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Han Fu

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Published work

12 published item(s)

preprint2026arXiv

Delta-Adapter: Scalable Exemplar-Based Image Editing with Single-Pair Supervision

Exemplar-based image editing applies a transformation defined by a source-target image pair to a new query image. Existing methods rely on a pair-of-pairs supervision paradigm, requiring two image pairs sharing the same edit semantics to learn the target transformation. This constraint makes training data difficult to curate at scale and limits generalization across diverse edit types. We propose Delta-Adapter, a method that learns transferable editing semantics under single-pair supervision, requiring no textual guidance. Rather than directly exposing the exemplar pair to the model, we leverage a pre-trained vision encoder to extract a semantic delta that encodes the visual transformation between the two images. This semantic delta is injected into a pre-trained image editing model via a Perceiver-based adapter. Since the target image is never directly visible to the model, it can serve as the prediction target, enabling single-pair supervision without requiring additional exemplar pairs. This formulation allows us to leverage existing large-scale editing datasets for training. To further promote faithful transformation transfer, we introduce a semantic delta consistency loss that aligns the semantic change of the generated output with the ground-truth semantic delta extracted from the exemplar pair. Extensive experiments demonstrate that Delta-Adapter consistently improves both editing accuracy and content consistency over four strong baselines on seen editing tasks, while also generalizing more effectively to unseen editing tasks. Code will be available at https://delta-adapter.github.io.

preprint2022arXiv

Dynamical preparation of an atomic condensate in a Hofstadter band

The creation of a Hamiltonian in the quantum regime which has non-trivial topological features is a central goal of the cold-atom community, enabling widespread exploration of novel phases of quantum matter. A general scheme to synthesize such Hamiltonians is based on dynamical modulation of optical lattices which thereby generate vector potentials. At the same time the modulation can lead to heating and serious difficulties with equilibration. Here we show that these challenges can be overcome by demonstrating how a Hofstadter Bose-Einstein condensate (BEC) can be dynamically realized, using experimental protocols. From Gross-Pitaevskii simulations our study reveals a complex, multistage evolution; this includes a chaotic intermediate "heating" stage followed by a spontaneous reentrance to the BEC. The observed behavior is reminiscent of evolution in cosmological models.

preprint2022arXiv

Parmsurv: a SAS Macro for Flexible Parametric Survival Analysis with Long-Term Predictions

Health economic evaluations often require predictions of survival rates beyond the follow-up period. Parametric survival models can be more convenient for economic modelling than the Cox model. The generalized gamma (GG) and generalized F (GF) distributions are extensive families that contain almost all commonly used distributions with various hazard shapes and arbitrary complexity. In this study, we present a new SAS macro for implementing a wide variety of flexible parametric models including the GG and GF distributions and their special cases, as well as the Gompertz distribution. Proper custom distributions are also supported. Different from existing SAS procedures, this macro not only supports regression on the location parameter but also on ancillary parameters, which greatly increases model flexibility. In addition, the SAS macro supports weighted regression, stratified regression and robust inference. This study demonstrates with several examples how the SAS macro can be used for flexible survival modeling and extrapolation.

preprint2020arXiv

A Machine Learning Framework for Data Ingestion in Document Images

Paper documents are widely used as an irreplaceable channel of information in many fields, especially in financial industry, fostering a great amount of demand for systems which can convert document images into structured data representations. In this paper, we present a machine learning framework for data ingestion in document images, which processes the images uploaded by users and return fine-grained data in JSON format. Details of model architectures, design strategies, distinctions with existing solutions and lessons learned during development are elaborated. We conduct abundant experiments on both synthetic and real-world data in State Street. The experimental results indicate the effectiveness and efficiency of our methods.

preprint2020arXiv

MCEN: Bridging Cross-Modal Gap between Cooking Recipes and Dish Images with Latent Variable Model

