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Dane Morgan

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Published work

27 published item(s)

preprint2022arXiv

Compositional Trends in Surface Enhanced Diffusion in Lead Silicate Glasses

In this work, we use molecular dynamics simulations to study the enhancement of surface over bulk diffusion (surface enhanced diffusion) in (PbO)x(SiO2)1-x glasses. This work is motivated to better understand surface diffusion in glasses and its connection to fragility, and to enhance surface diffusion in silica and related glasses for greater thermodynamic stability during vapor-deposition. By adding PbO to silica, the fragility of glass increases continuously for 10% <= x <= 70% during experiments. The increase in fragility may correspond to an increase in surface enhanced diffusion, as fragility and surface diffusion are correlated. We observe that for the silicates investigated, while surface enhanced diffusion increases with fragility, the enhancement is quite small. The slower diffusing Si and O atoms have higher enhancements, which could allow for some surface stabilization effects. We demonstrate that there are only small changes in atomic arrangements, consistent with the similar diffusion rates, at the surface as compared to bulk. Finally, we examine the trend of bulk versus surface diffusion in view of previous observations in organic and metallic glasses and found that in oxides, fragility increase may not be strongly linked to enhanced surface diffusion.

preprint2022arXiv

Machine learning for impurity charge-state transition levels in semiconductors from elemental properties using multi-fidelity datasets

Quantifying charge-state transition energy levels of impurities in semiconductors is critical to understanding and engineering their optoelectronic properties for applications ranging from solar photovoltaics to infrared lasers. While these transition levels can be measured and calculated accurately, such efforts are time-consuming and more rapid prediction methods would be beneficial. Here, we significantly reduce the time typically required to predict impurity transition levels using multi-fidelity datasets and a machine learning approach employing features based on elemental properties and impurity positions. We use transition levels obtained from low-fidelity (i.e., local-density approximation or generalized gradient approximation) density functional theory (DFT) calculations, corrected using a recently proposed modified band alignment scheme, which well-approximates transition levels from high-fidelity DFT (i.e., hybrid HSE06). The model fit to the large multi-fidelity database shows improved accuracy compared to the models trained on the more limited high-fidelity values. Crucially, in our approach, when using the multi-fidelity data, high-fidelity values are not required for model training, significantly reducing the computational cost required for training the model. Our machine learning model of transition levels has a root mean squared (mean absolute) error of 0.36 (0.27) eV vs high-fidelity hybrid functional values when averaged over 14 semiconductor systems from the II-VI and III-V families. As a guide for use on other systems, we assessed the model on simulated data to show the expected accuracy level as a function of bandgap for new materials of interest. Finally, we use the model to predict a complete space of impurity charge-state transition levels in all zinc blende III-V and II-VI systems.

preprint2022arXiv

Materials Swelling Revealed Through Automated Semantic Segmentation of Cavities in Electron Microscopy Images

Accurately quantifying swelling of alloys that have undergone irradiation is essential for understanding alloy performance in a nuclear reactor and critical for the safe and reliable operation of reactor facilities. However, typical practice is for radiation-induced defects in electron microscopy images of alloys to be manually quantified by domain-expert researchers. Here, we employ an end-to-end deep learning approach using the Mask Regional Convolutional Neural Network (Mask R-CNN) model to detect and quantify nanoscale cavities in irradiated alloys. We have assembled the largest database of labeled cavity images to date, which includes 400 images, >34k discrete cavities, and numerous alloy compositions and irradiation conditions. We have evaluated both statistical (precision, recall, and F1 scores) and materials property-centric (cavity size, density, and swelling) metrics of model performance, and performed in-depth analysis of materials swelling assessments. We find our model gives assessments of material swelling with an average (standard deviation) swelling mean absolute error based on random leave-out cross-validation of 0.30 (0.03) percent swelling. This result demonstrates our approach can accurately provide swelling metrics on a per-image and per-condition basis, which can provide helpful insight into material design (e.g., alloy refinement) and impact of service conditions (e.g., temperature, irradiation dose) on swelling. Finally, we find there are cases of test images with poor statistical metrics, but small errors in swelling, pointing to the need for moving beyond traditional classification-based metrics to evaluate object detection models in the context of materials domain applications.

