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Researcher profile

Bahniman Ghosh

Bahniman Ghosh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciEmerging Technologieshep-thquant-ph

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Published work

20 published item(s)

preprint2016arXiv

Spin Polarized Transport in Core Shell Nanowire of Silicon and Germanium

We investigate spin polarized electron transport in ultra-thin Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system using semi-classical Monte Carlo simulation method. Depolarization of electron's spin occurs in nanowire mainly due to D'yakonov-Perel dephasing (DP-mechanism) and Elliott-Yafet dephasing (EY-mechanism). We studied the dependence of spin dephasing on ultra-thin silicon core diameter in Si-Core/Ge-Shell nanowire and germanium core diameter in Ge-Core/Si-Shell nanowire. Variation in spin dephasing length with varying core diameter ranging from 1 nm to 9 nm indicate that spin dephasing length increases with increase in Si-core diameter in Si-Core/Ge-Shell nanowire and spin dephasing length decreases with increase in Ge-core diameter in Ge-Core/Si-Shell nanowire. We then studied the variation in spin dephasing length with varying externally applied transverse electric field ranging from 20 kV/cm to100 kV/cm. In the electric field dependence study we found that spin dephasing length is weakly dependent upon applied electric field. In the end, we studied the variation in spin dephasing length with varying temperature in the range of 4 K to 377 K. In this simulational study we found that for both Si-Core/Ge-Shell and Ge-Core/Si-Shell nanowire system spin dephasing length shows a strong dependence on temperature and spin dephasing length increases with decrease in temperature from room temperature range.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the Bi2Se3. Part of the current is shunted through the ferromagnet which generates spin transfer torque in the ferromagnet. The combination of the spin transfer torque and exchange interaction torque along with voltage-controlled magnetic anisotropy (VCMA) allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.45fJ for a ferromagnetic bit with thermal stability of 43kBT. Such ultralow-energy and high-speed VCMA-induced switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are considered, with follower, inverter and majority gate functionality shown. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

2D full-band, Atomistic Quantum transport in L-shaped Vertical InSb/InAsn-TFETs

In the present work, we have investigated the performances of L shaped Vertical broken bandgapheterostructureInSb InAsn-channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20nm. We have used a 3D full band, quantum mechanical simulator based on atomistic sp3d5s spin-orbital coupled tight binding method.In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. A broken narrow bandgap BG structure has another advantage that transport is by mixture of electrons holes. TFETs are promising devices for lowpower logic design due to low subthreshold swing SS and high Ion Ioff ratio. We investigate current voltage characteristics, ON current OFF current andsubthreshold swing as function of equivalent oxide thickness, gate length, drain length, gate undercut, High K, and drain thicknessfor L shaped nonlinear geometry tunnel FET for low subthreshold swing and lowvoltage operation. To study 2D electronic transport in this L shaped nonlinear geometry we used Non Equilibrium Green Function NEGF based quantum transport method using sp3d5s tight binding model in which Poisson-Schr odinger solver self consistently iterates to obtain potentials and Local Density of States LDOS. The advantage of this method is that it can handle arbitrary geometries and complicated 2D structures like Band to Band tunnelling BTBT devices. NEGF quantum transport method gives output in terms of Poisson potential and space charge in 3D, energy resolved transmission and spectral function and Local Density of States of electrons holes in space and energy.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Effect of Diffused Hydrogen on the Conductance of Fe/Mgo/Fe Magnetic Tunnel Junctions: Atomistic Simulation

In this work we have analysed the deterimental effect on conductance caused by diffusion of hydrogen atoms in interstitial voids during fabrication process of magnesium oxide barrier of an Fe MgO Fe magnetic tunnel junction, using first principle calculations. This diffusion of hydrogen atoms in interstitial voids in barrier disturbs a certain kind of symmetry possessed by magnesium oxide often termed as delta 1 state symmetry. Distortion in delta 1 state symmetry tempers the condutance through the magnetic tunnel junction specially in parallel configuration, which in turn reduces the Tunnelling Magneto Resistance TMR to large extent. Improved methods of fabrication can be used to counter such kind of problems which affect device operation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs

In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20 nm. In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. We have used a 3 D full band atomistic sp3d5s spin orbital coupled tight binding method based quantum mechanical simulator. We have investigated current voltage characteristics, ON current, OFF current and subthreshold swing as functions of equivalent oxide thickness Tox, gate length LG, drain length LD, gate undercut LUC, dielectric constant and drain thickness TInAs in nonlinear L shaped TFETs for low subthreshold swing and low voltage operation.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Performance Analysis of Spin Transfer Torque Random Access Memory with cross shaped free layer using Heusler Alloys by using micromagnetic studies

We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler compounds. Here in this paper, simulation results predict that switching time from one state to other state is reduced. Also it is examined that critical switching current density to switch the magnetization of free layer of STT RAM cell is reduced.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Device Improvement and Circuit Performance Evaluation of complete SiGe Double Gate Tunnel FETs

In recent part extensive simulation work has already been done on TFETs. However this is limited to device performance analysis. Evaluation of circuit performance is a topic that is very little touched. This is due to the non availability of compact models of Tunnel FETs in the commercial simulator. In our paper for the first time we perform the circuit analysis of tunnel FETs (extended channel TFETs), we test them over basic digital circuit. We generate the TFET models by using the model editor in Orcad. Extensive circuit simulation is then performed by using these models in the Pspice circuit design. Performance of extended channel double gate TFET is evaluated on the grounds of power and delay in inverter, nand gate, nor gate and ring oscillator. Before that we perform device analysis of double gate extended channel TFETs, extended channel has been tried before on SOI TFETs we try it for the first time on double gate Si1-xGex TFETs. We even look at the effect of introducing Si layer. The performance of this device is compared for different Ge mole fraction and also with MOSFETs

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Monte Carlo simulation of spin polarized transport in nanowires and 2-D channels of III-V semiconductors

We simulated spin polarized transport of electrons along III-V nanowires and two dimensional III-V channels using semi classical Monte Carlo method. Properties of spin relaxation length have been investigated in different III-V zinc-blende materials at various conditions, such as, temperature, external field etc. Spin dephasing in III-V channels is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. Spin dephasing length in nanowire is found to be greater than that in 2-D channel.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Monte Carlo simulation of spin relaxation in nanowires and 2-D channels of II-VI semiconductors

We have analysed spin relaxation behaviour of various II-VI semiconductors for nanowire structure and 2-D channel by simulating spin polarized transport through a semi-classical approach. Monte Carlo simulation method has been applied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafet mechanism are dominant for spin relaxation in II-VI semiconductors. Variation in spin relaxation length with external field has been analysed and comparison is drawn between nanowire and 2-D channels. Spin relaxation lengths of various II-VI semiconductors are compared at an external field of 1kV/cm to understand the predominant factors affecting spin de-phasing in them. Among the many results obtained, most noticeable one is that spin relaxation length in nanowires is many times greater than that in 2-D channel.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Non Equilibrium Green's Function Analysis of Double Gate SiGe and GaAs Tunnel FETs

In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green's formalism has proved effective in modeling nano scale devices. We model complete SiGe and GaAs tunnel FET for the first time using the NEGF formalism, also taking acoustic phonon scattering into account. We analyze them on the grounds of I-V curve, Ion-Ioff ration and subthreshold slope. The poisson equation and the equilibrium statistical mechanical equation has been solved by providing the potential profile.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Single Spin Logic Implementation of VLSI Adders

Some important VLSI adder circuits are implemented using quantum dots (qd) and Spin Polarized Scanning Tunneling Microscopy (SPSTM) in Single Spin Logic (SSL) paradigm. A simple comparison between these adder circuits shows that the mirror adder implementation in SSL does not carry any advantage over CMOS adder in terms of complexity and number of qds, opposite to the trend observed in their charge-based counterparts. On the contrary, the transmission gate adder, Static and Dynamic Manchester carry gate adders in SSL reduce the complexity and number of qds, in harmony with the trend shown in transistor adders.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin dephasing in III-V nanowires

