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Darrell G. Schlom

Darrell G. Schlom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.supr-conphysics.app-phcond-mat.otherphysics.chem-phphysics.ins-det

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Published work

36 published item(s)

preprint2026arXiv

Anisotropic magnon transport in an antiferromagnetic trilayer heterostructure: is BiFeO$_3$ an altermagnet?

Magnons provide a route to ultra-fast transport and non-destructive readout of spin-based information transfer. Here, we report magnon transport and its emergent anisotropic nature in BiFeO$_3$ layers confined between ultrathin layers of the antiferromagnet LaFeO$_3$. Due to the confined state, BiFeO$_3$ serves as an efficient magnon transmission channel as well as a magnetoelectric knob by which to control the stack by means of an electric field. We discuss the mechanism of the anisotropic spin transport based on the interaction between the antiferromagnetic order and the electric field. This allows us to manipulate and amplify the spin transport in such a confined geometry. Furthermore, lower crystal symmetric and suppression of the spin cycloid in ultrathin BiFeO$_3$ stabilizes a non-trivial antiferromagnetic state exhibiting symmetry-protected spin-split bands that provide the non-trivial sign inversion of the spin current, which is a characteristic of an altermagnet. This work provides an understanding of the anisotropic spin transport in complex antiferromagnetic heterostructures where ferroelectricity and altermagnetism coexist, paving the way for a new route to realize electric-field control of a novel state of magnetism.

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preprint2026arXiv

Topological textures and emergent altermagnetic signatures in ultrathin BiFeO3

Magnetoelectric multiferroics, materials with intrinsically coupled electric polarization and magnetic order, promise ultralow-power switching, nonvolatile memory, and energy-efficient signal transduction. Yet practical deployment demands ultrathin films down to the atomic limit, where both orders typically degrade. Maintaining both order parameters at the thinnest scales in complex oxides remains a tremendous challenge, as uncompensated bound charge drives nanoscale depolarization in most ferroelectrics, while off-stoichiometry, reduced anisotropy, and charge transfer can produce magnetic dead layers in ultrathin oxides at substrate interfaces. Here, we realize a multiferroic phase of BiFeO3 that not only sustains both order parameters at room temperature with no dead layer but also exhibits signatures of emergent altermagnetism in the four-unit-cell, ultrathin limit. First-principles calculations, spin symmetry analysis, atomic-resolution imaging, and angle-resolved magnetic imaging reveal that short-circuit electrostatic boundary conditions, together with epitaxial strain, drive a continuous second-order, thickness-driven phase transition that enables the formation of multiferroic topological textures. Moreover, the imposed boundary conditions stabilize a d-wave altermagnetic time-reversal symmetry breaking, with corresponding signatures observed in magnetic circular dichroism. Collectively, these results establish a pathway to stabilize unconventional multiferroicity at device-relevant thicknesses, reframing scaling limits for oxide electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

X-ray Nano-imaging of Defects in Thin Film Catalysts via Cluster Analysis

Functional properties of transition-metal oxides strongly depend on crystallographic defects. In transition-metal-oxide electrocatalysts such as SrIrO3 (SIO), crystallographic lattice deviations can affect ionic diffusion and adsorbate binding energies. Scanning x-ray nanodiffraction enables imaging of local structural distortions across an extended spatial region of thin samples. Line defects remain challenging to detect and localize using nanodiffraction, due to their weak diffuse scattering. Here we apply an unsupervised machine learning clustering algorithm to isolate the low-intensity diffuse scattering in as-grown and alkaline-treated thin epitaxially strained SIO films. We pinpoint the defect locations, find additional strain variation in the morphology of electrochemically cycled SIO, and interpret the defect type by analyzing the diffraction profile through clustering. Our findings demonstrate the use of a machine learning clustering algorithm for identifying and characterizing hard-to-find crystallographic defects in thin films of electrocatalysts and highlight the potential to study electrochemical reactions at defect sites in operando experiments.