preprint2022arXiv

Understanding the fragile-to-strong transition in silica from microscopic dynamics

In this work, we revisit the fragile-to-strong transition (FTS) in the simulated BKS silica from the perspective of microscopic dynamics in an effort to elucidate the dynamical behaviors of fragile and strong glass-forming liquids. Softness, which is a machine-learned feature from local atomic structures, is used to predict the microscopic activation energetics and long-term dynamics. The FTS is found to originate from a change in the temperature dependence of the microscopic activation energetics. Furthermore, results suggest there are two diffusion channels with different energy barriers in BKS silica. The fast dynamics at high temperatures is dominated by the channel with small energy barriers ($<\sim$1 eV), which is controlled by the short-range order. The rapid closing of this diffusion channel when lowering temperature leads to the fragile behavior. On the other hand, the slow dynamics at low temperatures is dominated by the channel with large energy barriers controlled by the medium-range order. This slow diffusion channel changes only subtly with temperature, leading to the strong behavior. The distributions of barriers in the two channels show different temperature dependences, causing a crossover at $\sim$3100 K. This transition temperature in microscopic dynamics is consistent with the inflection point in the configurational entropy, suggesting there is a fundamental correlation between microscopic dynamics and thermodynamics.

preprint2020arXiv

Assessing Graph-based Deep Learning Models for Predicting Flash Point

Flash points of organic molecules play an important role in preventing flammability hazards and large databases of measured values exist, although millions of compounds remain unmeasured. To rapidly extend existing data to new compounds many researchers have used quantitative structure-property relationship (QSPR) analysis to effectively predict flash points. In recent years graph-based deep learning (GBDL) has emerged as a powerful alternative method to traditional QSPR. In this paper, GBDL models were implemented in predicting flash point for the first time. We assessed the performance of two GBDL models, message-passing neural network (MPNN) and graph convolutional neural network (GCNN), by comparing methods. Our result shows that MPNN both outperforms GCNN and yields slightly worse but comparable performance with previous QSPR studies. The average R2 and Mean Absolute Error (MAE) scores of MPNN are, respectively, 2.3% lower and 2.0 K higher than previous comparable studies. To further explore GBDL models, we collected the largest flash point dataset to date, which contains 10575 unique molecules. The optimized MPNN gives a test data R2 of 0.803 and MAE of 17.8 K on the complete dataset. We also extracted 5 datasets from our integrated dataset based on molecular types (acids, organometallics, organogermaniums, organosilicons, and organotins) and explore the quality of the model in these classes.against 12 previous QSPR studies using more traditional

preprint2020arXiv

Opportunities and Challenges for Machine Learning in Materials Science

Advances in machine learning have impacted myriad areas of materials science, ranging from the discovery of novel materials to the improvement of molecular simulations, with likely many more important developments to come. Given the rapid changes in this field, it is challenging to understand both the breadth of opportunities as well as best practices for their use. In this review, we address aspects of both problems by providing an overview of the areas where machine learning has recently had significant impact in materials science, and then provide a more detailed discussion on determining the accuracy and domain of applicability of some common types of machine learning models. Finally, we discuss some opportunities and challenges for the materials community to fully utilize the capabilities of machine learning.

preprint2019arXiv

The Materials Simulation Toolkit for Machine Learning (MAST-ML): an automated open source toolkit to accelerate data-driven materials research

