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Matthew Yankowitz

Matthew Yankowitz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

12 published item(s)

preprint2026arXiv

Pervasive spin-triplet superconductivity in rhombohedral graphene

Magnetic fields typically suppress superconductivity once the Zeeman energy exceeds the pairing gap, unless mechanisms such as unconventional pairing, strong spin-orbit coupling, or intrinsic magnetism intervene. Several graphene platforms realize such mitigating routes, exhibiting superconductivity resilient to magnetic fields. Here we report superconductivity in rhombohedral heptalayer graphene that is both induced and stabilized by in-plane magnetic field ($B_{\parallel}$), with critical fields far beyond the Pauli paramagnetic limit. The superconductivity spans a wide gate range and emerges from a sharp zero-field resistive ridge that tracks approximately constant conduction band filling. The presence of zero-field superconductivity and the evolution of the critical temperature with $B_{\parallel}$ are highly gate sensitive. We also observe a weak superconducting diode effect in several distinct regimes within the superconducting phase, including nearby to an integer quantum anomalous Hall state generated by a boron nitride moiré superlattice, indicating a potential coexistence of valley imbalance and superconductivity. These results establish several intriguing new properties of spin-triplet, field-induced superconductivity in a thick rhombohedral graphene stack.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Abrupt switching of the anomalous Hall effect by field-rotation in nonmagnetic ZrTe5

The Hall effect arises when time reversal symmetry is broken by either intrinsic magnetism or an external magnetic field. The latter contribution dominates in non-magnetic materials, in which the angular dependence of the Hall effect is typically a smooth cosine function because only the out-of-plane projection of the field generates the in-plane transverse motion of electrons. Here, we report the observation of an abrupt switching of the Hall effect by field rotation in a non-magnetic material, ZrTe5. The angular dependence of the Hall resistivity approaches a signum function, persisting down to an extremely low field of 0.03 T. By varying the carrier density of ZrTe5 over three orders of magnitude, we show that this singular behavior is due to the anomalous Hall effect generated by the ultra-dilute massive Dirac carriers in the quantum limit of Pauli paramagnetism when the Zeeman energy exceeds the Fermi energy. Our results elucidate the origin of the anomalous Hall effect in ZrTe5, arising owing to the spin-polarized massive Dirac electrons rather than the separation of Weyl nodes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unraveling intrinsic flexoelectricity in twisted double bilayer graphene

Moiré superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polarizations was reported in twisted bilayer graphene (tBG), though theoretically predicted value is $180^{\circ}$. Here we developed a methodology to extract intrinsic moiré flexoelectricity using twisted double bilayer graphene (tDBG) as a model system, probed by lateral PFM. For small twist angle samples, we found that a vectorial decomposition is essential to recover the small intrinsic flexoelectric response at domain walls from a large background signal. The obtained three-fold symmetry of commensurate domains with significant flexoelectric response at domain walls is fully consistent with our theoretical calculations. Incommensurate domains in tDBG with relatively large twist angles can also be observed by this technique. Our work provides a general strategy for unraveling intrinsic flexoelectricity in van der Waals moiré superlattices while providing insights into engineered symmetry breaking in centrosymmetric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Unusual magnetotransport in twisted bilayer graphene

We present transport measurements of bilayer graphene with 1.38° interlayer twist and apparent additional alignment to its hexagonal boron nitride cladding. As with other devices with twist angles substantially larger than the magic angle of 1.1°, we do not observe correlated insulating states or band reorganization. However, we do observe several highly unusual behaviors in magnetotransport. For a large range of densities around half filling of the moiré bands, magnetoresistance is large and quadratic. Over these same densities, the magnetoresistance minima corresponding to gaps between Landau levels split and bend as a function of density and field. We reproduce the same splitting and bending behavior in a simple tight-binding model of Hofstadter's butterfly on a square lattice with anisotropic hopping terms. These features appear to be a generic class of experimental manifestations of Hofstadter's butterfly and may provide insight into the emergent states of twisted bilayer graphene.

