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Bing Huang

Bing Huang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.chem-phArtificial IntelligenceMachine Learningphysics.comp-phcond-mat.str-elcond-mat.supr-concs.CYeess.SPeess.SYNetworking and Internet ArchitectureRoboticsSystems and Control

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Published work

35 published item(s)

preprint2026arXiv

Two-dimensional Intrinsic Janus Structures: Design Principle and Anomalous Nonlinear Optics

Two-dimensional Janus structures have garnered rapidly growing attention across multidisciplinary fields. However, despite extensive theoretical and experimental efforts, a principle for designing intrinsic Janus materials remains elusive. Here, we propose a first-principles alloy theory based on cluster expansion, incorporating a strong repulsive interaction of a cation-mediated anion-pair cluster and refined short-range cluster-cluster competitions, to unravel the formation mechanism of intrinsic Janus structures with a distorted 1T phase among numerous competing phases. Our theory not only explains why intrinsic Janus structures are accidentally observed in RhSeCl and BiTeI which are composed of alloyed elements from different groups, but also accurately predicts a wide range of 1T-like intrinsic Janus materials that are ready for synthesis. Intriguingly, as demonstrated in the case of RhSeCl, we reveal that intrinsic Janus materials can exhibit anomalous second-harmonic generation (SHG) with a distinct quantum geometric effect, originating from strong lattice and chemical-potential mirror asymmetry. Furthermore, a novel skin effect unexpectedly emerges in finite-thickness RhSeCl, accompanied by a hidden SHG effect within the bulk region. Our theory paves the way for the ab initio design of intrinsic Janus materials, significantly accelerating progress in Janus science.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Layer-number-dependent spin Hall effects in transition metal monocarbides $M_{2}\rm{C}$ ($M=\rm{V}, \rm{Nb}, \rm{Ta}$)

The recent discovery of strong spin Hall effects (SHE) in 2D layered topological semimetals has attracted intensive attention due to its exotic electronic properties and potential applications in spintronic devices. In this paper, we systematically study the topological properties and intrinsic SHE of layered transition metal carbides $M_{2}\rm{C}$ ($M=\rm{V}, \rm{Nb}, \rm{Ta}$). The results show that both bulk and monolayer $M_{2}\rm{C}$ have symmetry-protected nodal points (NPs) and lines (NLs) originating from the $d$ band crossing near the Fermi level ($E_F$). The inclusion of SOC breaks the degeneracy of NLs and NPs, contributing to large spin Hall conductivity (SHC) up to $\sim$1100 and $\sim$200 $(\hbar / e)(Ω\mathrm{cm})^{-1}$ for bulk and monolayer Ta$_{2}$C, respectively. Remarkably, we find that magnitude of SHC exhibits a significant enhancement by increasing the layer number. For eight-layer Ta$_{2}$C, the maximum value of SHC can reach up to $\sim$600 $(\hbar / e)(Ω\mathrm{cm})^{-1}$, comparable to many reported 3D topological materials. Analysis of spin Berry curvature reveals that the large SHC originates from layer-number-dependent nodal line structure near the $E_F$, in which the repeated crossover between valence and conduction bands creates large amounts of NPs along the $Γ\rm{-K}$ route. Our findings not only provide a new platform for experimental research of low-dimensional SHE, but also suggest an effective way of realizing giant SHE by controlling layer thickness.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Light-induced Magnetic Phase Transition in van der Waals Antiferromagnets

Based on a simple tight-binding model, we propose a general theory of light-induced magnetic phase transition (MPT) in antiferromagnets based on the general conclusion that the bandgap of antiferromagnetic (AFM) phase is usually larger than that of ferromagnetic (FM) one in a given system. Light-induced electronic excitation prefers to stabilize the FM state over the AFM one, and once the critical photocarrier concentration (α_c) is reached, an MPT from AFM phase to FM phase takes place. This theory has been confirmed by performing first-principles calculations on a series of two-dimensional (2D) van der Waals (vdW) antiferromagnets and a linear relationship between α_c and the intrinsic material parameters is obtained. Importantly, our conclusion is still valid even considering the strong exciton effects during photoexcitation. Our general theory provides new ideas to realize reversible read-write operations for future memory devices.

