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Xiaosong Wu

Xiaosong Wu appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conquant-phcond-mat.other

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Published work

16 published item(s)

preprint2022arXiv

Antisymmetric Seebeck effect in a tilted Weyl semimetal

Tilting the Weyl cone breaks the Lorentz invariance and enriches the Weyl physics. Here, we report the observation of a magnetic-field-antisymmetric Seebeck effect in a tilted Weyl semimetal, Co$_3$Sn$_2$S$_2$. Moreover, it is found that the Seebeck effect and the Nernst effect are antisymmetric in both the in-plane magnetic field and the magnetization. We attribute these exotic effects to the one-dimensional chiral anomaly and phase space correction due to the Berry curvature. The observation is further reproduced by a theoretical calculation, taking into account the orbital magnetization.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Asymmetric Fraunhofer pattern in Josephson junctions from heterodimensional superlattice V$_5$S$_8$

Introduction of spin-orbit coupling (SOC) in a Josephson junction (JJ) gives rise to unusual Josephson effects. We investigate JJs based on a newly discovered heterodimensional superlattice V$_5$S$_8$ with a special form of SOC. The unique homointerface of our JJs enables elimination of extrinsic effects due to interfaces and disorder. We observe asymmetric Fraunhofer patterns with respect to both the perpendicular magnetic field and the current. The asymmetry is influenced by an in-plane magnetic field. Analysis of the pattern points to a nontrivial spatial distribution of the Josephson current that is intrinsic to the SOC in V$_5$S$_8$.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Homointerface planar Josephson junction based on inverse proximity effect

The quality of a superconductor-normal metal-superconductor Josephson junction (JJ) depends crucially on the transparency of the superconductor-normal metal (S/N) interface. We demonstrate a technique for fabricating planar JJs with perfect S/N interfaces. The technique utilizes a strong inverse proximity effect discovered in Al/V$_5$S$_8$ bilayers, by which the Al layer is driven into the resistive state. The highly transparent S/N homointerface and the peculiar normal metal enable the flow of Josephson supercurrent across a 2.9 $μ$m long weak link. Moreover, our JJ exhibits a giant critical current and a large product of the critical current and the normal state resistance.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Rational design of large anomalous Nernst effect in Dirac semimetals

Anomalous Nernst effect generates a transverse voltage perpendicular to the temperature gradient. It has several advantages compared with the longitudinal thermoelectricity for energy conversion, such as decoupling of electronic and thermal transports, higher flexibility, and simpler lateral structure. However, a design principle beyond specific materials systems for obtaining a large anomalous Nernst conductivity (ANC) is still absent. In this work, we theoretically demonstrate that a pair of Dirac nodes under a Zeeman field manifests a double-peak anomalous Hall conductivity curve with respect to the chemical potential and a compensated carriers feature, leading to an enhanced ANC pinning at the Fermi level compared with that of a simple Weyl semimetal with two Weyl nodes. Based on first-principles calculations, we then provide two Dirac semimetal candidates, i.e., Na3Bi and NaTeAu, and show that under a Zeeman field they exhibit a sizable ANC value of 0.4 A/(m*K) and 1.3 A/(m*K), respectively, near the Fermi level. Our work provides a design principle with a prototype band structure for enhanced ANC pinning at Fermi level, shedding light on the inverse design of other specific functional materials base on electronic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magneto-transport evidence for strong topological insulator phase in ZrTe5

The identification of a non-trivial band topology usually relies on directly probing the protected surface/edge states. But, it is difficult to achieve electronically in narrow-gap topological materials due to the small (meV) energy scales. Here, we demonstrate that band inversion, a crucial ingredient of the non-trivial band topology, can serve as an alternative, experimentally accessible indicator. We show that an inverted band can lead to a four-fold splitting of the non-zero Landau levels, contrasting the two-fold splitting (spin splitting only) in the normal band. We confirm our predictions in magneto-transport experiments on a narrow-gap strong topological insulator, zirconium pentatelluride (ZrTe$_5$), with the observation of additional splittings in the quantum oscillations and also an anomalous peak in the extreme quantum limit. Our work establishes an effective strategy for identifying the band inversion as well as the associated topological phases for future topological materials research.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of a thermoelectric Hall plateau in the extreme quantum limit

The thermoelectric Hall effect is the generation of a transverse heat current upon applying an electric field in the presence of a magnetic field. Here we demonstrate that the thermoelectric Hall conductivity $α_{xy}$ in the three-dimensional Dirac semimetal ZrTe$_5$ acquires a robust plateau in the extreme quantum limit of magnetic field. The plateau value is independent of the field strength, disorder strength, carrier concentration, or carrier sign. We explain this plateau theoretically and show that it is a unique signature of three-dimensional Dirac or Weyl electrons in the extreme quantum limit. We further find that other thermoelectric coefficients, such as the thermopower and Nernst coefficient, are greatly enhanced over their zero-field values even at relatively low fields.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrical control of intervalley scattering in graphene via the charge state of defects