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preprint2022arXiv

Atomic-scale mapping and quantification of local Ruddlesden-Popper phase variations

The Ruddlesden-Popper ($A_{n+1}B_{n}\text{O}_{3n+1}$) compounds are a highly tunable class of materials whose functional properties can be dramatically impacted by their structural phase $n$. The negligible energetic differences associated with forming a sample with a single value of $n$ versus a mixture of $n$ makes the growth of these materials difficult to control and can lead to local atomic-scale structural variation arising from small stoichiometric deviations. In this work, we present a Python analysis platform to detect, measure, and quantify the presence of different $n$-phases based on atomic-resolution scanning transmission electron microscopy (STEM) images in a statistically rigorous manner. We employ phase analysis on the 002 Bragg peak to identify horizontal Ruddlesden-Popper faults which appear as regions of high positive compressive strain within the lattice image, allowing us to quantify the local structure. Our semi-automated technique offers statistical advantages by considering effects of finite projection thickness, limited fields of view, and precise sampling rates. This method retains the real-space distribution of layer variations allowing for a spatial mapping of local $n$-phases, enabling both quantification of intergrowth occurrence as well as qualitative description of their distribution, opening the door to new insights and levels of control over a range of layered materials.

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preprint2022arXiv

Nonvolatile Electric-Field Control of Inversion Symmetry

In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when these ground states have different crystal symmetries. A key scientific and technological challenge is to stabilize and control coexistence of symmetry-distinct phases with external stimuli. Using BiFeO3 (BFO) layers confined between layers of the dielectric TbScO3 as a model system, we stabilize the mixed-phase coexistence of centrosymmetric and non-centrosymmetric BFO phases with antipolar, insulating and polar, semiconducting behavior, respectively at room temperature. Application of in-plane electric (polar) fields can both remove and introduce centrosymmetry from the system resulting in reversible, nonvolatile interconversion between the two phases. This interconversion between the centrosymmetric insulating and non-centrosymmetric semiconducting phases coincides with simultaneous changes in the non-linear optical response of over three orders of magnitude, a change in resistivity of over five orders of magnitude, and a change in the polar order. Our work establishes a materials platform allowing for novel cross-functional devices which take advantage of changes in optical, electrical, and ferroic responses.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong, Temperature-Dependent Spin-Orbit Torques in Heavy Fermion YbAl$_3$

The use of current-generated spin-orbit torques[1] to drive magnetization dynamics is under investigation to enable a new generation of non-volatile, low-power magnetic memory. Previous research has focused on spin-orbit torques generated by heavy metals[2-8], interfaces with strong Rashba interactions[9,10] and topological insulators [11-14]. These families of materials can all be well-described using models with noninteracting-electron bandstructures. Here, we show that electronic interactions within a strongly correlated heavy fermion material, the Kondo lattice system YbAl$_{3}$, can provide a large enhancement in spin-orbit torque. The spin-torque conductivity increases by approximately a factor of 4 as a function of decreasing temperature from room temperature to the coherence temperature of YbAl$_{3}$ ($T^* \approx 37$ K), with a saturation at lower temperatures, achieving a maximum value greater than any heavy metal element. This temperature dependence mimics the increase and saturation at $T^*$ of the density of states at the Fermi level arising from the ytterbium 4$f$-derived heavy bands in the Kondo regime, as measured by angle-resolved photoemission spectroscopy[15]. We therefore identify the many-body Kondo resonance as the source of the large enhancement of spin-orbit torque in YbAl$_{3}$. Our observation reveals new opportunities in spin-orbit torque manipulation of magnetic memories by engineering quantum many-body states.

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preprint2021arXiv

Tilted spin current generated by the collinear antiferromagnet RuO2

We report measurements demonstrating that when the Neel vector of the collinear antiferromagnet RuO2 is appropriately canted relative to the sample plane, the antiferromagnet generates a substantial out of plane damping-like torque. The measurements are in good accord with predictions that when an electric field, E is applied to the spin split band structure of RuO2 it can cause a strong transverse spin current even in the absence of spin-orbit coupling. This produces characteristic changes in all three components of the E induced torque vector as a function of the angle of E relative to the crystal axes, corresponding to a spin current with a well defined tilted spin orientation s approximately (but not exactly) parallel to the Neel vector, flowing perpendicular to both E and S. This angular dependence is the signature of an antiferromagnetic spin Hall effect with symmetries that are distinct from other mechanisms of spin-current generation reported in antiferromagnetic or ferromagnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Control of polymorphism during epitaxial growth of hyperferroelectric candidate LiZnSb on GaSb (111)B