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preprint2022arXiv

Stability of Superconducting Nd0.8Sr0.2NiO2 Thin Films

The discovery of superconducting states in the nickelate thin film with infinite-layer structure has paved a new way for studying unconventional superconductivity. So far, research in this field is still very limited due to difficulties in sample preparation. Here we report on the successful preparation of superconducting Nd0.8Sr0.2NiO2 thin film (Tc = 8.0 - 11.1 K) and study the stability of such films in ambient environment, water and under electrochemical conditions. Our work demonstrates that the superconducting state of Nd0.8Sr0.2NiO2 is remarkably stable, which can last for at least 47 days continuous exposure to air at 20 degree Celsius and 35% relative humidity. Further we show the superconductivity disappears after being immersed in de-ionized water at room temperature for 5 hours. Surprisingly, it can also survive under ionic liquid gating conditions with applied voltage up to 4 V, which is even more stable than conventional perovskite complex oxides.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Temperature Effect on Charge-state Transition Levels of Defects in Semiconductors

Defects are crucial in determining the overall physical properties of semiconductors. Generally, the charge-state transition level (TEL), one of the key physical quantities that determines the dopability of defects in semiconductors, is temperature dependent. However, little is known about the temperature dependence of TEL, and, as a result, almost all existing defect theories in semiconductors are built on a temperature-independent approximation. In this article, by deriving the basic formulas for temperature-dependent TEL, we have established two fundamental rules for the temperature dependence of TEL in semiconductors. Based on these rules, surprisingly, it is found that the temperature dependences of TEL for different defects are rather diverse: it can become shallower, deeper, or stay unchanged. This defect-specific behavior is mainly determined by the synergistic or opposing effects between free energy corrections (determined by the local volume change around the defect during a charge-state transition) and band edge changes (which differ for different semiconductors). These basic formulas and rules, confirmed by a large number of state-of-the-art temperature-dependent defect calculations in GaN, may potentially be widely adopted as guidelines for understanding or optimizing doping behaviors in semiconductors at finite temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Dirac Nodal Lines and Nodal Loops in a Topological Kagome Superconductor CsV$_3$Sb$_5$

The intertwining of charge order, superconductivity and band topology has promoted the AV$_3$Sb$_5$ (A=K, Rb, Cs) family of materials to the center of attention in condensed matter physics. Underlying those mysterious macroscopic properties such as giant anomalous Hall conductivity (AHC) and chiral charge density wave is their nontrivial band topology. While there have been numerous experimental and theoretical works investigating the nontrivial band structure and especially the van Hove singularities, the exact topological phase of this family remains to be clarified. In this work, we identify CsV$_3$Sb$_5$ as a Dirac nodal line semimetal based on the observation of multiple Dirac nodal lines and loops close to the Fermi level. Combining photoemission spectroscopy and density functional theory, we identify two groups of Dirac nodal lines along $k_z$ direction and one group of Dirac nodal loops in the A-H-L plane. These nodal loops are located at the Fermi level within the instrumental resolution limit. Importantly, our first-principle analyses indicate that these nodal loops may be a crucial source of the mysterious giant AHC observed. Our results not only provide a clear picture to categorize the band structure topology of this family of materials, but also suggest the dominant role of topological nodal loops in shaping their transport behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Fermi softness: a local perspective on surface reactivity

Understanding how electronic structure determines the reactivity of solid surface, is a central topic of modern surface science. This is mostly commonly done through some intermediate quantity termed descriptor. However, such descriptors are very scarce for solid surface compared to for molecule, likely due to their significantly more complex electronic structure (cf. molecules). Here we elaborate on the theory of a concept dubbed "Fermi softness", which distinguishes itself by enabling prediction of surface reactivity with spatial as well as atomic resolution. Other pertinent concepts and descriptors are also mentioned so as to make the treatment comprehensive.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Role of Interlayer Coupling in the Second Harmonic Generation of Bilayer Transition-metal Dichalcogenides

