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Dapeng Yu

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Published work

34 published item(s)

preprint2023arXiv

Multi-Level Variational Spectroscopy using a Programmable Quantum Simulator

Energy spectroscopy is a powerful tool with diverse applications across various disciplines. The advent of programmable digital quantum simulators opens new possibilities for conducting spectroscopy on various models using a single device. Variational quantum-classical algorithms have emerged as a promising approach for achieving such tasks on near-term quantum simulators, despite facing significant quantum and classical resource overheads. Here, we experimentally demonstrate multi-level variational spectroscopy for fundamental many-body Hamiltonians using a superconducting programmable digital quantum simulator. By exploiting symmetries, we effectively reduce circuit depth and optimization parameters allowing us to go beyond the ground state. Combined with the subspace search method, we achieve full spectroscopy for a 4-qubit Heisenberg spin chain, yielding an average deviation of 0.13 between experimental and theoretical energies, assuming unity coupling strength. Our method, when extended to 8-qubit Heisenberg and transverse-field Ising Hamiltonians, successfully determines the three lowest energy levels. In achieving the above, we introduce a circuit-agnostic waveform compilation method that enhances the robustness of our simulator against signal crosstalk. Our study highlights symmetry-assisted resource efficiency in variational quantum algorithms and lays the foundation for practical spectroscopy on near-term quantum simulators, with potential applications in quantum chemistry and condensed matter physics.

preprint2022arXiv

Evidence of Magnon-Mediated Orbital Magnetism in a Quasi-2D Topological Magnon Insulator

We explore spin dynamics in Cu(1,3-bdc), a quasi-2D topological magnon insulator. The results show that the thermal evolution of Landé $g$-factor ($g$) is anisotropic: $g_\textrm{in-plane}$ reduces while $g_\textrm{out-plane}$ increases with increasing temperature $T$. Moreover, the anisotropy of the $g$-factor ($Δg$) and the anisotropy of saturation magnetization ($ΔM_\textrm{s}$) are correlated below 4 K, but they diverge above 4 K. We show that the electronic orbital moment contributes to the $g$ anisotropy at lower $T$, while the topological orbital moment induced by thermally excited spin chirality dictates the $g$ anisotropy at higher $T$. Our work suggests an interplay among topology, spin chirality, and orbital magnetism in Cu(1,3-bdc).

preprint2022arXiv

Exchange bias in van der Waals MnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure

The layered van der Waals (vdW) material MnBi$_2$Te$_4$ is an intrinsic magnetic topological insulator with various topological phases such as quantum anomalous Hall effect (QAHE) and axion states. However, both the zero-field and high-temperature QAHE are not easy to realize. It is theoretically proposed that the exchange bias can be introduced in the MnBi2Te4/ferromagnetic (FM) insulator heterostructures and thus opens the surface states gap, making it easier to realize the zero-field or high-temperature QAHE. Here we report the electrically tunable exchange bias in the van der Waals MnBi$_2$Te$_4$/Cr$_2$Ge$_2$Te$_6$ heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the magnetic band gap. Moreover, the exchange bias was experienced by the antiferromagnetic (AFM) MnBi$_2$Te$_4$ layer rather than the FM layer. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible high-temperature QAHE.

preprint2022arXiv

Optimal charging of a superconducting quantum battery

Quantum batteries are miniature energy storage devices and play a very important role in quantum thermodynamics. In recent years, quantum batteries have been extensively studied, but limited in theoretical level. Here we report the experimental realization of a quantum battery based on superconducting qubits. Our model explores dark and bright states to achieve stable and powerful charging processes, respectively. Our scheme makes use of the quantum adiabatic brachistochrone, which allows us to speed up the {battery ergotropy injection. Due to the inherent interaction of the system with its surrounding, the battery exhibits a self-discharge, which is shown to be described by a supercapacitor-like self-discharging mechanism. Our results paves the way for proposals of new superconducting circuits able to store extractable work for further usage.