A major challenge for ferroelectric devices is the depolarization field, which competes with and often destroys long-range polar order in the limit of ultrathin films. Recent theoretical predictions suggest a new class of materials, termed hyperferroelectics, that should be robust against the depolarization field and enable ferroelectricity down to the monolayer limit. Here we demonstrate the epitaxial growth of hexagonal LiZnSb, one of the hyperferroelectric candidate materials, by molecular-beam epitaxy on GaSb (111)B substrates. Due to the high volatility of all three atomic species, we find that LiZnSb can be grown in an adsorption-controlled window, using an excess zinc flux. Within this window, the desired polar hexagonal phase is stabilized with respect to a competing cubic polymorph, as revealed by X-ray diffraction and transmission electron microscopy measurements. First-principles calculations show that for moderate amounts of epitaxial strain and moderate concentrations of Li vacancies, the cubic LiZnSb phase is lower in formation energy than the hexagonal phase, but only by a few meV per formula unit. Therefore we suggest that kinetics plays a role in stabilizing the desired hexagonal phase at low temperatures. Our results provide a path towards experimentally demonstrating ferroelectricity and hyperferroelectricity in a new class of ternary intermetallic compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Correlation induced emergent charge order in metallic vanadium dioxide

Recent progress in growth and characterization of thin-film VO$_2$ has shown its electronic properties can be significantly modulated by epitaxial matching. To throw new light on the concept of `Mott engineering', we develop a symmetry-consistent approach to treat structural distortions and electronic correlations in epitaxial VO$_2$ films under strain, and compare our design with direct experimental probes. We find strong evidence for the emergence of correlation-driven charge order deep in the metallic phase, and our results indicate that exotic phases of VO$_2$ can be controlled with epitaxial stabilization.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelectric 180 degree walls are mechanically softer than the domains they separate

Domain walls are functionally different from the domains they separate, but little is known about their mechanical properties. Using scanning probe microscopy, we have measured the mechanical response of ferroelectric 180o domain walls and observed that, despite separating domains that are mechanically identical (non-ferroelastic), the walls are mechanically distinct -- softer -- compared to the domains. This effect has been observed in different ferroelectric materials (LiNbO3, BaTiO3, PbTiO3) and with different morphologies (from single crystals to thin films) so it appears to be universal. We propose a theoretical framework that explains the domain wall softening and justifies that the effect should be common to all ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain-stabilized superconductivity

Superconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the first instance of the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO$_{2}$ thin films on (110)-oriented TiO$_{2}$ substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of $d$ orbitals.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Growth of CuFeO$_2$ Single Crystals by the Optical Floating-Zone Technique

CuFeO$_2$ single crystals up to 50 mm in length and up to 10 mm in diameter were grown by the optical floating-zone method. Stoichiometric polycrystalline rods with a diameter of 6-12 mm were used as feed materials to produce crystals of sufficient size to be used as substrates for the growth of thin films of delafossites. For stable growth along the $c$-axis, low growth rates of 0.4 mm/h are necessary. Due to the incongruent melting behavior of CuFeO$_2$, a stable melt zone requires adjustment of the lamp power during growth. The melting of CuFeO$_2$ is not simply incongruent because the thermodynamic equilibrium includes more than two solid phases and the melt; the gas phase is also involved. The crystals were characterized by X-ray diffraction and X-ray fluorescence measurements.

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preprint2019arXiv

Non-thermal fluence threshold for femtosecond pulsed x-ray radiation damage in perovskite complex oxide epitaxial heterostructures

Intense hard x-ray pulses from a free-electron laser induce irreversible structural damage in a perovskite oxide epitaxial heterostructure when pulse fluences exceed a threshold value. The intensity of x-ray diffraction from a 25-nm thick epitaxial BiFeO$_{3}$ layer on a SrTiO$_{3}$ substrate measured using a series of pulses decreases abruptly with a per-pulse fluence of 2.7 x 10$^{6}$ photons $μ$m$^{-2}$ at 9.7 keV photon energy, but remains constant for 1.3 x 10$^{6}$ photons $μ$m$^{-2}$ or less. The damage resulted in the destruction of the BiFeO$_{3}$ thin film within the focal spot area and the formation of a deep cavity penetrating into the STO substrate via the removal of tens of nanometers of material per pulse. The damage threshold occurs at a fluence that is insufficient to heat the absorption volume to the melting point. The morphology of the ablated sample is consistent with fracture rather than melting. Together these results indicate that the damage occurs via a non-thermal process consistent with ultrafast ionization of the absorption volume.