Little is known about the role of weak interlayer coupling in the second harmonic generation (SHG) effects of two-dimensional van der Waals (vdW) systems. In this article, taking homo-bilayer $MoS_2/MoS_2$ and hetero-bilayer $MoS_2/MoSe_2$ as typical examples, we have systemically investigated their SHG susceptibilities as a function of interlayer hopping strength using first-principles calculations. For the SHG at zero frequency limit of both $MoS_2/MoS_2$ and $MoS_2/MoSe_2$, although the increase of tint can increase the intensities of interlayer optical transitions (IOT), the increased band repulsion around G point can eventually decrease their SHG values; the larger the tint, the smaller the SHG response. For the SHG spectra of $MoS_2/MoSe_2$ in the low photon-energy region, opposite to the $MoS_2/MoS_2$, their peak values are very sensitive to the variable tint, due to the strong $t_{int}$-dependent IOT dominating in the band edge; the larger the tint, the larger the SHG. For the SHG of $MoS_2/MoS_2$ in the high photon-energy region, comparing to the $MoS_2/MoSe_2$, their peak values will decrease in a much more noticeable way as the $t_{int}$ increases, due to the larger reduction of band nesting effect. Our study not only can successfully explain the puzzling experimental observations for the different SHG responses in different bilayer transition-metal dichalcogenides under variable tint, but also may provide a general understanding for designing controllable the SHG effects in the vdW systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Configuration Based Pumped Storage Hydro Model in MISO Day-Ahead Market

Pumped storage hydro units (PSHU) can provide flexibility to power systems. This becomes particularly valuable in recent years with the increasing shares of intermittent renewable resources. However, due to emphasis on thermal generation in the current market practices, the flexibility from PSHUs have not been fully explored and utilized. This paper proposes a configuration based pumped storage hydro (PSH) model for the day-ahead market, in order to enhance the use of PSH resources in the system. A strategic design of incorporating and fully optimizing PSHUs in the day-ahead market is presented. We show the compactness of the proposed model. Numerical studies are presented in an illustrative test system and the Midcontinent Independent System Operator (MISO) system.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Cognitive Amplifier for Internet of Things

We present a Cognitive Amplifier framework to augment things part of an IoT, with cognitive capabilities for the purpose of improving life convenience. Specifically, the Cognitive Amplifier consists of knowledge discovery and prediction components. The knowledge discovery component focuses on finding natural activity patterns considering their regularity, variations, and transitions in real life setting. The prediction component takes the discovered knowledge as the base for inferring what, when, and where the next activity will happen. Experimental results on real-life data validate the feasibility and applicability of the proposed approach.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Decision-making Strategy on Highway for Autonomous Vehicles using Deep Reinforcement Learning

Autonomous driving is a promising technology to reduce traffic accidents and improve driving efficiency. In this work, a deep reinforcement learning (DRL)-enabled decision-making policy is constructed for autonomous vehicles to address the overtaking behaviors on the highway. First, a highway driving environment is founded, wherein the ego vehicle aims to pass through the surrounding vehicles with an efficient and safe maneuver. A hierarchical control framework is presented to control these vehicles, which indicates the upper-level manages the driving decisions, and the lower-level cares about the supervision of vehicle speed and acceleration. Then, the particular DRL method named dueling deep Q-network (DDQN) algorithm is applied to derive the highway decision-making strategy. The exhaustive calculative procedures of deep Q-network and DDQN algorithms are discussed and compared. Finally, a series of estimation simulation experiments are conducted to evaluate the effectiveness of the proposed highway decision-making policy. The advantages of the proposed framework in convergence rate and control performance are illuminated. Simulation results reveal that the DDQN-based overtaking policy could accomplish highway driving tasks efficiently and safely.

