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D. K. Maude

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Published work

36 published item(s)

preprint2016arXiv

A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect

Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperature and magnetic field for a wide range of filling factors. The Landau level width is found to be independent of magnetic field. The mobility edge moves, in the case of changing Landau level overlap to maintain a sample dependent critical density of states at that energy. An analysis of filling factor $ν=2/3$ shows that the composite Fermion Landau levels have exactly the same width as their electron counterparts. An important ingredient of the model is the Lorentzian broadening with long tails which provide localized states deep in the gap which are essential in order to reproduce the robust high temperature $B_c(T)$ phase observed in experiment.

preprint2016arXiv

Excitons in atomically thin black phosphorus

Raman scattering and photoluminescence spectroscopy are used to investigate the optical properties of single layer black phosphorus obtained by mechanical exfoliation of bulk crystals under an argon atmosphere. The Raman spectroscopy, performed in situ on the same flake as the photoluminescence measurements, demonstrates the single layer character of the investigated samples. The emission spectra, dominated by excitonic effects, display the expected in plane anisotropy. The emission energy depends on the type of substrate on which the flake is placed due to the different dielectric screening. Finally, the blue shift of the emission with increasing temperature is well described using a two oscillator model for the temperature dependence of the band gap.

preprint2016arXiv

Magneto-excitons in large area CVD grown monolayer MoS$_{2}$ and MoSe$_{2}$ on sapphire

Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is maximum at low temperature, is only $\simeq 0.2\%$. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of valley g-factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS$_2$.

preprint2016arXiv

Onset of exciton-exciton annihilation in single layer black phosphorus

The exciton dynamics in monolayer black phosphorus is investigated over a very wide range of photoexcited exciton densities using time resolved photoluminescence. At low excitation densities, the exciton dynamics is successfully described in terms of a double exponential decay. With increasing exciton population, a fast, non-exponential component develops as exciton-exciton annihilation takes over as the dominant recombination mechanism under high excitation conditions. Our results identify an upper limit for the injection density, after which exciton-exciton annihilation reduces the quantum yield, which will significantly impact the performance of light emitting devices based on single layer black phosphorus.

preprint2016arXiv

The hole Fermi surface in Bi$_{2}$Se$_{3}$ probed by quantum oscillations

Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between $0^\circ$ and $90^\circ$, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to $24$~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by $GW$ calculations.

preprint2015arXiv

Disorder-induced stabilization of the quantum Hall ferromagnet

We report on an absolute measurement of the electronic spin polarization of the $ν=1$ integer quantum Hall state. The spin polarization is extracted in the vicinity of $ν=1$ (including at exactly $ν=1$) via resistive NMR experiments performed at different magnetic fields (electron densities), and Zeeman energy configurations. At the lowest magnetic fields, the polarization is found to be complete in a narrow region around $ν=1$. Increasing the magnetic field (electron density) induces a significant depolarization of the system, which we attribute to a transition between the quantum Hall ferromagnet and the Skyrmion glass phase theoretically expected as the ratio between Coulomb interactions and disorder is increased. These observations account for the fragility of the polarization previously observed in high mobility 2D electron gas, and experimentally demonstrate the existence of an optimal amount of disorder to stabilize the ferromagnetic state.

preprint2015arXiv

Intervalley scattering of excitons and trions in monolayer WSe$_{2}$ under strong excitation

Monolayer transition metal dichalcogenides offer the possibility of optical control of the valley degree of freedom. In order to asses the potential of these materials in applications, detailed knowledge of the valley dynamics is essential. In this work, we apply low temperature time-resolved photoluminescence (PL) measurements to investigate exciton valley relaxation dynamics and, in particular, its behavior under strong excitation. At the lowest excitation powers the inter valley scattering time is $\simeq 50$ ps, but shortens by more than a factor of two at the highest powers. We attribute this acceleration to either heating of the exciton system or the presence of a dense exciton gas, which could influence the exciton valley properties. Furthermore, we analyze the PL dynamics of excitons and trions. We find that the PL decays for all peaks are bi-exponential and approximately independent of the excitation power. We attribute the short decay to radiative recombination and escape to a reservoir of dark states. The long decay is ascribed to a transfer of excitons back from the reservoir. For the first time, we evaluate the exciton PL decay time of $\simeq$ 10 ps. The latter process is valley-conserving and occurs on a timescale of $\simeq$ 50 ps.