preprint2022arXiv

Scalable Method for Eliminating Residual $ZZ$ Interaction between Superconducting Qubits

Unwanted $ZZ$ interaction is a quantum-mechanical crosstalk phenomenon which correlates qubit dynamics and is ubiquitous in superconducting qubit systems. It adversely affects the quality of quantum operations and can be detrimental in scalable quantum information processing. Here we propose and experimentally demonstrate a practically extensible approach for complete cancellation of residual $ZZ$ interaction between fixed-frequency transmon qubits, which are known for long coherence and simple control. We apply to the intermediate coupler that connects the qubits a weak microwave drive at a properly chosen frequency in order to noninvasively induce an ac Stark shift for $ZZ$ cancellation. We verify the cancellation performance by measuring vanishing two-qubit entangling phases and $ZZ$ correlations. In addition, we implement a randomized benchmarking experiment to extract the idling gate fidelity which shows good agreement with the coherence limit, demonstrating the effectiveness of $ZZ$ cancellation. Our method allows independent addressability of each qubit-qubit connection, and is applicable to both nontunable and tunable couplers, promising better compatibility with future large-scale quantum processors.

preprint2022arXiv

Tunable quantum interference effects in Floquet two- and three-level systems

Quantum interference effects in the unmodulated quantum systems with light-matter interaction have been widely studied, such as electromagnetically induced transparency (EIT) and Autler-Townes splitting (ATS). However, the similar quantum interference effects in the Floquet systems (i.e., periodically modulated systems), which might cover rich new physics, were rarely studied. In this article, we investigate the quantum interference effects in the Floquet two- and three-level systems analytically and numerically. We show a coherent destruction tunneling effect in a lotuslike multipeak spectrum with a Floquet two-level system, where the intensity of the probe field is periodically modulated with a square-wave sequence. We demonstrate that the multipeak split into multiple transparency windows with tunable quantum interference if the Floquet system is asynchronously controlled via a third level. Based on phenomenological analysis with Akaike information criterion, we show that the symmetric central transparency window has a similar mechanism to the traditional ATS or EIT depending on the choice of parameters, additional with an extra degree of freedom to control the quantum interference provided by the modulation period. The other transparent windows are shown to be asymmetric, different from the traditional ATS and EIT windows. These nontrivial quantum interference effects open up a scope to explore the applications of the Floquet systems.

preprint2021arXiv

Many-body critical phase: extended and nonthermal

The transition between ergodic phase and many-body localization (MBL) phase lies at the heart in understanding quantum thermalization of many-body systems. Here we predict a many-body critical phase in the one-dimensional extended Aubry-André-Harper-Hubbard model, which is different from both the ergodic phase and MBL phase, implying that the quantum system hosts three different fundamental phases. It is shown that the level statistics in the many-body critical phase are well characterized by the so-called critical statistics, and the wave functions in this phase generally exhibit a multifractal behavior. We further study the half-chain entanglement entropy (EE) and thermalization properties by exact diagonalization, which show that the EE in this critical phase manifest a volume law EE scaling while the many-body states violate the eigenstate thermalization hypothesis. This work unveils a novel many-body phase which is extended but non-ergodic.

preprint2021arXiv

Measuring phonon dispersion at an interface

The breakdown of translational symmetry at heterointerfaces leads to the emergence of new phonon modes localized near the interface. These interface phonons play an essential role in thermal/electrical transport properties in devices especially in miniature ones wherein the interface may dominate the entire response of the device. Knowledge of phonon dispersion at interfaces is therefore highly desirable for device design and optimization. Although theoretical work has begun decades ago, experimental research is totally absent due to challenges in achieving combined spatial, momentum and spectral resolutions required to probe localized phonon modes. Here we use electron energy loss spectroscopy in an electron microscope to directly measure both the local phonon density of states and the interface phonon dispersion relation for an epitaxial cBN-diamond heterointerface. In addition to bulk phonon modes, we observe acoustic and optical phonon modes localized at the interface, and modes isolated away from the interface. These features only appear within ~ 1 nm around the interface. The experimental results can be nicely reproduced by ab initio calculations. Our findings provide insights into lattice dynamics at heterointerfaces and should be practically useful in thermal/electrical engineering.