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preprint2020arXiv

Dictionary of 140k GDB and ZINC derived AMONs

We present all {\bf A}mons for {\bf G}DB and {\bf Z}inc data-bases using no more than 7 non-hydrogen atoms (AGZ7)---a calculated organic chemistry building-block dictionary based on the AMON approach [Huang and von Lilienfeld, {\em Nature Chemistry} (2020)]. AGZ7 records Cartesian coordinates of compositional and constitutional isomers, as well as properties for $\sim$140k small organic molecules obtained by systematically fragmenting all molecules of Zinc and the majority of GDB17 into smaller entities, saturating with hydrogens, and containing no more than 7 heavy atoms (excluding hydrogen atoms). AGZ7 cover the elements \{H, B, C, N, O, F, Si, P, S, Cl, Br, Sn and I\} and includes optimized geometries, total energy and its decomposition, Mulliken atomic charges, dipole moment vectors, quadrupole tensors, electronic spatial extent, eigenvalues of all occupied orbitals, LUMO, gap, isotropic polarizability, harmonic frequencies, reduced masses, force constants, IR intensity, normal coordinates, rotational constants, zero-point energy, internal energy, enthalpy, entropy, free energy, and heat capacity (all at ambient conditions) using B3LYP/cc-pVTZ (pseudopotentials were used for Sn and I) level of theory. We exemplify the usefulness of this data set with AMON based machine learning models of total potential energy predictions of seven of the most rigid GDB-17 molecules.

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preprint2020arXiv

Dueling Deep Q Network for Highway Decision Making in Autonomous Vehicles: A Case Study

This work optimizes the highway decision making strategy of autonomous vehicles by using deep reinforcement learning (DRL). First, the highway driving environment is built, wherein the ego vehicle, surrounding vehicles, and road lanes are included. Then, the overtaking decision-making problem of the automated vehicle is formulated as an optimal control problem. Then relevant control actions, state variables, and optimization objectives are elaborated. Finally, the deep Q-network is applied to derive the intelligent driving policies for the ego vehicle. Simulation results reveal that the ego vehicle could safely and efficiently accomplish the driving task after learning and training.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enabling Edge Cloud Intelligence for Activity Learning in Smart Home

We propose a novel activity learning framework based on Edge Cloud architecture for the purpose of recognizing and predicting human activities. Although activity recognition has been vastly studied by many researchers, the temporal features that constitute an activity, which can provide useful insights for activity models, have not been exploited to their full potentials by mining algorithms. In this paper, we utilize temporal features for activity recognition and prediction in a single smart home setting. We discover activity patterns and temporal relations such as the order of activities from real data to develop a prompting system. Analysis of real data collected from smart homes was used to validate the proposed method.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum machine learning using atom-in-molecule-based fragments selected on-the-fly

First principles based exploration of chemical space deepens our understanding of chemistry, and might help with the design of new materials or experiments. Due to the computational cost of quantum chemistry methods and the immens number of theoretically possible stable compounds comprehensive in-silico screening remains prohibitive. To overcome this challenge, we combine atoms-in-molecules based fragments, dubbed "amons" (A), with active learning in transferable quantum machine learning (ML) models. The efficiency, accuracy, scalability, and transferability of resulting AML models is demonstrated for important molecular quantum properties, such as energies, forces, atomic charges NMR shifts, polarizabilities, and for systems ranging from organic molecules over 2D materials and water clusters to Watson-Crick DNA base-pairs and even ubiquitin. Conceptually, the AML approach extends Mendeleev's table to effectively account for chemical environments, which allows the systematic reconstruction of many chemistries from local building blocks.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Service mining for Internet of Things

A service mining framework is proposed that enables discovering interesting relationships in Internet of Things services bottom-up. The service relationships are modeled based on spatial-temporal aspects, environment, people, and operation. An ontology-based service model is proposed to describe services. We present a set of metrics to evaluate the interestingness of discovered service relationships. Analytical and simulation results are presented to show the effectiveness of the proposed evaluation measures.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Giant Enhancement of Solid Solubility in Monolayer BNC Alloys by Selective Orbital Coupling

