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Aveek Bid

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Published work

17 published item(s)

preprint2025arXiv

Odd-parity longitudinal magnetoconductivity in time-reversal symmetry broken materials

Magnetotransport measurements are a sensitive probe of symmetry and electronic structure in quantum materials. While conventional metals exhibit longitudinal magnetoconductivity that is even in a magnetic field ($B$) for small $B$, we show that magnetic materials which intrinsically break time-reversal symmetry (TRS) show an {\it odd-parity magnetoconductivity} (OMC), with a leading linear-$B$ response. Using semiclassical transport theory, we derive explicit expressions for the longitudinal and transverse conductivities and identify their origin in Berry curvature and orbital magnetic moment. Crystalline symmetry analysis shows that longitudinal OMC follows the same point-group constraints as the anomalous Hall effect, while transverse OMC obeys distinct rules, providing an independent probe of TRS breaking. In the large $B$ quantum oscillation regime, we uncover both odd- and even-$B$ contributions, demonstrating OMC beyond the semiclassical picture. Explicit calculations in valley-polarized gapped graphene show that OMC peaks near the band edges, vanish in the band gap and follow the temperature dependence of the magnetic order parameter. Our results explain the odd-parity magnetoresistance recently observed in magnetized graphene and establish OMC as a robust transport signature of intrinsic TRS breaking in metals.

preprint2023arXiv

Correlated carrier dynamics in a superconducting van der Waals heterostructure

The study of Berezinskii-Kosterlitz-Thouless transitions in clean, layered two-dimensional superconductors promises to provide insight into a host of novel phenomena like re-entrant vortex-dynamics, underlying unconventional metallic phases, and topological superconductivity. In this letter, we report the study of charge carrier dynamics in a novel 2-dimensional superconducting van der Waals heterostructure comprising monolayer MoS2 and few-layer NbSe2 (15 nm). Using low-frequency conductance fluctuation spectroscopy, we show that the superconducting transition in the system is percolative. We present a phenomenological picture of different phases across the transition correlating with the evaluated noise. The analysis of the higher-order statistics of fluctuation reveals non-Gaussian components around the transition indicative of long-range correlation in the system.

preprint2020arXiv

Anharmonicity in Raman-active phonon modes in atomically thin MoS$_2$

Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer and natural bilayer MoS$_2$ over a broad range of temperatures ($8 < $T$ < 300$ K). Both the Raman shift and FWHM of these modes show linear temperature dependence for $T>100$ K, whereas they become independent of temperature for $T<100$ K. Using first-principles calculations, we show that three-phonon anharmonic effects intrinsic to the material can account for the observed temperature-dependence of the line-width of both the modes. It also plays an important role in determining the temperature-dependence of the frequency of the Raman modes. The observed evolution of the line-width of the A$_{1g}$ mode suggests that electron-phonon processes are additionally involved. From the analysis of the temperature-dependent Raman spectra of MoS$_2$ on two different substrates -- SiO$_2$ and hexagonal boron nitride, we disentangle the contributions of external stress and internal impurities to these phonon-related processes. We find that the renormalization of the phonon mode frequencies on different substrates is governed by strain and intrinsic doping. Our work establishes the role of intrinsic phonon anharmonic effects in deciding the Raman shift in MoS$_2$ irrespective of substrate and layer number.

preprint2020arXiv

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

preprint2020arXiv

Effect of dimensionality on the vortex-dynamics in type-II superconductor

We explore the effects of sample dimensionality on vortex pinning in a type-II, low-$T_C$, s-wave superconductor, NbN, in the presence of a perpendicular magnetic field, $H$. We find significant differences in the phase diagrams in the magnetic field--temperature plane between 3-dimensional (3D) and 2-dimensional (2D) NbN films. The differences are most striking close to the normal-superconductor phase transition. We establish that these variances have their origin in the differing pinning properties in two different dimensions. We obtain the pinning strength quantitatively in both the dimensions from two independent transport measurements performed in two different regimes of vortex-motion -- (i) thermally assisted flux-flow (TAFF) regime and (ii) flux flow (FF) regime. Both the measurements consistently show that both the pinning potential and the zero-field free-energy barrier to depinning in the 3D superconductor are at least an order of magnitude stronger than that in the 2D superconductor. Further, we probed the dynamics of pinning in both 2D and 3D superconductor through voltage fluctuation spectroscopy. We find that the mechanism of vortex pinning-depinning is qualitatively similar for the 3D and 2D superconductors. The voltage-fluctuations arising from vortex-motion are found to be correlated only in the 2D superconductor. We establish this to be due to the presence of long-range phase fluctuations near the Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transition in 2-dimensional superconductors.

