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B. I. Shklovskii

B. I. Shklovskii appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-mat.softcond-mat.str-elBiomoleculesphysics.chem-phBiological PhysicsCell Behaviorcond-matcond-mat.stat-mechcond-mat.supr-con

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Published work

46 published item(s)

preprint2022arXiv

Biexciton crystal in a two-dimensional semiconductor heteropentalayer

This paper is written for the Special Issue in Honor of Emmanuel Rashba. We study the gas of indirect dipolar excitons created by an interband illumination of a pentalayer WSe$_2$/MoSe$_2$/WSe$_2$/MoSe$_2$/WSe$_2$. We show that two colinear indirect excitons bind into a linear biexciton with twice larger dipole moment. Two biexcitons with opposite dipole directions attract each other at large distances and repel each other at short distances. Therefore, biexcitons form a staggered crystal with anti-ferroelectric square lattice. The electrostatic energy of this crystal per biexciton has a minimum at the biexciton concentration $n =n_c=0.14d^{-2}$, where $d \sim 0.7$ nm is a single layer thickness. At small illumination intensity, biexcitons condense into sparse crystallites with $n = n_c$, where photoluminescence frequency is red shifted and independent on the light intensity. We also study a capacitor made of five identical semiconductor monolayers separated by hBN spacers where a critical voltage applied between layers 1, 3, 5, and 2, 4 abruptly creates a similar biexciton crystal. At this voltage, the differential capacitance diverges.

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preprint2022arXiv

Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder

In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $Δ$. But transport experiments usually exhibit a much smaller activation energy at low temperature, and the relation between this activation energy and $Δ$ is unclear. Here we consider the temperature-dependent conductivity of a two-dimensional insulator on a substrate containing Coulomb impurities, with random potential amplitude $Γ\gg Δ$. We show that the conductivity generically exhibits three regimes of conductivity, and only the highest temperature regime exhibits an activation energy that reflects the band gap. At lower temperatures, the conduction proceeds through activated hopping or Efros-Shklovskii variable-range hopping between electron and hole puddles created by the disorder. We show that the activation energy and characteristic temperature associated with these processes steeply collapse near a critical impurity concentration. Larger concentrations lead to an exponentially small activation energy and exponentially long localization length, which in mesoscopic samples can appear as a disorder-induced insulator-to-metal transition. We also arrive at a similar steep disorder driven insulator-metal transition in thin films of three-dimensional topological insulators with large dielectric constant, for which Coulomb impurities inside the film create a large disorder potential due to confinement of their electric field inside the film.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Plasmons in semiconductor and topological insulator wires with large dielectric constant

The dispersion law of plasmons running along thin wires with radius $a$ is known to be practically linear. We show that in a wire with a dielectric constant $κ$ much larger than that of its environment $κ_e$, such dispersion law crosses over to a dispersionless three-dimensional-like law when the plasmon wavelength becomes shorter than the length $(a/2) \sqrt{(κ/κ_e)\ln(κ/2κ_e)}$ at which the electric field lines of a point charge exit from the wire to the environment. This happens both in trivial semiconductor wires and wires of three-dimensional topological insulators.

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preprint2022arXiv

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various scattering mechanisms and their dependencies on the electron density. We find that at lower electron densities, $n_e \lesssim 1 \times 10^{11}$ cm$^{-2}$, both transport and quantum mobility are limited by unintentional background impurities and follow a power law dependence, $\propto n_e^α$, with $α\approx 0.85$. Our predictions for quantum mobility are in reasonable agreement with an estimate obtained from the resistivity at filling factor $ν= 1/2$ in a sample of Y. J. Chung \textit{et al.} with $n_e = 1 \times 10^{11}$ cm$^{-2}$. Consideration of other scattering mechanisms indicates that interface roughness (remote donors) is a likely limiting factor of transport (quantum) mobility at higher electron densities. Future measurements of quantum mobility should yield information on the distribution of background impurities in GaAs and AlGaAs.

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preprint2020arXiv

Anderson transition in three-dimensional systems with non-Hermitian disorder

We study the Anderson transition for three-dimensional (3D) $N \times N \times N$ tightly bound cubic lattices where both real and imaginary parts of onsite energies are independent random variables distributed uniformly between $-W/2$ and $W/2$. Such a non-Hermitian analog of the Anderson model is used to describe random-laser medium with local loss and amplification. We employ eigenvalue statistics to search for the Anderson transition. For 25\% smallest-modulus complex eigenvalues we find the average ratio $r$ of distances to the first and the second nearest neighbor as a function of $W$. For a given $N$ the function $r(W)$ crosses from $0.72$ to 2/3 with a growing $W$ demonstrating a transition from delocalized to localized states. When plotted at different $N$ all $r(W)$ cross at $W_c = 6.0 \pm 0.1$ (in units of nearest neighbor overlap integral) clearly demonstrating the 3D Anderson transition. We find that in the non-Hermitian 2D Anderson model, the transition is replaced by a crossover.