We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a potential by the long-range part. Experiments on calcium-adsorbed graphene confirm the role of a long-range Coulomb potential. This effect is applicable to other multivalley systems, provided that the charge state of a defect can be electrically tuned. Our result provides a means to electrically control valley relaxation and has important implications in valley dynamics in valleytronic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Energy gaps of atomically precise armchair graphene nanoribbons

Graphene nanoribbons (GNRs) are one-dimensional (1D) structures that exhibit a rich variety of electronic properties1-17. Therefore, they are predicted to be the building blocks in next-generation nanoelectronic devices. Theoretically, it has been demonstrated that armchair GNRs can be divided into three families, i.e., Na = 3p, Na = 3p + 1, and Na = 3p + 2 (here Na is the number of dimer lines across the ribbon width and p is an integer), according to their electronic structures, and the energy gaps for the three families are quite different even with the same p1,3-6. However, a systematic experimental verification of this fundamental prediction is still lacking, owing to very limited atomic-level control of the width of the armchair GNRs investigated7,9,10,13,17. Here, we studied electronic structures of the armchair GNRs with atomically well-defined widths ranging from Na = 6 to Na = 26 by using scanning tunnelling microscope (STM). Our result demonstrated explicitly that all the studied armchair GNRs exhibit semiconducting gaps due to quantum confinement and, more importantly, the observed gaps as a function of Na are well grouped into the three categories, as predicted by density-functional theory calculations3. Such a result indicated that we can tune the electronic properties of the armchair GNRs dramatically by simply adding or cutting one carbon dimer line along the ribbon width.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer

The wavefunction of massless Dirac fermions is a two-component spinor. In graphene, a one-atom-thick film showing two-dimensional Dirac-like electronic excitations, the two-component representation reflects the amplitude of the electron wavefunction on the A and B sublattices. This unique property provides unprecedented opportunities to image the two components of massless Dirac fermions spatially. Here we report atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer by scanning tunnelling microscopy and spectroscopy. A gap of about 20 meV, driven by inversion symmetry breaking by the substrate potential, is observed in the graphene on both SiC and graphite substrates. Such a gap splits the n = 0 Landau level (LL) into two levels, 0+ and 0-. We demonstrate that the amplitude of the wavefunction of the 0- LL is mainly at the A sites and that of the 0+ LL is mainly at the B sites of graphene, characterizing the internal structure of the spinor of the n = 0 LL. This provides direct evidence of the two-component nature of massless Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms

Enhancement of the spin-orbit coupling in graphene may lead to various topological phenomena and also find applications in spintronics. Adatom absorption has been proposed as an effective way to achieve the goal. In particular, great hope has been held for indium in strengthening the spin-orbit coupling and realizing the quantum spin Hall effect. To search for evidence of the spin-orbit coupling in graphene absorbed with indium adatoms, we carry out extensive transport measurements, i.e., weak localization magnetoresistance, quantum Hall effect and non-local spin Hall effect. No signature of the spin-orbit coupling is found. Possible explanations are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Observation of vacancy-induced suppression of electronic cooling in defected graphene

Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude suppression of electronic cooling compared with clean graphene. The effect is stronger in graphene with more vacancies, confirming its vacancy-induced nature. The dependence of the coupling constant on the phonon temperature implies its link to the dynamics of disorder. Our study highlights the effect of disorder on electron-phonon interaction in graphene. In addition, the suppression of electronic cooling holds great promise for improving the performance of graphene-based bolometer and photo-detector devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Thermoelectric effect in high mobility single layer epitaxial graphene

The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing temperature suggests that the suppression of the thermopower is intrinsic to Dirac electrons in graphene.

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preprint2010arXiv

Epitaxial Graphene Electronic Structure And Transport

Since its inception in 2001, the science and technology of epitaxial graphene on hexagonal silicon carbide has matured into a major international effort and is poised to become the first carbon electronics platform. A historical perspective is presented and the unique electronic properties of single and multilayered epitaxial graphenes on electronics grade silicon carbide are reviewed. Early results on transport and the field effect in Si-face grown graphene monolayers provided proof-of-principle demonstrations. Besides monolayer epitaxial graphene, attention is given to C-face grown multilayer graphene, which consists of electronically decoupled graphene sheets. Production, structure, and electronic structure are reviewed. The electronic properties, interrogated using a wide variety of surface, electrical and optical probes, are discussed. An overview is given of recent developments of several device prototypes including resistance standards based on epitaxial graphene quantum Hall devices and new ultrahigh frequency analog epitaxial graphene amplifiers.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Top and side gated epitaxial graphene field effect transistors

Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The channels have a Hall bar geometry to facilitate magnetoresistance measurements. FETs patterned on the Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-face FETs have lower off-to-on resistance ratios, but their mobilities (up to 5000 cm2/Vs) are much larger than that for Si-face transistors. Initial investigations into all-graphene side gate FET structures are promising.

0 citations0 reviewsNo code linkedOpen access