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Daniel Bedau

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Published work

9 published item(s)

preprint2022arXiv

Fabrication of highly resistive NiO thin films for nanoelectronic applications

Thin films of the prototypical charge transfer insulator NiO appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging however, and mostly a p-type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the film properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.

preprint2020arXiv

Non-Volatile Memory Array Based Quantization- and Noise-Resilient LSTM Neural Networks

In cloud and edge computing models, it is important that compute devices at the edge be as power efficient as possible. Long short-term memory (LSTM) neural networks have been widely used for natural language processing, time series prediction and many other sequential data tasks. Thus, for these applications there is increasing need for low-power accelerators for LSTM model inference at the edge. In order to reduce power dissipation due to data transfers within inference devices, there has been significant interest in accelerating vector-matrix multiplication (VMM) operations using non-volatile memory (NVM) weight arrays. In NVM array-based hardware, reduced bit-widths also significantly increases the power efficiency. In this paper, we focus on the application of quantization-aware training algorithm to LSTM models, and the benefits these models bring in terms of resilience against both quantization error and analog device noise. We have shown that only 4-bit NVM weights and 4-bit ADC/DACs are needed to produce equivalent LSTM network performance as floating-point baseline. Reasonable levels of ADC quantization noise and weight noise can be naturally tolerated within our NVMbased quantized LSTM network. Benchmark analysis of our proposed LSTM accelerator for inference has shown at least 2.4x better computing efficiency and 40x higher area efficiency than traditional digital approaches (GPU, FPGA, and ASIC). Some other novel approaches based on NVM promise to deliver higher computing efficiency (up to 4.7x) but require larger arrays with potential higher error rates.

preprint2016arXiv

Template-Assisted Direct Growth of 1Td/in$^2$ Bit Patterned Media

We present a method for growing bit patterned magnetic recording media using directed growth of sputtered granular perpendicular magnetic recording media. The grain nucleation is templated using an epitaxial seed layer which contains Pt pillars separated by amorphous metal oxide. The scheme enables the creation of both templated data and servo regions suitable for high density hard disk drive operation. We illustrate the importance of using a process that is both topographically and chemically driven to achieve high quality media.

preprint2013arXiv

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration.

preprint2013arXiv

Thermally assisted current-induced magnetization reversal in SrRuO3

We inject a sequence of 1 ms current pulses into uniformly magnetized patterns of the itinerant ferromagnet SrRuO3 until a magnetization reversal is detected. We detect the effective temperature during the pulse and find that the cumulative pulse time required to induce magnetization reversal depends exponentially on 1/T. In addition, we find that the cumulative pulse time also depends exponentially on the current amplitude. These observations indicate current-induced magnetization reversal assisted by thermal fluctuations.

preprint2012arXiv

Audio Cards for High-Resolution and Economical Electronic Transport Studies

We report on a technique for determining electronic transport properties using commercially available audio cards. Using a typical 24-bit audio card simultaneously as a sine wave generator and a narrow bandwidth ac voltmeter, we show the spectral purity of the analog-to-digital and digital-to-analog conversion stages, including an effective number of bits greater than 16 and dynamic range better than 110 dB. We present two circuits for transport studies using audio cards: a basic circuit using the analog input to sense the voltage generated across a device due to the signal generated simultaneously by the analog output; and a digitally-compensated bridge to compensate for nonlinear behavior of low impedance devices. The basic circuit also functions as a high performance digital lock-in amplifier. We demonstrate the application of an audio card for studying the transport properties of spin-valve nanopillars, a two-terminal device that exhibits Giant Magnetoresistance (GMR) and whose nominal impedance can be switched between two levels by applied magnetic fields and by currents applied by the audio card.

preprint2012arXiv

Current-induced magnetization reversal in SrRuO3

We inject current pulses into uniformly magnetized patterns of thin films of the itinerant ferromagnet SrRuO3, while monitoring the effective temperature of the patterns during the current injection. We gradually increase the amplitude of the pulses until magnetization reversal occurs. We observe magnetization reversal induced by current above a temperature-dependent threshold and show that this effect is not simply due to sample heating or Oersted fields. We discuss the applicability of the current-induced spin-wave instability scenario.

preprint2011arXiv

Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field

We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpoint of the pillar cross-section along the ellipse long axis. These results have important implications for the thermal stability of perpendicular magnetized MRAM bit cells.

preprint2010arXiv

Stability of 2pi domain walls in ferromagnetic nanorings

The stability of 2pi domain walls in ferromagnetic nanorings is investigated via calculation of the minimum energy path that separates a 2pi domain wall from the vortex state of a ferromagnetic nanoring. Trapped domains are stable when they exist between certain types of transverse domain walls, i.e., walls in which the edge defects on the same side of the magnetic strip have equal sign and thus repel. Here the energy barriers between these configurations and vortex magnetization states are obtained using the string method. Due to the geometry of a ring, two types of 2pi walls must be distinguished that differ by their overall topological index and exchange energy. The minimum energy path corresponds to the expulsion of a vortex. The energy barrier for annihilation of a 2pi wall is compared to the activation energy for transitions between the two ring vortex states.