preprint2015arXiv

Magneto-resistance quantum oscillations in a magnetic two-dimensional electron gas

Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts with magnetic Mn ions, can be described by incorporating the electron-Mn exchange interaction into the traditional Lifshitz-Kosevich formalism. The modified spin splitting leads to characteristic beating pattern in the SdH oscillations, the study of which indicates the formation of Mn clusters resulting in direct anti-ferromagnetic Mn-Mn interaction. The Landau level broadening in this system shows a peculiar decrease with increasing temperature, which could be related to statistical fluctuations of the Mn concentration.

preprint2015arXiv

Optical investigation of monolayer and bulk tungsten diselenide (WSe$_{2}$) in high magnetic fields

Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the magnetic field and exhibits a splitting which originates from the magnetic field induced valley splitting. The monolayer data can be described using a single particle picture with a Dirac-like Hamiltonian for massive Dirac fermions, with an additional term to phenomenologically include the valley splitting. In contrast, in bulk WSe$_{2}$ where the inversion symmetry is restored, transmission measurements show a distinctly excitonic behavior with absorption to the 1s and 2s states. Magnetic field induces a spin splitting together with a small diamagnetic shift and cyclotron like behavior at high fields, which is best described within the hydrogen model.

preprint2014arXiv

Second order resonant Raman scattering in single layer tungsten disulfide (WS$_{2}$)

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.

preprint2014arXiv

Unintentional high density p-type modulation doping of a GaAs/AlAs core-multi-shell nanowire

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an \emph{unintentional} p-type doping. Magneto-optical studies of such a GaAs/AlAs core multi-shell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1~nm GaAs layer in the shell. Micro-photoluminescence in high magnetic field shows a clear signature of avoided crossings of the $n=0$ Landau level emission line with the $n=2$ Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large 2D hole density in the structure.

preprint2013arXiv

Classical percolation fingerprints in the high-temperature regime of the integer quantum Hall effect

We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover magnetic field B_c ~ 1 T, which turns out to be correlated with the onset of the integer quantum Hall effect at low temperatures. We show that the high magnetic field regime at B > B_c can be understood in terms of classical percolative transport in a smooth disordered potential. From the temperature dependence of the peak longitudinal conductance, we extract scaling exponents which are in good agreement with the theoretically expected values. We also prove that inelastic scattering on phonons is responsible for dissipation in a wide temperature range going from 1 to 50 K at high magnetic fields.

preprint2013arXiv

Dispersive line shape in the vicinity of the ν = 1 quantum Hall state: Coexistence of Knight shifted and unshifted resistively detected NMR responses

The frequency splitting between the dip and the peak of the resistively detected nuclear magnetic resonance (RDNMR) dispersive line shape (DLS) has been measured in the quantum Hall effect regime as a function of filling factor, carrier density and nuclear isotope. The splitting increases as the filling factor tends to ν = 1 and is proportional to the hyperfine coupling, similar to the usual Knight shift versus ν-dependence. The peak frequency shifts linearly with magnetic field throughout the studied filling factor range and matches the unshifted substrate signal, detected by classical NMR. Thus, the evolution of the splitting is entirely due to the changing Knight shift of the dip feature. The nuclear spin relaxation time, T1, is extremely long (hours) at precisely the peak frequency. These results are consistent with the local formation of a ν = 2 phase due to the existence of spin singlet D$^-$ complexes.

preprint2013arXiv

High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire

Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.

preprint2013arXiv

Magnetotransport in graphene on silicon side of SiC

We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.

preprint2013arXiv

Optical manipulation of the exciton charge state in single layer tungsten disulfide

Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS$_{2}$) obtained by exfoliating n-type bulk crystals. Direct gap emission with both neutral and charged exciton recombination is observed in the low temperature PL spectra. The ratio between the trion and exciton emission can be tuned simply by varying the excitation power. Moreover, the intensity of the trion emission can be independently tuned using additional sub band gap laser excitation.