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preprint2019arXiv

Realization of Epitaxial Thin Films of the Topological Crystalline Insulator Sr$_3$SnO

Topological materials are derived from the interplay between symmetry and topology. Advances in topological band theories have led to the prediction that the antiperovskite oxide Sr$_3$SnO is a topological crystalline insulator, a new electronic phase of matter where the conductivity in its (001) crystallographic planes is protected by crystallographic point group symmetries. Realization of this material, however, is challenging. Guided by thermodynamic calculations we design and implement a deposition approach to achieve the adsorption-controlled growth of epitaxial Sr$_3$SnO single-crystal films by molecular-beam epitaxy (MBE). In-situ transport and angle-resolved photoemission spectroscopy measurements reveal the metallic and non-trivial topological nature of the as-grown samples. Compared with conventional MBE, the synthesis route used results in superior sample quality and is readily adapted to other topological systems with antiperovskite structures. The successful realization of thin films of topological crystalline insulators opens opportunities to manipulate topological states by tuning symmetries via epitaxial strain and heterostructuring.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Epitaxial growth and electronic properties of mixed valence YbAl3 thin films

We report the growth of thin films of the mixed valence compound YbAl$_{3}$ on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction, in situ low-energy electron diffraction and aberration-corrected scanning transmission electron microscopy we establish that the films are ordered in the bulk as well as at the surface. Our films show a coherence temperature of 37 K, comparable to that reported for bulk single crystals. Photoelectron spectroscopy reveals contributions from both $\textit{f}^{13}$ and $\textit{f}^{12}$ final states establishing that YbAl$_{3}$ is a mixed valence compound and shows the presence of a Kondo Resonance peak near the Fermi-level.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Manipulating superconductivity in ruthenates through Fermi surface engineering

The key challenge in superconductivity research is to go beyond the historical mode of discovery-driven research. We put forth a new strategy, which is to combine theoretical developments in the weak-coupling renormalization group approach with the experimental developments in lattice strain driven Fermi surface-engineering. For concreteness we theoretically investigate how superconducting tendencies will be affected by strain engineering of ruthenates' Fermi surface. We first demonstrate that our approach qualitatively reproduces recent experiments under uniaxial strain. We then note that order few $\%$ strain readily accessible to epitaxial thin films, can bring the Fermi surface close to van Hove singularity. Using the experimental observation of the change in the Fermi surface under biaxial epitaxial strain and ab-initio calculations, we predict ${\rm T}_{\rm c}$ for triplet pairing to be maximized by getting close to the van Hove singularities without tuning on to the singularity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O

Chemical substitution plays a key role in controlling the electronic and magnetic properties of complex materials. For instance, in EuO, carrier doping can induce a spin-polarized metallic state, colossal magnetoresistance, and significantly enhance the Curie temperature. Here, we employ a combination of molecular-beam epitaxy, angle-resolved photoemission spectroscopy, and an effective model calculation to investigate and understand how semi-localized states evolve in lightly electron doped Eu$_{1-x}$Gd$_{x}$O above the ferromagnetic Curie temperature. Our studies reveal a characteristic length scale for the spatial extent of the donor wavefunctions which remains constant as a function of doping, consistent with recent tunneling studies of doped EuO. Our work sheds light on the nature of the semiconductor-to-metal transition in Eu$_{1-x}$Gd$_{x}$O and should be generally applicable for doped complex oxides.