Solid solubility (SS) is one of the most important features of alloys, which is usually difficult to be largely tuned in the entire alloy concentrations by external approaches. Some alloys that were supposed to have promising physical properties could turn out to be much less useful because of their poor SS, e.g., the case for monolayer BNC [(BN)1-x(C2)x] alloys. Until now, an effective approach on significantly enhancing SS of (BN)1-x(C2)x in the entire x is still lacking. In this article, a novel mechanism of selective orbital coupling between high energy wrong-bond states and surface states mediated by the specific substrate has been proposed to stabilize the wrong-bonds and in turn significantly enhance the SS of (BN)1-x(C2)x alloys. Surprisingly, we demonstrate that five ordered alloys, exhibiting variable direct quasi-particle bandgaps from 1.35 to 3.99 eV, can spontaneously be formed at different x when (BN)1-x(C2)x is grown on hcp-phase Cr. Interestingly, the optical transitions around the band edges in these ordered alloys, accompanied by largely tunable exciton binding energies of ~1 eV at different x, are significantly strong due to their unique band structures. Importantly, the disordered (BN)1-x(C2)x alloys, exhibiting fully tunable bandgaps from 0 to ~6 eV in the entire x, can be formed on Cr substrate at the miscibility temperature of ~1200 K, which is greatly reduced compared to that of 4500~5600 K in free-standing form or on other substrates. Our discovery not only may resolve the long-standing SS problem of BNC alloys, but also could significantly extend the applications of BNC alloys for various optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Realization of Lieb Lattice in Covalent-organic Frameworks with Tunable Topology and Magnetism

Lieb lattice, a two-dimensional edge-depleted square lattice, has been predicted to host various exotic electronic properties due to its unusual band structure, i.e., Dirac cone intersected by a flat band (Dirac-flat bands). Until now, although a few artificial Lieb lattices have been discovered in experiments, the realization of a Lieb lattice in a real material is still unachievable. In this article, based on tight-binding modeling and first-principles calculations, we predict that the two covalent organic frameworks (COFs), i.e., sp2C-COF and sp2N-COF, which have been synthesized in the recent experiments, are actually the first two material realizations of organic-ligand-based Lieb lattice. It is found that the lattice distortion can govern the bandwidth of the Dirac-flat bands and in turn determine its electronic instability against spontaneous spin-polarization during carrier doping. The spin-orbit coupling effects could drive these Dirac-flat bands in a distorted Lieb lattice presenting nontrivial topological properties, which depend on the position of Fermi level. Interestingly, as the hole doping concentration increases, the sp2C-COF can experience the phase transitions from a paramagnetic state to a ferromagnetic one and then to a Néel antiferromagnetic one. Our findings not only confirm the first material realization of Lieb lattice in COFs, but also offer a possible way to achieve tunable topology and magnetism in d- (f-) orbital-free organic lattices.

0 citations0 reviewsNo code linkedOpen access
preprint2017arXiv

Machine learning prediction errors better than DFT accuracy

We investigate the impact of choosing regressors and molecular representations for the construction of fast machine learning (ML) models of thirteen electronic ground-state properties of organic molecules. The performance of each regressor/representation/property combination is assessed using learning curves which report out-of-sample errors as a function of training set size with up to $\sim$117k distinct molecules. Molecular structures and properties at hybrid density functional theory (DFT) level of theory used for training and testing come from the QM9 database [Ramakrishnan et al, {\em Scientific Data} {\bf 1} 140022 (2014)] and include dipole moment, polarizability, HOMO/LUMO energies and gap, electronic spatial extent, zero point vibrational energy, enthalpies and free energies of atomization, heat capacity and the highest fundamental vibrational frequency. Various representations from the literature have been studied (Coulomb matrix, bag of bonds, BAML and ECFP4, molecular graphs (MG)), as well as newly developed distribution based variants including histograms of distances (HD), and angles (HDA/MARAD), and dihedrals (HDAD). Regressors include linear models (Bayesian ridge regression (BR) and linear regression with elastic net regularization (EN)), random forest (RF), kernel ridge regression (KRR) and two types of neural net works, graph convolutions (GC) and gated graph networks (GG). We present numerical evidence that ML model predictions deviate from DFT less than DFT deviates from experiment for all properties. Furthermore, our out-of-sample prediction errors with respect to hybrid DFT reference are on par with, or close to, chemical accuracy. Our findings suggest that ML models could be more accurate than hybrid DFT if explicitly electron correlated quantum (or experimental) data was available.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Steric effects of CO2 binding to transition metal-benzene complexes: a first-principles study