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preprint2020arXiv

Tunable correlation-driven symmetry breaking in twisted double bilayer graphene

A variety of correlated phases have recently emerged in select twisted van der Waals (vdW) heterostructures owing to their flat electronic dispersions. In particular, heterostructures of twisted double bilayer graphene (tDBG) manifest electric field-tunable correlated insulating (CI) states at all quarter fillings of the conduction band, accompanied by nearby states featuring signatures suggestive of superconductivity. Here, we report electrical transport measurements of tDBG in which we elucidate the fundamental role of spontaneous symmetry breaking within its correlated phase diagram. We observe abrupt resistivity drops upon lowering the temperature in the correlated metallic phases neighboring the CI states, along with associated nonlinear $I$-$V$ characteristics. Despite qualitative similarities to superconductivity, concomitant reversals in the sign of the Hall coefficient instead point to spontaneous symmetry breaking as the origin of the abrupt resistivity drops, while Joule heating appears to underlie the nonlinear transport. Our results suggest that similar mechanisms are likely relevant across a broader class of semiconducting flat band vdW heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Local Spectroscopic Characterization of Spin and Layer Polarization in WSe$_2$

We report scanning tunneling microscopy (STM) and spectroscopy (STS) measurements of monolayer and bilayer WSe$_2$. We measure a band gap of 2.21 $\pm$ 0.08 eV in monolayer WSe$_2$, which is much larger than the energy of the photoluminescence peak indicating a large excitonic binding energy. We additionally observe significant electronic scattering arising from atomic-scale defects. Using Fourier transform STS (FT-STS), we map the energy versus momentum dispersion relations for monolayer and bilayer WSe$_2$. Further, by tracking allowed and forbidden scattering channels as a function of energy we infer the spin texture of both the conduction and valence bands. We observe a large spin-splitting of the valence band due to strong spin-orbit coupling, and additionally observe spin-valley-layer coupling in the conduction band of bilayer WSe$_2$.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Band Structure Mapping of Bilayer Graphene via Quasiparticle Scattering

A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as $γ_0 = 3.1$ eV, $γ_1 = 0.39$ eV, and $γ_4 = 0.22$ eV.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electric Field Control of Soliton Motion and Stacking in Trilayer Graphene

The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as temperature or pressure. In the case of trilayer graphene, there are two common stacking configurations (Bernal and rhombohedral) which exhibit very different electronic properties. In graphene flakes with both stacking configurations, the region between them consists of a localized strain soliton where the carbon atoms of one graphene layer shift by the carbon-carbon bond distance. Here we show the ability to move this strain soliton with a perpendicular electric field and hence control the stacking configuration of trilayer graphene with only an external voltage. Moreover, we find that the free energy difference between the two stacking configurations scales quadratically with electric field, and thus rhombohedral stacking is favored as the electric field increases. This ability to control the stacking order in graphene opens the way to novel devices which combine structural and electrical properties.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Graphene on Hexagonal Boron Nitride

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices, as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN for graphene as well as for components in novel graphene-based device heterostructures. Additionally, their semiconducting nature permits dynamic gate voltage control over the interaction strength with graphene. Through local scanning probe measurements we find that crystalline defects intrinsic to TMDs induce scattering in graphene which results in significant degradation of the heterostructure quality, particularly compared to similar graphene on hBN devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Local Spectroscopy of the Electrically Tunable Band Gap in Trilayer Graphene

The stacking order degree of freedom in trilayer graphene plays a critical role in determining the existence of an electric field tunable band gap. We present spatially-resolved tunneling spectroscopy measurements of dual gated Bernal (ABA) and rhombohedral (ABC) stacked trilayer graphene devices. We demonstrate that while ABA trilayer graphene remains metallic, ABC trilayer graphene exhibits a widely tunable band gap as a function of electric field. However, we find that charged impurities in the underlying substrate cause substantial spatial fluctuation of the gap size. Our work elucidates the microscopic behavior of trilayer graphene and its consequences for macroscopic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride

The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal lattice known as Brillouin zone boundaries. However, in the case of massless Dirac fermions, it has been predicted that the chirality of the charge carriers prevents the opening of a band gap and instead new Dirac points appear in the electronic structure of the material. Graphene on hexagonal boron nitride (hBN) exhibits a rotation dependent Moiré pattern. In this letter, we show experimentally and theoretically that this Moiré pattern acts as a weak periodic potential and thereby leads to the emergence of a new set of Dirac points at an energy determined by its wavelength. The new massless Dirac fermions generated at these superlattice Dirac points are characterized by a significantly reduced Fermi velocity. The local density of states near these Dirac cones exhibits hexagonal modulations indicating an anisotropic Fermi velocity.

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