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preprint2015arXiv

Doping evolution and polar surface reconstruction of the infinite-layer cuprate Sr$_{1-x}$La$_{x}$CuO$_{2}$

We use angle-resolved photoemission spectroscopy to study the doping evolution of infinite-layer Sr$_{1-x}$La$_{x}$CuO$_{2}$ thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of the superconducting cuprate parent compounds. As carriers are added to the system, a continuous evolution from charge-transfer insulator to superconductor is observed, with the initial lower Hubbard band pinned well below the Fermi level and the development of a coherent low-energy band with electron doping. This two-component spectral function emphasizes the important role that strong local correlations play even at relatively high doping levels. Electron diffraction probes reveal a ${p(2\times2)}$ surface reconstruction of the material at low doping levels. Using a number of simple assumptions, we develop a model of this reconstruction based on the polar nature of the infinite-layer structure. Finally, we provide evidence for a thickness-controlled transition in ultrathin films of SrCuO$_2$ grown on nonpolar SrTiO$_3$, highlighting the diverse structural changes that can occur in polar complex oxide thin films.

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preprint2015arXiv

Giant optical enhancement of strain gradient in ferroelectric thin films and its physics origin

The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the strain gradient with magnitudes far exceeding those achievable via mechanical deformation (~10 $m^{-1}$) is needed. Strain-engineered thin films exhibit extraordinary strain gradients of $10^5-10^6 m{-1}$ arising from structural relaxation within a short space range that greatly enhances the steady-state flexoelectric effect. Here we report a giant, optically initiated dynamic enhancement of the strain gradient, also on the order of $10^5 -10^6 m^{-1}$, in ferroelectric BiFeO3 epitaxial thin films via time-dependent coherence analysis of X-ray diffractions. The finding opens the door for dynamic coupling of the flexoelectric effect with light, making optical switching of polarization, and thus application such as direct optical writing of non-volatile ferroelectric memory, possible. A combination of time-resolved X-ray scattering and optical spectroscopy shows that the enhancement of the strain gradient is due to a piezoelectric effect driven by a transient screening electric field, opening the opportunity for new ways of studying flexoelectric effect in strain engineered ferroelectric thin films.

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preprint2015arXiv

High Dynamic Range Pixel Array Detector for Scanning Transmission Electron Microscopy

We describe a hybrid pixel array detector (EMPAD - electron microscope pixel array detector) adapted for use in electron microscope applications, especially as a universal detector for scanning transmission electron microscopy. The 128 x 128 pixel detector consists of a 500 um thick silicon diode array bump-bonded pixel-by-pixel to an application-specific integrated circuit (ASIC). The in-pixel circuitry provides a 1,000,000:1 dynamic range within a single frame, allowing the direct electron beam to be imaged while still maintaining single electron sensitivity. A 1.1 kHz framing rate enables rapid data collection and minimizes sample drift distortions while scanning. By capturing the entire unsaturated diffraction pattern in scanning mode, one can simultaneously capture bright field, dark field, and phase contrast information, as well as being able to analyze the full scattering distribution, allowing true center of mass imaging. The scattering is recorded on an absolute scale, so that information such as local sample thickness can be directly determined. This paper describes the detector architecture, data acquisition (DAQ) system, and preliminary results from experiments with 80 to 200 keV electron beams.

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preprint2015arXiv

Structure of the photo-catalytically active surface of SrTiO3

A major goal of energy research is to use visible light to cleave water directly, without an applied voltage, into hydrogen and oxygen. Since the initial reports of the ultraviolet (UV) activity of TiO2 and SrTiO3 in the 1970s, researchers have pursued a fundamental understanding of the mechanistic and molecular-level phenomena involved in photo-catalysis. Although it requires UV light, after four decades SrTiO3 is still the gold standard for splitting water. It is chemically stable and catalyzes both the hydrogen and the oxygen reactions without applied bias. While ultrahigh vacuum (UHV) surface science techniques have provided useful insights, we still know relatively little about the structure of electrodes in contact with electrolytes under operating conditions. Here, we report the surface structure evolution of a SrTiO3 electrode during water splitting, before and after training with a positive bias. Operando high-energy X-ray reflectivity measurements demonstrate that training the electrode irreversibly reorders the surface. Scanning electrochemical microscopy (SECM) at open circuit correlates this training with a tripling of the activity toward photo-induced water splitting. A novel first-principles joint density-functional theory (JDFT) simulation constrained to the X-ray data via a generalized penalty function identifies an anatase-like structure for the more active, trained surface.

