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Tianran Chen

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Published work

21 published item(s)

preprint2026arXiv

S2FT: Parameter-Efficient Fine-Tuning in Sparse Spectrum Domain

Parameter Efficient Fine-Tuning (PEFT) is a key technique for adapting a large pretrained model to downstream tasks by fine-tuning only a small number of parameters. Recent methods based on Fourier transforms have further reduced the fine-tuned parameters scale by only fine-tuning a few spectral coefficients. Its basic assumption is that the weight change δW is a spatial-domain matrix with a sparse spectrum. However, in this paper, we observe that the spectrum of weight change is not sparse, but instead distributed like power-uniform. This fact implies that fine-tuning only a few spectral coefficients is insufficient to accurately model the weight change with uniform spectrum. To address this issue, we propose to seek an invertible transformation that can transform a latent spatial-domain matrix with sparse spectrum to the weight change, and then perform PEFT on such sparse spectrum domain with few spectral coefficients, called S2FT. To seek such transformation, we first pre-estimate a coarse weight change as a prior. Then, inspired by that sparse spectrum often correspond to locally smooth spatial structures, we regard this transformation as a row and column rearrangement operation on the pre-estimated weight change that smooth spatial structures while keep the structure information of neurons. Finally, we propose to solve the rearrangement search problem in a simple nearest neighbor search manner, thereby obtaining the invertible transformation. Extensive results show our S2FT achieves superior performance by only using 0.08% training parameters.

preprint2022arXiv

Computing Volumes of Adjacency Polytopes via Draconian Sequences

Adjacency polytopes appear naturally in the study of nonlinear emergent phenomena in complex networks. The "PQ-type" adjacency polytope, denoted $\nabla^{\mathrm{PQ}}_G$ and which is the focus of this work, encodes rich combinatorial information about power-flow solutions in sparse power networks that are studied in electric engineering. Of particular importance is the normalized volume of such an adjacency polytope, which provides an upper bound on the number of distinct power-flow solutions. In this article we show that the problem of computing normalized volumes for $\nabla^{\mathrm{PQ}}_G$ can be rephrased as counting $D(G)$-draconian sequences where $D(G)$ is a certain bipartite graph associated to the network. We prove recurrences for all networks with connectivity at most $1$ and, for $2$-connected graphs under certain restrictions, we give recurrences for subdividing an edge and taking the join of an edge with a new vertex. Together, these recurrences imply a simple, non-recursive formula for the normalized volume of $\nabla^{\mathrm{PQ}}_G$ when $G$ is part of a large class of outerplanar graphs; we conjecture that the formula holds for all outerplanar graphs. Explicit formulas for several other (non-outerplanar) classes are given. Further, we identify several important classes of graphs $G$ which are planar but not outerplanar that are worth additional study.

preprint2021arXiv

Lattice and magnetic dynamics in YVO$_{3}$ Mott insulator studied by neutron scattering and first-principles calculations

The Mott insulator YVO$_{3}$ with $T_{N}$ = 118 K is revisited to explore the role of spin, lattice and orbital correlations across the multiple structural and magnetic transitions observed as a function of temperature. Upon cooling, the crystal structure changes from orthorhombic to monoclinic at 200 K, and back to orthorhombic at 77 K, followed by magnetic transitions. From the paramagnetic high temperature phase, C-type ordering is first observed at 118 K, followed by a G-type spin re-orientation transition at 77 K. The dynamics of the transitions were investigated via inelastic neutron scattering and first principles calculations. An overall good agreement between the neutron data and calculated spectra was observed. From the magnon density of states, the magnetic exchange constants were deduced to be $J_{ab}$ = $J_{c}$ = -5.8 meV in the G-type spin phase, and $J_{ab}$ = -3.8 meV, $J_{c}$ = 7.6 meV at 80 K and $J_{ab}$ = -3.0 meV, $J_{c}$ = 6.0 meV at 100 K in the C-type spin phase. Paramagnetic scattering was observed in the spin ordered phases, well below the C-type transition temperature, that continuously increased above the transition. Fluctuations in the temperature dependence of the phonon density of states were observed between 50 and 80 K as well, coinciding with the G-type to C-type transition. These fluctuations are attributed to optical oxygen modes above 40 meV, from first principles calculations. In contrast, little change in the phonon spectra is observed across $T_{N}$.

