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Source author record

Yusuke Nishioka

Yusuke Nishioka appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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astro-ph.IMphysics.ins-detastro-ph.HE

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Published work

12 published item(s)

preprint2020arXiv

Development of the detector simulation framework for the Wideband Hybrid X-ray Imager onboard FORCE

FORCE is a Japan-US space-based astronomy mission for an X-ray imaging spectroscopy in an energy range of 1--80 keV. The Wideband Hybrid X-ray Imager (WHXI), which is the main focal plane detector, will use a hybrid semiconductor imager stack composed of silicon and cadmium telluride (CdTe). The silicon imager will be a certain type of the silicon-on-insulator (SOI) pixel sensor, named the X-ray pixel (XRPIX) series. Since the sensor has a small pixel size (30--36 $μ$m) and a thick sensitive region (300--500 $μ$m), understanding the detector response is not trivial and is important in order to optimize the camera design and to evaluate the scientific capabilities. We have developed a framework to simulate observations of celestial sources with semiconductor sensors. Our simulation framework was tested and validated by comparing our simulation results to laboratory measurements using the XRPIX 6H sensor. The simulator well reproduced the measurement results with reasonable physical parameters of the sensor including an electric field structure, a Coulomb repulsion effect on the carrier diffusion, and arrangement of the degraded regions. This framework is also applicable to future XRPIX updates including the one which will be part of the WHXI, as well as various types of semiconductor sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Optical Blocking Performance of CCDs Developed for the X-ray Astronomy Satellite XRISM

We have been developing P-channel Charge-Coupled Devices (CCDs) for the upcoming X-ray Astronomy Satellite XRISM, planned to be launched in 2021. While the basic design of the CCD camera (Soft X-ray Imager: SXI) is almost the same as that of the lost Hitomi (ASTRO-H) observatory, we are planning to reduce the "light leakages" that is one of the largest problems recognized in Hitomi data. We adopted a double-layer optical blocking layer on the XRISM CCDs and also added an extra aluminum layer on the backside of them. We develop a newly designed test sample CCD and irradiate it with optical light to evaluate the optical blocking performance. As a result, light leakages are effectively reduced compared with that of the Hitomi CCDs. We thus conclude that the issue is solved by the new design and that the XRISM CCDs satisfy the mission requirement for the SXI.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Improvement of Spectroscopic Performance using a Charge-sensitive Amplifier Circuit for an X-Ray Astronomical SOI Pixel Detector

We have been developing monolithic active pixel sensors series, named "XRPIX," based on the silicon-on-insulator (SOI) pixel technology, for future X-ray astronomical satellites. The XRPIX series offers high coincidence time resolution ({\rm \sim}1 {\rm μ}s), superior readout time ({\rm \sim}10 {\rm μ}s), and a wide energy range (0.5--40 keV). In the previous study, we successfully demonstrated X-ray detection by event-driven readout of XRPIX2b. We here report recent improvements in spectroscopic performance. We successfully increased the gain and reduced the readout noise in XRPIX2b by decreasing the parasitic capacitance of the sense-node originated in the buried p-well (BPW). On the other hand, we found significant tail structures in the spectral response due to the loss of the charge collection efficiency when a small BPW is employed. Thus, we increased the gain in XRPIX3b by introducing in-pixel charge sensitive amplifiers instead of having even smaller BPW. We finally achieved the readout noise of 35 e{\rm ^{-}} (rms) and the energy resolution of 320 eV (FWHM) at 6 keV without significant loss of the charge collection efficiency.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

X-ray Performance of Back-Side Illuminated Type of Kyoto's X-ray Astronomical SOI Pixel Sensor, XRPIX

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 μm in the front side of the sensor, it is impossible to detect low energy X-rays with a front-illuminated type. So, we have been developing back-illuminated type of XRPIX with a less 1 μm dead layer in the back-side, which enables the sensitivity to reach 0.5 keV. We produced two types of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizza process" which LBNL developed and the other is processed in the ion implantation and laser annealing. We irradiated both of the BI-XRPIXs with soft X-ray and investigate soft X-ray performance of them. We report results from soft X-ray evaluation test of the device.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Improving Charge-Collection Efficiency of Kyoto's SOI Pixel Sensors

We have been developing X-ray SOIPIXs for next-generation satellites for X-ray astronomy. Their high time resolution ($\sim10~μ$s) and event-trigger-output function enable us to read out without pile-ups and to use anti-coincidence systems. Their performance in imaging spectroscopy is comparable to that in the CCDs. A problem in our previous model was degradation of charge-collection efficiency (CCE) at pixel borders. We measured the response in the sub-pixel scale, using finely collimated X-ray beams at $10~μ$mΦ$ at SPring-8, and investigated the non-uniformity of the CCE within a pixel. We found that the X-ray detection efficiency and CCE degrade in the sensor region under the pixel circuitry placed outside the buried p-wells (BPW). A 2D simulation of the electric fields shows that the isolated pixel-circuitry outside the BPW creates local minimums in the electric potentials at the interface between the sensor and buried oxide layers. Thus, a part of signal charge is trapped there and is not collected to the BPW. Based on this result, we modified the placement of the in-pixel circuitry so that the electric fields would converge toward the BPW. We confirmed that the CCE at pixel borders is successfully improved with the updated model.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks

