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Researcher profile

B. I. Shklovskii

B. I. Shklovskii contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-mat.soft

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Published work

9 published item(s)

preprint2022arXiv

Biexciton crystal in a two-dimensional semiconductor heteropentalayer

This paper is written for the Special Issue in Honor of Emmanuel Rashba. We study the gas of indirect dipolar excitons created by an interband illumination of a pentalayer WSe$_2$/MoSe$_2$/WSe$_2$/MoSe$_2$/WSe$_2$. We show that two colinear indirect excitons bind into a linear biexciton with twice larger dipole moment. Two biexcitons with opposite dipole directions attract each other at large distances and repel each other at short distances. Therefore, biexcitons form a staggered crystal with anti-ferroelectric square lattice. The electrostatic energy of this crystal per biexciton has a minimum at the biexciton concentration $n =n_c=0.14d^{-2}$, where $d \sim 0.7$ nm is a single layer thickness. At small illumination intensity, biexcitons condense into sparse crystallites with $n = n_c$, where photoluminescence frequency is red shifted and independent on the light intensity. We also study a capacitor made of five identical semiconductor monolayers separated by hBN spacers where a critical voltage applied between layers 1, 3, 5, and 2, 4 abruptly creates a similar biexciton crystal. At this voltage, the differential capacitance diverges.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder

In the ideal disorder-free situation, a two-dimensional band gap insulator has an activation energy for conductivity equal to half the band gap $Δ$. But transport experiments usually exhibit a much smaller activation energy at low temperature, and the relation between this activation energy and $Δ$ is unclear. Here we consider the temperature-dependent conductivity of a two-dimensional insulator on a substrate containing Coulomb impurities, with random potential amplitude $Γ\gg Δ$. We show that the conductivity generically exhibits three regimes of conductivity, and only the highest temperature regime exhibits an activation energy that reflects the band gap. At lower temperatures, the conduction proceeds through activated hopping or Efros-Shklovskii variable-range hopping between electron and hole puddles created by the disorder. We show that the activation energy and characteristic temperature associated with these processes steeply collapse near a critical impurity concentration. Larger concentrations lead to an exponentially small activation energy and exponentially long localization length, which in mesoscopic samples can appear as a disorder-induced insulator-to-metal transition. We also arrive at a similar steep disorder driven insulator-metal transition in thin films of three-dimensional topological insulators with large dielectric constant, for which Coulomb impurities inside the film create a large disorder potential due to confinement of their electric field inside the film.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Plasmons in semiconductor and topological insulator wires with large dielectric constant

The dispersion law of plasmons running along thin wires with radius $a$ is known to be practically linear. We show that in a wire with a dielectric constant $κ$ much larger than that of its environment $κ_e$, such dispersion law crosses over to a dispersionless three-dimensional-like law when the plasmon wavelength becomes shorter than the length $(a/2) \sqrt{(κ/κ_e)\ln(κ/2κ_e)}$ at which the electric field lines of a point charge exit from the wire to the environment. This happens both in trivial semiconductor wires and wires of three-dimensional topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Scattering mechanisms in state-of-the-art GaAs/AlGaAs quantum wells

Motivated by recent breakthrough in molecular beam epitaxy of GaAs/AlGaAs quantum wells [Y. J. Chung \textit{et al.}, Nature Materials \textbf{20}, 632 (2021)], we examine contributions to mobility and quantum mobility from various scattering mechanisms and their dependencies on the electron density. We find that at lower electron densities, $n_e \lesssim 1 \times 10^{11}$ cm$^{-2}$, both transport and quantum mobility are limited by unintentional background impurities and follow a power law dependence, $\propto n_e^α$, with $α\approx 0.85$. Our predictions for quantum mobility are in reasonable agreement with an estimate obtained from the resistivity at filling factor $ν= 1/2$ in a sample of Y. J. Chung \textit{et al.} with $n_e = 1 \times 10^{11}$ cm$^{-2}$. Consideration of other scattering mechanisms indicates that interface roughness (remote donors) is a likely limiting factor of transport (quantum) mobility at higher electron densities. Future measurements of quantum mobility should yield information on the distribution of background impurities in GaAs and AlGaAs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Anderson transition in three-dimensional systems with non-Hermitian disorder