preprint2020arXiv

Graph edge contraction and subdivisions for adjacency polytopes

Adjacency polytopes, a.k.a. symmetric edge polytopes, associated with undirected graphs have been defined and studied in several seemingly independent areas including number theory, discrete geometry, and dynamical systems. In particular, the authors are motivated by the tropical intersections problem derived from the Kuramoto equations. Regular subdivisions of adjacency polytopes are instrumental in solving these problems. This paper explores connections between the regular subdivisions of an adjacency polytope and the contraction of the underlying graph along an edge. We construct a special regular subdivision whose cells are in one-to-one correspondence with facets of an adjacency polytope associated with an edge-contraction of the original graph. Moreover, this subdivision induces a decomposition of the original graph into ``cell subgraphs''. We explore the combinatorial, graph-theoretic, and matroidal aspects of this connection.

preprint2020arXiv

Temporally-decoherent and spatially-coherent vibrations in metal halide perovskite

The long carrier lifetime and defect tolerance in metal halide perovskites (MHPs) are major contributors to the superb performance of MHP optoelectronic devices. Large polarons were reported to be responsible for the long carrier lifetime. Yet microscopic mechanisms of the large polaron formation including the so-called phonon melting, are still under debate. Here, time-of-flight (TOF) inelastic neutron scattering (INS) experiments and first-principles density-functional theory (DFT) calculations were employed to investigate the lattice vibrations (or phonon dynamics) in methylammonium lead iodide ($\rm{MAPbI_3}$), a prototypical example of MHPs. Our findings are that optical phonons lose temporal coherence gradually with increasing temperature which vanishes at the orthorhombic-to-tetragonal structural phase transition. Surprisingly, however, we found that the spatial coherence is still retained throughout the decoherence process. We argue that the temporally decoherent and spatially coherent vibrations contribute to the formation of large polarons in this metal halide perovskite.

preprint2016arXiv

Enhancement of hopping conductivity by spontaneous fractal ordering of low-energy sites

Variable-range hopping conductivity has long been understood in terms of a canonical prescription for relating the single-particle density of states to the temperature-dependent conductivity. Here we demonstrate that this prescription breaks down in situations where a large and long-ranged random potential develops. In particular, we examine a canonical model of a completely compensated semiconductor, and we show that at low temperatures hopping proceeds along self-organized, low-dimensional subspaces having fractal dimension $d = 2$. We derive and study numerically the spatial structure of these subspaces, as well as the conductivity and density of states that result from them. One of our prominent findings is that fractal ordering of low energy sites greatly enhances the hopping conductivity, and allows Efros-Shklovskii type conductivity to persist up to unexpectedly high temperatures.

preprint2015arXiv

An index-resolved fixed-point homotopy and potential energy landscapes

Stationary points (SPs) of the potential energy landscapes can be classified by their Morse index, i.e., the number of negative eigenvalues of the Hessian evaluated at the SPs. In understanding chemical clusters through their potential energy landscapes, only SPs of a particular Morse index are needed. We propose a modification of the "fixed-point homotopy" method which can be used to directly target stationary points of a specified Morse index. We demonstrate the effectiveness of our approach by applying it to the Lennard-Jones clusters.

preprint2015arXiv

On the Network Topology Dependent Solution Count of the Algebraic Load Flow Equations

A large amount of research activity in power systems areas has focused on developing computational methods to solve load flow equations where a key question is the maximum number of isolated solutions.Though several concrete upper bounds exist, recent studies have hinted that much sharper upper bounds that depend the topology of underlying power networks may exist. This paper establishes such a topology dependent solution bound which is actually the best possible bound in the sense that it is always attainable. We also develop a geometric construction called adjacency polytope which accurately captures the topology of the underlying power network and is immensely useful in the computation of the solution bound. Finally we highlight the significant implications of the development of such solution bound in solving load flow equations.

preprint2015arXiv

Parallel degree computation for solution space of binomial systems with an application to the master space of $\mathcal{N}=1$ gauge theories

The problem of solving a system of polynomial equations is one of the most fundamental problems in applied mathematics. Among them, the problem of solving a system of binomial equations form a important subclass for which specialized techniques exist. For both theoretic and applied purposes, the degree of the solution set of a system of binomial equations often plays an important role in understanding the geometric structure of the solution set. Its computation, however, is computationally intensive. This paper proposes a specialized parallel algorithm for computing the degree on GPUs that takes advantage of the massively parallel nature of GPU devices. The preliminary implementation shows remarkable efficiency and scalability when compared to the closest CPU-based counterpart. Applied to the "master space problem of $\mathcal{N}=1$ gauge theories" the GPU-based implementation achieves nearly 30 fold speedup over its CPU-only counterpart enabling the discovery of previously unknown results. Equally important to note is the far superior scalability: with merely 3 GPU devices on a single workstation, the GPU-based implementation shows better performance, on certain problems, than a small cluster totaling 100 CPU cores.