We have been developing X-ray SOIPIXs, "XRPIX", for future X-ray astronomy satellites. XRPIX is equipped with a function of "event-driven readout", which allows us to readout signal hit pixels only and realizes a high time resolution ($\sim10μ{\rm s}$). The current version of XRPIX suffers a problem that the readout noise in the event-driven readout mode is higher than that in the the frame readout mode, in which all the pixels are read out serially. Previous studies have clarified that the problem is caused by the cross-talks between buried P-wells (BPW) in the sensor layer and in-pixel circuits in the circuit layer. Thus, we developed new XRPIX having a Double SOI wafer (DSOI), which has an additional silicon layer (middle silicon) working as an electrical shield between the BPW and the in-pixel circuits. After adjusting the voltage applied to the middle silicon, we confirmed the reduction of the cross-talk by observing the analog waveform of the pixel circuit. We also successfully detected $^{241}$Am X-rays with XRPIX.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Study of the basic performance of the XRPIX for the future astronomical X-ray satellite

We have developed CMOS imaging sensor (XRPIX) using SOI (Silicon-On-Insulator) technology for the X-ray astronomical use. XRPIX(X-Ray soiPIXel) has advantage of a high time resolution, a high position resolution and an observation in a wide X-ray energy band with a thick depletion layer of over 200um. However, the energy resolution of XRPIX is not as good as one of X-ray CCD. Therefore improvement of the the energy resolution is one of the most important development item of XRPIX. In order to evaluate the performance XRPIX more precisely, we have investigated on the temperature dependence of the basic performance, such as readout noise, leak current, gain and energy resolution, using two type of XRPIX, XRPIX1 and XRPIX2b_CZ. In our study, we confirmed the readout noise, the leak current noise and the energy resolution clearly depended on the operating temperature of XRPIX. In addition, we divided the readout noise into the leak current noise and the circuit origin noise. As a result, we found that noise of the electronic circuitry origin was proportional to the square root of operating temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Development and Performance of Kyoto's X-ray Astronomical SOI pixel (SOIPIX) sensor

We have been developing monolithic active pixel sensors, known as Kyoto's X-ray SOIPIXs, based on the CMOS SOI (silicon-on-insulator) technology for next-generation X-ray astronomy satellites. The event trigger output function implemented in each pixel offers microsecond time resolution and enables reduction of the non-X-ray background that dominates the high X-ray energy band above 5--10 keV. A fully depleted SOI with a thick depletion layer and back illumination offers wide band coverage of 0.3--40 keV. Here, we report recent progress in the X-ray SOIPIX development. In this study, we achieved an energy resolution of 300~eV (FWHM) at 6~keV and a read-out noise of 33~e- (rms) in the frame readout mode, which allows us to clearly resolve Mn-K$α$ and K$β$. Moreover, we produced a fully depleted layer with a thickness of $500~{\rm μm}$. The event-driven readout mode has already been successfully demonstrated.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

The ASTRO-H X-ray Astronomy Satellite

The joint JAXA/NASA ASTRO-H mission is the sixth in a series of highly successful X-ray missions developed by the Institute of Space and Astronautical Science (ISAS), with a planned launch in 2015. The ASTRO-H mission is equipped with a suite of sensitive instruments with the highest energy resolution ever achieved at E > 3 keV and a wide energy range spanning four decades in energy from soft X-rays to gamma-rays. The simultaneous broad band pass, coupled with the high spectral resolution of Delta E < 7 eV of the micro-calorimeter, will enable a wide variety of important science themes to be pursued. ASTRO-H is expected to provide breakthrough results in scientific areas as diverse as the large-scale structure of the Universe and its evolution, the behavior of matter in the gravitational strong field regime, the physical conditions in sites of cosmic-ray acceleration, and the distribution of dark matter in galaxy clusters at different redshifts.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Proton Radiation Damage Experiment on P-Channel CCD for an X-ray CCD camera onboard the Astro-H satellite

We report on a proton radiation damage experiment on P-channel CCD newly developed for an X-ray CCD camera onboard the Astro-H satellite. The device was exposed up to 10^9 protons cm^{-2} at 6.7 MeV. The charge transfer inefficiency (CTI) was measured as a function of radiation dose. In comparison with the CTI currently measured in the CCD camera onboard the Suzaku satellite for 6 years, we confirmed that the new type of P-channel CCD is radiation tolerant enough for space use. We also confirmed that a charge-injection technique and lowering the operating temperature efficiently work to reduce the CTI for our device. A comparison with other P-channel CCD experiments is also discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The ASTRO-H X-ray Observatory

The joint JAXA/NASA ASTRO-H mission is the sixth in a series of highly successful X-ray missions initiated by the Institute of Space and Astronautical Science (ISAS). ASTRO-H will investigate the physics of the high-energy universe via a suite of four instruments, covering a very wide energy range, from 0.3 keV to 600 keV. These instruments include a high-resolution, high-throughput spectrometer sensitive over 0.3-2 keV with high spectral resolution of Delta E < 7 eV, enabled by a micro-calorimeter array located in the focal plane of thin-foil X-ray optics; hard X-ray imaging spectrometers covering 5-80 keV, located in the focal plane of multilayer-coated, focusing hard X-ray mirrors; a wide-field imaging spectrometer sensitive over 0.4-12 keV, with an X-ray CCD camera in the focal plane of a soft X-ray telescope; and a non-focusing Compton-camera type soft gamma-ray detector, sensitive in the 40-600 keV band. The simultaneous broad bandpass, coupled with high spectral resolution, will enable the pursuit of a wide variety of important science themes.

0 citations0 reviewsNo code linkedOpen access