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Christoph Stampfer

Christoph Stampfer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.app-phphysics.ed-phcond-mat.str-elphysics.optics

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Published work

34 published item(s)

preprint2026arXiv

Probing the band structure of the strongly correlated antiferromagnet NiPS3 across its phase transition

NiPS3 is an exfoliable van-der-Waals intralayer antiferromagnet with zigzag-type spin arrangement. It is distinct from other TMPS3 (TM: transition metal) materials by optical excitations into a strongly correlated state that is tied to the magnetic properties. However, the related, fundamental band structure across the antiferromagnetic phase transition has not been probed yet. Here, we use angular-resolved photoelectron spectroscopy with μm resolution in combination with DFT+U calculations for that purpose. We identify a characteristic band shift across TN. It is attributed to bands of mixed Ni and S character related to the superexchange interaction of Ni 3t2g orbitals. Moreover, we find a structure above the valence band maximum with little angular dispersion that could not be reproduced by the calculations. The discrepancy suggests the influence of many-body interactions beyond the DFT+U approximations in striking contrast to the results on MnPS3 and FePS3, where these calculations were sufficient for an adequate description.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

2D Materials for Future Heterogeneous Electronics

Graphene and two-dimensional materials (2DM) remain an active field of research in science and engineering over 15 years after the first reports of 2DM. The vast amount of available data and the high performance of device demonstrators leave little doubt about the potential of 2DM for applications in electronics, photonics and sensing. So where are the integrated chips and enabled products? We try to answer this by summarizing the main challenges and opportunities that have thus far prevented 2DM applications.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Probing two-electron multiplets in bilayer graphene quantum dots

We report on finite bias spectroscopy measurements of the two-electron spectrum in a gate defined bilayer graphene (BLG) quantum dot for varying magnetic fields. The spin and valley degree of freedom in BLG give rise to multiplets of 6 orbital symmetric and 10 orbital anti-symmetric states. We find that orbital symmetric states are lower in energy and separated by $\approx 0.4 - 0.8$ meV from orbital anti-symmetric states. The symmetric multiplet exhibits an additional energy splitting of its 6 states of $\approx 0.15 - 0.5$ meV due to lattice scale interactions. The experimental observations are supported by theoretical calculations, which allow to determine that inter-valley scattering and 'current-current' interaction constants are of the same magnitude in BLG.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Using a Smartphone pressure sensor as Pitot tube speedometer

In this article, an experiment to measure air velocity with the barometer of a smartphone is presented utilizing the concept of a Pitot tube. For the experiment, the app phyphox is used which has a set of useful features for performing smartphone-based experiments 9,10 . Both the data analysis tools included in the app phyphox and the remote access function to smartphones in experimental setups are used in the presented experiment. This experiment is also an example for designing customized experiments within phyphox which can be realized by any user via a web-based editor 9 . In addition, it is shown how an external Bluetooth pressure sensor can be used to extend an experiment, which is used here to measure the speed of a vehicle. Such an integration of external Bluetooth Low Energy sensors into smartphone experiments became available with phyphox version 1.1.0.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons

Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots

Graphene and bilayer graphene quantum dots are promising hosts for spin qubits with long coherence times. Although recent technological improvements make it possible to confine single electrons electrostatically in bilayer graphene quantum dots, and their spin and valley texture of the single particle spectrum has been studied in detail, their relaxation dynamics remains still unexplored. Here, we report on transport through a high-frequency gate controlled single-electron bilayer graphene quantum dot. By transient current spectroscopy of single-electron spin states, we extract a lower bound of the spin relaxation time of 0.5~$μ$s. This result represents an important step towards the investigation of spin coherence times in graphene-based quantum dots and the implementation of spin-qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrostatic detection of Shubnikov-de-Haas oscillations in bilayer graphene by Coulomb resonances in gate-defined quantum dots

A gate-defined quantum dot in bilayer graphene is utilized as a sensitive electrometer for probing the charge density of its environment. Under the influence of a perpendicular magnetic field, the charge carrier density of the channel region next to the quantum dot oscillates due to the formation of Landau levels. This is experimentally observed as oscillations in the gate-voltage positions of the Coulomb resonances of the nearby quantum dot. From the frequency of the oscillations, we extract the charge carrier density in the channel and from the amplitude the shift of the quantum dot potential. We compare these experimental results with an electrostatic simulation of the device and find good agreement.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Radially polarized light beams from spin-forbidden dark excitons and trions in monolayer WSe$_2$

