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Berend T. Jonker

Berend T. Jonker appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.otherphysics.app-phphysics.opticsphysics.chem-ph

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Published work

16 published item(s)

preprint2023arXiv

Interlayer Exciton-Phonon Bound State in Bi2Se3/monolayer WS2 van der Waals Heterostructures

The ability to assemble layers of two-dimensional (2D) materials to form permutations of van der Waals heterostructures provides significant opportunities in materials design and synthesis. Interlayer interactions provide a path to new properties and functionality, and understanding such interactions is essential to that end. Here we report formation of interlayer exciton-phonon bound states in Bi2Se3/WS2 heterostructures, where the Bi2Se3 A1(3) surface phonon, a mode particularly susceptible to electron-phonon coupling, is imprinted onto the excitonic emission of the WS2. The exciton-phonon bound state (or exciton-phonon quasiparticle) presents itself as evenly separated peaks superposed on the WS2 excitonic photoluminescence spectrum, whose periodic spacing corresponds to the A1(3) surface phonon energy. Low-temperature polarized Raman spectroscopy of Bi2Se3 reveals intense surface phonons and local symmetry breaking that allows the A1(3) surface phonon to manifest in otherwise forbidden scattering geometries. Our work advances knowledge of the complex interlayer van der Waals interactions, and facilitates technologies that combine the distinctive transport and optical properties from separate materials into one device for possible spintronics, valleytronics, and quantum computing applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Laser-patterned submicron Bi2Se3-WS2 pixels with tunable circular polarization at room temperature

Characterizing and manipulating the circular polarization of light is central to numerous emerging technologies, including spintronics and quantum computing. Separately, monolayer tungsten disulfide (WS2) is a versatile material that has demonstrated promise in a variety of applications, including single photon emitters and valleytronics. Here, we demonstrate a method to tune the photoluminescence (PL) intensity (factor of x161), peak position (38.4meV range), circular polarization (39.4% range), and valley polarization of a Bi2Se3-WS2 2D heterostructure using a low-power laser (0.762uW) in ambient. Changes are spatially confined to the laser spot, enabling submicron (814nm) features, and are long-term stable (>334 days). PL and valley polarization changes can be controllably reversed through laser exposure in vacuum, allowing the material to be erased and reused. Atmospheric experiments and first-principles calculations indicate oxygen diffusion modulates the exciton radiative vs. non-radiative recombination pathways, where oxygen absorption leads to brightening, and desorption to darkening.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Room-temperature oxygen transport in nano-thin BixOySez enables precision modulation of 2D materials

Oxygen conductors and transporters are important to several consequential renewable energy technologies, including fuel cells and syngas production. Separately, monolayer transition metal dichalcogenides (TMDs) have demonstrated significant promise for a range of applications, including quantum computing, advanced sensors, valleytronics, and next-gen optoelectronics. Here, we synthesize a few nanometer-thick BixOySez compound that strongly resembles a rare R3m bismuth oxide (Bi2O3) phase, and combine it with monolayer TMDs, which are highly sensitive to their environment. We use the resulting 2D heterostructure to study oxygen transport through BixOySez into the interlayer region, whereby the 2D material properties are modulated, finding extraordinarily fast diffusion at room temperature under laser exposure. The oxygen diffusion enables reversible and precise modification of the 2D material properties by controllably intercalating and deintercalating oxygen. Changes are spatially confined, enabling submicron features (e.g. pixels), and are long-term stable for more than 221 days. Our work suggests few nanometer-thick BixOySez is a promising unexplored room-temperature oxygen transporter. Additionally, our findings suggest the mechanism can be applied to other 2D materials as a generalized method to manipulate their properties with high precision and submicron spatial resolution.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Stacking-Dependent Optical Properties in Bilayer WSe2