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preprint2020arXiv

Isotropically conducting (hidden) quantum Hall stripe phases in a two-dimensional electron gas

Quantum Hall stripe (QHS) phases, predicted by the Hartree-Fock theory, are manifested in GaAs-based two-dimensional electron gases as giant resistance anisotropies. Here, we predict a ``hidden'' QHS phase which exhibits \emph{isotropic} resistivity whose value, determined by the density of states of QHS, is independent of the Landau index $N$ and is inversely proportional to the Drude conductivity at zero magnetic field. At high enough $N$, this phase yields to an Ando-Unemura-Coleridge-Zawadski-Sachrajda phase in which the resistivity is proportional to $1/N$ and to the ratio of quantum and transport lifetimes. Experimental observation of this border should allow one to find the quantum relaxation time.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectral rigidity of non-Hermitian symmetric random matrices near Anderson transition

We study the spectral rigidity of the non-Hermitian analog of the Anderson model suggested by Tzortzakakis, Makris and Economou (TME). This is a $L\times L \times L$ tightly bound cubic lattice, where both real and imaginary parts of on-site energies are independent random variables uniformly distributed between $-W/2$ and $W/2$. The TME model may be used to describe a random laser. In a recent paper we proved that this model has the Anderson transition at $W= W_c \simeq 6$ in three dimension. Here we numerically diagonalize TME $L \times L \times L$ cubic lattice matrices and calculate the number variance of eigenvalues in a disk of their complex plane. We show that on the metallic side $W < 6$ of the Anderson transition, complex eigenvalues repel each other as strongly as in the complex Ginibre ensemble only in a disk containing $N_c(L,W)$ eigenvalues. We find that $N_c(L,W)$ is proportional to $L$ and grows with decreasing $W$ similarly to the number of energy levels $N_c$ in the Thouless energy band of the Anderson model.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$

We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons $n(x)$ in such a layer decays with the distance from the surface $x$ very slowly as $n(x) \propto 1/x^{12/7}$. We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large $x$ because of growing time electrons need to reach the surface. We explore truncation of this divergence by the finite sample width, by the bulk scattering rate, or by the crossover to the bulk linear dielectric response with the dielectric constant $κ$. As a result we arrive at the anomalously large mobility, which depends not only on the rate of the surface scattering, but also on the physics of truncation. Similar anomalous behavior is found for the Hall factor, the magnetoresistance, and the thermopower.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Dielectric Constant and Charging Energy in Array of Touching Nanocrystals

We calculate the effective macroscopic dielectric constant $\varepsilon_a$ of a periodic array of spherical nanocrystals (NCs) with dielectric constant $\varepsilon$ immersed in the medium with dielectric constant $\varepsilon_m \ll \varepsilon$. For an array of NCs with the diameter $d$ and the distance $D$ between their centers, which are separated by the small distance $s=D-d \ll d$ or touch each other by small facets with radius $ρ\ll d$ what is equivalent to $s < 0$, $|s| \ll d$ we derive two analytical asymptotics of the function $\varepsilon_a(s)$ in the limit $\varepsilon/\varepsilon_m \gg 1$. Using the scaling hypothesis we interpolate between them near $s=0$ to obtain new approximated function $\varepsilon_a(s)$ for $\varepsilon/\varepsilon_m \gg 1$. It agrees with existing numerical calculations for $\varepsilon/\varepsilon_m =30$, while the standard mean-field Maxwell-Garnett and Bruggeman approximations fail to describe percolation-like behavior of $\varepsilon_a(s)$ near $s = 0$. We also show that in this case the charging energy $E_c$ of a single NC in an array of touching NCs has a non-trivial relationship to $\varepsilon_a $, namely $E_c = αe^2/\varepsilon_a d$, where $α$ varies from 1.59 to 1.95 depending on the studied three-dimensional lattices. Our approximation for $\varepsilon_a(s)$ can be used instead of mean field Maxwell-Garnett and Bruggeman approximations to describe percolation like transitions near $s=0$ for other material characteristics of NC arrays, such as conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Metal-insulator transition in films of doped semiconductor nanocrystals

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$ for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted $n_c$, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Surface roughness scattering in multisubband accumulation layers

Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the surface roughness scattering. However theories of roughness scattering so far dealt only with the small-density single subband two-dimensional electron gas (2DEG). Here we develop a theory of roughness-scattering limited mobility for the multisubband large concentration case. We show that with growing 2D electron concentration $n$ the surface dimensionless conductivity $σ/(2e^2/h)$ first decreases as $\propto n^{-6/5}$ and then saturates as $\sim(da_B/Δ^2)\gg 1$, where $d$ and $Δ$ are the characteristic length and height of the surface roughness, $a_B$ is the effective Bohr radius. This means that in spite of the shrinkage of the 2DEG width and the related increase of the scattering rate, the 2DEG remains a good metal. Thus, there is no re-entrant metal-insulator transition at high concentrations conjectured by Das Sarma and Hwang [PRB 89, 121413 (2014)].

