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Jisoon Ihm

Jisoon Ihm contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2013arXiv

Decay behavior of localized states at reconstructed armchair graphene edges

Density functional theory calculations are used to investigate the electronic structures of localized states at reconstructed armchair graphene edges. We consider graphene nanoribbons with two different edge types and obtain the energy band structures and charge densities of the edge states. By examining the imaginary part of the wavevector in the forbidden energy region, we reveal the decay behavior of the wavefunctions in graphene. The complex band structures of graphene in the armchair and zigzag directions are presented in both tight-binding and first-principles frameworks.

preprint2011arXiv

Pseudospin rotation and valley mixing in electron scattering at graphene edges

In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone, respectively. Unique electronic properties of graphene result in striking phenomena such as Klein tunnelling, Veselago lens, and valley-polarized currents. Here, we investigate the roles of the pseudospin and the valley in electron scattering at graphene edges and show that they are strongly correlated with charge density modulations of short-wavelength oscillations and slowly-decaying beat patterns. Theoretical analyses using nearest-neighbor tight-binding methods and first-principles density-functional theory calculations agree well with our experimental data from the scanning tunneling microscopy. We believe that this study will lead to useful application of graphene to "valleytronics" and "pseudospintronics".

preprint2010arXiv

Calcium-Decorated Graphene-Based Nanostructures for Hydrogen Storage

We report a first-principles study of hydrogen storage media consisting of calcium atoms and graphene-based nanostructures. We find that Ca atoms prefer to be individually adsorbed on the zigzag edge of graphene with a Ca-Ca distance of 10 A without clustering of the Ca atoms, and up to six H2 molecules can bind to a Ca atom with a binding energy of ~0.2 eV/H2. A Ca-decorated zigzag graphene nanoribbon (ZGNR) can reach the gravimetric capacity of ~5 wt % hydrogen. We also consider various edge geometries of the graphene for Ca dispersion.

preprint2010arXiv

Controlling Half-Metallicity of Graphene Nanoribbons by Using a Ferroelectric Polymer

On the basis of first-principles computational approaches, we present a new method to drive zigzag graphene nanoribons (ZGNRs) into the half-metallic state using a ferroelectric material, poly(vinylidene fluoride) (PVDF). Owing to strong dipole moments of PVDFs, the ground state of the ZGNR becomes half-metallic when a critical coverage of PVDFs is achieved on the ZGNR. Since ferroelectric polymers are physisorbed, the direction of the dipole field in PVDFs can be rotated by relatively small external electric fields, and the switching between half-metallic and insulating states may be achieved. Our results suggest that, without excessively large external gate electric fields, half-metallic states of ZGNRs are realizable through the deposition of ferroelectric polymers and their electronic and magnetic properties are controllable via noninvasive mutual interactions.

preprint2010arXiv

Spontaneous edge-defect formation and defect-induced conductance suppression in graphene nanoribbons

We present a first-principles study of the migration and recombination of edge defects (carbon adatom and/or vacancy) and their influence on electrical conductance in zigzag graphene nanoribbons (ZGNRs). It is found that at room temperature, the adatom is quite mobile while the vacancy is almost immobile along the edge of ZGNRs. The recombination of an adatom-vacancy pair leads to a pentagon-heptagon ring defect structure having a lower energy than the perfect edge, implying that such an edge-defect can be formed spontaneously. This edge defect can suppresses the conductance of ZGNRs drastically, which provides some useful hints for understanding the observed semiconducting behavior of the fabricated narrow GNRs.