preprint2020arXiv

Core-level x-ray photoemission and Raman spectroscopy studies on electronic structures in Mott-Hubbard type nickelate oxide NdNiO$_2$

We perform core-level X-ray photoemission spectroscopy (XPS) and electronic Raman scattering studies of electronic structures and spin fluctuations in the bulk samples of the nickelate oxide NdNiO$_2$. According to Nd $3d$ and O $1s$ XPS spectra, we conclude that NdNiO$_2$ has a large transfer energy. From the analysis of the main line of the Ni $2p_{3/2}$ XPS, we confirm the NiO$_2$ planes in NdNiO$_2$ are of Mott-Hubbard type in the Zaanen-Sawatzky-Allen scheme. The two-magnon peak in the Raman scattering provides direct evidence for the strong spin-fluctuation in NdNiO$_2$. The peak position determines the antiferromagnetic exchange $J=25$~meV. Our experimental results agree well with our previous theoretical results.

preprint2020arXiv

Creating topological polar structure in a nonpolar matter

Nontrivial topological structures offer rich playground in condensed matter physics including fluid dynamics, superconductivity, and ferromagnetism, and they promise alternative device configurations for post-Moore spintronics and electronics. Indeed, magnetic skyrmions are actively pursued for high-density data storage, while polar vortices with exotic negative capacitance may enable ultralow power consumption in microelectronics. Following extensive investigations on a variety of magnetic textures including vortices, domain walls and skyrmions in the past decades, studies on polar topologies have taken off in recent years, resulting in discoveries of closure domains, vortices, and skyrmions in ferroelectric materials. Nevertheless, the atomic-scale creation of topological polar structures is largely confined in a single ferroelectric system, PbTiO3 (PTO) with large polarization, casting doubt on the generality of polar topologies and limiting their potential applications. In this work, we successfully create previously unrealized atomic-scale polar antivortices in the nominally nonpolar SrTiO3 (STO), expanding the reaches of topological structures and completing an important missing link in polar topologies. The work shed considerable new insight into the formation of topological polar structures, and offers guidance in searching for new polar textures.

preprint2020arXiv

Four-dimensional Vibrational Spectroscopy for Nanoscale Mapping of Phonon Dispersion in BN Nanotubes

Direct measurement of local phonon dispersion in individual nanostructures can greatly advance our understanding of their electrical, thermal, and mechanical properties. However, such experimental measurements require extremely high detection sensitivity and combined spatial, energy and momentum resolutions, thus has been elusive. Here, we develop a four-dimensional electron energy loss spectroscopy (4D-EELS) technique based a monochromated scanning transmission electron microscope (STEM), and present the position-dependent phonon dispersion measurement in individual boron nitride nanotubes (BNNTs). Our measurement shows that the unfolded phonon dispersion of multi-walled BNNTs is close to hexagonal-boron nitride (h-BN) crystals, suggesting that interlayer coupling and curved geometry have no substantial impacts on phonon dispersion. We also find that the acoustic phonons are extremely sensitive to momentum-dependent defect scattering, while optical phonons are much less susceptible. This work not only provides useful insights into vibrational properties of BNNTs, but also demonstrates huge prospects of the developed 4D-EELS technique in nanoscale phonon dispersion measurements.

preprint2020arXiv

Observation of a thermoelectric Hall plateau in the extreme quantum limit

The thermoelectric Hall effect is the generation of a transverse heat current upon applying an electric field in the presence of a magnetic field. Here we demonstrate that the thermoelectric Hall conductivity $α_{xy}$ in the three-dimensional Dirac semimetal ZrTe$_5$ acquires a robust plateau in the extreme quantum limit of magnetic field. The plateau value is independent of the field strength, disorder strength, carrier concentration, or carrier sign. We explain this plateau theoretically and show that it is a unique signature of three-dimensional Dirac or Weyl electrons in the extreme quantum limit. We further find that other thermoelectric coefficients, such as the thermopower and Nernst coefficient, are greatly enhanced over their zero-field values even at relatively low fields.