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Accumulation, inversion, and depletion layers in SrTiO$_3$

We study potential and electron density depth profiles in accumulation, inversion and depletion layers in crystals with large and nonlinear dielectric response such as $\mathrm{SrTiO_3}$. We describe the lattice dielectric response using the Landau-Ginzburg free energy expansion. In accumulation and inversion layers we arrive at new nonlinear dependencies of the width $d$ of the electron gas on applied electric field $D_0$. Particularly important is the predicted electron density profile of accumulation layers (including the $\mathrm{LaAlO_3/SrTiO_3}$ interface) $n(x) \propto (x+d)^{-12/7}$, where $d \propto D_0^{-7/5}$ . We compare this profile with available data and find satifactory agreement. For a depletion layer we find an unconventional nonlinear dependence of capacitance on voltage. We also evaluate the role of spatial dispersion in the dielectric response by adding a gradient term to the Landau-Ginzburg free energy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Collapse of electrons to a donor cluster in SrTiO$_3$

It is known that a nucleus with charge $Ze$ where $Z>170$ creates electron-positron pairs from the vacuum. These electrons collapse onto the nucleus resulting in a net charge $Z_n<Z$ while the positrons are emitted. This effect is due to the relativistic dispersion law. The same reason leads to the collapse of electrons to the charged impurity with a large charge number $Z$ in narrow-band gap semiconductors and Weyl semimetals as well as graphene. In this paper, a similar effect of electron collapse and charge renormalization is found for donor clusters in SrTiO$_3$ (STO), but with a very different origin. At low temperatures, STO has an enormously large dielectric constant. Because of this, the nonlinear dielectric response becomes dominant when the electric field is not too small. We show that this leads to the collapse of surrounding electrons into a charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds a critical value $Z_c\simeq R/a$ where $a$ is the lattice constant. Using the Thomas-Fermi approach, we find that the net charge $Z_ne$ grows with $Z$ until $Z$ exceeds another value $Z^*\simeq(R/a)^{9/7}$. After this point, $Z_n$ remains $\sim Z^*$. We extend our results to the case of long cylindrical clusters. Our predictions can be tested by creating discs and stripes of charge on the STO surface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Correlation effects in the capacitance of a gated carbon nanotube

For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that when the average spacing $n^{-1}$ between electrons within the low density 1-dimensional electron gas (1DEG) in the CNT is larger than the physical separation $d$ between the CNT and the gate, the enhancement of capacitance is expected to be big. A recent Coulomb blockade experiment[1], however, has observed no obvious increase of capacitance even at very low electron density. We show that this smaller capacitance can be understood as the result of the confining potential produced by the potential difference between the source/drain electrodes and the gate, which compresses the 1DEG when the electron number decreases. We suggest that by profiling the potential with the help of multiple split gates, one can return to the case of a uniform 1DEG with anomalously large capacitance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron gas induced in SrTiO$_3$

This mini-review is dedicated to the 85th birthday of Prof. L. V. Keldysh, from whom we have learned so much. In this paper we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO$_3$ (STO) in the cases of planar, spherical and cylindrical geometries. The electron gas can be created by applying an induction $D_0$ to the STO surface. We describe the lattice dielectric response of STO using the Landau-Ginzburg free energy expansion and employ the Thomas-Fermi (TF) approximation for the electron gas. For the planar geometry we arrive at the electron density profile $n(x) \propto (x+d)^{-12/7}$, where $d \propto D_0^{-7/5} $. We extend our results to overlapping electron gases in GTO/STO/GTO multi-heterojunctions and electron gases created by spill-out from NSTO (heavily $n$-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with nuclear charge $Ze$, where $Z > 170$, electrons collapse onto the nucleus resulting in a net charge $Z_n < Z$. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds the critical value $Z_c \simeq R/a$, where $a$ is the lattice constant. The net charge $eZ_n$ grows with $Z$ until $Z$ exceeds $Z^* \simeq (R/a)^{9/7}$. After this point, the charge number of the compact core $Z_n$ remains $\simeq Z^*$, with the rest $Z^*$ electrons forming a sparse Thomas-Fermi electron atmosphere around it. We extend our results to the case of long cylindrical clusters as well.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hopping Conduction via Ionic Liquid Induced Silicon Surface States