As data science and machine learning methods are taking on an increasingly important role in the materials research community, there is a need for the development of machine learning software tools that are easy to use (even for nonexperts with no programming ability), provide flexible access to the most important algorithms, and codify best practices of machine learning model development and evaluation. Here, we introduce the Materials Simulation Toolkit for Machine Learning (MAST-ML), an open source Python-based software package designed to broaden and accelerate the use of machine learning in materials science research. MAST-ML provides predefined routines for many input setup, model fitting, and post-analysis tasks, as well as a simple structure for executing a multi-step machine learning model workflow. In this paper, we describe how MAST-ML is used to streamline and accelerate the execution of machine learning problems. We walk through how to acquire and run MAST-ML, demonstrate how to execute different components of a supervised machine learning workflow via a customized input file, and showcase a number of features and analyses conducted automatically during a MAST-ML run. Further, we demonstrate the utility of MAST-ML by showcasing examples of recent materials informatics studies which used MAST-ML to formulate and evaluate various machine learning models for an array of materials applications. Finally, we lay out a vision of how MAST-ML, together with complementary software packages and emerging cyberinfrastructure, can advance the rapidly growing field of materials informatics, with a focus on producing machine learning models easily, reproducibly, and in a manner that facilitates model evolution and improvement in the future.

preprint2018arXiv

Combined ab initio and empirical model of the thermal conductivity of uranium, uranium-zirconium, and uranium-molybdenum

In this work we developed a practical and general modeling approach for thermal conductivity of metals and metal alloys that integrates ab initio and semiempirical physics-based models to maximize the strengths of both techniques. The approach supports creation of highly accurate, mechanistic, and extensible thermal conductivity modeling of alloys. The model was demonstrated on α-U and U-rich U-Zr and U-Mo alloys, which are potential fuels for advanced nuclear reactors. The safe use of U-based fuels requires quantitative understanding of thermal transport characteristics of the fuel. The model incorporated both phonon and electron contributions, displayed good agreement with experimental data over a wide temperature range, and provided insight into the different physical factors that govern the thermal conductivity under different temperatures. This model is general enough to incorporate more complex effects like additional alloying species, defects, transmutation products, and noble gas bubbles to predict the behavior of complex metallic alloys like U-alloy fuel systems under burnup.

preprint2016arXiv

Accelerated atomistic simulation study on the stability and mobility of carbon tri-interstitial cluster in cubic SiC

Using a combination of kinetic Activation Relaxation Technique with empirical potential and ab initio based climbing image nudged elastic band method, we perform an extensive search of the migration and rotation paths of the most stable carbon tri-interstitial cluster in cubic SiC. Our research reveals paths with the lowest energy barriers to migration, rotation, and dissociation of the most stable cluster. The kinetic properties of the most stable cluster, including its mobility, rotation behavior at different temperatures and stability against high temperature annealing, are discussed based on the calculated transition barriers. In addition to fundamental insights, our study provides a methodology for investigation of other extended defects in a technologically important material.

preprint2016arXiv

Ag diffusion in SiC high-energy grain boundaries: kinetic Monte Carlo study with first-principle calculations

The diffusion of silver (Ag) impurities in high energy grain boundaries (HEGBs) of cubic (3C) silicon carbide (SiC) is studied using an ab initio based kinetic Monte Carlo (kMC) model. This study assesses the hypothesis that the HEGB diffusion is responsible for Ag release in Tristructural-Isotropic fuel particles, and provides a specific example to increase understanding of impurity diffusion in highly disordered grain boundaries. The HEGB environment was modeled by an amorphous SiC. The structure and stability of Ag defects were calculated using density functional theory code. The defect energetics suggested that the fastest diffusion takes place via an interstitial mechanism in a-SiC. The formation energy of Ag interstitials and the kinetic resolved activation energies between them were well approximated with Gaussian distributions that were then sampled in the kMC. The diffusion of Ag was simulated with the effective medium model using kMC. At 1200-1600C, Ag in a HEGB is predicted to exhibit an Arrhenius type diffusion and with a diffusion prefactor and effective activation energy of (2.73+-1.09)*10-10 m2s-1 and 2.79+-0.18 eV, respectively. The comparison between HEGB results to other theoretical studies suggested not only that GB diffusion is predominant over bulk diffusion, but also that the HEGB is one of fastest grain boundary paths for Ag diffusion in SiC. The Ag diffusion coefficient in the HEGB shows a good agreement with ion-implantation measurements, but is 2-3 orders of magnitude lower than the diffusion coefficients extracted from integral release measurements. The discrepancy between GB diffusion and integral release measurements suggests that other contributions are responsible for the fast release of Ag in some experiments and we propose that these contributions may arise from radiation enhanced diffusion.