preprint2013arXiv

Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene

We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.

preprint2012arXiv

Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal

The magnetic field and temperature dependence of the in-plane tunneling conductance $dI/dV(V)$ in high-quality nonsuperconducting (down to 10 mK) layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystals has been investigated using break junctions. Combining measurements of the in-plane magnetoresistivity $ρ_{ab}(T,H)$ and the magnetotunneling, we present evidence for the existence of a small "pseudogap" in a nonsuperconducting cuprate, without local incoherent pairs or any correlation phenomena associated with superconductivity. We are unable to distinguish if such a "pseudogap" is totally unrelated to superconductivity or if its existence is a necessary condition for the subsequent occurrence of superconductivity with increasing carrier density in the sample.

preprint2012arXiv

High Field magnetospectroscopy to probe the 1.4eV Ni color center in diamond

A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin Hamiltonian of Nazaré, Nevers and Davies [Phys. Rev. B 43, 14196 (1991)] for interstitial Ni$^{+}$ with the electronic configuration $3d^{9}$ and effective spin $S=1/2$. Our results unequivocally demonstrate the trigonal symmetry of the defect which preferentially aligns along the [111] growth direction on the (111) face, but reveal the shortcomings of the crystal field model for this particular defect.

preprint2012arXiv

Magnetic-field-induced Stoner transition in a dilute quantum Hall system

In a recent paper [Phys.Rev.B.\textbf{84}, 161307 (2011)], experimental data on spin splitting in the integer quantum Hall effect has been reported in a high mobility dilute 2D electron gas with electron density as low as 0.2 $\times$ 10$^{11}$ cm $^{-2}$. In this work, we show that an excellent \emph{quantitative} description of these data can be obtained within the model of the magnetic-field-induced Stoner transition in the quantum Hall regime. This provides a powerful tool to probe the non-trivial density dependance of electron-electron interactions in the dilute regime of the 2D electron gas.

preprint2012arXiv

NMR probing of the spin polarization of the nu=5/2 quantum Hall state

Resistively detected nuclear magnetic resonance is used to measure the Knight shift of the As nuclei and determine the electron spin polarization of the fractional quantum Hall states of the second Landau level. We show that the 5/2 state is fully polarized within experimental error, thus confirming a fundamental assumption of the Moore-Read theory. We measure the electron heating under radio frequency excitation, and show that we are able to detect NMR at electron temperatures down to 30 mK.

preprint2011arXiv

Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?

We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology.

preprint2011arXiv

High field magneto-transmission investigation of natural graphite

Magneto-transmission measurements in magnetic fields in the range B=20-60T have been performed to probe the H and K-point Landau level transitions in natural graphite. At the H-point, two series of transitions, whose energy evolves as $\sqrt{B}$ are observed. A reduced Slonczewski, Weiss and McClure (SWM) model with only two parameters to describe the intra-layer (gamma0) and inter-layer (gamma1) coupling correctly describes all observed transitions. Polarization resolved measurements confirm that the observed apparent splitting of the H-point transitions at high magnetic field cannot be attributed to an asymmetry of the Dirac cone.

preprint2011arXiv

The origin of electron-hole asymmetry in graphite

The electron hole asymmetry has been measured in natural graphite using magneto-optical absorption measurements. A splitting is observed for the transitions at both the $K$-point and the $H$-point of the Brillouin zone of graphite where the effect of trigonal warping vanishes. This result is fully consistent with the SWM Hamiltonian providing the free electron kinetic energy terms are taken into account. An identical electron-hole asymmetry should be present in graphene.

preprint2011arXiv

Using the de Haas-van Alphen effect to map out the closed three-dimensional Fermi surface of natural graphite

The Fermi surface of graphite has been mapped out using de Haas van Alphen (dHvA) measurements at low temperature with in-situ rotation. For tilt angles $θ>60^{\circ}$ between the magnetic field and the c-axis, the majority electron and hole dHvA periods no longer follow the $\cos(θ)$ behavior demonstrating that graphite has a 3 dimensional closed Fermi surface. The Fermi surface of graphite is accurately described by highly elongated ellipsoids. A comparison with the calculated Fermi surface suggests that the SWM trigonal warping parameter $γ_3$ is significantly larger than previously thought.