preprint2020arXiv

Pressure-dependent Intermediate Magnetic Phase in Thin Fe$_3$GeTe$_2$ Flakes

We investigated the evolution of ferromagnetism in layered Fe$_3$GeTe$_2$ flakes under different pressures and temperatures using in situ magnetic circular dichroism (MCD) spectroscopy. We found that the rectangle shape of hysteretic loop under an out-of-plane magnetic field sweep can sustain below 7 GPa. Above that pressure, an intermediate state appears at low temperature region signaled by an 8-shaped skew hysteretic loop. Meanwhile, the coercive field and Curie temperature decrease with increasing pressures, implying the decrease of the exchange interaction and the magneto-crystalline anisotropy under pressures. The intermediate phase has a labyrinthine domain structure, which is attributed to the increase of ratio of exchange interaction to magneto-crystalline anisotropy based on Jagla's theory. Moreover, our calculation results reveal a weak structural transition around 6 GPa, which leads to a drop of the magnetic momentum of Fe ions.

preprint2020arXiv

Quantum Control via Stimulated Raman User-defined Passage

Stimulated Raman adiabatic passage (STIRAP) is a widely-used technique of coherent state-to-state manipulation for many applications in physics, chemistry, and beyond. The adiabatic evolution of the state involved in STIRAP, called adiabatic passage, guarantees its robustness against control errors, but also leads to problems of low efficiency and decoherence. Here we propose and experimentally demonstrate an alternative approach, termed stimulated Raman "user-defined" passage (STIRUP), where a parameterized state is employed for constructing desired evolutions to replace the adiabatic passage in STIRAP. The user-defined passages can be flexibly designed for optimizing different objectives for different tasks, e.g. minimizing leakage error. To experimentally benchmark its performance, we apply STIRUP to the task of coherent state transfer in a superconducting Xmon qutrit. We found that STIRUP completed the transfer more then four times faster than STIRAP with enhanced robustness, and achieved a fidelity of 99.5%, which is the highest among all recent experiments based on STIRAP and its variants. In practice, STIRUP differs from STIRAP only in the design of driving pulses; therefore, most existing applications of STIRAP can be readily implemented with STIRUP.

preprint2020arXiv

Realization and detection of non-ergodic critical phases in optical Raman lattice

The critical phases, being delocalized but non-ergodic, are fundamental phases which are different from both the many-body localization and ergodic extended quantum phases, and have so far not been realized in experiment. Here we propose to realize such critical phases with and without interaction based on a topological optical Raman lattice scheme, which possesses one-dimensional spin-orbit coupling and an incommensurate Zeeman potential. We demonstrate the existence of both the noninteracting and many-body critical phases, which can coexist with the topological phase, and show that the critical-localization transition coincides with the topological phase boundary in noninteracting regime. The dynamical detection of the critical phases is proposed and studied in detail. Finally, we demonstrate how the proposed critical phases can be achieved based on the current cold atom experiments. This work paves the way to observe the novel critical phases.

preprint2020arXiv

Spin wave based tunable switch between superconducting flux qubits

Quantum computing hardware has received world-wide attention and made considerable progress recently. YIG thin film have spin wave (magnon) modes with low dissipation and reliable control for quantum information processing. However, the coherent coupling between a quantum device and YIG thin film has yet been demonstrated. Here, we propose a scheme to achieve strong coupling between superconducting flux qubits and magnon modes in YIG thin film. Unlike the direct $\sqrt{N}$ enhancement factor in coupling to the Kittel mode or other spin ensembles, with N the total number of spins, an additional spatial dependent phase factor needs to be considered when the qubits are magnetically coupled with the magnon modes of finite wavelength. To avoid undesirable cancelation of coupling caused by the symmetrical boundary condition, a CoFeB thin layer is added to one side of the YIG thin film to break the symmetry. Our numerical simulation demonstrates avoided crossing and coherent transfer of quantum information between the flux qubits and the standing spin waves in YIG thin films. We show that the YIG thin film can be used as a tunable switch between two flux qubits, which have modified shape with small direct inductive coupling between them. Our results manifest that it is possible to couple flux qubits while suppressing undesirable cross-talk.