preprint2016arXiv

Applicability of DFT + U to U metal and U-Zr alloy

In the Letter [J. Nucl. Mater. 444, 356 (2014)] and Comment [Phys Rev B 90, 157101 (2014)], Soderlind et al. argue that 1) DFT based on GGA already models U metal and U-Zr alloy accurately, and 2) DFT + U models them worse than DFT according to results they calculate or select from our recent study [Phys. Rev. B 88, 235128 (2013)]. Here we demonstrate in response to 1) that previously neglected and more recent experimental data indicate that DFT, even when implemented in all-electron methods, does not model the bulk modulus and elastic constants of αU very accurately. Furthermore, Soderlind et al.'s claim that deficiency exists in our PAW calculation is unfounded and hence our results, including those that show DFT results compare unfavorably with experimental/computational references, are valid. We also demonstrate in response to 2) that Soderlind et al.'s arguments are unsound for three reasons. First, they focus on just the BCC phases γU and γ(U,Zr)--which at the ab initio modeling temperature of 0 K are unstable and hence difficult to model and benchmar--as primary subjects of examination; however it is results for the stable phases mostly neglected by Soderlind et al. that are the primary evidence of our argument. Second, they make unfounded generalization of DFT + U results at selected U eff values to argue that DFT + U in general gives wrong or unsatisfactory results. Third, some key points in Soderlind et al.'s criticisms of DFT + U are not well supported, including the claims that for γ(U,Zr) DFT + U at Ueff = 1.24 eV gives positive deviations from linear dependence of composition that are unprecedentedly large and partially negative enthalpies of mixing that are inconsistent with the existence of miscibility gap in the experimental phase diagram. We therefore maintain our conclusion that DFT + U can be of value for modeling U and U-Zr.

preprint2016arXiv

Electron Emission Energy Barriers and Stability of $Sc_2O_3$ with Adsorbed Ba and Ba-O

In this study we employ Density Functional Theory (DFT) methods to investigate the surface energy barrier for electron emission (surface barrier) and thermodynamic stability of Ba and Ba-O species adsorption under conditions of high temperature (approximately 1200 K) and low pressure (approximately $10^{-10}$ Torr) on the low index surfaces of bixbyite $Sc_2O_3$. The role of Ba in lowering the cathode surface barrier is investigated via adsorption of atomic Ba and Ba-O dimers, where the highest simulated dimer coverage corresponds to a single monolayer film of rocksalt BaO. The change of the surface barrier of a semiconductor due to adsorption of surface species is decomposed into two parts: a surface dipole component and doping component. The lowest surface barrier with atomic Ba on $Sc_2O_3$ was found to be 2.12 eV and 2.04 eV for the (011) and (111) surfaces at 3 and 1 Ba atoms per surface unit cell (0.250 and 0.083 Ba per surface O), respectively. The lowest surface barrier for Ba-O on $Sc_2O_3$ was found to be 1.21 eV on (011) for a 7 Ba-O dimer-per-unit-cell coverage (0.583 dimers per surface O). Generally, we found that Ba in its atomic form on $Sc_2O_3$ surfaces is not stable relative to bulk BaO, while Ba-O dimer coverages between 3 to 7 Ba-O dimers per (011) surface unit cell (0.250 to 0.583 dimers per surface O) produce stable structures relative to bulk BaO. Ba-O dimer adsorption on $Sc_2O_3$ (111) surfaces was found to be unstable versus BaO over the full range of coverages studied. Investigation of combined n-type doping and surface dipole modification showed that their effects interact to yield a reduction less than the two contributions would yield separately.