Using density functional theory (DFT) calculations, we investigated the adsorption of CO2 molecules on 3d transition metal (TM)-benzene complexes. Our calculations show that the maximum number of CO2 molecules adsorbable on Sc or Ti atoms is three, but the 18-electron rule predicts it should be four. The 18-electron rule is generally successful in predicting the maximum H2 adsorption number for TM atoms including Sc or Ti atoms. We found that the 18-electron rule fails to correctly predict CO2 binding on Sc- or Ti-benzene complexes because CO2 binding, in contrast to H2 binding, requires additional consideration for steric hindrance due to the large bond length of CO2. We calculated the occupation function for CO2 using the Tolman cone angle, which shows that three CO2 molecules fully occupy the available space around Sc- and Ti-benzene complexes. This estimation is the same maximum CO2 adsorption number predicted by DFT calculations. Therefore, we propose that the occupation function for CO2 using the Tolman cone angle is an efficient model for evaluating steric hindrance of CO2 adsorption on a surface.

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preprint2016arXiv

Understanding molecular representations in machine learning: The role of uniqueness and target similarity

The predictive accuracy of Machine Learning (ML) models of molecular properties depends on the choice of the molecular representation. Based on the postulates of quantum mechanics, we introduce a hierarchy of representations which meet uniqueness and target similarity criteria. To systematically control target similarity, we rely on interatomic many body expansions, as implemented in universal force-fields, including Bonding, Angular, and higher order terms (BA). Addition of higher order contributions systematically increases similarity to the true potential energy and predictive accuracy of the resulting ML models. We report numerical evidence for the performance of BAML models trained on molecular properties pre-calculated at electron-correlated and density functional theory level of theory for thousands of small organic molecules. Properties studied include enthalpies and free energies of atomization, heatcapacity, zero-point vibrational energies, dipole-moment, polarizability, HOMO/LUMO energies and gap, ionization potential, electron affinity, and electronic excitations. After training, BAML predicts energies or electronic properties of out-of-sample molecules with unprecedented accuracy and speed.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Structural stability of lattice-matched heterovalent semiconductor superlattices

Lattice-matched heterovalent alloys and superlattices have some unique physical properties. For example, their band gap can change by a large amount without significant change in their lattice constants, thus they have great potential for optelectronic applications. Using first-principles total energy calculation and Monte Carlo simulation as well as lattice harmonic expansion, we systematically study the stability of the heterovalent superlattices. We show that the chemical trend of stability of lattice-matched heterovalent superlattices is significantly different from lattice-mismatched isovalent superlattices, because for lattice-mismatched isovalent superlattices the stability is mostly determined by strain, whereas for lattice-matched nonisovalent superlattices the interfacial energy depend not only on the bond energy but also on the Coulomb energy derived from donor- and acceptor-like wrong bonds. In the short-period heterovalent superlattices, the abrupt [111] interface has the lowest energy even though it is polar, whereas for the long-period heterovalent superlattices, the [110] interface has the lowest energy. On the contrary, [201] superlattices are usually the most stable for lattice-mismatched isovalent superlattices.

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preprint2012arXiv

Ordered Semiconducting Nitrogen-Graphene Alloys

The interaction between substitutional nitrogen atoms in graphene is studied by performing first principles calculations. The nearest neighbor interaction between nitrogen dopants is highly repulsive because of the strong electrostatic repulsion between nitrogen atoms, which prevents the full phase separation in nitrogen doped graphene. Interestingly, there are two relatively stable nitrogen-nitrogen pairs due to the anisotropy charge redistribution induced by nitrogen doping. We reveal two stable semiconducting ordered N doped graphene structures C3N and C12N through the cluster expansion technique and particle swarm optimization method. In particular, C12N has a direct band gap of 0.98 eV. The heterojunctions between C12N and graphene nanoribbons might be promising organic solar cells.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

Diamond silicon (Si) is the leading material in current solar cell market. However, diamond Si is an indirect band gap semiconductor with a large energy difference (2.4 eV) between the direct gap and the indirect gap, which makes it an inefficient absorber of light. In this work, we develop a novel inverse-band structure design approach based on the particle swarming optimization algorithm to predict the metastable Si phases with better optical properties than diamond Si. Using our new method, we predict a cubic Si20 phase with quasi-direct gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells.