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preprint2014arXiv

Atomically precise interfaces from non-stoichiometric deposition

Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth, but here we show that the most precise control is obtained for non-stoichiometric growth where differing surface energies can be compensated by surfactant-like effects. For the precise growth of Sr$_{n+1}$Ti$_n$O$_{3n+1}$ Ruddlesden-Popper (RP) phases, stoichiometric deposition leads to the loss of the first RP rock-salt double layer, but growing with a strontium-rich surface layer restores the bulk stoichiometry and ordering of the subsurface RP structure. Our results dramatically expand the materials that can be prepared in epitaxial heterostructures with precise interface control---from just the $n=\infty$ end members (perovskites) to the entire RP family---enabling the exploration of novel quantum phenomena at a richer variety of oxide interfaces.

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preprint2014arXiv

Magnetic Structure and Ordering of Multiferroic Hexagonal LuFeO3

We report on the magnetic structure and ordering of hexagonal LuFeO3 films grown by molecular-beam epitaxy (MBE) on YSZ (111) and Al2O3 (0001) substrates. Using a set of complementary probes including neutron diffraction, we find that the system magnetically orders into a ferromagnetically-canted antiferromagnetic state via a single transition between 138-155 K, while a paraelectric to ferroelectric transition occurs above 1000 K. The symmetry of the magnetic structure in the ferroelectric state implies that this material is a strong candidate for linear magnetoelectric coupling and control of the ferromagnetic moment directly by an electric field.

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preprint2013arXiv

Hetero-epitaxial EuO Interfaces Studied by Analytic Electron Microscopy

With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO|Si and EuO|YAlO3 interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering.

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preprint2013arXiv

Quantum many-body interactions in digital oxide superlattices

Controlling the electronic properties of interfaces has enormous scientific and technological implications and has been recently extended from semiconductors to complex oxides which host emergent ground states not present in the parent materials. These oxide interfaces present a fundamentally new opportunity where, instead of conventional bandgap engineering, the electronic and magnetic properties can be optimized by engineering quantum many-body interactions. We utilize an integrated oxide molecular-beam epitaxy and angle-resolved photoemission spectroscopy system to synthesize and investigate the electronic structure of superlattices of the Mott insulator LaMnO3 and the band insulator SrMnO3. By digitally varying the separation between interfaces in (LaMnO3)2n/(SrMnO3)n superlattices with atomic-layer precision, we demonstrate that quantum many-body interactions are enhanced, driving the electronic states from a ferromagnetic polaronic metal to a pseudogapped insulating ground state. This work demonstrates how many-body interactions can be engineered at correlated oxide interfaces, an important prerequisite to exploiting such effects in novel electronics.

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preprint2013arXiv

Structural and Electronic Recovery Pathways of a Photoexcited Ultrathin VO2 Film

The structural and electronic recovery pathways of a photoexcited ultrathin VO2 film at nanosecond time scales have been studied using time-resolved x-ray diffraction and transient optical absorption techniques. The recovery pathways from the tetragonal metallic phase to the monoclinic insulating phase are highly dependent on the optical pump fluence. At pump fluences higher than the saturation fluence of 14.7 mJ/cm2, we observed a transient structural state with lattice parameter larger than that of the tetragonal phase, which is decoupled from the metal-to-insulator phase transition. Subsequently, the photoexcited VO2 film recovered to the ground state at characteristic times dependent upon the pump fluence, as a result of heat transport from the film to the substrate. We present a procedure to measure the time-resolved film temperature by correlating photoexcited and temperature-dependent x-ray diffraction measurements. A thermal transport model that incorporates changes of the thermal parameters across the phase transition reproduces the observed recovery dynamics. The optical excitation and fast recovery of ultrathin VO2 films provides a practical method to reversibly switch between the monoclinic insulating and tetragonal metallic state at nanosecond time scales.

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preprint2013arXiv

Tuning the Ultrafast Spin Dynamics in Carrier-Density-Controlled Ferromagnets

Ultrafast strengthening or quenching of the ferromagnetic order of semiconducting Eu1-xGdxO was achieved by resonant photoexcitation. The modification of the magnetic order is established within 3 ps as revealed by optical second harmonic generation. A theoretical analysis shows that the response is determined by the interplay of chemically and optically generated carriers in a nonequilibrium scenario beyond the three-temperature model. General criteria for the design of spintronics materials with tunable ultrafast spin dynamics are given.

