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Researcher profile

P. Plochocka

P. Plochocka contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2014arXiv

Second order resonant Raman scattering in single layer tungsten disulfide (WS$_{2}$)

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Unintentional high density p-type modulation doping of a GaAs/AlAs core-multi-shell nanowire

Achieving significant doping in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an \emph{unintentional} p-type doping. Magneto-optical studies of such a GaAs/AlAs core multi-shell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1~nm GaAs layer in the shell. Micro-photoluminescence in high magnetic field shows a clear signature of avoided crossings of the $n=0$ Landau level emission line with the $n=2$ Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large 2D hole density in the structure.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire

Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Optical manipulation of the exciton charge state in single layer tungsten disulfide

Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS$_{2}$) obtained by exfoliating n-type bulk crystals. Direct gap emission with both neutral and charged exciton recombination is observed in the low temperature PL spectra. The ratio between the trion and exciton emission can be tuned simply by varying the excitation power. Moreover, the intensity of the trion emission can be independently tuned using additional sub band gap laser excitation.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The origin of electron-hole asymmetry in graphite

The electron hole asymmetry has been measured in natural graphite using magneto-optical absorption measurements. A splitting is observed for the transitions at both the $K$-point and the $H$-point of the Brillouin zone of graphite where the effect of trigonal warping vanishes. This result is fully consistent with the SWM Hamiltonian providing the free electron kinetic energy terms are taken into account. An identical electron-hole asymmetry should be present in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Brightening of dark excitons in a single quantum dot containing a single magnetic ion

A promising method to investigate dark exciton transitions in quantum dots is presented. The optical recombination of the dark exciton is allowed when the exciton state is coupled with an individual magnetic impurity (manganese ion). It is shown that the efficient radiative recombination is possible when the exchange interaction with the magnetic ion is accompanied by a mixing of the heavy-light hole states related to an in-plane anisotropy of the quantum dot. It is also shown that the dark exciton recombination is an efficient channel of manganese spin orientation.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Femtosecond study of the interplay between excitons, trions, and carriers in (Cd,Mn)Te quantum wells

We present an absorption study of the neutral and positively charged exciton (trion) under the influence of a femtosecond, circularly polarized, resonant pump pulse. Three populations are involved: free holes, excitons, and trions, all exhibiting transient spin polarization. In particular, a polarization of the hole gas is created by the formation of trions. The evolution of these populations is studied, including the spin flip and trion formation processes. The contributions of several mechanisms to intensity changes are evaluated, including phase space filling and spin-dependent screening. We propose a new explanation of the oscillator strength stealing phenomena observed in p-doped quantum wells, based on the screening of neutral excitons by charge carriers. We have also found that binding heavy holes into charged excitons excludes them from the interaction with the rest of the system, so that oscillator strength stealing is partially blocked

0 citations0 reviewsNo code linkedOpen access