdH) magneto-oscillations and Zeeman splitting in magnetic field with an estimated g-factor ~2. The cyclotron mass of few-layer phosphorene holes is determined to increase from 0.25 to 0.31 $m_e$ as the Fermi level moves towards the valence band edge. Our results underscore the potential of few-layer phosphorene (FLP) as both a platform for novel 2D physics and an electronic material for semiconductor applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials

The valence band of a variety of few-layer, two-dimensional materials consists of a ring of states in the Brillouin zone. The energy-momentum relation has the form of a `Mexican hat' or a Rashba dispersion. The two-dimensional density of states is singular at or near the band edge, and the band-edge density of modes turns on nearly abruptly as a step function. The large band-edge density of modes enhances the Seebeck coefficient, the power factor, and the thermoelectric figure of merit ZT. Electronic and thermoelectric properties are determined from ab initio calculations for few-layer III-VI materials GaS, GaSe, InS, InSe, for Bi$_{2}$Se$_{3}$, for monolayer Bi, and for bilayer graphene as a function of vertical field. The effect of interlayer coupling on these properties in few-layer III-VI materials and Bi$_{2}$Se$_{3}$ is described. Analytical models provide insight into the layer dependent trends that are relatively consistent for all of these few-layer materials. Vertically biased bilayer graphene could serve as an experimental test-bed for measuring these effects.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Charge Density Waves in Exfoliated Thin Films of Van der Waals Materials

A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of titanium diselenide crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of titanium diselenide films. It was established that the transition temperature can increase from its bulk value to ~240 K as the thickness of the van-der-Waals films reduces to the nanometer range. The obtained results are important for the proposed applications of such materials in the collective-state information processing, which require room-temperature operation.

0 citations0 reviewsNo code linkedOpen access