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preprint2012arXiv

Giant third-order magneto-optical rotation in ferromagnetic EuO

A magnetization-induced rotation in the third-order nonlinear optical response is observed in out-of-plane-magnetized epitaxial EuO films. We discuss the relation of this nonlinear magneto-optical rotation to the linear Faraday rotation. It is allowed in all materials but, in contrast to the linear Faraday rotation, not affected by the reduction of the thickness of the material. Thus, the third-order magneto-optical rotation is particularly suitable for probing the magnetization of functional magnetic materials such as ultra-thin films and multilayers.

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preprint2012arXiv

Nodeless superconductivity arising from strong (pi,pi) antiferromagnetism in the infinite-layer electron-doped cuprate Sr1-xLaxCuO2

The asymmetry between electron and hole doping remains one of the central issues in high-temperature cuprate superconductivity, but our understanding of the electron-doped cuprates has been hampered by apparent discrepancies between the only two known families: Re2-xCexCuO4 and A1-xLaxCuO2. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized films of Sr1-xLaxCuO2 synthesized by oxide molecular-beam epitaxy. Our results reveal a strong coupling between electrons and (pi,pi) antiferromagnetism that induces a Fermi surface reconstruction which pushes the nodal states below the Fermi level. This removes the hole pocket near (pi/2,pi/2), realizing nodeless superconductivity without requiring a change in the symmetry of the order parameter and providing a universal understanding of all electron-doped cuprates.

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preprint2012arXiv

Polar phonon anomalies in single crystalline TbScO3

Polarized infrared reflectivity spectra of a (110)-oriented TbScO3 single crystal plate were measured down to 10 K. The number of observed polar phonons active along the crystallographic c axis at low temperatures is much higher than predicted by factor-group analysis for the orthorhombic Pbnm space group. Moreover, the lowest frequency phonons active in E||c as well as in E||[1-10] polarized spectra exhibit dramatic softening tending to a lattice instability at low temperatures. The dielectric permittivity at microwave frequencies does not show any ferroelectric-like anomaly, but the dielectric loss exhibits a maximum at 100 K. The origin of the discrepancy between the number of predicted and observed polar phonons as well as the tendency toward lattice instability are discussed. Magnetic measurements reveal an antiferromagnetic phase transition near 3 K.

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preprint2010arXiv

Coherent soft-mode phonon generation and detection in ultrathin SrTiO3 grown directly on silicon

Time-resolved two color pump-probe polarization spectroscopy was performed at room temperature on SrTiO3 films grown directly on Si with film thickness varying from 2 nm to 7.8 nm. The E soft mode with a characteristic frequency of 0.2 THz is impulsively generated and measured in these coherently strained tetragonal phase SrTiO3 thin films. Another over-damped signal observed indicates the possible relaxational hopping of Ti ion between double potential wells. The dependence of the coherent phonon signal on pump and probe laser polarization helps to identify the phonon modes.

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preprint2010arXiv

Electron-Hole Liquids in Transition Metal Oxide Heterostructures

Appropriately designed transition metal oxide heterostructures involving small band gap Mott insulators are argued to support spatially separated electron and hole gasses at equilibrium. Spatial separations and carrier densities favoring the formation of excitonic states are achievable. The excitonic states may exhibit potentially novel properties. Energetic estimates are given, candidate material systems are discussed, and the possibility of large photvoltaic effects is mentioned

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preprint2010arXiv

Localized microwave resonances in strained SrTiO3 thin films

The frequency-dependent polar dynamics of strained SrTiO3 films grown on DyScO3 are investigated using time-resolved confocal scanning optical microscopy. Microwave frequency electric fields are synchronized with a mode-locked laser and applied in-plane to the sample, while the temporal response is probed optically. Local spectroscopic information is obtained with <1 um spatial resolution over the frequency range 2-4 GHz. Investigation of the SrTiO3/DyScO3 system reveals resonances that are localized both in space and in frequency.

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preprint2010arXiv

Si-compatible candidates for high-K dielectrics with the Pbnm perovskite structure

We analyze both experimentally (where possible) and theoretically from first-principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-K dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared-active. We find that CaZrO_3, SrZrO_3, LaHoO_3, and LaYO_3 are among the most promising candidates for high-K dielectrics among the compounds we considered.

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