In order to clarify the physics of the gating of solids by ionic liquids (ILs) we have gated lightly doped $p$-Si, which is so well studied that it can be called the "hydrogen atom of solid state physics" and can be used as a test bed for ionic liquids. We explore the case where the concentration of induced holes at the Si surface is below $10^{12}\text{cm}^{-2}$, hundreds of times smaller than record values. We find that in this case an excess negative ion binds a hole on the interface between the IL and Si becoming a surface acceptor. We study the surface conductance of holes hopping between such nearest neighbor acceptors. Analyzing the acceptor concentration dependence of this conductivity, we find that the localization length of a hole is in reasonable agreement with our direct variational calculation of its binding energy. The observed hopping conductivity resembles that of well studied $\text{Na}^{+}$ implanted Si MOSFETs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

This paper is focused on the the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration $n_c$ at which it becomes metallic. The hopping conductivity is described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the doping concentration $n$ in the film of touching NCs. For that we calculate the electron transfer matrix element $t(n)$ between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of $t(n)$ to the disorder-induced NC level dispersion to find the localization length of electrons due to the multi-step elastic co-tunneling process. We found three different phases at $n<n_c$ depending on the strength of disorder, the material, sizes of NCs and their facets: 1) "insulator" where the localization length of electrons increases monotonically with $n$ and 2) "oscillating insulator" when the localization length (and the conductivity) oscillates with $n$ from the insulator base and 3) "blinking metal" where the localization length periodically diverges. The first two phases were seen experimentally and we discuss how one can see the more exotic third one. In all three the localization length diverges at $n=n_c$. This allows us to find $n_c$.

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preprint2014arXiv

Bound state energy of a Coulomb impurity in gapped bilayer graphene: "Hydrogen atom with a Mexican hat"

Application of a perpendicular electric field induces a band gap in bilayer graphene, and it also creates a "Mexican hat" structure in the dispersion relation. This structure has unusual implications for the hydrogen-like bound state of an electron to a Coulomb impurity. We calculate the ground state energy of this hydrogen-like state as a function of the applied interlayer voltage and the effective fine structure constant. Unlike in the normal hydrogen atom, the resulting wavefunction has many nodes even in the ground state. Further, the electron state undergoes "atomic collapse" into the Dirac continuum both at small and large voltage.

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preprint2014arXiv

Carrier Transport in Films of Alkyl-Ligand-Terminated Silicon Nanocrystals

Silicon nanocrystals (Si NCs) have shown great promise for electroluminescent and photoluminescent applications. In order to optimize the properties of Si NC devices, however, electronic transport in Si NCs films needs to be thoroughly understood. Here we present a systematic study of the temperature and electric field dependence of conductivity in films of alkyl-ligand-terminated Si NCs, which to date have shown the highest potential for device applications. Our measurements suggest that the conductivity is limited by the ionization of rare NCs containing donor impurities. At low bias, this ionization is thermally activated, with an ionization energy equal to twice the NC charging energy. As the bias is increased, the ionization energy is reduced by the electric field, as determined by the Poole-Frenkel effect. At large bias and sufficiently low temperature, we observe cold ionization of electrons from donor-containing NCs, with a characteristic tunneling length of about 1 nm. The temperature- and electric-field-dependent conductance measurements presented here provide a systematic and comprehensive picture for electron transport in lightly doped nanocrystal films.

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preprint2014arXiv

Coulomb Gap in a Doped Semiconductor near the Metal-Insulator Transition: Tunneling Experiment and Scaling Ansatz

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density-of-states (DOS) of boron-doped silicon crystals near the critical density of the metal-insulator transition (MIT). At low energies, a DOS measurement distinguishes between insulating and metallic samples with densities 10 to 15 % on either side of the MIT. However, at higher energies the DOS of both insulators and metals show a common behavior, increasing roughly as the square-root of energy. The observed characteristics of the DOS can be understood using a classical treatment of Coulomb interactions combined with a phenomenological scaling ansatz to describe the length-scale dependence of the dielectric constant as the MIT is approached from the insulating side.

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preprint2014arXiv

Photoluminescence in array of doped semiconductor nanocrystals

We study the dependence of the quantum yield of photoluminescence of a dense, periodic array of semiconductor nanocrystals (NCs) on the level of doping and NC size. Electrons introduced to NCs via doping quench photoluminescence by the Auger process, so that practically only NCs without electrons contribute to the photoluminescence. Computer simulation and analytical theory are used to find a fraction of such empty NCs as a function of the average number of donors per NC and NC size. For an array of small spherical NCs, the quantization gap between 1S and 1P levels leads to transfer of electrons from NCs with large number of donors to those without donors. As a result, empty NCs become extinct, and photoluminescence is quenched abruptly at an average number of donors per NC close to 1.8. The relative intensity of photoluminescence is shown to correlate with the type of hopping conductivity of an array of NCs.