preprint2014arXiv

Communication: Newton homotopies for sampling stationary points of potential energy landscapes

One of the most challenging and frequently arising problems in many areas of science is to find solutions of a system of multivariate nonlinear equations. There are several numerical methods that can find many (or all if the system is small enough) solutions but they each exhibit characteristic problems. Moreover, traditional methods can break down if the system contains singular solutions. Here, we propose an efficient implementation of Newton homotopies, which can sample a large number of the stationary points of complicated many-body potentials. We demonstrate how the procedure works by applying it to the nearest-neighbor $ϕ^4$ model and atomic clusters.

preprint2014arXiv

Photoluminescence in array of doped semiconductor nanocrystals

We study the dependence of the quantum yield of photoluminescence of a dense, periodic array of semiconductor nanocrystals (NCs) on the level of doping and NC size. Electrons introduced to NCs via doping quench photoluminescence by the Auger process, so that practically only NCs without electrons contribute to the photoluminescence. Computer simulation and analytical theory are used to find a fraction of such empty NCs as a function of the average number of donors per NC and NC size. For an array of small spherical NCs, the quantization gap between 1S and 1P levels leads to transfer of electrons from NCs with large number of donors to those without donors. As a result, empty NCs become extinct, and photoluminescence is quenched abruptly at an average number of donors per NC close to 1.8. The relative intensity of photoluminescence is shown to correlate with the type of hopping conductivity of an array of NCs.

preprint2014arXiv

Theory of a field effect transistor based on semiconductor nanocrystal array

We study the surface conductivity of a field-effect transistor (FET) made of periodic array of spherical semiconductor nanocrystals (NCs). We show that electrons introduced to NCs by the gate voltage occupy one or two layers of the array. Computer simulations and analytical theory are used to study the array screening and corresponding evolution of electron concentrations of the first and second layers with growing gate voltage. When first layer NCs have two electrons per NC the quantization energy gap between its 1S and 1P levels induces occupation of 1S levels of second layer NCs. Only at a larger gate voltage electrons start leaving 1S levels of second layer NCs and filling 1P levels of first layer NCs. By substantially larger gate voltage, all the electrons vacate the second layer and move to 1P levels of first layer NCs. As a result of this nontrivial evolution of the two layers concentrations, the surface conductivity of FET non-monotonically depends on the gate voltage. The same evolution of electron concentrations leads to non-monotonous behaviour of the differential capacitance.

preprint2013arXiv

Anomalously small resistivity and thermopower of strongly compensated semiconductors and topological insulators

In the recent paper we explained why the maximum bulk resistivity of topological insulators (TIs)is so small [B. Skinner, T. Chen, and B. I. Shklovskii, Phys. Rev. Lett. 109, 176801 (2012)]. Using the model of completely compensated semiconductor we showed that when Fermi level is pinned in the middle of the gap the activation energy of resistivity $Δ=0.3 (E_g/2)$, where $E_g$ is the semiconductor gap. In this paper, we consider strongly compensated $n$-type semiconductor. We find position of the Fermi level $μ$ calculated from the bottom of the conduction band and the activation energy of the resistivity $Δ$ as a function of compensation $K$, and show that $Δ= 0.3 (E_c-μ) $ holds at any $1-K \ll 1$. At the same time Peltier energy (heat) $Π$ is even smaller: $Π\simeq 0.5Δ= 0.15(E_c - μ)$. We also show that at low temperatures the activated conductivity crosses over to variable range hopping (VRH) and find the characteristic temperature of VRH, $T_{ES}$, as a function of $1-K$.

preprint2013arXiv

Effect of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultra-relativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to VRH at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential as one moves from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

preprint2013arXiv

Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition

The evolution with carrier concentration of the electrical properties of amorphous indium oxide (InO) thin films has been studied using electronic double layer transistor configurations. Carrier variations of up to 7 X 10^(14) carriers/cm^2 were achieved using an ionic liquid as a gate dielectric. The superconductor-insulator transition was traversed and the magnitude and position of the large magnetoresistance peak found in the insulating regime were modified. The systematic variation of the magnetoresistance peak with charge concentration was found to be qualitatively consistent with a simulation based on a model involving granularity.