preprint2016arXiv

Factors controlling oxygen migration barriers in perovskites

Perovskites with fast oxygen ion conduction can enable technologies like solid oxide fuel cells. One component of fast oxygen ion conduction is low oxygen migration barrier. Here we apply ab initio methods on over 40 perovskites to produce a database of oxygen migration barriers ranging from 0.2 to 1.6 eV. Mining the database revealed that systems with low barriers also have low metal-oxygen bond strength, as measured by oxygen vacancy formation energy and oxygen p-band center energy. These correlations provide a powerful descriptor for the development of new oxygen ion conductors and may explain the poor stability of some of the best oxygen conducting perovskites under reducing conditions. Other commonly-cited measures of space, volume, or structure ideality showed only weak correlation with migration barrier. The lowest migration barriers (< 0.5 eV) belong to perovskites with non-transition-metal B-site cations, and may require vacancy-creation strategies that involve no dopants or low-association dopants for optimal performance.

preprint2016arXiv

First-principles Predictions of Electronic Properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based Heterojunctions

Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and therefore alleviate the efficiency droop. Using density functional theory, we studied a newly fabricated quaternary alloy, GaAs1-x-yPyBix, which can host significant amounts of Bi, through calculations of its band gap, spin-orbit splitting, and band offsets with GaAs. We found that the band gap changes of GaAs1-x-yPyBix relative to GaAs are determined mainly by the local structural changes around P and Bi atoms rather than their electronic structure differences. To obtain alloy with lower Auger recombination than GaAs bulk, we identified the necessary constraints on the compositions of P and Bi. Finally, we demonstrated that GaAs/GaAs1-x-yPyBix heterojunctions with potentially low Auger recombination can exhibit small lattice mismatch and large enough band offsets for strong carrier confinement. This work shows that the electronic properties of GaAs1-x-yPyBix are potentially suitable for high-energy infrared light-emitting diodes and laser diodes with improved efficiency.

preprint2016arXiv

Intrinsic defects and conduction characteristics of $Sc_2O_3$ in thermionic cathode systems

Recent experimental observations indicate that bulk $Sc_2O_3$ (~200 nm thick), an insulator at room temperature and pressure, must act as a good electronic conductor during thermionic cathode operation, leading to the observed high emitted current densities and overall superior emission properties over conventional thermionic emitters which do not contain $Sc_2O_3$. Here, we employ ab initio methods using both semilocal and hybrid functionals to calculate the intrinsic defect energetics of Sc and O vacancies and interstitials and their effects on the electronic properties of $Sc_2O_3$ in an effort to explain the good conduction of $Sc_2O_3$ observed in experiment. The defect energetics were used in an equilibrium defect model to calculate the concentrations of defects and their compensating electron and hole concentrations at equilibrium. Overall, our results indicate that the conductivity of $Sc_2O_3$ solely due to the presence of intrinsic defects in the cathode operating environment is unlikely to be high enough to maintain the magnitude of emitted current densities obtained from experiment, and that presence of impurities are necessary to raise the conductivity of $Sc_2O_3$ to a high enough value to explain the current densities observed in experiment. The necessary minimum impurity concentration to impart sufficient electronic conduction is very small (approximately $7.5x10^{-3}$ ppm) and is probably present in all experiments.