We use semiclassical Monte Carlo approach to investigate spin polarized transport in InP and InSb nanowires. Spin dephasing in III-V channels is caused due to D'yakonov- Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The DP relaxation occurs because of bulk inversion asymmetry (Dresselhaus spin-orbit interaction) and structural inversion asymmetry (Rashba spin-orbit interaction). The injection polarization direction studied is that along the length of the channel. The dephasing rate is found to be very strong for InSb as compared to InP which has larger spin dephasing lengths. The ensemble averaged spin components vary differently for both InP and InSb nanowires. The steady state spin distribution also shows a difference between the two III-V nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin dephasing in Silicon Germanium nanowires

We study spin polarized transport in silicon germanium nanowires using a semiclassical monte carlo approach. Spin depolarization in the channel is caused due to D'yakonov-Perel (DP) relaxation associated with Rashba spin orbit coupling and due to Elliott- Yafet (EY) relaxation. We investigate the dependence of spin dephasing on germanium mole fraction in silicon germanium nanowires. The spin dephasing lengths decrease with an increase in the germanium mole fraction. We also find that the temperature has a strong influence on the dephasing rate and spin relaxation lengths increase with decrease in temperature. The ensemble averaged spin components and the steady state distribution of spin components vary with initial polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin Relaxation in Germanium Nanowires

We use semiclassical Monte Carlo approach along with spin density matrix calculations to model spin polarized electron transport. The model is applied to germanium nanowires and germanium two dimensional channels to study and compare spin relaxation between them. Spin dephasing in germanium occurs because of Rashba Spin Orbit Interaction (structural inversion asymmetry) which gives rise to D'yakonov-Perel(DP) relaxation. In germanium spin flip scattering due to Elliot-Yafet(EY) mechanism also leads to spin relaxation. The spin relaxation tests for both 1-D and 2-D channels are carried out at different values of temperature and driving electric field and the variation in spin relaxation length is recorded. Spin relaxation length in a nanowire is found to be much higher than that in a 2-D channel due to suppression of DP relaxation in a nanowire. At lower temperatures the spin relaxation length increases. This suggests that spin relaxation in germanium occurs slowly in a 1-D channel (nanowires) and at lower temperatures. The electric field dependence of spin relaxation length was found to be very weak.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin Relaxation in Silicon Nanowires

We simulate spin polarized transport of electrons along a silicon nanowire and along a silicon two dimensional channel. Spin density matrix calculations are used along with the semi-classical Monte Carlo approach to model spin evolution along the channel. Spin dephasing in silicon is caused due to Rashba Spin Orbit Interaction (structural inversion asymmetry) which gives rise to D'yakonov-Perel' relaxation. Spin relaxation length in a nanowire is found to be an order of magnitude higher than that in a 2-D channel. The effect of driving electric field on spin relaxation is also investigated. These results obtained are essential for design of spintronics based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin relaxation due to electron-electron magnetic interaction in high Lande g-factor semiconductors

We investigate spin transport in InSb/InAlSb heterostructure using the Monte Carlo approach, generalized by including density matrix description of spin for taking spin dynamics into account. In addition to the dominant Dyakonov-Perel (DP) mechanism for spin control and relaxation, we consider magnetic interaction between electrons which assumes importance due to high electronic Lande g-factor in the material. It is found that while the effect of magnetic interaction is not important at low densities, it reduces the spin relaxation length by as much as 50% at higher densities. We also present a calculation which elucidates the suppression of decoherence attributed to wave vector dependent magnetic field in the DP relaxation mechanism. We note that magnetic interaction is a general relaxation mechanism which may assume importance in materials with high electronic Lande g-factor.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

The role of electron-electron scattering in spin transport

We investigate spin transport in quasi 2DEG formed by III-V semiconductor heterojunctions using the Monte Carlo method. The results obtained with and without electron-electron scattering are compared and appreciable difference between the two is found. The electron-electron scattering leads to suppression of Dyakonov-Perel mechanism (DP) and enhancement of Elliott-Yafet mechanism (EY). Finally, spin transport in InSb and GaAs heterostructures is investigated considering both DP and EY mechanisms. While DP mechanism dominates spin decoherence in GaAs, EY mechanism is found to dominate in high mobility InSb. Our simulations predict a lower spin relaxation/decoherence rate in wide gap semiconductors which is desirable for spin transport.

0 citations0 reviewsNo code linkedOpen access