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Source author record

Barun Ghosh

Explore this author’s publications, collaborators and research topics. This catalog record has not been claimed by its author.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.optics

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12 publications

preprint2022arXiv

Collective plasmonic modes in the chiral multifold fermionic material CoSi

Plasmonics in topological semimetals offers exciting opportunities for fundamental physics exploration as well as for technological applications. Here, we investigate plasmons in the exemplar chiral crystal CoSi, which hosts a variety of multifold fermionic excitations. We show that CoSi hosts two distinct plasmon modes in the infrared regime at 0.1 eV and 1.1 eV in the long-wavelength limit. The 0.1 eV plasmon is found to be highly dispersive, and originates from intraband collective oscillations associated with a double spin-1 excitation, while the 1.1 eV plasmon is dispersionless and it involves interband correlations. Both plasmon modes lie outside the particle-hole continuum and possess long lifetime. Our study indicates that the CoSi class of materials will provide an interesting materials platform for exploring fundamental and technological aspects of topological plasmonics.

Open access
preprint2022arXiv

Magnetically tunable Dirac and Weyl fermions in the Zintl materials family

Recent classification efforts encompassing crystalline symmetries have revealed rich possibilities for solid-state systems to support a tapestry of exotic topological states. However, finding materials that realize such states remains a daunting challenge. Here we show how the interplay of topology, symmetry, and magnetism combined with doping and external electric and magnetic field controls can be used to drive the previously unreported SrIn2_2As2_2 materials family into a variety of topological phases. Our first-principles calculations and symmetry analysis reveal that SrIn2_2As2_2 is a dual topological insulator with Z2=(1;000)Z_2=(1;000) and mirror Chern number CM=−1C_M= -1. Its isostructural and isovalent antiferromagnetic cousin EuIn2_2As2_2 is found to be an axion insulator with Z4=2Z_4= 2. The broken time-reversal symmetry via Eu doping in Sr1−x_{1-x}Eux_xIn2_2As2_2 results in a higher-order or topological crystalline insulator state depending on the orientation of the magnetic easy axis. We also find that antiferromagnetic EuIn2_2P2_2 is a trivial insulator with Z4=0Z_4= 0, and that it undergoes a magnetic field-driven transition to an ideal Weyl fermion or nodal fermion state with Z4=1Z_4= 1 with applied magnetic field. Our study identifies Sr1−x_{1-x}Eux_xIn2_2(As, P)2_2 as a new tunable materials platform for investigating the physics and applications of Weyl and nodal fermions in the scaffolding of crystalline and axion insulator states.

Open access
preprint2022arXiv

Switchable large-gap quantum spin Hall state in two-dimensional MSi2_2Z4_4 materials class

Quantum spin Hall (QSH) insulators exhibit spin-polarized conducting edge states that are topologically protected from backscattering and offer unique opportunities for addressing fundamental science questions and device applications. Finding viable materials that host such topological states, however, remains a challenge. Here by using in-depth first-principles theoretical modeling, we predict large bandgap QSH insulators in recently bottom-up synthesized two-dimensional (2D) MSi2_2Z4_4 (M = Mo or W and Z = P or As) materials family with 1T′1T^\prime structure. A structural distortion in the 2H2H phase drives a band inversion between the metal (Mo/W) dd and pp states of P/As to realize spinless Dirac cone states without spin-orbit coupling. When spin-orbit coupling is included, a hybridization gap as large as ∼204\sim 204 meV opens up at the band crossing points, realizing spin-polarized conducting edge states with nearly quantized spin Hall conductivity. We also show that the inverted band gap is tunable with a vertical electric field which drives a topological phase transition from the QSH to a trivial insulator with Rashba-like edge states. Our study identifies 2D MSi2_2Z4_4 materials family with 1T′1T^\prime structure as large bandgap, tunable QSH insulators with protected spin-polarized edge states and large spin-Hall conductivity.

Open access
preprint2022arXiv

Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands

In search of materials with three-dimensional flat band dispersions, using {\em ab-initio} computations, we investigate how topological phases evolve as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In short-period HgTe/CdTe superlattices, our analysis unveils the presence of isoenergetic nodal lines, which could host strain-induced three-dimensional flat bands at the Fermi level without requiring doping, when fabricated, for instance, as core-shell nanowires. In contrast, HgTe/HgSe short-period superlattices are found to harbor a rich phase diagram with a plethora of topological phases. Notably, the unstrained superlattice realizes an ideal Weyl semimetal with Weyl points situated at the Fermi level. A small-gap topological insulator with multiple band inversions can be obtained by tuning the volume: under compressive uniaxial strain, the material transitions sequentially into a Dirac semimetal to a nodal-line semimetal, and finally into a topological insulator with a single band inversion.

Open access
preprint2022arXiv

Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors

We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.

Open access
preprint2021arXiv

Observation of Dynamic Screening in the Excited Exciton States in Multi-layered MoS2_2

Excitonic resonance and binding energies can be altered by controlling the environmental screening of the attractive Coulomb potential. Although this screening response is often assumed to be static, the time evolution of the excitonic quasiparticles manifests a frequency-dependence in its Coulomb screening efficacy. In this letter, we investigate a ground (1s) and first excited exciton state (2s) in a multi-layered transition metal dichalcogenide (MoS2_2) upon ultrafast photo-excitation. We explore the dynamic screening effects on the latter and show its resonance frequency is the relevant frequency at which screening from the smaller-sized 1s counterparts is effective. Our finding sheds light on new avenues of external tuning on excitonic properties.