Nowadays, driven by the increasing concern on diet and health, food computing has attracted enormous attention from both industry and research community. One of the most popular research topics in this domain is Food Retrieval, due to its profound influence on health-oriented applications. In this paper, we focus on the task of cross-modal retrieval between food images and cooking recipes. We present Modality-Consistent Embedding Network (MCEN) that learns modality-invariant representations by projecting images and texts to the same embedding space. To capture the latent alignments between modalities, we incorporate stochastic latent variables to explicitly exploit the interactions between textual and visual features. Importantly, our method learns the cross-modal alignments during training but computes embeddings of different modalities independently at inference time for the sake of efficiency. Extensive experimental results clearly demonstrate that the proposed MCEN outperforms all existing approaches on the benchmark Recipe1M dataset and requires less computational cost.

preprint2016arXiv

Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$

We study the low temperature conductivity of the electron accumulation layer induced by the very strong electric field at the surface of $\text{SrTiO}_3$ sample. Due to the strongly nonlinear lattice dielectric response, the three-dimensional density of electrons $n(x)$ in such a layer decays with the distance from the surface $x$ very slowly as $n(x) \propto 1/x^{12/7}$. We show that when the mobility is limited by the surface scattering the contribution of such a tail to the conductivity diverges at large $x$ because of growing time electrons need to reach the surface. We explore truncation of this divergence by the finite sample width, by the bulk scattering rate, or by the crossover to the bulk linear dielectric response with the dielectric constant $κ$. As a result we arrive at the anomalously large mobility, which depends not only on the rate of the surface scattering, but also on the physics of truncation. Similar anomalous behavior is found for the Hall factor, the magnetoresistance, and the thermopower.

preprint2016arXiv

Metal-insulator transition in films of doped semiconductor nanocrystals

To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$ for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted $n_c$, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.

preprint2016arXiv

Surface roughness scattering in multisubband accumulation layers

Accumulation layers with very large concentrations of electrons where many subbands are filled became recently available due to ionic liquid and other new methods of gating. The low temperature mobility in such layers is limited by the surface roughness scattering. However theories of roughness scattering so far dealt only with the small-density single subband two-dimensional electron gas (2DEG). Here we develop a theory of roughness-scattering limited mobility for the multisubband large concentration case. We show that with growing 2D electron concentration $n$ the surface dimensionless conductivity $σ/(2e^2/h)$ first decreases as $\propto n^{-6/5}$ and then saturates as $\sim(da_B/Δ^2)\gg 1$, where $d$ and $Δ$ are the characteristic length and height of the surface roughness, $a_B$ is the effective Bohr radius. This means that in spite of the shrinkage of the 2DEG width and the related increase of the scattering rate, the 2DEG remains a good metal. Thus, there is no re-entrant metal-insulator transition at high concentrations conjectured by Das Sarma and Hwang [PRB 89, 121413 (2014)].

preprint2015arXiv

Collapse of electrons to a donor cluster in SrTiO$_3$

It is known that a nucleus with charge $Ze$ where $Z>170$ creates electron-positron pairs from the vacuum. These electrons collapse onto the nucleus resulting in a net charge $Z_n<Z$ while the positrons are emitted. This effect is due to the relativistic dispersion law. The same reason leads to the collapse of electrons to the charged impurity with a large charge number $Z$ in narrow-band gap semiconductors and Weyl semimetals as well as graphene. In this paper, a similar effect of electron collapse and charge renormalization is found for donor clusters in SrTiO$_3$ (STO), but with a very different origin. At low temperatures, STO has an enormously large dielectric constant. Because of this, the nonlinear dielectric response becomes dominant when the electric field is not too small. We show that this leads to the collapse of surrounding electrons into a charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds a critical value $Z_c\simeq R/a$ where $a$ is the lattice constant. Using the Thomas-Fermi approach, we find that the net charge $Z_ne$ grows with $Z$ until $Z$ exceeds another value $Z^*\simeq(R/a)^{9/7}$. After this point, $Z_n$ remains $\sim Z^*$. We extend our results to the case of long cylindrical clusters. Our predictions can be tested by creating discs and stripes of charge on the STO surface.