preprint2016arXiv

Lithium transport through Lithium-ion battery cathode coatings

The surface coating of cathodes using insulator films has proven to be a promising method for high-voltage cathode stabilization in Li-ion batteries. However, there is still substantial uncertainty about how these films function, specifically with regard to important coating design principles such as lithium solubility and transport through the films. This study uses Density Functional Theory to examine the diffusivity of interstitial lithium in crystalline α-$AlF_3$, α-$Al_2O_3$, m-$ZrO_2$, c-MgO, and α-quartz $SiO_2$, which provide benchmark cases for further understanding of insulator coatings in general. In addition, we propose an Ohmic electrolyte model to predict resistivities and overpotential contributions under battery operating conditions. For the crystalline materials considered we predict that Li+ diffuses quite slowly, with a migration barrier larger than 0.9 eV in all crystalline materials except α-quartz $SiO_2$, which is predicted to have a migration barrier of 0.276 eV along <001>. These results suggest that the stable crystalline forms of these insulator materials, except for oriented α-quartz $SiO_2$, are not practical for conformal cathode coatings. Amorphous $Al_2O_3$ and $AlF_3$ have higher Li+ diffusivities than their crystalline counterparts. Our predicted amorphous $Al_2O_3$ resistivity (1789 MΩm) is near the top of the range of fitted resistivities extracted from previous experiments on nominal $Al_2O_3$ coatings (7.8 to 913 MΩm) while our predicted amorphous $AlF_3$ resistivity (114 MΩm) is close to the middle of the range. These comparisons support our framework for modeling and understanding the impact on overpotential of conformal coatings in terms of their fundamental thermodynamic and kinetic properties, and support that these materials can provide practical conformal coatings in their amorphous form.

preprint2016arXiv

Origin of Fe3+ in Fe-containing, Al-free Mantle Silicate Perovskite

We have studied the ferrous (Fe2+) and ferric (Fe3+) iron concentrations in Al-free Fe containing Mg-silicate perovskite (Mg-Pv) at pressure (P), temperature (T), and oxygen fugacity (fO2) conditions related to the lower mantle using a thermodynamic model based on ab-initio calculations. We consider the oxidation reaction and the charge disproportionation reaction, both of which can produce Fe3+ in Mg-Pv. The model shows qualitatively good agreement with available experimental data on Fe3+/ΣFe (ΣFe = total Fe in system), spin transitions, and equations of state. We predict that under lower-mantle conditions Fe3+/ΣFe determined by the charge disproportionation is estimated to be 0.01-0.07 in Al-free Mg-Pv, suggesting that low Al Mg-Pv in the uppermost pyrolitic mantle (where majoritic garnet contains most of the Al) and in the harzburgitic heterogeneities throughout the lower mantle contains very little Fe3+. We find that the volume reduction by the spin transition of the B-site Fe3+ leads to a minimum Fe3+/ΣFe in Mg-Pv at mid-mantle pressures. The model shows that configurational entropy is a key driving force to create Fe3+ and therefore Fe3+ content is highly temperature sensitive. The temperature sensitivity may lead to a maximum Fe3+/ΣFe in Mg-Pv in warm regions at the core-mantle boundary region, such as Large Low Shear Velocity Provinces (LLSVPs), potentially altering the physical (e.g., bulk modulus) and transport (e.g., thermal and electrical conductivities) properties of the heterogeneities.

preprint2016arXiv

Origins of Large Voltage Hysteresis in High Energy-Density Metal Fluoride Lithium-Ion Battery Conversion Electrodes

Metal fluoride and oxides can store multiple lithium-ions through conversion chemistry to enable high energy-density lithium-ion batteries. However, their practical applications have been hindered by an unusually large voltage hysteresis between charge and discharge voltage-profiles and the consequent low energy efficiency (< 80%). The physical origins of such hysteresis are rarely studied and poorly understood. Here we employ in situ X-ray absorption spectroscopy (XAS), transmission electron microscopy (TEM), density-functional-theory (DFT) calculations, and galvanostatic intermittent titration technique (GITT) to first correlate the voltage profile of iron fluoride ($FeF_3$), a representative conversion electrode material, with evolution and spatial distribution of intermediate phases in the electrode. The results reveal that, contrary to conventional belief, the phase evolution in the electrode is symmetrical during discharge and charge. However, the spatial evolution of the electrochemically active phases, which is controlled by reaction kinetics, is different. We further propose that the voltage hysteresis in the $FeF_3$ electrode is kinetic in nature. It is the result of Ohmic voltage drop, reaction overpotential, and different spatial distributions of electrochemically-active phases (i.e. compositional inhomogeneity). Therefore, the large hysteresis can be expected to be mitigated by rational design and optimization of material microstructure and electrode architecture to improve the energy efficiency of lithium-ion batteries based on conversion chemistry.

