BZPEERReading, trust and collaboration for research
Menu

Discover

GraphFollow connections around a paper, topic or saved view.

Workspaces

HomePick up where your research flow left off.InboxHandle requests, replies and notifications from one place.CollectionsCurate reading lists, evidence sets and shareable dossiers.ResearchSee your private provenance graph, trail and imports.CollaborationMove from discovery into focused discussion rooms.PublishDraft, preview and publish full-text research articles.

Network

ExpertsFind specialists worth following or asking for help.CommunitiesJoin research circles organized around shared work.PartnersSee external organizations active around the same topics.

Opportunities

ListingsBrowse roles, calls and collaborations with clearer fit signals.

Account

Log inReturn to your reading and collaboration workspace.Create accountStart saving work, following people and joining teams.
Log inCreate account

Researcher profile

Bhupesh Bishnoi

Bhupesh Bishnoi contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallquant-phcond-mat.mtrl-scicond-mat.stat-mechEmerging TechnologiesMachine Learningmath.STStatistics Theory

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
8topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2022arXiv

Electronic Transport in Electron-Phonon Gas of Two-Dimensional Holstein's Organic Molecular-Crystal: Non-equilibrium Green's Function Formalism & Boltzmann Transport Framework (A Generalized Mathematical Solution)

We have presented a consistent electronic transport framework for the two-dimensional extended Holstein's organic molecular-crystal based upon complete quantum-mechanical treatment through the non-equilibrium Green's function (NEGF) formalism and corresponding one-to-one semi-classical framework based upon Boltzmann transport theory for the narrow-bandwidth electronic energy organic semiconductor crystal material and device. In this process, we have formulated electronic self-energy interaction with acoustic and polar optical phonon mode with one phonon and two phonon interactions through Feynman's diagrammatic techniques to investigate combined electronic transport. Furthermore, the aforementioned can readily expand for the three and four phonon interactions on choice based upon the particular class of organic semiconductor crystal and organic polymers for the modern organic device industry.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Lagrangian Density Space-Time Deep Neural Network Topology

As a network-based functional approximator, we have proposed a "Lagrangian Density Space-Time Deep Neural Networks" (LDDNN) topology. It is qualified for unsupervised training and learning to predict the dynamics of underlying physical science governed phenomena. The prototypical network respects the fundamental conservation laws of nature through the succinctly described Lagrangian and Hamiltonian density of the system by a given data-set of generalized nonlinear partial differential equations. The objective is to parameterize the Lagrangian density over a neural network and directly learn from it through data instead of hand-crafting an exact time-dependent "Action solution" of Lagrangian density for the physical system. With this novel approach, can understand and open up the information inference aspect of the "Black-box deep machine learning representation" for the physical dynamics of nature by constructing custom-tailored network interconnect topologies, activation, and loss/cost functions based on the underlying physical differential operators. This article will discuss statistical physics interpretation of neural networks in the Lagrangian and Hamiltonian domains.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quantum Computation

In this research notebook in the four-part, quantum computation and applications, quantum computation and algorithms, quantum communication protocol, and universal quantum computation for quantum engineers, researchers, and scientists, we will discuss and summarized the core principles and practical application areas of quantum computation. We first discuss the historical prospect from which quantum computing emerged from the early days of computing before the dominance of modern microprocessors. And the re-emergence of that quest with the sunset of Moore's law in the current decade. The mapping of computation onto the behavior of physical systems is a historical challenge vividly illustrate by considering how quantum bits may be realized with a wide variety of physical systems, spanning from atoms to photons, using semiconductors and superconductors. The computing algorithms also change with the underline variety of physical systems and the possibility of encoding the information in the quantum systems compared to the ordinary classical computers because of these new abilities afforded by quantum systems. We will also consider the emerging engineering, science, technology, business, and social implications of these advancements. We will describe a substantial difference between quantum and classical computation paradigm. After we will discuss and understand engineering challenges currently faced by developers of the real quantum computation system. We will evaluate the essential technology required for quantum computers to be able to function correctly. Later on, discuss the potential business application, which can be touch by these new computation capabilities. We utilize the IBM Quantum Experience to run the real-world problem, although on a small scale.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium

We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarization of electron's spin occurs in nanowire mainly due to D'yakonov-Perel dephasing (DP-mechanism) and Elliott-Yafet dephasing (EY-mechanism). We studied the dependence of spin dephasing on ultra-thin silicon core diameter in Si-Core/Ge-Shell nanowire and germanium core diameter in Ge-Core/Si-Shell nanowire. Variation in spin dephasing length with varying core diameter ranging from 1 nm to 9 nm indicate that spin dephasing length increases with increase in Si-core diameter in Si-Core/Ge-Shell nanowire and spin dephasing length decreases with increase in Ge-core diameter in Ge-Core/Si-Shell nanowire. We then studied the variation in spin dephasing length with varying externally applied transverse electric field ranging from 20 kV/cm to100 kV/cm. In the electric field dependence study we found that spin dephasing length is weakly dependent upon applied electric field. In the end, we studied the variation in spin dephasing length with varying temperature in the range of 4 K to 377 K. In this simulational study we found that for both Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system spin dephasing length shows a strong dependence on temperature and spin dephasing length increases with decrease in temperature from room temperature range.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs

In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have used a 3D full band, quantum mechanical simulator based on atomistic sp3d5s spin-orbital coupled tight binding method.In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. A broken narrow bandgap BG structure has another advantage that transport is by mixture of electrons holes. TFETs are promising devices for lowpower logic design due to low subthreshold swing SS and high Ion Ioff ratio. We investigate current voltage characteristics, ON current OFF current andsubthreshold swing as function of equivalent oxide thickness, gate length, drain length, gate undercut, High K, and drain thicknessfor L shaped nonlinear geometry tunnel FET for low subthreshold swing and lowvoltage operation. To study 2D electronic transport in this L shaped nonlinear geometry we used Non Equilibrium Green Function NEGF based quantum transport method using sp3d5s tight binding model in which Poisson-Schr odinger solver self consistently iterates to obtain potentials and Local Density of States LDOS. The advantage of this method is that it can handle arbitrary geometries and complicated 2D structures like Band to Band tunnelling BTBT devices. NEGF quantum transport method gives output in terms of Poisson potential and space charge in 3D, energy resolved transmission and spectral function and Local Density of States of electrons holes in space and energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs

In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20 nm. In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. We have used a 3 D full band atomistic sp3d5s spin orbital coupled tight binding method based quantum mechanical simulator. We have investigated current voltage characteristics, ON current, OFF current and subthreshold swing as functions of equivalent oxide thickness Tox, gate length LG, drain length LD, gate undercut LUC, dielectric constant and drain thickness TInAs in nonlinear L shaped TFETs for low subthreshold swing and low voltage operation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Performance Analysis of Spin Transfer Torque Random Access Memory with cross shaped free layer using Heusler Alloys by using micromagnetic studies

We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler compounds. Here in this paper, simulation results predict that switching time from one state to other state is reduced. Also it is examined that critical switching current density to switch the magnetization of free layer of STT RAM cell is reduced.

0 citations0 reviewsNo code linkedOpen access