Open access
preprint2020arXiv

K2_2CoS2_2: A new two-dimensional in-plane antiferromagnetic insulator

The recent discovery of two-dimensional (2D) magnetic materials has brought magnetism to the flatland. This has opened up exciting opportunities for the exploration of fundamental physics as well as for novel device applications. Here, we predict a new thermodynamically stable 2D magnetic material, K2_2CoS2_2, which retains its in-plane anti-ferromagnetic order down to the monolayer and bilayer limits. We find that the magnetic moments (2.5μB/2.5 μ_B/Co) are aligned along the intra-Co chains, from monolayer to bulk. The non-magnetic electronic spectrum of both the monolayer and bilayer films is found to host flat bands and van-Hove singularities, which in instrumental in giving rise to the the magnetic ground state. Based on classical Monte-Carlo simulations, we estimate the Neel temperature for the antiferromagnetic monolayer to be ≈15\approx 15K. Our study thus establishes that K2_2CoS2_2 hosts a robust antiferromagnetic state which persists from the monolayer limit to the bulk material.

Open access
preprint2020arXiv

Saddle-point von Hove singularity and dual topological insulator state in Pt2_2HgSe3_3

Saddle-point van Hove singularities in the topological surface states are interesting because they can provide a new pathway for accessing exotic correlated phenomena in topological materials. Here, based on first-principles calculations combined with a k⋅p\mathbf {k \cdot p} model Hamiltonian analysis, we show that the layered platinum mineral jacutingaite (Pt2_2HgSe3_3) harbours saddle-like topological surface states with associated van Hove singularities. Pt2_2HgSe3_3 is shown to host two distinct types of nodal lines without spin-orbit coupling (SOC) which are protected by combined inversion (II) and time-reversal (TT) symmetries. Switching on the SOC gaps out the nodal lines and drives the system into a topological insulator state with nonzero weak topological invariant Z2=(0;001)Z_2=(0;001) and mirror Chern number nM=2n_M=2. Surface states on the naturally cleaved (001) surface are found to be nontrivial with a unique saddle-like energy dispersion with type II van Hove singularities. We also discuss how modulating the crystal structure can drive Pt2_2HgSe3_3 into a Dirac semimetal state with a pair of Dirac points. Our results indicate that Pt2_2HgSe3_3 is an ideal candidate material for exploring the properties of topological insulators with saddle-like surface states.

Open access
preprint2016arXiv

Electric-field tunable Dirac semimetal state in phosphorene thin films

We study the electric-field tunable electronic properties of phosphorene thin films, using the framework of density functional theory. We show that phosphorene thin films offer a versatile material platform to study two dimensional Dirac fermions on application of a transverse electric field. Increasing the strength of the transverse electric field beyond a certain critical value in phosphorene leads to the formation of two symmetry protected gapless Dirac fermions states with anisotropic energy dispersion. The spin-orbit coupling splits each of these Dirac state into two spin- polarized Dirac cones which are also protected by non-symmorphic crystal symmetries. Our study shows that the position as well as the carrier velocity of the spin polarized Dirac cone states can be controlled by the strength of the external electric field.

Open access
preprint2016arXiv

Electrical and optical conductivities of hole gas in pp-doped bulk III-V semiconductors

We study electrical and optical conductivities of hole gas in pp-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various impurity potentials, Drude weight and optical conductivity in terms of the Luttinger parameters γ1γ_1 and γ2γ_2. The back scattering is completely suppressed as a result of the helicity conservation of the heavy and light hole states. We find that the inverse relaxation time of heavy holes is much less than that of the light holes for Coulomb-type and Gaussian-type impurity potentials and vice-versa for short-range impurity potentials. The Drude conductivity increases non-linearly with the increase of the hole density. The exponent of the density dependence of the conductivity is obtained in Thomas-Fermi limit. The Drude weight varies linearly with the density even in presence of the spin-orbit coupling. The finite-frequency optical conductivity goes as ω\sqrtω and its amplitude strongly depends on the Luttinger parameters. The Luttinger parameters can be extracted from the optical conductivity measurement.

Open access
preprint2016arXiv

New ground states of fluorinated and oxidized phosphorene: structural and electronic properties

We systematically explore chemical functionalization of monolayer black phosphorene via chemisorption of oxygen and fluorine atoms. Using the cluster expansion technique, with vary- ing concentration of the adsorbate, we determine the ground states considering both single- as well as double- side chemisorption, which have novel chemical and electronic properties. The nature of the bandgap depends on the concentration of the adsorbate: for fluorination the direct bandgap first decreases, and then increases while becoming indirect, with increasing fluorination, while for oxidation the bandgap first increases and then decreases, while mostly maintaining its direct nature. Further we find that the unique anisotropic free-carrier effective mass for both the electrons and holes, can be changed and even rotated by 90 degrees, with controlled chemisorption, which can be useful for exploring unusual quantum Hall effect, and novel electronic devices based on phosphorene.

Open access
preprint2015arXiv

Electric field induced gap modification in ultrathin blue phosphorous

We investigate the possibility of band structure engineering in the recently predicted 2D layered form of blue phosphorus via an electric field (Ez_z) applied perpendicular to the layer(s). Using density functional theory, we study the effect of a transverse electric field in monolayer, as well as three differently stacked bilayer structures of blue phosphorus. We find that, for Ez>0.2_z > 0.2 V/Å the direct energy gap at the ΓΓ point, which is much larger than the default indirect band gap of mono- and bilayer blue phosphorus, decreases linearly with the increasing electric field; becomes comparable to the default indirect band gap at Ez≈0.45(0.35)_z \approx 0.45 (0.35) V/Å for monolayer (bilayers) and decreases further until the semiconductor to metal transition of 2D blue phosphorus takes place at Ez≈0.7(0.5)_z\approx 0.7 (0.5) V/Å for monolayer (bilayers). Calculated values of the electron and hole effective masses along various high symmetry directions in the reciprocal lattice suggests that the mobility of charge carriers is also influenced by the applied electric field.

Open access

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