The twist angle between the monolayers in van der Waals heterostructures provides a new degree of freedom in tuning material properties. We compare the optical properties of WSe2 homobilayers with 2H and 3R stacking using photoluminescence, Raman spectroscopy, and reflectance contrast measurements under ambient and cryogenic temperatures. Clear stacking- dependent differences are evident for all temperatures, with both photoluminescence and reflectance contrast spectra exhibiting a blue shift in spectral features in 2H compared to 3R bilayers. Density functional theory (DFT) calculations elucidate the source of the variations and the fundamental differences between 2H and 3R stackings. DFT finds larger energies for both A and B excitonic features in 2H than in 3R, consistent with experimental results. In both stacking geometries, the intensity of the dominant A1g Raman mode exhibits significant changes as a function of laser excitation wavelength. These variations in intensity are intimately linked to the stacking- and temperature-dependent optical absorption through resonant enhancement effects. The strongest enhancement is achieved when the laser excitation coincides with the C excitonic feature, leading to the largest Raman intensity under 514 nm excitation in 2H stacking and at 520 nm in 3R stacked WSe2 bilayers.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Emergent electric field control of phase transformation in oxide superlattices

Electric fields can transform materials with respect to their structure and properties, enabling various applications ranging from batteries to spintronics. Recently electrolytic gating, which can generate large electric fields and voltage-driven ion transfer, has been identified as a powerful means to achieve electric-field-controlled phase transformations. The class of transition metal oxides (TMOs) provide many potential candidates that present a strong response under electrolytic gating. However, very few show a reversible structural transformation at room-temperature. Here, we report the realization of a digitally synthesized TMO that shows a reversible, electric-field-controlled transformation between distinct crystalline phases at room-temperature. In superlattices comprised of alternating one-unit-cell of SrIrO3 and La0.2Sr0.8MnO3, we find a reversible phase transformation with a 7% lattice change and dramatic modulation in chemical, electronic, magnetic and optical properties, mediated by the reversible transfer of oxygen and hydrogen ions. Strikingly, this phase transformation is absent in the constituent oxides, solid solutions and larger period superlattices. Our findings open up a new class of materials for voltage-controlled functionality.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Atomic reconstruction and moiré patterns in transition metal dichalcogenide van der Waals heterostructures

Van der Waals layered materials, such as transition metal dichalcogenides (TMDs), are an exciting class of materials with weak interlayer bonding which enables one to create van der Waals heterostructures (vdWH). Recent work has shown that control of the twist angle between layers can have a dramatic effect on vdWH properties. For TMD vdWH, twist angle has been treated solely through the use of rigid-lattice moiré patterns. No atomic reconstruction, i.e. any rearrangement of atoms within the individual layers, has been reported experimentally to date. Here we demonstrate that vdWH of MoSe2/WSe2 and MoS2/WS2 at twist angles less than 1° undergo significant atomic level reconstruction leading to discrete commensurate domains divided by narrow domain walls, rather than a smoothly varying rigid-lattice moiré pattern as has been assumed in prior work. Using conductive atomic force microscopy (CAFM), we show that the stacking orientation of the two TMD crystals has a profound impact on the atomic reconstruction, consistent with recent theoretical work on graphene/graphene and MoS2/MoS2 structures and experimental work on graphene bilayers and hBN/graphene vdWH. Transmission electron microscopy (TEM) provides additional evidence of atomic reconstruction in MoSe2/WSe2 structures and demonstrates the transition between a rigid-lattice moiré pattern for large angles and atomic reconstruction for small angles. We use density functional theory to calculate the band structures of the commensurate reconstructed domains and find that the modulation of the relative electronic band edges is consistent with the CAFM results and photoluminescence spectra from reconstructed vdWH. The presence of atomic reconstruction in TMD heterostructures and the observed impact on nanometer-scale electronic properties provides fundamental insight into the behavior of this important class of heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Direct observation of minibands in twisted heterobilayers

