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Ballistic transport exceeding 28 μm in CVD grown graphene

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

preprint2016arXivOpen access
Luca BanszerusMichael SchmitzStephan EngelsMatthias GoldscheKenji WatanabeTakashi TaniguchiBernd BeschotenChristoph Stampfer
cond-mat.mes-hall
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Open access8 authors1 topic
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Luca BanszerusMichael SchmitzStephan EngelsMatthias GoldscheKenji WatanabeTakashi TaniguchiBernd BeschotenChristoph Stampfer

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