preprint2019arXiv

Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary

Defects ubiquitously exist in crystal materials and usually exhibit a very different nature than the bulk matrix, and hence, their presence can have significant impacts on the properties of devices. Although it is well accepted that the properties of defects are determined by their unique atomic environments, the precise knowledge of such relationships is far from clear for most oxides due to the complexity of defects and difficulties in characterization. Here, we fabricate a 36.8° SrRuO3 grain boundary of which the transport measurements show a spin-valve magnetoresistance. We identify its atomic arrangement, including oxygen, using scanning transmission electron microscopy and spectroscopy. Based on the as-obtained atomic structure, the density functional theory calculations suggest that the spin-valve magnetoresistance is because of the dramatically reduced magnetic moments at the boundary. The ability to manipulate magnetic properties at the nanometer scale via defect control allows new strategies to design magnetic/electronic devices with low-dimensional magnetic order.

preprint2019arXiv

Chiral spin-wave velocities induced by all-garnet interfacial Dzyaloshinskii-Moriya interaction in ultrathin yttrium iron garnet films

Spin waves can probe the Dzyaloshinskii-Moriya interaction (DMI) which gives rise to topological spin textures, such as skyrmions. However, the DMI has not yet been reported in yttrium iron garnet (YIG) with arguably the lowest damping for spin waves. In this work, we experimentally evidence the interfacial DMI in a 7~nm-thick YIG film by measuring the nonreciprocal spin wave propagation in terms of frequency, amplitude and most importantly group velocities using all electrical spin-wave spectroscopy. The velocities of propagating spin waves show chirality among three vectors, i.e. the film normal direction, applied field and spin-wave wavevector. By measuring the asymmetric group velocities, we extract a DMI constant of 16~$μ$J/m$^{2}$ which we independently confirm by Brillouin light scattering. Thickness-dependent measurements reveal that the DMI originates from the oxide interface between the YIG and garnet substrate. The interfacial DMI discovered in the ultrathin YIG films is of key importance for functional chiral magnonics as ultra-low spin-wave damping can be achieved.

preprint2019arXiv

Correlating the Electronic Structures of Metallic/Semiconductor MoTe2 Interface to its Atomic Structures

Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties and atomic structure. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit cells. The plasmonic oscillations exhibit strong angle dependence, i.e., a red-shift (approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials.

preprint2019arXiv

Magnetic Raman continuum in single crystalline H$_3$LiIr$_2$O$_6$

Recently H$_3$LiIr$_2$O$_6$ has been reported as a spin-orbital entangled quantum spin liquid (QSL) [K. Kitagawa et al., Nature {\bf 554}, 341 (2018)], albeit its connection to Kitaev QSL has not been yet identified. To unveil the related Kitaev physics, we perform the first Raman spectroscopy studies on single crystalline H$_3$LiIr$_2$O$_6$ samples. We implement a soft chemical replacement of Li$^+$ with H$^+$ from $α$-Li$_2$IrO$_3$ single crystals to synthesize the single crystal samples of the iridate second generation H$_3$LiIr$_2$O$_6$. The Raman spectroscopy can be used to diagnose the QSL state since the magnetic Raman continuum arises from a process involving pairs of fractionalized Majorana fermionic excitation in a pure Kitaev model. We observe a broad dome-shaped magnetic continuum in H$_3$LiIr$_2$O$_6$, in line with theoretical expectations for the two-spin process in the Kitaev QSL. Our results establish the close connection to the Kitaev QSL physics in H$_3$LiIr$_2$O$_6$.

preprint2016arXiv

Electrical control of intervalley scattering in graphene via the charge state of defects