Stacking two-dimensional (2D) van der Waals materials with different interlayer atomic registry in a heterobilayer causes the formation of a long-range periodic superlattice that may bestow the heterostructure with exotic properties such as new quantum fractal states [1-3] or superconductivity [4, 5]. Recent optical measurements of transition metal dichalcogenide (TMD) heterobilayers have revealed the presence of hybridized interlayer electron-hole pair excitations at energies defined by the superlattice potential [6-10]. The corresponding quasiparticle band structure, so-called minibands, have remained elusive and no such features have been reported for heterobilayers comprised of a TMD and another type of 2D material. Here, we introduce a new X-ray capillary technology for performing micro-focused angle-resolved photoemission spectroscopy (microARPES) with a spatial resolution on the order of 1 $μ$m, enabling us to map the momentum-dependent quasiparticle dispersion of heterobilayers consisting of graphene on WS$_2$ at variable interlayer twist angles ($θ$). Minibands are directly observed for $θ= 2.5^{\circ}$ in multiple mini Brillouin zones (mBZs), while they are absent for a larger twist angle of $θ= 26.3^{\circ}$. These findings underline the possibility to control quantum states via the stacking configuration in 2D heterostructures, opening multiple new avenues for generating materials with enhanced functionality such as tunable electronic correlations [11] and tailored selection rules for optical transitions [12].

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Imaging microscopic electronic contrasts at the interface of single-layer WS$_2$ with oxide and boron nitride substrates

The electronic properties of devices based on two-dimensional materials are significantly influenced by interactions with substrate and electrode materials. Here, we use photoemission electron microscopy to investigate the real- and momentum-space electronic structures of electrically contacted single-layer WS$_2$ stacked on hBN, SiO$_2$ and TiO$_2$ substrates. Using work function and X-ray absorption imaging we single-out clean microscopic regions of each interface type and collect the valence band dispersion. We infer the alignments of the electronic band gaps and electron affinities from the measured valence band offsets of WS$_2$ and the three substrate materials using a simple electron affinity rule and discuss the implications for vertical band structure engineering using mixed three- and two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magneto-reflection spectroscopy of monolayer transition-metal dichalcogenide semiconductors in pulsed magnetic fields

We describe recent experimental efforts to perform polarization-resolved optical spectroscopy of monolayer transition-metal dichalcogenide semiconductors in very large pulsed magnetic fields to 65 tesla. The experimental setup and technical challenges are discussed in detail, and temperature-dependent magneto-reflection spectra from atomically thin tungsten disulphide (WS$_2$) are presented. The data clearly reveal not only the valley Zeeman effect in these 2D semiconductors, but also the small quadratic exciton diamagnetic shift from which the very small exciton size can be directly inferred. Finally, we present model calculations that demonstrate how the measured diamagnetic shifts can be used to constrain estimates of the exciton binding energy in this new family of monolayer semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical polarization and intervalley scattering in single layers of MoS2 and MoSe2

Single layers of MoS2 and MoSe2 were optically pumped with circularly polarized light and an appreciable polarization was initialized as the pump energy was varied. The circular polarization of the emitted photoluminescence was monitored as function of the difference between the excitation energy and the A-exciton emission at the K-point of the Brillouin zone. Our results show a threshold of twice the LA phonon energy, specific to the material, above which phonon-assisted intervalley scattering causes depolarization. In both materials this lead to almost complete depolarization within ~100 meV above the threshold energy. We identify the extra kinetic energy of the exciton (independent of whether it is neutral or charged) as the key parameter for presenting a unifying picture of the depolarization process.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spatially Resolved Electronic Properties of Single-Layer WS$_2$ on Transition Metal Oxides

There is a substantial interest in the heterostructures of semiconducting transition metal dichalcogenides (TMDCs) amongst each other or with arbitrary materials, through which the control of the chemical, structural, electronic, spintronic, and optical properties can lead to a change in device paradigms. A critical need is to understand the interface between TMDCs and insulating substrates, for example high-$κ$ dielectrics, which can strongly impact the electronic properties such as the optical gap. Here we show that the chemical and electronic properties of the single-layer (SL) TMDC, WS$_2$, can be transferred onto high-$κ$ transition metal oxide substrates TiO$_2$ and SrTiO$_3$. The resulting samples are much more suitable for measuring their electronic and chemical structures with angle-resolved photoemission than their native-grown SiO$_2$ substrates. We probe the WS$_2$ on the micron scale across 100-micron flakes, and find that the occupied electronic structure is exactly as predicted for freestanding SL WS$_2$ with a strong spin-orbit splitting of 420~meV and a direct band gap at the valence band maximum. Our results suggest that TMDCs can be combined with arbitrary multi-functional oxides, which may introduce alternative means of controlling the optoelectronic properties of such materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The Effect of Preparation Conditions on Raman and Photoluminescence of Monolayer WS2