preprint2015arXiv

Correlation effects in the capacitance of a gated carbon nanotube

For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that when the average spacing $n^{-1}$ between electrons within the low density 1-dimensional electron gas (1DEG) in the CNT is larger than the physical separation $d$ between the CNT and the gate, the enhancement of capacitance is expected to be big. A recent Coulomb blockade experiment[1], however, has observed no obvious increase of capacitance even at very low electron density. We show that this smaller capacitance can be understood as the result of the confining potential produced by the potential difference between the source/drain electrodes and the gate, which compresses the 1DEG when the electron number decreases. We suggest that by profiling the potential with the help of multiple split gates, one can return to the case of a uniform 1DEG with anomalously large capacitance.

preprint2015arXiv

Electron gas induced in SrTiO$_3$

This mini-review is dedicated to the 85th birthday of Prof. L. V. Keldysh, from whom we have learned so much. In this paper we study the potential and electron density depth profiles in surface accumulation layers in crystals with a large and nonlinear dielectric response such as SrTiO$_3$ (STO) in the cases of planar, spherical and cylindrical geometries. The electron gas can be created by applying an induction $D_0$ to the STO surface. We describe the lattice dielectric response of STO using the Landau-Ginzburg free energy expansion and employ the Thomas-Fermi (TF) approximation for the electron gas. For the planar geometry we arrive at the electron density profile $n(x) \propto (x+d)^{-12/7}$, where $d \propto D_0^{-7/5} $. We extend our results to overlapping electron gases in GTO/STO/GTO multi-heterojunctions and electron gases created by spill-out from NSTO (heavily $n$-type doped STO) layers into STO. Generalization of our approach to a spherical donor cluster creating a big TF atom with electrons in STO brings us to the problem of supercharged nuclei. It is known that for an atom with nuclear charge $Ze$, where $Z > 170$, electrons collapse onto the nucleus resulting in a net charge $Z_n < Z$. Here, instead of relativistic physics, the collapse is caused by the nonlinear dielectric response. Electrons collapse into the charged spherical donor cluster with radius $R$ when its total charge number $Z$ exceeds the critical value $Z_c \simeq R/a$, where $a$ is the lattice constant. The net charge $eZ_n$ grows with $Z$ until $Z$ exceeds $Z^* \simeq (R/a)^{9/7}$. After this point, the charge number of the compact core $Z_n$ remains $\simeq Z^*$, with the rest $Z^*$ electrons forming a sparse Thomas-Fermi electron atmosphere around it. We extend our results to the case of long cylindrical clusters as well.

preprint2015arXiv

Hopping conductivity and insulator-metal transition in films of touching semiconductor nanocrystals

This paper is focused on the the variable-range hopping of electrons in semiconductor nanocrystal (NC) films below the critical doping concentration $n_c$ at which it becomes metallic. The hopping conductivity is described by the Efros-Shklovskii law which depends on the localization length of electrons. We study how the localization length grows with the doping concentration $n$ in the film of touching NCs. For that we calculate the electron transfer matrix element $t(n)$ between neighboring NCs for two models when NCs touch by small facets or just one point. We study two sources of disorder: variations of NC diameters and random Coulomb potentials originating from random numbers of donors in NCs. We use the ratio of $t(n)$ to the disorder-induced NC level dispersion to find the localization length of electrons due to the multi-step elastic co-tunneling process. We found three different phases at $n<n_c$ depending on the strength of disorder, the material, sizes of NCs and their facets: 1) "insulator" where the localization length of electrons increases monotonically with $n$ and 2) "oscillating insulator" when the localization length (and the conductivity) oscillates with $n$ from the insulator base and 3) "blinking metal" where the localization length periodically diverges. The first two phases were seen experimentally and we discuss how one can see the more exotic third one. In all three the localization length diverges at $n=n_c$. This allows us to find $n_c$.