Researcher profile

A. A. Mitioglu

A. A. Mitioglu contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Valley-magnetophonon resonance for interlayer excitons

Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magnetophonon resonance for localized interlayer excitons promoted by invervalley hole scattering. It leads to a resonant increase of the photoluminescence polarization degree at the same field of 24.2 Tesla for H-type and R-type stacking configurations despite their vastly different excitonic energy splittings. As a microscopic mechanism of the hole intervalley scattering we identify the scattering with chiral TA phonons of MoSe$_2$ between excitonic states mixed by the long-range electron hole exchange interaction.

preprint2014arXiv

Second order resonant Raman scattering in single layer tungsten disulfide (WS$_{2}$)

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.

preprint2013arXiv

High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire

Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.

preprint2013arXiv

Optical manipulation of the exciton charge state in single layer tungsten disulfide

Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS$_{2}$) obtained by exfoliating n-type bulk crystals. Direct gap emission with both neutral and charged exciton recombination is observed in the low temperature PL spectra. The ratio between the trion and exciton emission can be tuned simply by varying the excitation power. Moreover, the intensity of the trion emission can be independently tuned using additional sub band gap laser excitation.