The rich optical properties of transition metal dichalcogenide monolayers (TMD-MLs) render these materials promising candidates for the design of new optoelectronic devices. Despite the large number of excitonic complexes in TMD-MLs, the main focus has been put on optically bright neutral excitons. Spin-forbidden dark excitonic complexes have been addressed for basic science purposes, but not for applications. We report on spin-forbidden dark excitonic complexes in ML WSe$_2$ as an ideal system for the facile generation of radially polarized light beams. Furthermore, the spatially resolved polarization of photoluminescence beams can be exploited for basic research on excitons in two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators

The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due to the unintentional doping. This results in a metallic conduction of the bulk which dominates the transport measurements and hinders the probing of the surface states in these experiments. In this study, we investigate various strategies to reduce the residual doping in Bi-based topological insulators. Flakes of Bi$_2$Se$_3$ and Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ are grown by physical vapor deposition and their structural and electronic properties are compared to mechanically exfoliated flakes. Using Raman spectroscopy, we explore the role of the substrate in this process and present the optimal conditions for the fabrication of high quality crystals. Despite of this improvement, we show that the vapor phase deposited flakes still suffer from structural disorder which leads to the residual n-type doping of the bulk. Using magneto-measurements we show that exfoliated flakes have better electrical properties and are thus more promising for the probing of surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unveiling valley lifetimes of free charge carriers in monolayer WSe$_2$

We report on nanosecond long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe$_2$, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent with both electron-phonon and spin-orbit scattering. The longest lifetimes are seen for spin-polarized bound excitons in the band gap region. We explain our findings via two distinct, Fermi level-dependent scattering channels of optically excited, valley polarized bright trions either via dark or bound states. By electrostatic gating we demonstrate that the transition metal dichalcogenide WSe$_2$ can be tuned to be either an ideal host for long-lived localized spin states or allow for nanosecond valley lifetimes of free charge carriers (> 10 ns).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley lifetimes of conduction band electrons in monolayer WSe$_2$

One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore the gate-dependent valley lifetimes of free conduction band electrons of monolayer WSe$_2$. When tuning the Fermi energy into the conduction band we observe a strong decrease of the respective valley lifetimes which is consistent with both spin-orbit and electron-phonon scattering. We explain the formation of a valley polarization by the scattering of optically excited valley polarized bright trions into dark states by intervalley scattering. Furthermore, we show that the conventional time-resolved Kerr rotation measurement scheme has to be modified to account for photo-induced gate screening effects. Disregarding this adaptation can lead to erroneous conclusions drawn from gate-dependent optical measurements and can completely mask the true gate-dependent valley dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?

It has been argued that current saturation in graphene field-effect transistors (GFETs) is needed to get the highest possible maximum oscillation frequency (fmax). This paper numerically investigates whether velocity saturation can help to get better current saturation and if that correlates with enhanced fmax. For such a purpose, we used a drift-diffusion simulator that includes several factors that influence output conductance, especially at short channel lengths and-or large drain bias: short-channel electrostatics, saturation velocity, graphene-dielectric interface traps, and self-heating effects. As a testbed for our investigation, we analyzed fabricated GFETs with high extrinsin cutoff frequency fT,x (34 GHz) and fmax (37 GHz). Our simulations allow for a microscopic (local) analysis of the channel parameteres such as carrier concentration, drift and saturation velocities. For biases far away from the Dirac voltage, where the channel behaves as unipolar, we confirmed that the higher is the drift velocity, as close as possible to the saturation velocity, the greater fmax is. However, the largest fmax is recorded at biases near the crossover between unipolar and bipolar behavior, where it does not hold that the highest drift velocity maximizes fmax. In fact, the position and magnitude of the largest fmax depend on the complex interplay between the carrier concentration and total velocity which, in turn, are impacted by the self-heating. Importantly, this effect was found to severely limit radio-frequency performance, reducing the maximum fmax from around 60 to 40 GHz.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Single-electron double quantum dots in bilayer graphene

We present transport measurements through an electrostatically defined bilayer graphene double quantum dot in the single electron regime. With the help of a back gate, two split gates and two finger gates we are able to control the number of charge carriers on two gate-defined quantum dot independently between zero and five. The high tunability of the device meets requirements to make such a device a suitable building block for spin-qubits. In the single electron regime, we determine interdot tunnel rates on the order of 2~GHz. Both, the interdot tunnel coupling, as well as the capacitive interdot coupling increase with dot occupation, leading to the transition to a single quantum dot. Finite bias magneto-spectroscopy measurements allow to resolve the excited state spectra of the first electrons in the double quantum dot; being in agreement with spin and valley conserving interdot tunneling processes.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Advanced tools for smartphone-based experiments: phyphox