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preprint2011arXiv

Controlling doping in graphene through a SiC substrate: A first-principles study

Controlling the type and density of charge carriers by doping is the key step for developing graphene electronics. However, direct doping of graphene is rather a challenge. Based on first-principles calculations, a concept of overcoming doping difficulty in graphene via substrate is reported.We find that doping could be strongly enhanced in epitaxial graphene grown on silicon carbide substrate. Compared to free-standing graphene, the formation energies of the dopants can decrease by as much as 8 eV. The type and density of the charge carriers of epitaxial graphene layer can be effectively manipulated by suitable dopants and surface passivation. More importantly, contrasting to the direct doping of graphene, the charge carriers in epitaxial graphene layer are weakly scattered by dopants due to the spatial separation between dopants and the conducting channel. Finally, we show that a similar idea can also be used to control magnetic properties, for example, induce a half-metallic state in the epitaxial graphene without magnetic impurity doping.

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preprint2011arXiv

Strain Control of Magnetism in Transition-Metal-Atom Decorated Graphene

We report a strain-controlled tuning of magnetism in transition-metal-atom-decorated graphene. Our first-principles calculations demonstrate that strain can lead to a sudden change in the magnetic configuration of a transition metal (TM) adatom and the local atomic structure in the sur- rounding graphene layer, which have a dramatic effect on the effective exchange coupling between neighboring TM atoms. A strong spin-dependent hybridization between TM d and graphene 1/4 orbital states, derived from the orbital selection rule of the local lattice symmetry, is responsible for the determination of the local electronic and magnetic structure. Our results indicate that the strain can be an effective way to control the magnetism of atomic-scale nanostructures, where the reliable control of their magnetic states is a key step for the future spintronic applications.

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preprint2011arXiv

Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors

Using physical insights and advanced first-principles calculations, we suggest that corundum is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of » 180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which could realize large ON/OFF ratio and high carrier mobility in graphene transistors without additional band gap engineering and significant reduction of transport properties. Moreover, the band gaps of graphene/Al2O3 system could be tuned by an external electric field for practical applications.

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preprint2010arXiv

Ab initio study of beryllium-decorated fullerenes for hydrogen storage

We have found that a beryllium (Be) atom on nanostructured materials with H2 molecules generates a Kubas-like dihydrogen complex [H. Lee et al. arXiv:1002.2247v1 (2010)]. Here, we investigate the feasibility of Be-decorated fullerenes for hydrogen storage using ab initio calculations. We find that the aggregation of Be atoms on pristine fullerenes is energetically preferred, resulting in the dissociation of the dihydrogen. In contrast, for boron (B)-doped fullerenes, Be atoms prefer to be individually attached to B sites of the fullerenes, and a maximum of one H2 molecule binds to each Be atom in a form of dihydrogen with a binding energy of ~0.3 eV. Our results show that individual dispersed Be-decorated B-doped fullerenes can serve as a room-temperature hydrogen storage medium.

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preprint2010arXiv

Beryllium-dihydrogen complexes on nanostructures

Using the pseudopotential density functional method, we find that a Be atom on a nanostructure with H2 molecules forms a Be-dihydrogen complex through the hybridization of the Be s or p orbits with the H2 sigma orbits and the binding energy of the H2 molecules is in the range of ~0.3 - 0.8 eV/H2. We also study Be-dihydrogen complexes on various nanostructures and demonstrate the feasibility of the application of the complexes to a hydrogen storage medium that operates near room temperature and ambient pressure.

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preprint2010arXiv

Edge Stability of BN sheets and Its Application for Designing Hybrid BNC Structures

First-principles investigations on the edge energies and edge stresses of single-layer hexagonal boron-nitride (BN) are presented. The armchair edges of BN nanoribbons (BNNRs) are more stable in energy than zigzag ones. Armchair BNNRs are under compressive edge stress while zigzag BNNRs are under tensile edge stress. The intrinsic spin-polarization and edge saturation play important roles in modulating the edge stability of BNNRs. The edge energy difference between BN and graphene could be used to guide the design of the specific hybrid BNC structures: in an armchair BNC nanoribbon (BNCNR), BN domains are expected to grow outside of C domains, while the opposite occurs in a zigzag BNCNR. More importantly, armchair BNCNRs can reproduce unique electronic properties of armchair graphene nanoribbons (GNRs), which are expected to be robust against edge functionalization or disorder. Within certain C/BN ratio, zigzag BNCNRs may exhibit intrinsic half-metallicity without any external constraints. These unexpected electronic properties of BNCNRs may offer unique opportunities to develop nanoscale electronics and spintronics beyond individual graphene and BN. Generally, these principles for designing BNC could be extended to other hybrid nanostructures.