preprint2020arXiv

Effect of microstructure on the electronic transport properties of epitaxial CaRuO$_3$ thin films

We have carried out extensive comparative studies of the structural and transport properties of CaRuO$_3$ thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly affected by the oxygen partial pressure during growth. This in turn affects the electrical and magnetic properties of the films. Films grown under high oxygen pressure have the least surface roughness and show transport characteristics of a good metal down to the lowest temperature measured. On the other hand, films grown under low oxygen pressures have high degree of surface roughness and show signatures of ferromagnetism. We could verify that the low frequency resistance fluctuations (noise) in these films arise due to thermally activated fluctuations of local defects and that the defect density matches with the level of disorder seen in the films through structural characterizations.

preprint2020arXiv

Observation of Time-Reversal Invariant Helical Edge-Modes in Bilayer Graphene/WSe$_2$ Heterostructure

Topological insulators, along with Chern insulators and Quantum Hall insulator phases, are considered as paradigms for symmetry protected topological phases of matter. This article reports the experimental realization of the time-reversal invariant helical edge-modes in bilayer graphene/monolayer WSe$_2$-based heterostructures -- a phase generally considered as a precursor to the field of generic topological insulators. Our observation of this elusive phase depended crucially on our ability to create mesoscopic devices comprising both a moiré superlattice potential and strong spin-orbit coupling; this resulted in materials whose electronic band structure could be tuned from trivial to topological by an external displacement field. We find that the topological phase is characterized by a bulk bandgap and by helical edge-modes with electrical conductance quantized exactly to $2e^2/h$ in zero external magnetic field. We put the helical edge-modes on firm grounds through supporting experiments, including the verification of predictions of the Landauer-B$\mathrm{\ddot{u}}$ttiker model for quantum transport in multi-terminal mesoscopic devices. Our non-local transport properties measurements show that the helical edge-modes are dissipationless and equilibrate at the contact probes. We achieved the tunability of the different topological phases with electric and magnetic fields, which allowed us to achieve topological phase transitions between trivial and multiple, distinct topological phases. We also present results of a theoretical study of a realistic model which, in addition to replicating our experimental results, explains the origin of the topological insulating bulk and helical edge-modes. Our experimental and theoretical results establish a viable route to realizing the time-reversal invariant $\mathbb{Z}_2$ topological phase of matter.

preprint2020arXiv

Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions

In this article, we present evidence for the existence of vortex-solid/glass (VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN. We probed the VG to VF transition in both 2D and 3D films of NbN through studies of magnetoresistance and current-voltage characteristics. The dynamical exponents corresponding to this phase transition were extracted independently from the two sets of measurements. The $H$-$T$ phase diagram for the 2D and 3D SC are found to be significantly different near the critical point. In the case of 3D SC, the exponent values obtained from the two independent measurements show excellent match. On the other hand, for the 2D SC, the exponents obtained from the two experiments were significantly different. We attribute this to the fact that the characteristic length scale diverges near the critical point in a 2D SC in a distinctly different way from its 3D counterpart form scaling behaviour.

preprint2016arXiv

Correlated Non-Gaussian phase fluctuations in LaAlO$_3$/SrTiO$_3$ heterointerface

We probe the existence of large correlated non-Gaussian phase fluctuations in the vicinity of the superconducting phase transition in the conducting layer residing at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures. The non-Gaussian fluctuations appear between the Berezinskii-Kosterlitz-Thouless transition temperature $T_{BKT}$ and the mean field transition temperature $T_C$. Subsequent theoretical analysis reveals that non-Gaussianity arises predominantly due to the percolative transition of a Josephson coupled network of superconductors. Our results confirm that the superconductivity in this system is confined to two-dimensions. Our study of the non-Gaussian resistance fluctuation spectrum provides a novel means to explore the BKT-transition in two-dimensional inhomogeneous superconductors.

preprint2015arXiv

Effect of ambient on the resistance fluctuations of graphene

In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity and fast response times.

preprint2015arXiv

High performance sensors based on resistance fluctuations of single layer graphene transistors

