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Researcher profile

Daniel C. Ralph

Daniel C. Ralph contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.app-phcond-mat.str-elquant-ph

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Published work

11 published item(s)

preprint2026arXiv

Low-loss Nb on Si superconducting resonators from a dual-use spintronics deposition chamber and with acid-free post-processing

Magnetic impurities are known to degrade superconductivity. For this reason, physical vapor deposition chambers that have previously been used for magnetic materials have generally been avoided for making high-quality superconducting resonator devices. In this article, we show by example that such chambers can be used for this purpose; with Nb films sputtered in a chamber that continues to be used for magnetic materials, we demonstrate compact (\SI{3}{\micro\meter} gap) coplanar waveguide resonators with low-power internal quality factors near one million. We achieve this using a resist strip bath with no post-fabrication acid treatment, which results in performance comparable to previous strip baths with acid treatments. We also find evidence that this improved resist strip bath provides a better surface chemical template for post-fabrication hydrogen fluoride processing. These results are consistent across three Si substrate preparation methods, including a \SI{700}{\celsius} anneal. These results will inform nanofabrication for other superconducting materials and the integration of magnetic materials for hybrid systems.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Anisotropic Gigahertz Antiferromagnetic Resonances of the Easy-Axis van der Waals Antiferromagnet CrSBr

We report measurements of antiferromagnetic resonances in the van der Waals easy-axis antiferromagnet CrSBr. The interlayer exchange field and magnetocrystalline anisotropy fields are comparable to laboratory magnetic fields, allowing a rich variety of gigahertz-frequency dynamical modes to be accessed. By mapping the resonance frequencies as a function of the magnitude and angle of applied magnetic field we identify the different regimes of antiferromagnetic dynamics. The spectra show good agreement with a Landau-Lifshitz model for two antiferromagnetically-coupled sublattices, accounting for inter-layer exchange and triaxial magnetic anisotropy. Fits allow us to quantify the parameters governing the magnetic dynamics: at 5 K, the interlayer exchange field is $μ_0 H_E =$ 0.395(2) T, and the hard and intermediate-axis anisotropy parameters are $μ_0 H_c =$ 1.30(2) T and $μ_0 H_a =$ 0.383(7) T. The existence of within-plane anisotropy makes it possible to control the degree of hybridization between the antiferromagnetic resonances using an in-plane magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers

We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm3Fe5O12/Pt the ratio of the electrically-driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. We ascribe this difference to a proximity-induced magnetic layer at the Tm3Fe5O12/Pt interface.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong, Temperature-Dependent Spin-Orbit Torques in Heavy Fermion YbAl$_3$

The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated by heavy metals[2-8], interfaces with strong Rashba interactions[9,10] and topological insulators [11-14]. These families of materials can all be well-described using models with noninteracting-electron bandstructures. Here, we show that electronic interactions within a strongly correlated heavy fermion material, the Kondo lattice system YbAl$_{3}$, can provide a large enhancement in spin-orbit torque. The spin-torque conductivity increases by approximately a factor of 4 as a function of decreasing temperature from room temperature to the coherence temperature of YbAl$_{3}$ ($T^* \approx 37$ K), with a saturation at lower temperatures, achieving a maximum value greater than any heavy metal element. This temperature dependence mimics the increase and saturation at $T^*$ of the density of states at the Fermi level arising from the ytterbium 4$f$-derived heavy bands in the Kondo regime, as measured by angle-resolved photoemission spectroscopy[15]. We therefore identify the many-body Kondo resonance as the source of the large enhancement of spin-orbit torque in YbAl$_{3}$. Our observation reveals new opportunities in spin-orbit torque manipulation of magnetic memories by engineering quantum many-body states.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Anisotropic Magnon Spin Transport in Ultra-thin Spinel Ferrite Thin Films -- Evidence for Anisotropy in Exchange Stiffness

We report measurements of magnon spin transport in a spinel ferrite, magnesium aluminum ferrite $\mathrm{MgAl_{0.5}Fe_{1.5}O_4}$ (MAFO), which has a substantial in-plane four-fold magnetic anisotropy. We observe spin diffusion lengths $> 0.8$ $\mathrm{μm}$ at room temperature in 6 nm films, with spin diffusion length 30% longer along the easy axes compared to the hard axes. The sign of this difference is opposite to the effects just of anisotropy in the magnetic energy for a uniform magnetic state. We suggest instead that accounting for anisotropy in exchange stiffness is necessary to explain these results.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Separation of Artifacts from Spin-Torque Ferromagnetic Resonance Measurements of Spin-Orbit Torque for the Low-Symmetry van der Waals Semi-Metal ZrTe$_\textbf{3}$

We measure spin-orbit torque generated by exfoliated layers of the low-symmetry semi-metal ZrTe$_3$ using the spin-torque ferromagnetic resonance (ST-FMR) technique. When the ZrTe$_3$ has a thickness greater than about 10 nm, artifacts due to spin pumping and/or resonant heating can cause the standard ST-FMR analysis to overestimate the true magnitude of the torque efficiency by as much as a factor of 30, and to indicate incorrectly that the spin-orbit torque depends strongly on the ZrTe$_3$ layer thickness. Artifact-free measurements can still be achieved over a substantial thickness range by the method developed recently to detect ST-FMR signals in the Hall geometry as well as the longitudinal geometry. ZrTe$_3$/Permalloy samples generate a conventional in-plane anti-damping spin torque efficiency $ξ_{||}^{\text{DL}}$ = 0.014 $\pm$ 0.004, and an unconventional in-plane field-like torque efficiency $|ξ_{||}^{\text{FL}}|$ = 0.003 $\pm$ 0.001. The out-of-plane anti-damping torque is negligible. We suggest that artifacts similarly interfere with the standard ST-FMR analysis for other van der Waals samples thicker than about 10 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Tilted spin current generated by the collinear antiferromagnet RuO2

We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane damping-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transverse spin current even in the absence of spin-orbit coupling. This produces characteristic changes in all three components of the E induced torque vector as a function of the angle of E relative to the crystal axes, corresponding to a spin current with a well defined tilted spin orientation s approximately (but not exactly) parallel to the Neel vector, flowing perpendicular to both E and S. This angular dependence is the signature of an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic or ferromagnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of strong bulk damping-like spin-orbit torque in chemically disordered ferromagnetic single layers

Strong damping-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected τDL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel τDL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τDL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for developing single-layer-based spin-torque memory, oscillator, and logic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Transverse and Longitudinal Spin-Torque Ferromagnetic Resonance for Improved Measurements of Spin-Orbit Torques

Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pumping (SP) and heating can cause spin current or heat flows between the layers, inducing additional resonant voltage signals via the inverse spin Hall effect (ISHE) and Nernst effects (NE). In the standard ST-FMR geometry, these extra artifacts exhibit a dependence on the angle of an in-plane magnetic field that is identical to the rectification signal from the SOTs. We show experimentally that the rectification and artifact voltages can be quantified separately by measuring the ST-FMR signal transverse to the applied current (i.e., in a Hall geometry) in addition to the usual longitudinal geometry. We find that in Pt (6 nm)/CoFeB samples the contribution from the artifacts is small compared to the SOT rectification signal for CoFeB layers thinner than 6 nm, but can be significant for thicker magnetic layers. We observe a sign change in the artifact voltage as a function of CoFeB thickness that we suggest may be due to a competition between a resonant heating effect and the SP/ISHE contribution.

0 citations0 reviewsNo code linkedOpen access