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preprint2014arXiv

Theory of a field effect transistor based on semiconductor nanocrystal array

We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array. Computer simulations and analytical theory are used to study the array screening and corresponding evolution of electron concentrations of the first and second layers with growing gate voltage. When first layer NCs have two electrons per NC the quantization energy gap between its 1S and 1P levels induces occupation of 1S levels of second layer NCs. Only at a larger gate voltage electrons start leaving 1S levels of second layer NCs and filling 1P levels of first layer NCs. By substantially larger gate voltage, all the electrons vacate the second layer and move to 1P levels of first layer NCs. As a result of this nontrivial evolution of the two layers concentrations, the surface conductivity of FET non-monotonically depends on the gate voltage. The same evolution of electron concentrations leads to non-monotonous behaviour of the differential capacitance.

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preprint2013arXiv

Anomalously small resistivity and thermopower of strongly compensated semiconductors and topological insulators

In the recent paper we explained why the maximum bulk resistivity of topological insulators (TIs)is so small [B. Skinner, T. Chen, and B. I. Shklovskii, Phys. Rev. Lett. 109, 176801 (2012)]. Using the model of completely compensated semiconductor we showed that when Fermi level is pinned in the middle of the gap the activation energy of resistivity $Δ=0.3 (E_g/2)$, where $E_g$ is the semiconductor gap. In this paper, we consider strongly compensated $n$-type semiconductor. We find position of the Fermi level $μ$ calculated from the bottom of the conduction band and the activation energy of the resistivity $Δ$ as a function of compensation $K$, and show that $Δ= 0.3 (E_c-μ) $ holds at any $1-K \ll 1$. At the same time Peltier energy (heat) $Π$ is even smaller: $Π\simeq 0.5Δ= 0.15(E_c - μ)$. We also show that at low temperatures the activated conductivity crosses over to variable range hopping (VRH) and find the characteristic temperature of VRH, $T_{ES}$, as a function of $1-K$.

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preprint2013arXiv

Effect of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to VRH at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential as one moves from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

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preprint2013arXiv

Giant capacitance of a plane capacitor with a two-dimensional electron gas in a magnetic field

If a clean two-dimensional electron gas (2DEG) with small concentration $n$ comprises one (or both) electrodes of a plane capacitor, the resulting capacitance $C$ can be larger than the "geometric capacitance" $C_g$ determined by the physical separation $d$ between electrodes. A recent paper [1] argued that when the effective Bohr radius $a_B$ of the 2DEG satisfies $a_B << d$, one can achieve $C >> C_g$ at low concentration $nd^2 << 1$. Here we show that even for devices with $a_B > d$, including graphene, for which $a_B$ is effectively infinite, one also arrives at $C >> C_g$ at low electron concentration if there is a strong perpendicular magnetic field.

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preprint2013arXiv

Many electron theory of 1/f-noise in hopping conductivity

We show that $1/f$-noise in the variable range hopping regime is related to transitions of many-electrons clusters (fluctuators) between two almost degenerate states. Giant fluctuation times necessary for $1/f$-noise are provided by slow rate of simultaneous tunneling of many localized electrons and by large activation barriers for their consecutive rearrangements. The Hooge constant steeply grows with decreasing temperature because it is easier to find a slow fluctuator at lower temperatures. Our conclusions qualitatively agree with the low temperature observations of $1/f$-noise in p-type silicon and GaAs.

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preprint2013arXiv

The effect of electron dielectric response on the quantum capacitance of graphene in a strong magnetic field

The quantum capacitance of graphene can be negative when the graphene is placed in a strong magnetic field, which is a clear experimental signature of positional correlations between electrons. Here we show that the quantum capacitance of graphene is also strongly affected by its dielectric polarizability, which in a magnetic field is wave vector-dependent. We study this effect both theoretically and experimentally. We develop a theory and numerical procedure for accounting for the graphene dielectric response, and we present measurements of the quantum capacitance of high-quality graphene capacitors on boron nitride. Theory and experiment are found to be in good agreement.

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preprint2013arXiv

Theory of the random potential and conductivity at the surface of a topological insulator

We study the disorder potential induced by random Coulomb impurities at the surface of a topological insulator (TI). We use a simple model in which positive and negative impurities are distributed uniformly throughout the bulk of the TI, and we derive the magnitude of the disorder potential at the TI surface using a self-consistent theory based on the Thomas-Fermi approximation for screening by the Dirac mode. Simple formulas are presented for the mean squared potential both at the Dirac point and far from it, as well as for the characteristic size of electron/hole puddles at the Dirac point and the total concentration of electrons/holes that they contain. We also derive an expression for the autocorrelation function for the potential at the surface and show that it has an unusually slow decay, which can be used to verify the bulk origin of disorder. The implications of our model for the electron conductivity of the surface are also presented.