One of the most interesting predicted applications of graphene monolayer based devices is as high quality sensors. In this letter we show, through systematic experiments, a chemical vapor sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field-effect-transistor (SLG-FET) devices. The sensor has extremely high sensitivity, very high specificity, high fidelity and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than two orders of magnitude better than a detection scheme where changes in the average value of the resistance is monitored. We propose a number-density fluctuation based model to explain the superior characteristics of noise measurement based detection scheme presented in this article.

preprint2015arXiv

Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field

SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of SmB$_6$. We observe a large non-local surface signal at temperatures lower than the bulk Kondo gap scale. Measurements and finite element simulations allow us to distinguish unambiguously between the contributions from different transport channels. In contrast to general expectations, the electrical transport properties of the surface channels was found to be insensitive to high magnetic fields. Local and non-local magnetoresistance measurements allowed us to identify definite signatures of helical spin states and strong inter-band scattering at the surface.

preprint2015arXiv

Role of different scattering mechanisms on the temperature dependence of transport in graphene

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

preprint2014arXiv

Probing a spin-glass state in SrRuO3 thin films through higher-order statistics of resistance fluctuations

The complex perovskite oxide SrRuO3 shows intriguing transport properties at low temperatures due to the interplay of spin, charge, and orbital degrees of freedom. One of the open questions in this system is regarding the origin and nature of the low-temperature glassy state. In this paper we report on measurements of higher-order statistics of resistance fluctuations performed in epitaxial thin films of SrRuO3 to probe this issue. We observe large low-frequency non-Gaussian resistance fluctuations over a certain temperature range. Our observations are compatible with that of a spin-glass system with properties described by hierarchical dynamics rather than with that of a simple ferromagnet with a large coercivity.

preprint2013arXiv

Probing long-range correlations in the Berezinskii-Kosterlitz-Thouless fluctuation regime of ultra-thin NbN superconducting films using transport noise measurements

We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depend strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.

preprint2010arXiv

Observation of neutral modes in the fractional quantum Hall regime

In the quantum Hall effect regime, taking place in a two-dimensional-electron gas under strong magnetic field, currents flow along the edges of the sample. For some particle-hole conjugate states of the fractional regime, e.g., with filling between 1/2 and 1 of the lowest Landau level; early predictions suggested the presence of counter-propagating edge currents in addition to the expected ones. When this did not agree with the measured conductance, it was suggested that disorder and interactions will lead to counterpropagating modes that carry only energy - the so called neutral modes. In addition, a neutral upstream mode (Majorana mode) was also expected for selected wavefunctions proposed for the even denominator filling 5/2. Here we report on the direct observation of counter-propagating neutral modes in fillings 2/3, 3/5 and 5/2. This was done by injecting such modes and allowing them to impinge on a narrow constriction, which partly reflected them, with two main observed effects: (a) A resultant shot noise proportional to the applied voltage on the injecting contact; (b) With simultaneously injecting also a charge mode, the presence of the neutral mode was found to significantly affect the Fano factor and the temperature of the backscattered charge mode. In particular, such observation for filling 5/2, may single out the non-abelian wavefunctions for the state.

preprint2009arXiv

The Role of Interactions in an Electronic Fabry-Perot Interferometer Operating in the Quantum Hall Effect Regime

Interference of edge channels is expected to be a prominent tool for studying statistics of charged quasiparticles in the quantum Hall effect (QHE) [A. Stern (2008), Ann. Phys. 1:204; C. Chamon et al. (1997), Phys. Rev. B, 55:2331]. We present here a detailed study of an electronic Fabry-Perot interferometer (FPI) operating in the QHE regime [C. Chamon et al. (1997), Phys. Rev. B, 55:2331], with the phase of the interfering quasiparticles controlled by the Aharonov-Bohm (AB) effect. Our main finding is that Coulomb interactions among the electrons dominate the interference, even in a relatively large area FPI, leading to a strong dependence of the area enclosed by the interference loop on the magnetic field. In particular, for a composite edge structure, with a few independent edge channels propagating along the edge, interference of the outmost edge channel (belonging to the lowest Landau level) was insensitive to magnetic field; suggesting a constant enclosed flux. However, when any of the inner edge channels interfered, the enclosed flux decreased when the magnetic field increased. By intentionally varying the enclosed area with a biased metallic gate and observing the periodicity of the interference pattern, charges e (for integer filling factors) and e/3 (for a fractional filling factor) were found to be expelled from the FPI. Moreover, these observations provided also a novel way of detecting the charge of the interfering quasiparticles.