We study the Anderson transition for three-dimensional (3D) $N \times N \times N$ tightly bound cubic lattices where both real and imaginary parts of onsite energies are independent random variables distributed uniformly between $-W/2$ and $W/2$. Such a non-Hermitian analog of the Anderson model is used to describe random-laser medium with local loss and amplification. We employ eigenvalue statistics to search for the Anderson transition. For 25\% smallest-modulus complex eigenvalues we find the average ratio $r$ of distances to the first and the second nearest neighbor as a function of $W$. For a given $N$ the function $r(W)$ crosses from $0.72$ to 2/3 with a growing $W$ demonstrating a transition from delocalized to localized states. When plotted at different $N$ all $r(W)$ cross at $W_c = 6.0 \pm 0.1$ (in units of nearest neighbor overlap integral) clearly demonstrating the 3D Anderson transition. We find that in the non-Hermitian 2D Anderson model, the transition is replaced by a crossover.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Isotropically conducting (hidden) quantum Hall stripe phases in a two-dimensional electron gas

Quantum Hall stripe (QHS) phases, predicted by the Hartree-Fock theory, are manifested in GaAs-based two-dimensional electron gases as giant resistance anisotropies. Here, we predict a ``hidden'' QHS phase which exhibits \emph{isotropic} resistivity whose value, determined by the density of states of QHS, is independent of the Landau index $N$ and is inversely proportional to the Drude conductivity at zero magnetic field. At high enough $N$, this phase yields to an Ando-Unemura-Coleridge-Zawadski-Sachrajda phase in which the resistivity is proportional to $1/N$ and to the ratio of quantum and transport lifetimes. Experimental observation of this border should allow one to find the quantum relaxation time.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spectral rigidity of non-Hermitian symmetric random matrices near Anderson transition

We study the spectral rigidity of the non-Hermitian analog of the Anderson model suggested by Tzortzakakis, Makris and Economou (TME). This is a $L\times L \times L$ tightly bound cubic lattice, where both real and imaginary parts of on-site energies are independent random variables uniformly distributed between $-W/2$ and $W/2$. The TME model may be used to describe a random laser. In a recent paper we proved that this model has the Anderson transition at $W= W_c \simeq 6$ in three dimension. Here we numerically diagonalize TME $L \times L \times L$ cubic lattice matrices and calculate the number variance of eigenvalues in a disk of their complex plane. We show that on the metallic side $W < 6$ of the Anderson transition, complex eigenvalues repel each other as strongly as in the complex Ginibre ensemble only in a disk containing $N_c(L,W)$ eigenvalues. We find that $N_c(L,W)$ is proportional to $L$ and grows with decreasing $W$ similarly to the number of energy levels $N_c$ in the Thouless energy band of the Anderson model.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Capacitance of the Double Layer Formed at the Metal/Ionic-Conductor Interface: How Large Can It Be?

The capacitance of the double layer formed at a metal/ionic-conductor interface can be remarkably large, so that the apparent width of the double layer is as small as 0.3 Å. Mean-field theories fail to explain such large capacitance. We propose an alternate theory of the ionic double layer which allows for the binding of discrete ions to their image charges in the metal. We show that at small voltages the capacitance of the double layer is limited only by the weak dipole-dipole repulsion between bound ions, and is therefore very large. At large voltages the depletion of bound ions from one of the capacitor electrodes triggers a collapse of the capacitance to the mean-field value.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Non-mean-field screening by multivalent counterions

Screening of a strongly charged macroion by its multivalent counterions can not be described in the framework of mean field Poisson-Boltzmann (PB) theory because multivalent counterions form a strongly correlated liquid (SCL) on the surface of the macroion. It was predicted that a distant counterion polarizes the SCL as if it were a metallic surface and creates an electrostatic image. The attractive potential energy of the image is the reason why the charge density of counterions decreases faster with distance from the charged surface than in PB theory. Using the Monte Carlo method to find the equilibrium distribution of counterions around the macroion, we confirm the existence of the image potential energy. It is also shown that due to the negative screening length of the SCL, $-2ξ$, the effective metallic surface is actually above the SCL by $|ξ|$.

0 citations0 reviewsNo code linkedOpen access