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preprint2012arXiv

Anomalously large capacitance of a plane capacitor with a two-dimensional electron gas

In electronic devices where a two-dimensional electron gas (2DEG) comprises one or both sides of a plane capacitor, the resulting capacitance $C$ can be larger than the "geometric capacitance" $C_g$ determined by the physical separation $d$ between electrodes. This larger capacitance is known to result from the Coulomb correlations between individual electrons within the low density 2DEG, which lead to a negative thermodynamic density of states (negative compressibility). Experiments on such systems generally operate in the regime where the average spacing between electrons $n^{-1/2}$ in the 2DEG is smaller than $d$, and these experiments observe $C > C_g$ by only a few percent. A recent experiment [1], however, has observed $C$ larger than $C_g$ by almost 40% while operating in the regime $nd^2 << 1$. In this paper we argue that at $nd^2 << 1$ correlations between the electronic charge of opposite electrodes become important. We develop a theory of the capacitance for the full range of $nd^2$. We show that, in the absence of disorder, the capacitance can be $4d/a$ times larger than the geometric value, where $a << d$ is the electron Bohr radius. Our results compare favorably with the experiment of Ref. [1] without the use of adjustable parameters.

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preprint2012arXiv

Coulomb gap triptych in a periodic array of metal nanocrystals

The Coulomb gap in the single particle density of states (DOS) is a universal consequence of electron-electron interaction in disordered systems with localized electron states. Here we show that in arrays of monodisperse metallic nanocrystals, there is not one but three identical adjacent Coulomb gaps, which together form a structure that we call a "Coulomb gap triptych." We calculate the DOS and the conductivity in two- and three-dimensional arrays using a computer simulation. Unlike in the conventional Coulomb glass models, in nanocrystal arrays the DOS has a fixed width in the limit of large disorder. The Coulomb gap triptych can be studied via tunneling experiments.

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preprint2012arXiv

Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains

In granular superconductors, individual grains can contain bound Cooper pairs while the system as a whole is strongly insulating. In such cases the conductivity is determined by electron hopping between localized states in individual grains. Here we examine a model of hopping conductivity in such an insulating granular superconductor, where disorder is assumed to be provided by random charges embedded in the insulating gaps between grains. We use computer simulations to calculate the single-electron and electron pair density of states at different values of the superconducting gap $Δ$, and we identify "triptych" symmetries and scaling relations between them. At a particular critical value of $Δ$, one can define an effective charge $\sqrt{2}e$ that characterizes the density of states and the hopping transport. We discuss the implications of our results for magnetoresistance and tunneling experiments.

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preprint2012arXiv

Theory of hopping conduction in arrays of doped semiconductor nanocrystals

The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction through the array will be characterized by activated nearest-neighbor hopping or variable-range hopping (VRH). Thus far, no general theory exists to explain how these different behaviors arise at different doping levels and for different types of NCs. In this paper we examine a simple theoretical model of an array of doped semiconductor NCs that can explain the transition from activated transport to VRH. We show that in sufficiently small NCs, the fluctuations in donor number from one NC to another provide sufficient disorder to produce charging of some NCs, as electrons are driven to vacate higher shells of the quantum confinement energy spectrum. This confinement-driven charging produces a disordered Coulomb landscape throughout the array and leads to VRH at low temperature. We use a simple computer simulation to identify different regimes of conduction in the space of temperature, doping level, and NC diameter. We also discuss the implications of our results for large NCs with external impurity charges and for NCs that are gated electrochemically.

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preprint2012arXiv

Why is the bulk resistivity of topological insulators so small?

As-grown topological insulators (TIs) are typically heavily-doped $n$-type crystals. Compensation by acceptors is used to move the Fermi level to the middle of the band gap, but even then TIs have a frustratingly small bulk resistivity. We show that this small resistivity is the result of band bending by poorly screened fluctuations in the random Coulomb potential. Using numerical simulations of a completely compensated TI, we find that the bulk resistivity has an activation energy of just 0.15 times the band gap, in good agreement with experimental data. At lower temperatures activated transport crosses over to variable range hopping with a relatively large localization length.

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preprint2011arXiv

A model of large volumetric capacitance in graphene supercapacitors based on ion clustering

Electric double layer supercapacitors are promising devices for high-power energy storage based on the reversible absorption of ions into porous, conducting electrodes. Graphene is a particularly good candidate for the electrode material in supercapacitors due to its high conductivity and large surface area. In this paper we consider supercapacitor electrodes made from a stack of graphene sheets with randomly-inserted "spacer" molecules. We show that the large volumetric capacitances C > 100 F/cm^3 observed experimentally can be understood as a result of collective intercalation of ions into the graphene stack and the accompanying nonlinear screening by graphene electrons that renormalizes the charge of the ion clusters.