preprint2016arXiv

Oxygen Point Defect Chemistry in Ruddlesden-Popper Oxides (La$_{1-x}$Sr$_{x}$)$_{2}$MO$_{4{\pm}δ}$ (M = Co, Ni, Cu)

Stability of oxygen point defects in Ruddlesden-Popper oxides (La$_{1-x}$Sr$_{x}$)$_{2}$MO$_{4{\pm}δ}$ (M = Co, Ni, Cu) is studied with density functional theory calculations to determine their stable sites, charge states, and energetics as functions of Sr content ($x$), transition metal (M) and defect concentration (δ). We demonstrate that the dominant O point defects can change between oxide interstitials, peroxide interstitials, and vacancies. Generally, increasing $x$ and atomic number of M stabilizes peroxide over oxide interstitials, as well as vacancies over both peroxide and oxide interstitials; increasing δ destabilizes both oxide interstitials and vacancies, but affects little peroxide interstitials. We also demonstrate that the O 2$p$-band center is a powerful descriptor for these materials and correlates linearly with the formation energy of all the defects. The trends of formation energy versus $x$, M and δ and the correlation with O 2$p$-band center are explained in terms of oxidation chemistry and electronic structure.

preprint2016arXiv

Radiation-induced mobility of small defect clusters in covalent materials

Although defect clusters are detrimental to electronic and mechanical properties of semiconductor materials, annihilation of such clusters is limited by their lack of thermal mobility due to high migration barriers. Here, we find that small clusters in bulk SiC (a covalent material of importance for both electronic and nuclear applications) can become mobile at room temperature under the influence of electron radiation. So far, direct observation of radiation-induced diffusion of defect clusters in bulk materials has not been demonstrated yet. This finding was made possible by low angle annular dark field (LAADF) scanning transmission electron microscopy (STEM) combined with non-rigid registration technique to remove sample instability, which enables atomic resolution imaging of small migrating defect clusters. We show that the underlying mechanism of this athermal diffusion is ballistic collision between incoming electrons and cluster atoms. Our findings suggest that defect clusters may be mobile under certain irradiation conditions, changing current understanding of cluster annealing process in irradiated covalent materials.

preprint2016arXiv

Strain Effects on Oxygen Migration in Perovskites

Fast oxygen transport materials are necessary for a range of technologies, including efficient and cost-effective solid oxide fuel cells, gas separation membranes, oxygen sensors, chemical looping devices, and memristors. Strain is often proposed as a method to enhance the performance of oxygen transport materials, but the magnitude of its effect and its underlying mechanisms are not well-understood, particularly in the widely-used perovskite-structured oxygen conductors. This work reports on an ab initio prediction of strain effects on migration energetics for nine perovskite systems of the form LaBO3, where B = [Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Ga]. Biaxial strain, as might be easily produced in epitaxial systems, is predicted to lead to approximately linear changes in migration energy. We find that tensile biaxial strain reduces the oxygen vacancy migration barrier across the systems studied by an average of 66 meV per percent strain for a single selected hop, with a low of 36 and a high of 89 meV decrease in migration barrier per percent strain across all systems. The estimated range for the change in migration barrier within each system is approximately 25 meV per percent strain when considering all hops. These results suggest that strain can significantly impact transport in these materials, e.g., a 2% tensile strain can increase the diffusion coefficient by about three orders of magnitude at 300 K (one order of magnitude at 500 °C or 773 K) for one of the most strain-responsive materials calculated here (LaCrO3). We show that a simple elasticity model, which assumes only dilative or compressive strain in a cubic environment and a fixed migration volume, can qualitatively but not quantitatively model the strain dependence of the migration energy, suggesting that factors not captured by continuum elasticity play a significant role in the strain response.

preprint2016arXiv

The MAterials Simulation Toolkit (MAST) for atomistic modeling of defects and diffusion