We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a potential by the long-range part. Experiments on calcium-adsorbed graphene confirm the role of a long-range Coulomb potential. This effect is applicable to other multivalley systems, provided that the charge state of a defect can be electrically tuned. Our result provides a means to electrically control valley relaxation and has important implications in valley dynamics in valleytronic materials.

preprint2016arXiv

Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably enlarge the family of van der Waals heterostructures. Despite well understanding of the two individual materials, the electron transport properties of a combined vertical heterojunction are still unknown. Here we show the experimental realization of a vertical heterojunction between Bi2Se3 nanoplate and monolayer graphene. At low temperatures, the electron transport through the vertical heterojunction is dominated by the tunneling process, which can be effectively tuned by gate voltage to alter the density of states near the Fermi surface. In the presence of a magnetic field, quantum oscillations are observed due to the quantized Landau levels in both graphene and the two-dimensional surface states of Bi2Se3. Furthermore, we observe an exotic gate-tunable tunneling resistance under high magnetic field, which displays resistance maxima when the underlying graphene becomes a quantum Hall insulator.

preprint2016arXiv

Programmable graphene doping via electron beam irradiation

Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier densities. These processes, however, lead to degradation of device performance because of structural defect creation. A challenge remains to controllably dope graphene while preserving its superlative properties. Here we show a novel method for tunable and erasable doping of on-chip graphene, realized by using a focused electron beam. Our results demonstrate site-specific control of carrier type and concentration achievable by modulating the charge distribution in the dielectric substrate. Thereby, the structural integrity and electrical performance of graphene are preserved, and the doping states are rewritable. Different logic operations were thus implemented in a single graphene sheet. By extending this method to other two-dimensional materials, this work lays out a blueprint for powerful yet simple means of incorporating two-dimensional materials into prospective electronic technologies.

preprint2015arXiv

All-Metallic Vertical Transistors Based on Stacked Dirac Materials

It is a persisting pursuit to use metal as a channel material in a field effect transistor. All metallic transistor can be fabricated from pristine semimetallic Dirac materials (such as graphene, silicene, and germanene), but the on/off current ratio is very low. In a vertical heterostructure composed by two Dirac materials, the Dirac cones of the two materials survive the weak interlayer van der Waals interaction based on density functional theory method, and electron transport from the Dirac cone of one material to the one of the other material is therefore forbidden without assistance of phonon because of momentum mismatch. First-principles quantum transport simulations of the all-metallic vertical Dirac material heterostructure devices confirm the existence of a transport gap of over 0.4 eV, accompanied by a switching ratio of over 104. Such a striking behavior is robust against the relative rotation between the two Dirac materials and can be extended to twisted bilayer graphene. Therefore, all-metallic junction can be a semiconductor and novel avenue is opened up for Dirac material vertical structures in high-performance devices without opening their band gaps.

preprint2015arXiv

Monolayer Phosphorene-Metal Interfaces

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact properties of monolayer (ML) phosphorene with a series of commonly used metals (Al, Ag. Cu, Au, Cr, Ni, Ti, and Pd) via both ab initio electronic structure calculations and more reliable quantum transport simulations. Strong interactions are found between all the checked metals, with the energy band structure of ML phosphorene destroyed. In terms of the quantum transport simulations, ML phosphorene forms a n-type Schottky contact with Au, Cu, Cr, Al, and Ag electrodes, with electron Schottky barrier heights (SBHs) of 0.30, 0.34, 0.37, 0.51, and 0.52 eV, respectively, and p-type Schottky contact with Ti, Ni, and Pd electrodes, with hole SBHs of 0.30, 0.26, and 0.16 eV, respectively. These results are in good agreement with available experimental data. Our findings not only provide an insight into the ML phosphorene-metal interfaces but also help in ML phosphorene based device design.

preprint2015arXiv

Silicene Spintronics

Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate numerous researchers into the studies of spintronics in graphene and other two-dimensional (2D) materials. Silicene, silicon analog of graphene, is considered as a promising material for spintronics. Here, we present a review on the theoretical advances about the spin-dependent properties including the electric field and exchange field tunable topological properties of silicene and the corresponding spintronic device simulations.