The sensors in modern smartphones are a promising and cost-effective tool for experimentation in physics education, but many experiments face practical problems. Often the phone is inaccessible during the experiment and the data usually needs to be analyzed subsequently on a computer. We address both problems by introducing a new app, called "phyphox", which is specifically designed for utilizing experiments in physics teaching. The app is free and designed to offer the same set of features on Android and iOS.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Ballistic transport exceeding 28 μm in CVD grown graphene

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Modeling charge relaxation in graphene quantum dots induced by electron-phonon interaction

We study and compare two analytic models of graphene quantum dots for calculating charge relaxation times due to electron-phonon interaction. Recently, charge relaxation processes in graphene quantum dots have been probed experimentally and here we provide a theoretical estimate of relaxations times. By comparing a model with pure edge confinement to a model with electrostatic confinement, we find that the latter features much larger relaxation times. Interestingly, relaxation times in electrostatically defined quantum dots are predicted to exceed the experimentally observed lower bound of ~100 ns.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited Al$_2$O$_3$ spin injection and detection barriers

We present spin transport studies on bi- and trilayer graphene non-local spin-valves which have been fabricated by a bottom-up fabrication method. By this technique, spin injection electrodes are first deposited onto Si$^{++}$/SiO$_2$ substrates with subsequent mechanical transfer of a graphene/hBN heterostructure. We showed previously that this technique allows for nanosecond spin lifetimes at room temperature combined with carrier mobilities which exceed 20,000 cm$^2$/(Vs). Despite strongly enhanced spin and charge transport properties, the MgO injection barriers in these devices exhibit conducting pinholes which still limit the measured spin lifetimes. We demonstrate that these pinholes can be partially diminished by an oxygen treatment of a trilayer graphene device which is seen by a strong increase of the contact resistance area products of the Co/MgO electrodes. At the same time, the spin lifetime increases from 1 ns to 2 ns. We believe that the pinholes partially result from the directional growth in molecular beam epitaxy. For a second set of devices, we therefore used atomic layer deposition of Al$_2$O$_3$ which offers the possibility to isotropically deposit more homogeneous barriers. While the contacts of the as-fabricated bilayer graphene devices are non-conductive, we can partially break the oxide barriers by voltage pulses. Thereafter, the devices also exhibit nanosecond spin lifetimes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Probing electronic lifetimes and phonon anharmonicities in high-quality chemical vapor deposited graphene by magneto-Raman spectroscopy

We present a magneto-Raman study on high-quality single-layer graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride by a dry transfer technique. By analyzing the Raman D, G, and 2D peaks, we find that the structural quality of the samples is comparable to state-of-the-art exfoliated graphene flakes. From B field dependent Raman measurements, we extract the broadening and associated lifetime of the G peak due to anharmonic effects. Furthermore, we determine the decay width and lifetime of Landau level (LL) transitions from magneto-phonon resonances as a function of laser power. At low laser power, we find a minimal decay width of 140 1/cm highlighting the high electronic quality of the CVD-grown graphene. At higher laser power, we observe an increase of the LL decay width leading to a saturation with the corresponding lifetime saturating at a minimal value of 18 fs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge charier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of- the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/pHz making our graphene sensors highly interesting for industrial applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature

We present a new fabrication method of graphene spin-valve devices which yields enhanced spin and charge transport properties by improving both the electrode-to-graphene and graphene-to-substrate interface. First, we prepare Co/MgO spin injection electrodes onto Si$^{++}$/SiO$_2$. Thereafter, we mechanically transfer a graphene-hBN heterostructure onto the prepatterned electrodes. We show that room temperature spin transport in single-, bi- and trilayer graphene devices exhibit nanosecond spin lifetimes with spin diffusion lengths reaching 10$μ$m combined with carrier mobilities exceeding 20,000 cm$^2$/Vs.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices

We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $μ$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $μ$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Excited States in Bilayer Graphene Double Quantum Dots

We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a wide energy range is in good agreement with the expected single-particle energy spacing in bilayer graphene quantum dots. Finally, we investigate the evolution of the electronic excited states in a parallel magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Local transport measurements on epitaxial graphene