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preprint2011arXiv

Cooperative Charging in a Nanocrystal Assembly Gated By Ionic Liquid

In order to make a densely packed assembly of undoped semiconductor nanocrystals conductive, it is usually gated by a room temperature ionic liquid. The ionic liquid enters the pores of the super-crystal assembly under the influence of an applied voltage. We study the capacitance of such a device as a function of the gate voltage. We show that, counter-intuitively, the capacitance of the system is the sum of delta-functions located at a sequence of critical gate voltages. At each critical voltage every nanocrystal acquires one additional electron.

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preprint2011arXiv

Coulomb gap in the one-particle density of states in three-dimensional systems with localized electrons

The one-particle density of states (1P-DOS) in a system with localized electron states vanishes at the Fermi level due to the Coulomb interaction between electrons. Derivation of the Coulomb gap uses stability criteria of the ground state. The simplest criterion is based on the excitonic interaction of an electron and a hole and leads to a quadratic 1P-DOS in the three-dimensional (3D) case. In 3D, higher stability criteria, including two or more electrons, were predicted to exponentially deplete the 1P-DOS at energies close enough to the Fermi level. In this paper we show that there is a range of intermediate energies where this depletion is strongly compensated by the excitonic interaction between single-particle excitations, so that the crossover from quadratic to exponential behavior of the 1P-DOS is retarded. This is one of the reasons why such exponential depletion was never seen in computer simulations.

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preprint2011arXiv

Theory of volumetric capacitance of an electric double-layer supercapacitor

Electric double layer supercapacitors are a fast-rising class of high-power energy storage devices based on porous electrodes immersed in a concentrated electrolyte or ionic liquid. As of yet there is no microscopic theory to describe their surprisingly large capacitance per unit volume (volumetric capacitance) of ~ 100 F/cm^3, nor is there a good understanding of the fundamental limits on volumetric capacitance. In this paper we present a non-mean-field theory of the volumetric capacitance of a supercapacitor that captures the discrete nature of the ions and the exponential screening of their repulsive interaction by the electrode. We consider analytically and via Monte-Carlo simulations the case of an electrode made from a good metal and show that in this case the volumetric capacitance can reach the record values. We also study how the capacitance is reduced when the electrode is an imperfect metal characterized by some finite screening radius. Finally, we argue that a carbon electrode, despite its relatively large linear screening radius, can be approximated as a perfect metal because of its strong nonlinear screening. In this way the experimentally-measured capacitance values of ~ 100 F/cm^3 may be understood.

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preprint2010arXiv

Anomalously large capacitance of an ionic liquid described by the restricted primitive model

We use Monte Carlo simulations to examine the simplest model of an ionic liquid, called the restricted primitive model, at a metal surface. We find that at moderately low temperatures the capacitance of the metal/ionic liquid interface is so large that the effective thickness of the electrostatic double-layer is up to 3 times smaller than the ion radius. To interpret these results we suggest an approach which is based on the interaction between discrete ions and their image charges in the metal surface and which therefore goes beyond the mean-field approximation. When a voltage is applied across the interface, the strong image attraction causes counterions to condense onto the metal surface to form compact ion-image dipoles. These dipoles repel each other to form a correlated liquid. When the surface density of these dipoles is low, the insertion of an additional dipole does not require much energy. This leads to a large capacitance $C$ that decreases monotonically with voltage $V$, producing a "bell-shaped" curve $C(V)$. We also consider what happens when the electrode is made from a semi-metal rather than a perfect metal. In this case, the finite screening radius of the electrode shifts the reflection plane for image charges to the interior of the electrode and we arrive at a "camel-shaped" $C(V)$. These predictions seem to be in qualitative agreement with experiment.

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preprint2010arXiv

Capacitance of the Double Layer Formed at the Metal/Ionic-Conductor Interface: How Large Can It Be?

The capacitance of the double layer formed at a metal/ionic-conductor interface can be remarkably large, so that the apparent width of the double layer is as small as 0.3 Å. Mean-field theories fail to explain such large capacitance. We propose an alternate theory of the ionic double layer which allows for the binding of discrete ions to their image charges in the metal. We show that at small voltages the capacitance of the double layer is limited only by the weak dipole-dipole repulsion between bound ions, and is therefore very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the mean-field value.

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preprint2010arXiv

Non-mean-field theory of anomalously large double-layer capacitance

Mean-field theories claim that the capacitance of the double-layer formed at a metal/ionic conductor interface cannot be larger than that of the Helmholtz capacitor, whose width is equal to the radius of an ion. However, in some experiments the apparent width of the double-layer capacitor is substantially smaller. We propose an alternate, non-mean-field theory of the ionic double-layer to explain such large capacitance values. Our theory allows for the binding of discrete ions to their image charges in the metal, which results in the formation of interface dipoles. We focus primarily on the case where only small cations are mobile and other ions form an oppositely-charged background. In this case, at small temperature and zero applied voltage dipoles form a correlated liquid on both contacts. We show that at small voltages the capacitance of the double-layer is determined by the transfer of dipoles from one electrode to the other and is therefore limited only by the weak dipole-dipole repulsion between bound ions, so that the capacitance is very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the much smaller mean-field value, as seen in experimental data. We test our analytical predictions with a Monte Carlo simulation and find good agreement. We further argue that our ``one-component plasma" model should work well for strongly asymmetric ion liquids. We believe that this work also suggests an improved theory of pseudo-capacitance.