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preprint2010arXiv

Multiple Localized States and Magnetic Orderings in Partially Open Zigzag Carbon Nanotube Superlattices: An Ab Initio Study

Using first-principles calculations, we examine the electronic and magnetic properties of partially open zigzag carbon nanotube (CNT) superlattices. It is found that depending on their opening degree, these superlattices can exhibit multiple localized states around the Fermi energy. More importantly, some electronic states confined in some parts of the structure even have special magnetic orderings. We demonstrate that, as a proof of principle, some partially open zigzag CNT superlattices are by themselves giant (100%) magnetoresistive devices. Furthermore, the localized(and spin-polarized) states as well as the band gaps of the superlattices could be further modulated by external electric fields perpendicular to the tube axis, and a bias voltage along the tube axis may be used to control the conductance of two spin states. We believe that these results will open the way to the production of novel nanoscale electronic and spintronic devices.

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preprint2010arXiv

Quantum Manifestations of Graphene Edge Stress and Edge Instability: A First-Principles Study

We have performed first-principles calculations of graphene edge stresses, which display two interesting quantum manifestations absent from the classical interpretation: the armchair edge stress oscillates with a nanoribbon width, and the zigzag edge stress is noticeably reduced by spin polarization. Such quantum stress effects in turn manifest in mechanical edge twisting and warping instability, showing features not captured by empirical potentials or continuum theory. Edge adsorption of H and Stone-Wales reconstruction are shown to provide alternative mechanisms in relieving the edge compression and hence to stabilize the planar edge structure.

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preprint2010arXiv

Releasing H2 molecules with a partial pressure difference without the use of temperature

Using the pseudopotential density functional method as well as equilibrium thermodynamic functions, we explore the process of releasing H2 molecules adsorbed on a transition metal atom caused by the hydrogen-ammonia partial pressure difference. The H2 molecules bind to a transition metal atom at H2 pressure-NH3 pressure-temperature 50 atm-10-9 atm-25 °C, and they are released at 3 atm-10-6 atm-25 °C. This process involves the same mechanism responsible for carbon monoxide poisoning of hemoglobin with the O2-CO partial pressure difference. We show that our findings can be applicable to an approach to induce hydrogen desorption on nanostructured hydrogen storage materials without the need for increasing temperature.

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preprint2010arXiv

The Half-Metallicity of Zigzag Graphene Nanoribbons with Asymmetric Edge Terminations

The spin-polarized electronic structure and half-metallicity of zigzag graphene nanoribbons (ZGNRs) with asymmetric edge terminations are investigated by using first principles calculations. It is found that compared with symmetric hydrogen-terminated counterparts, such ZGNRs maintain a spin-polarized ground state with the anti-ferromagnetic configuration at opposite edges, but their energy bands are no longer spin degenerate. In particular, the energy gap of one spin orientation decreases remarkably. Consequently, the ground state of such ZGNRs is very close to half-metallic state, and thus a smaller critical electric field is required for the systems to achieve the half-metallic state. Moreover, two kinds of studied ZGNRs present massless Dirac-fermion band structure when they behave like half-metals.

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preprint2010arXiv

Towards Graphene Nanoribbon-based Electronics

The successful fabrication of single layer graphene has greatly stimulated the progress of the research on graphene. In this article, focusing on the basic electronic and transport properties of graphene nanoribbons (GNRs), we review the recent progress of experimental fabrication of GNRs, and the theoretical and experimental investigations of physical properties and device applications of GNRs. We also briefly discuss the research efforts on the spin polarization of GNRs in relation to the edge states.

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