preprint2014arXiv

Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms

Enhancement of the spin-orbit coupling in graphene may lead to various topological phenomena and also find applications in spintronics. Adatom absorption has been proposed as an effective way to achieve the goal. In particular, great hope has been held for indium in strengthening the spin-orbit coupling and realizing the quantum spin Hall effect. To search for evidence of the spin-orbit coupling in graphene absorbed with indium adatoms, we carry out extensive transport measurements, i.e., weak localization magnetoresistance, quantum Hall effect and non-local spin Hall effect. No signature of the spin-orbit coupling is found. Possible explanations are discussed.

preprint2014arXiv

Does the Dirac Cone Exist in Silicene on Metal Substrates?

Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir, Cu, Mg, Au, Pt, Al, and Ag substrates. The destroyed Dirac cone of silicene, however, can be effectively restored with linear or parabolic dispersion by intercalating alkali metal atoms between silicene and the metal substrates, offering an opportunity to study the intriguing properties of silicene without further transfer of silicene from the metal substrates.

preprint2014arXiv

Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

preprint2014arXiv

Observation of vacancy-induced suppression of electronic cooling in defected graphene

Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude suppression of electronic cooling compared with clean graphene. The effect is stronger in graphene with more vacancies, confirming its vacancy-induced nature. The dependence of the coupling constant on the phonon temperature implies its link to the dynamics of disorder. Our study highlights the effect of disorder on electron-phonon interaction in graphene. In addition, the suppression of electronic cooling holds great promise for improving the performance of graphene-based bolometer and photo-detector devices.

preprint2013arXiv

Interfacial Properties of Bilayer and Trilayer Graphene on Metal Substrates

One popular approach to prepare graphene is to grow them on transition metal substrates via chemical vapor deposition. By using the density functional theory with dispersion correction, we systematically investigate for the first time the interfacial properties of bilayer (BLG) and trilayer graphene (TLG) on metal substrates. Three categories of interfacial structures are revealed. The adsorption of B(T)LG on Al, Ag, Cu, Au, and Pt substrates is a weak physisorption, but a band gap can be opened. The adsorption of B(T)LG on Ti, Ni, and Co substrates is a strong chemisorption, and a stacking-insensitive band gap is opened for the two uncontacted layers of TLG. The adsorption of B(T)LG on Pd substrate is a weaker chemisorption, with a band gap opened for the uncontacted layers. This fundamental study also helps for B(T)LG device study due to inevitable graphene/metal contact.

preprint2013arXiv

Tailoring exciton dynamics by elastic strain-gradient in semiconductors

As device miniaturization approaches the atomic limit, it becomes highly desirable to exploit novel paradigms for tailoring electronic structures and carrier dynamics in materials. Elastic strain can in principle be applied to achieve reversible and fast control of such properties, but it remains a great challenge to create and utilize precisely controlled inhomogeneous deformation in semiconductors. Here, we take a combined experimental and theoretical approach to demonstrate that elastic strain-gradient can be created controllably and reversibly in ZnO micro/nanowires. In particular, we show that the inhomogeneous strain distribution creates an effective field that fundamentally alters the dynamics of the neutral excitons. As the basic principles behind these results are quite generic and applicable to most semiconductors, this work points to a novel route to a wide range of applications in electronics, optoelectronics, and photochemistry.

preprint2012arXiv

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.

preprint2010arXiv

Evidence for thermal spin transfer torque

Large heat currents are obtained in Co/Cu/Co spin valves positioned at the middle of Cu nanowires. The second harmonic voltage response to an applied current is used to investigate the effect of the heat current on the switching of the spin valves. Both the switching field and the magnitude of the voltage response are found to be dependent on the heat current. These effects are evidence for a thermal spin transfer torque acting on the magnetization and are accounted for by a thermodynamic model in which heat, charge and spin currents are linked by Onsager reciprocity relations.