preprint2012arXiv

Coulomb gap triptych in a periodic array of metal nanocrystals

The Coulomb gap in the single particle density of states (DOS) is a universal consequence of electron-electron interaction in disordered systems with localized electron states. Here we show that in arrays of monodisperse metallic nanocrystals, there is not one but three identical adjacent Coulomb gaps, which together form a structure that we call a "Coulomb gap triptych." We calculate the DOS and the conductivity in two- and three-dimensional arrays using a computer simulation. Unlike in the conventional Coulomb glass models, in nanocrystal arrays the DOS has a fixed width in the limit of large disorder. The Coulomb gap triptych can be studied via tunneling experiments.

preprint2012arXiv

Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains

In granular superconductors, individual grains can contain bound Cooper pairs while the system as a whole is strongly insulating. In such cases the conductivity is determined by electron hopping between localized states in individual grains. Here we examine a model of hopping conductivity in such an insulating granular superconductor, where disorder is assumed to be provided by random charges embedded in the insulating gaps between grains. We use computer simulations to calculate the single-electron and electron pair density of states at different values of the superconducting gap $Δ$, and we identify "triptych" symmetries and scaling relations between them. At a particular critical value of $Δ$, one can define an effective charge $\sqrt{2}e$ that characterizes the density of states and the hopping transport. We discuss the implications of our results for magnetoresistance and tunneling experiments.

preprint2012arXiv

Theory of hopping conduction in arrays of doped semiconductor nanocrystals

The resistivity of a dense crystalline array of semiconductor nanocrystals (NCs) depends in a sensitive way on the level of doping as well as on the NC size and spacing. The choice of these parameters determines whether electron conduction through the array will be characterized by activated nearest-neighbor hopping or variable-range hopping (VRH). Thus far, no general theory exists to explain how these different behaviors arise at different doping levels and for different types of NCs. In this paper we examine a simple theoretical model of an array of doped semiconductor NCs that can explain the transition from activated transport to VRH. We show that in sufficiently small NCs, the fluctuations in donor number from one NC to another provide sufficient disorder to produce charging of some NCs, as electrons are driven to vacate higher shells of the quantum confinement energy spectrum. This confinement-driven charging produces a disordered Coulomb landscape throughout the array and leads to VRH at low temperature. We use a simple computer simulation to identify different regimes of conduction in the space of temperature, doping level, and NC diameter. We also discuss the implications of our results for large NCs with external impurity charges and for NCs that are gated electrochemically.

preprint2012arXiv

Why is the bulk resistivity of topological insulators so small?

As-grown topological insulators (TIs) are typically heavily-doped $n$-type crystals. Compensation by acceptors is used to move the Fermi level to the middle of the band gap, but even then TIs have a frustratingly small bulk resistivity. We show that this small resistivity is the result of band bending by poorly screened fluctuations in the random Coulomb potential. Using numerical simulations of a completely compensated TI, we find that the bulk resistivity has an activation energy of just 0.15 times the band gap, in good agreement with experimental data. At lower temperatures activated transport crosses over to variable range hopping with a relatively large localization length.

preprint2011arXiv

Cooperative Charging in a Nanocrystal Assembly Gated By Ionic Liquid

In order to make a densely packed assembly of undoped semiconductor nanocrystals conductive, it is usually gated by a room temperature ionic liquid. The ionic liquid enters the pores of the super-crystal assembly under the influence of an applied voltage. We study the capacitance of such a device as a function of the gate voltage. We show that, counter-intuitively, the capacitance of the system is the sum of delta-functions located at a sequence of critical gate voltages. At each critical voltage every nanocrystal acquires one additional electron.

preprint2011arXiv

Theory of volumetric capacitance of an electric double-layer supercapacitor

Electric double layer supercapacitors are a fast-rising class of high-power energy storage devices based on porous electrodes immersed in a concentrated electrolyte or ionic liquid. As of yet there is no microscopic theory to describe their surprisingly large capacitance per unit volume (volumetric capacitance) of ~ 100 F/cm^3, nor is there a good understanding of the fundamental limits on volumetric capacitance. In this paper we present a non-mean-field theory of the volumetric capacitance of a supercapacitor that captures the discrete nature of the ions and the exponential screening of their repulsive interaction by the electrode. We consider analytically and via Monte-Carlo simulations the case of an electrode made from a good metal and show that in this case the volumetric capacitance can reach the record values. We also study how the capacitance is reduced when the electrode is an imperfect metal characterized by some finite screening radius. Finally, we argue that a carbon electrode, despite its relatively large linear screening radius, can be approximated as a perfect metal because of its strong nonlinear screening. In this way the experimentally-measured capacitance values of ~ 100 F/cm^3 may be understood.