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip STM/SEM the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing relaxation times in graphene quantum dots

Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively investigated with respect to their excitation spectrum, spin-filling sequence, and electron-hole crossover. However their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular regarding the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here, we report on pulsed-gate transient spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design, allowing to tune the tunnelling barriers individually down to the low MHz regime and to monitor their asymmetry with integrated charge sensors. Measuring the transient currents through electronic excited states, we estimate lower limit of charge relaxation times on the order of 60-100 ns.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Reducing disorder in graphene nanoribbons by chemical edge modification

We present electronic transport measurements on etched graphene nanoribbons on silicon dioxide before and after a short hydrouoric acid (HF) treatment. We report on changes in the transport properties, in particular, in terms of a decreasing transport gap and a reduced doping level after HF dipping. Interestingly, the effective energy gap is nearly unaffected by the HF treatment. Additional measurements on a graphene nanoribbon with lateral graphene gates support strong indications that the HF significantly modifies the edges of the investigated nanoribbons leading to a significantly reduced disorder potential in these graphene nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Charge detection in a bilayer graphene quantum dot

We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot even in regimes where the quantum dot Coulomb peaks cannot be measured by conventional techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Raman spectroscopy on etched graphene nanoribbons

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Readout of carbon nanotube vibrations based on spin-phonon coupling

We propose a scheme for spin-based detection of the bending motion in suspended carbon-nanotubes, using the curvature-induced spin-orbit interaction. We show that the resulting effective spin-phonon coupling can be used to down-convert the high-frequency vibration-modulated spin-orbit field to spin-flip processes at a much lower frequency. This vibration-induced spin-resonance can be controlled with an axial magnetic field. We propose a Pauli spin blockade readout scheme and predict that the leakage current shows pronounced peaks as a function of the external magnetic field. Whereas the resonant peaks allow for frequency readout, the slightly off-resonant current is sensitive to the vibration amplitude.

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preprint2011arXiv

Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot

We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points. We extract a mutual capacitive inter-dot coupling in the range of 2 - 6 meV and an inter-dot tunnel coupling on the order of 1.5 μeV.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

Electronic states and vibrons in carbon nanotube quantum dots have in general different location and size. As a consequence, the conventional Anderson-Holstein model, coupling vibrons to the dot total charge only, may no longer be appropriated in general. Here we explicitly address the role of the spatial fluctuations of the electronic density, yielding space-dependent Franck-Condon factors. We discuss the consequent marked effects on transport which are compatible with recent measurements. This picture can be relevant for tunneling experiments in generic nano-electromechanical systems.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Selective Chemical Modification of Graphene surfaces: Distinction between Single and Bilayer Graphene

Graphene modifications with oxygen or hydrogen are well known in contrast to carbon attachment to the graphene lattice. The chemical modification of graphene sheets with aromatic diazonium ions (carbon attachment) is analyzed by confocal Raman spectroscopy. The temporal and spatial evolution of surface adsorbed species allowed accurate tracking of the chemical reaction and identification of intermediates. The controlled transformation of sp2 to sp3 carbon proceeds in two separate steps. The presented derivatization is selective for single layer graphene and allows controlled transformation of adsorbed diazonium reagents into covalently bound surface derivatives with enhanced reactivity at the edge of single layer graphene. On bi-layer graphene the derivatization proceeds to an adsorbed intermediate without further reaction to form a covalent attachment on the carbon surface.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Aharonov-Bohm effect in a side-gated graphene ring

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of pi in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be well interpreted within existing models for 'dirty metals' giving a phase coherence length of the order of 1 micrometer at a temperature of 500mK.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Transport through open quantum dots: making semiclassics quantitative

We investigate electron transport through clean open quantum dots (quantum billiards). We present a semiclassical theory that allows to accurately reproduce quantum transport calculations. Quantitative agreement is reached for individual energy and magnetic field dependent elements of the scattering matrix. Two key ingredients are essential: (i) inclusion of pseudo-paths which have the topology of linked classical paths resulting from diffraction in addition to classical paths and (ii) a high-level approximation to diffractive scattering. Within this framework of the pseudo-path semiclassical approximation (PSCA), typical shortcomings of semiclassical theories such as violation of the anti-correlation between reflection and transmission and the overestimation of conductance fluctuations are overcome. Beyond its predictive capabilities the PSCA provides deeper insights into the quantum-to-classical crossover.

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