The MAterials Simulation Toolkit (MAST) is a workflow manager and post-processing tool for ab initio defect and diffusion workflows. MAST codifies research knowledge and best practices for such workflows, and allows for the generation and management of easily modified and reproducible workflows, where data is stored along with workflow information for data provenance tracking. MAST is open-source and available for download (see PDF for links).

preprint2016arXiv

Thermal Diffusion Boron Doping of Single-Crystal Diamond

With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond. We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.

preprint2016arXiv

Understanding and controlling the work function of perovskite oxides using Density Functional Theory

Perovskite oxides containing transition metals are promising materials in a wide range of electronic and electrochemical applications. However, neither their work function values nor an understanding of their work function physics have been established. Here, we predict the work function trends of a series of perovskite ($ABO_3$ formula) materials using Density Functional Theory, and show that the work functions of (001)-terminated AO- and $BO_2$-oriented surfaces can be described using concepts of electronic band filling, bond hybridization, and surface dipoles. The calculated range of AO ($BO_2$) work functions are 1.60-3.57 eV (2.99-6.87 eV). We find an approximately linear correlation ($R^2$ between 0.77-0.86, depending on surface termination) between work function and position of the oxygen 2p band center, which correlation enables both understanding and rapid prediction of work function trends. Furthermore, we identify $SrVO_3$ as a stable, low work function, highly conductive material. Undoped (Ba-doped) $SrVO_3$ has an intrinsically low AO-terminated work function of 1.86 eV (1.07 eV). These properties make $SrVO_3$ a promising candidate material for a new electron emission cathode for application in high power microwave devices, and as a potential electron emissive material for thermionic energy conversion technologies.

preprint2013arXiv

AFLOW: An automatic framework for high-throughput materials discovery

Recent advances in computational materials science present novel opportunities for structure discovery and optimization, including uncovering of unsuspected compounds and metastable structures, electronic structure, surface, and nano-particle properties. The practical realization of these opportunities requires systematic generation and classification of the relevant computational data by high-throughput methods. In this paper we present Aflow (Automatic Flow), a software framework for high-throughput calculation of crystal structure properties of alloys, intermetallics and inorganic compounds. The Aflow software is available for the scientific community on the website of the materials research consortium, aflowlib.org. Its geometric and electronic structure analysis and manipulation tools are additionally available for online operation at the same website. The combination of automatic methods and user online interfaces provide a powerful tool for efficient quantum computational materials discovery and characterization.

preprint2005arXiv

Coarse-graining protein energetics in sequence variables

We show that cluster expansions (CE), previously used to model solid-state materials with binary or ternary configurational disorder, can be extended to the protein design problem. We present a generalized CE framework, in which properties such as energy can be unambiguously expanded in the amino-acid sequence space. The CE coarse grains over nonsequence degrees of freedom (e.g., side-chain conformations) and thereby simplifies the problem of designing proteins, or predicting the compatibility of a sequence with a given structure, by many orders of magnitude. The CE is physically transparent, and can be evaluated through linear regression on the energies of training sequences. We show, as example, that good prediction accuracy is obtained with up to pairwise interactions for a coiled-coil backbone, and that triplet interactions are important in the energetics of a more globular zinc-finger backbone.

preprint2005arXiv

The electronic structure and band gap of LiFePO4 and LiMnPO4

Materials with the olivine LixMPO4 structure form an important new class of materials for rechargeable Li batteries. There is significant interest in their electronic properties because of the importance of electronic conductivity in batteries for high rate applications. The density of states of LixMPO4 (x = 0, 1 and M = Fe, Mn) has been determined with the ab initio GGA+U method, appropriate for these correlated electron systems. Computed results are compared with the optical gap of LiFePO4, as measured using UV-Vis-NIR diffuse reflectance spectroscopy. The results obtained from experiment (3.8-4.0 eV) and GGA+U computations (3.7 eV) are in very good agreement. However, standard GGA, without the same level of treatment of electron correlation, is shown to make large errors in predicting the electronic structure. It is argued that olivines are likely to be polaronic conductors with extrinsically determined carrier levels and that their electronic conductivity is therefore not simply related to the band gap.