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preprint2009arXiv

Non-mean-field screening by multivalent counterions

Screening of a strongly charged macroion by its multivalent counterions can not be described in the framework of mean field Poisson-Boltzmann (PB) theory because multivalent counterions form a strongly correlated liquid (SCL) on the surface of the macroion. It was predicted that a distant counterion polarizes the SCL as if it were a metallic surface and creates an electrostatic image. The attractive potential energy of the image is the reason why the charge density of counterions decreases faster with distance from the charged surface than in PB theory. Using the Monte Carlo method to find the equilibrium distribution of counterions around the macroion, we confirm the existence of the image potential energy. It is also shown that due to the negative screening length of the SCL, $-2ξ$, the effective metallic surface is actually above the SCL by $|ξ|$.

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preprint2007arXiv

Electrostatic theory of viral self-assembly: a toy model

Viruses self-assemble from identical capsid proteins and their genome consisting, for example, of a long single stranded (ss) RNA. For a big class of T = 3 viruses capsid proteins have long positive N-terminal tails. We explore the role played by the Coulomb interaction between the brush of positive N-terminal tails rooted at the inner surface of the capsid and the negative ss RNA molecule. We show that viruses are most stable when the total contour length of ss RNA is close to the total length of the tails. For such a structure the absolute value of the total RNA charge is approximately twice larger than the charge of the capsid. This conclusion agrees with structural data.

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preprint2007arXiv

How a protein searches for its specific site on DNA: the role of intersegment transfer

Proteins are known to locate their specific targets on DNA up to two orders of magnitude faster than predicted by the Smoluchowski three-dimensional diffusion rate. One of the mechanisms proposed to resolve this discrepancy is termed "intersegment transfer". Many proteins have two DNA binding sites and can transfer from one DNA segment to another without dissociation to water. We calculate the target search rate for such proteins in a dense globular DNA, taking into account intersegment transfer working in conjunction with DNA motion and protein sliding along DNA. We show that intersegment transfer plays a very important role in cases where the protein spends most of its time adsorbed on DNA.

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preprint2005arXiv

How do proteins search for their specific sites on coiled or globular DNA

It is known since the early days of molecular biology that proteins locate their specific targets on DNA up to two orders of magnitude faster than the Smoluchowski 3D diffusion rate. It was the idea due to Delbruck that they are non-specifically adsorbed on DNA, and sliding along DNA provides for the faster 1D search. Surprisingly, the role of DNA conformation was never considered in this context. In this article, we explicitly address the relative role of 3D diffusion and 1D sliding along coiled or globular DNA and the possibility of correlated re-adsorbtion of desorbed proteins. We have identified a wealth of new different scaling regimes. We also found the maximal possible acceleration of the reaction due to sliding, we found that the maximum on the rate-versus-ionic strength curve is asymmetric, and that sliding can lead not only to acceleration, but in some regimes to dramatic deceleration of the reaction.

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preprint2005arXiv

Transport in one dimensional Coulomb gases: From ion channels to nanopores

We consider a class of systems where, due to the large mismatch of dielectric constants, the Coulomb interaction is approximately one-dimensional. Examples include ion channels in lipid membranes and water filled nanopores in silicon or cellulose acetate films. Charge transport across such systems possesses the activation behavior associated with the large electrostatic self-energy of a charge placed inside the channel. We show here that the activation barrier exhibits non-trivial dependence on the salt concentration in the surrounding water solution and on the length and radius of the channel.

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preprint2001arXiv

Tunneling between two semiconductors with localized electrons: Can it reveal the Coulomb gap?

It is shown that the voltage dependence of the tunneling conductance between two lightly doped semiconductors, which are separated by an large area tunneling barrier, can reveal the high energy part of the Coulomb gap if the barrier is thick enough. At the barrier thickness smaller than average distance between impurities no Coulomb gap feature can be found. This happens because such tunneling is sensitive to very rare shortest pairs of occupied and empty states localized at opposite sides of the barrier, whose density of states in this limit has no Coulomb gap. Small area tunneling contacts are also discussed. It is shown that the tunneling conductance of a point-like contact exponentialy grows with the applied voltage. This dependence does not permit a direct measurement of the Coulomb gap, but indirectly has information about it.

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