preprint2010arXiv

Enhancement of the spin-gap in fully occupied two-dimensional Landau levels

Polarization-resolved magneto-luminescence, together with simultaneous magneto-transport measurements, have been performed on a two-dimensional electron gas (2DEG) confined in CdTe quantum well in order to determine the spin-splitting of fully occupied electronic Landau levels, as a function of the magnetic field (arbitrary Landau level filling factors) and temperature. The spin splitting, extracted from the energy separation of the σ+ and σ- transitions, is composed of the ordinary Zeeman term and a many-body contribution which is shown to be driven by the spin-polarization of the 2DEG. It is argued that both these contributions result in a simple, rigid shift of Landau level ladders with opposite spins.

preprint2010arXiv

Fractional quantum Hall effect in CdTe

The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.

preprint2010arXiv

Optical Probing of the Spin Polarization of the nu=5/2 Quantum Hall State

We apply polarization resolved photoluminescence spectroscopy to measure the spin polarization of a two dimensional electron gas in perpendicular magnetic field. In the vicinity of filling factor nu=5/2, we observe a sharp discontinuity in the energy of the zero Landau level emission line. We find that the splitting between the two circular polarizations exhibits a sharp drop at nu=5/2 and is equal to the bare Zeeman energy, which resembles the behavior at even filling factors. We show that this behavior is consistent with filling factor nu=5/2 being unpolarized.

preprint2010arXiv

Plateau insulator transition in graphene

The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases.

preprint2010arXiv

Quantum Hall states under conditions of vanishing Zeeman energy

We report on magneto-transport measurements of a two-dimensional electron gas confined in a Cd$_{0.997}$Mn$_{0.003}$Te quantum well structure under conditions of vanishing Zeeman energy. The electron Zeeman energy has been tuned via the $s-d$ exchange interaction in order to probe different quantum Hall states associated with metallic and insulating phases. We have observed that reducing Zeeman energy to zero does not necessary imply the disappearing of quantum Hall states, i.e. a closing of the spin gap. The spin gap value under vanishing Zeeman energy conditions is shown to be dependent on the filling factor. Numerical simulations support a qualitative description of the experimental data presented in terms of a crossing or an avoided-crossing of spin split Landau levels with same orbital quantum number $N$.

preprint2009arXiv

Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous current-density distribution gives rise to additional features in the magneto-transport, such as resistance asymmetry and modified longitudinal resistances. We experimentally demonstrate that the asymmetry relations satisfied in the integer filling factor regime are valid also in the transition regime to non-integer filling factors, thereby suggesting a more general form of these asymmetry relations. A model is developed based on the screening theory of the integer quantum Hall effect that allows the self-consistent calculation of the local electron density and thereby the local current density including the current along incompressible stripes. The model, which also includes the so-called `static skin effect' to account for the current density distribution in the compressible regions, is capable of explaining the main experimental observations. Due to the existence of an incompressible-compressible transition in the bulk, the system behaves always metal-like in contrast to the conventional Landauer-Buettiker description, in which the bulk remains completely insulating throughout the quantized Hall plateau regime.

preprint2008arXiv

Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: A comparison

Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dirac fermions, the data obtained on bulk graphite can only be explained taking into account the 3D nature of graphite, e.g. by using the standard Slonczewski-Weiss-McClure model.

preprint2005arXiv

Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers

We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.

preprint1997arXiv

Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.

preprint1997arXiv

Magnetotransport in wide parabolic PbTe quantum wells

The 3D- and 2D- behaviour of wide parabolic PbTe single quantum wells, which consist of PbTe p-n-p-structures, are studied theoretically and experimentally. A simple model combines the 2D- subband levels and the 3D-Landau levels in order to calculate the density of states in a magnetic field perpendicular to the 2D plane. It is shown that at a channel width of about 300nm on can expect to observe 3D- and 2D-behaviour at the same time. Magnetotransport experiments in selectively contacted Hall bar samples are performed at temperatures down to T = 50 mK and at magnetic fields up to B = 17 T.