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Source author record

Robert A. Buhrman

Robert A. Buhrman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

12 published item(s)

preprint2022arXiv

Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers

We compare thermal-gradient-driven transverse voltages in ferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) to corresponding electrically-driven transverse resistances at and above room temperature. We find for Tm3Fe5O12/W that the thermal and electrical effects can be explained by a common spin-current detection mechanism, the physics underlying spin Hall magnetoresistance (SMR). However, for Tm3Fe5O12/Pt the ratio of the electrically-driven transverse voltages (planar Hall signal/anomalous Hall signal) is much larger than the ratio of corresponding thermal-gradient signals, a result which is very different from expectations for a SMR-based mechanism alone. We ascribe this difference to a proximity-induced magnetic layer at the Tm3Fe5O12/Pt interface.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Interfacial Dzyaloshinskii-Moriya interaction and spin-orbit torque in Au1-xPtx/Co bilayers with varying interfacial spin-orbit coupling

The quantitative roles of the interfacial spin-orbit coupling (SOC) in Dzyaloshinskii-Moriya interaction (DMI) and dampinglike spin-orbit torque (τDL) have remained unsettled after a decade of intensive study. Here, we report a conclusive experiment evidence that, because of the critical role of the interfacial orbital hybridization, the interfacial DMI is not necessarily a linear function of the interfacial SOC, e.g. at Au1-xPtx/Co interfaces where the interfacial SOC can be tuned significantly via strongly composition (x)-dependent spin-orbit proximity effect without varying the bulk SOC and the electronegativity of the Au1-xPtx layer. We also find that τDL in the Au1-xPtx/Co bilayers varies distinctly from the interfacial SOC as a function of x, indicating no important τDL contribution from the interfacial Rashba-Edelstein effect.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of strong bulk damping-like spin-orbit torque in chemically disordered ferromagnetic single layers

Strong damping-like spin-orbit torque (τDL) has great potential for enabling ultrafast energy-efficient magnetic memories, oscillators, and logic. So far, the reported τDL exerted on a thin-film magnet must result from an externally generated spin current or from an internal non-equilibrium spin polarization in noncentrosymmetric GaMnAs single crystals. Here, we for the first time demonstrate a very strong, unexpected τDL from current flow within ferromagnetic single layers of chemically disordered, face-centered-cubic CoPt. We establish that the novel τDL is a bulk effect, with the strength per unit current density increasing monotonically with the CoPt thickness, and is insensitive to the presence or absence of spin sinks at the CoPt surfaces. This τDL most likely arises from a net transverse spin polarization associated with a strong spin Hall effect (SHE), while there is no detectable long-range asymmetry in the material. These results broaden the scope of spin-orbitronics and provide a novel avenue for developing single-layer-based spin-torque memory, oscillator, and logic technologies.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Transverse and Longitudinal Spin-Torque Ferromagnetic Resonance for Improved Measurements of Spin-Orbit Torques

Spin-torque ferromagnetic resonance (ST-FMR) is a common method used to measure spin-orbit torques (SOTs) in heavy metal/ferromagnet bilayer structures. In the course of a measurement, other resonant processes such as spin pumping (SP) and heating can cause spin current or heat flows between the layers, inducing additional resonant voltage signals via the inverse spin Hall effect (ISHE) and Nernst effects (NE). In the standard ST-FMR geometry, these extra artifacts exhibit a dependence on the angle of an in-plane magnetic field that is identical to the rectification signal from the SOTs. We show experimentally that the rectification and artifact voltages can be quantified separately by measuring the ST-FMR signal transverse to the applied current (i.e., in a Hall geometry) in addition to the usual longitudinal geometry. We find that in Pt (6 nm)/CoFeB samples the contribution from the artifacts is small compared to the SOT rectification signal for CoFeB layers thinner than 6 nm, but can be significant for thicker magnetic layers. We observe a sign change in the artifact voltage as a function of CoFeB thickness that we suggest may be due to a competition between a resonant heating effect and the SP/ISHE contribution.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Nanosecond Reversal of Three-Terminal Spin Hall Effect Memories Sustained at Cryogenic Temperatures

We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit reasonable magnetic switching and reliable current switching by as short pulses as 1 ns of $<10^{12}$ A/m$^{2}$ magnitude, exceeding the expectation from conventional macrospin model. The pulse switching bit error rates reach below $10^{-6}$ for < 10 ns pulses. Similar performance is achieved with exponentially decaying pulses expected to be delivered to the SHE-MTJ device by a nanocryotron device in parallel configuration of a realistic memory cell structure. These results suggest the viability of the SHE-MTJ structure as a cryogenic memory element for exascale superconducting computing systems.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Current Control of Magnetic Anisotropy via Stress in a Ferromagnetic Metal Waveguide

We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic anisotropy field H_k, which changes symmetrically with respect to the current direction. Numerical simulation suggests that the anisotropic stress introduced by Joule heating plays an important role in controlling H_k. These results provide new insights into current manipulation of magnetic properties and have broad implications for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect

We investigate fast-pulse switching of in-plane-magnetized magnetic tunnel junctions (MTJs) within 3-terminal devices in which spin-transfer torque is applied to the MTJ by the giant spin Hall effect. We measure reliable switching, with write error rates down to $10^{-5}$, using current pulses as short as just 2 ns in duration. This represents the fastest reliable switching reported to date for any spin-torque-driven magnetic memory geometry, and corresponds to a characteristic time scale that is significantly shorter than predicted possible within a macrospin model for in-plane MTJs subject to thermal fluctuations at room temperature. Using micromagnetic simulations, we show that in the 3-terminal spin-Hall devices the Oersted magnetic field generated by the pulse current strongly modifies the magnetic dynamics excited by the spin-Hall torque, enabling this unanticipated performance improvement. Our results suggest that in-plane MTJs controlled by Oersted-field-assisted spin-Hall torque are a promising candidate for both cache memory applications requiring high speed and for cryogenic memories requiring low write energies.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Traveling surface spin-wave resonance spectroscopy using surface acoustic waves

Coherent gigahertz-frequency surface acoustic waves (SAWs) traveling on the surface of a piezoelectric crystal can, via the magnetoelastic interaction, resonantly excite traveling spin waves in an adjacent thin-film ferromagnet. These excited spin waves, traveling with a definite in-plane wave-vector q enforced by the SAW, can be detected by measuring changes in the electro-acoustical transmission of a SAW delay line. Here, we provide a first demonstration that such measurements constitute a precise and quantitative technique for spin-wave spectroscopy, providing a means to determine both isotropic and anisotropic contributions to the spin-wave dispersion and damping. We demonstrate the effectiveness of this spectroscopic technique by measuring the spin-wave properties of a Ni thin film for a large range of wave vectors,q = 2.5 x 10^4 - 8 x 10^4 cm^(-1), over which anisotropic dipolar interactions vary from being negligible to quite significant.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A Critical Analysis of the Feasibility of Pure Strain-Actuated Giant Magnetostrictive Nanoscale Memories

Concepts for memories based on the manipulation of giant magnetostrictive nanomagnets by stress pulses have garnered recent attention due to their potential for ultra-low energy operation in the high storage density limit. Here we discuss the feasibility of making such memories in light of the fact that the Gilbert damping of such materials is typically quite high. We report the results of numerical simulations for several classes of toggle precessional and non-toggle dissipative magnetoelastic switching modes. Material candidates for each of the several classes are analyzed and forms for the anisotropy energy density and ranges of material parameters appropriate for each material class are employed. Our study indicates that the Gilbert damping as well as the anisotropy and demagnetization energies are all crucial for determining the feasibility of magnetoelastic toggle-mode precessional switching schemes. The roles of thermal stability and thermal fluctuations for stress-pulse switching of giant magnetostrictive nanomagnets are also discussed in detail and are shown to be important in the viability, design, and footprint of magnetostrictive switching schemes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhancement of the Anti-Damping Spin Torque Efficacy of Platinum by Interface Modification

We report a strong enhancement of the efficacy of the spin Hall effect (SHE) of Pt for exerting anti-damping spin torque on an adjacent ferromagnetic layer by the insertion of $\approx$ 0.5 nm layer of Hf between a Pt film and a thin, < 2 nm, Fe$_{60}$Co$_{20}$B$_{20}$ ferromagnetic layer. This enhancement is quantified by measurement of the switching current density when the ferromagnetic layer is the free electrode in a magnetic tunnel junction. The results are explained as the suppression of spin pumping through a substantial decrease in the effective spin-mixing conductance of the interface, but without a concomitant reduction of the ferromagnet\' s absorption of the SHE generated spin current.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Thickness-Dependent Magnetoelasticity and its Effects on Perpendicular Magnetic Anisotropy in Ta|CoFeB|MgO Thin Films

We report measurements of the in-plane magnetoelastic coupling in ultra-thin Ta|CoFeB|MgO layers as a function of uniaxial strain, conducted using a four-point bending apparatus. For annealed samples, we observe a strong dependence on the thickness of the CoFeB layer in the range 1.3-2.0 nm, which can be modeled as arising from a combination of effective surface and volume contributions to the magnetoelastic coupling. We point out that if similar thickness dependence exists for magnetoelastic coupling in response to biaxial strain, then the standard Néel model for the magnetic anisotropy energy acquires a term inversely proportional to the magnetic layer thickness. This contribution can significantly change the overall magnetic anisotropy, and provides a natural explanation for the strongly nonlinear dependence of magnetic anisotropy energy on magnetic layer thickness that is commonly observed for ultrathin annealed CoFeB|MgO films with perpendicular magnetic anisotropy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Time-resolved detection of spin-transfer-driven ferromagnetic resonance and spin torque measurement in magnetic tunnel junctions

Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin physics in magnetic devices and for applications. However, previous techniques have provided only indirect measures of the torque and their results to date for the bias dependence are qualitatively and quantitatively inconsistent. Here we demonstrate that spin torque in MTJs can be measured directly by using time-domain techniques to detect resonant magnetic precession in response to an oscillating spin torque. The technique is accurate in the high-bias regime relevant for applications, and because it detects directly small-angle linear-response magnetic dynamics caused by spin torque it is relatively immune to artifacts affecting competing techniques. At high bias we find that the spin torque vector differs markedly from the simple lowest-order Taylor series approximations commonly assumed.

0 citations0 reviewsNo code linkedOpen access