We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Anomalous temperature-dependent spin-valley polarization in monolayer WS$_{2}$

Single layers of transition metal dichalcogenides (TMDs) are direct gap semiconductors with nondegenerate valley indices. An intriguing possibility for these materials is the use of their valley index as an alternate state variable. Several limitations to such a utility include strong, phonon-enabled intervalley scattering, as well as multiparticle interactions leading to multiple emission channels. We prepare single-layer WS$_{2}$ such that the photoluminescence is from either the neutral or charged exciton (trion). After excitation with circularly polarized light, the neutral exciton emission has zero polarization, however, the trion emission has a large polarization (28%) at room temperature. The trion emission also has a unique, non-monotonic temperature dependence that we show is a consequence of the multiparticle nature of the trion. This temperature dependence enables us to determine that coulomb assisted intervalley scattering, electron-hole radiative recombination, and a 3-particle Auger process are the dominant mechanisms at work in this system. Because this dependence involves trion systems, one can use gate voltages to modulate the polarization (or intensity) emitted from TMD structures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Exciton Diamagnetic Shifts and Valley Zeeman Effects in Monolayer WS$_2$ and MoS$_2$ to 65 Tesla

We report circularly-polarized optical reflection spectroscopy of monolayer WS$_2$ and MoS$_2$ at low temperatures (4~K) and in high magnetic fields to 65~T. Both the A and the B exciton transitions exhibit a clear and very similar Zeeman splitting of approximately $-$230~$μ$eV/T ($g\simeq -4$), providing the first measurements of the valley Zeeman effect and associated $g$-factors in monolayer transition-metal disulphides. These results complement and are compared with recent low-field photoluminescence measurements of valley degeneracy breaking in the monolayer diselenides MoSe$_2$ and WSe$_2$. Further, the very large magnetic fields used in our studies allows us to observe the small quadratic diamagnetic shifts of the A and B excitons in monolayer WS$_2$ (0.32 and 0.11~$μ$eV/T$^2$, respectively), from which we calculate exciton radii of 1.53~nm and 1.16~nm. When analyzed within a model of non-local dielectric screening in monolayer semiconductors, these diamagnetic shifts also constrain and provide estimates of the exciton binding energies (410~meV and 470~meV for the A and B excitons, respectively), further highlighting the utility of high magnetic fields for understanding new 2D materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin coherence and dephasing of localized electrons in monolayer MoS$_2$

We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS$_2$. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond-timescale Larmor spin precession signal commensurate with $g$-factor $|g_0|\simeq 1.86$ is observed in several different MoS$_2$ samples grown by chemical vapor deposition. The dephasing rate of this oscillatory signal increases linearly with magnetic field, suggesting that the coherence arises from a sub-ensemble of localized electron spins having an inhomogeneously-broadened distribution of $g$-factors, $g_0 + Δg$. In contrast to $g_0$, $Δg$ is sample-dependent and ranges from 0.042 to 0.115.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Synthesis of Large-Area WS2 monolayers with Exceptional Photoluminescence

Monolayer WS2 offers great promise for use in optical devices due to its direct bandgap and high photoluminescence intensity. While fundamental investigations can be performed on exfoliated material, large-area and high quality materials are essential for implementation of technological applications. In this work, we synthesize monolayer WS2 under various controlled conditions and characterize the films using photoluminescence, Raman and x-ray photoelectron spectroscopies. We demonstrate that the introduction of hydrogen to the argon carrier gas dramatically improves the optical quality and increases the growth area of WS2, resulting in films exhibiting mm2 coverage. The addition of hydrogen more effectively reduces the WO3 precursor and protects against oxidative etching of the synthesized monolayers. The stoichiometric WS2 monolayers synthesized using Ar+H2 carrier gas exhibit superior optical characteristics, with photoluminescence emission full width half maximum values below 40 meV and emission intensities nearly an order of magnitude higher than films synthesized in a pure Ar environment.

0 citations0 reviewsNo code linkedOpen access