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Aveek Bid

Aveek Bid contributes to research discovery and scholarly infrastructure.

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

8 published item(s)

preprint2025arXiv

Odd-parity longitudinal magnetoconductivity in time-reversal symmetry broken materials

Magnetotransport measurements are a sensitive probe of symmetry and electronic structure in quantum materials. While conventional metals exhibit longitudinal magnetoconductivity that is even in a magnetic field ($B$) for small $B$, we show that magnetic materials which intrinsically break time-reversal symmetry (TRS) show an {\it odd-parity magnetoconductivity} (OMC), with a leading linear-$B$ response. Using semiclassical transport theory, we derive explicit expressions for the longitudinal and transverse conductivities and identify their origin in Berry curvature and orbital magnetic moment. Crystalline symmetry analysis shows that longitudinal OMC follows the same point-group constraints as the anomalous Hall effect, while transverse OMC obeys distinct rules, providing an independent probe of TRS breaking. In the large $B$ quantum oscillation regime, we uncover both odd- and even-$B$ contributions, demonstrating OMC beyond the semiclassical picture. Explicit calculations in valley-polarized gapped graphene show that OMC peaks near the band edges, vanish in the band gap and follow the temperature dependence of the magnetic order parameter. Our results explain the odd-parity magnetoresistance recently observed in magnetized graphene and establish OMC as a robust transport signature of intrinsic TRS breaking in metals.

preprint2023arXiv

Correlated carrier dynamics in a superconducting van der Waals heterostructure

The study of Berezinskii-Kosterlitz-Thouless transitions in clean, layered two-dimensional superconductors promises to provide insight into a host of novel phenomena like re-entrant vortex-dynamics, underlying unconventional metallic phases, and topological superconductivity. In this letter, we report the study of charge carrier dynamics in a novel 2-dimensional superconducting van der Waals heterostructure comprising monolayer MoS2 and few-layer NbSe2 (15 nm). Using low-frequency conductance fluctuation spectroscopy, we show that the superconducting transition in the system is percolative. We present a phenomenological picture of different phases across the transition correlating with the evaluated noise. The analysis of the higher-order statistics of fluctuation reveals non-Gaussian components around the transition indicative of long-range correlation in the system.

preprint2020arXiv

Anharmonicity in Raman-active phonon modes in atomically thin MoS$_2$

Phonon-phonon anharmonic effects have a strong influence on the phonon spectrum; most prominent manifestation of these effects are the softening (shift in frequency) and broadening (change in FWHM) of the phonon modes at finite temperature. Using Raman spectroscopy, we studied the temperature dependence of the FWHM and Raman shift of $\mathrm{E_{2g}^1}$ and $\mathrm{A_{1g}}$ modes for single-layer and natural bilayer MoS$_2$ over a broad range of temperatures ($8 < $T$ < 300$ K). Both the Raman shift and FWHM of these modes show linear temperature dependence for $T>100$ K, whereas they become independent of temperature for $T<100$ K. Using first-principles calculations, we show that three-phonon anharmonic effects intrinsic to the material can account for the observed temperature-dependence of the line-width of both the modes. It also plays an important role in determining the temperature-dependence of the frequency of the Raman modes. The observed evolution of the line-width of the A$_{1g}$ mode suggests that electron-phonon processes are additionally involved. From the analysis of the temperature-dependent Raman spectra of MoS$_2$ on two different substrates -- SiO$_2$ and hexagonal boron nitride, we disentangle the contributions of external stress and internal impurities to these phonon-related processes. We find that the renormalization of the phonon mode frequencies on different substrates is governed by strain and intrinsic doping. Our work establishes the role of intrinsic phonon anharmonic effects in deciding the Raman shift in MoS$_2$ irrespective of substrate and layer number.

preprint2020arXiv

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

preprint2020arXiv

Effect of dimensionality on the vortex-dynamics in type-II superconductor

We explore the effects of sample dimensionality on vortex pinning in a type-II, low-$T_C$, s-wave superconductor, NbN, in the presence of a perpendicular magnetic field, $H$. We find significant differences in the phase diagrams in the magnetic field--temperature plane between 3-dimensional (3D) and 2-dimensional (2D) NbN films. The differences are most striking close to the normal-superconductor phase transition. We establish that these variances have their origin in the differing pinning properties in two different dimensions. We obtain the pinning strength quantitatively in both the dimensions from two independent transport measurements performed in two different regimes of vortex-motion -- (i) thermally assisted flux-flow (TAFF) regime and (ii) flux flow (FF) regime. Both the measurements consistently show that both the pinning potential and the zero-field free-energy barrier to depinning in the 3D superconductor are at least an order of magnitude stronger than that in the 2D superconductor. Further, we probed the dynamics of pinning in both 2D and 3D superconductor through voltage fluctuation spectroscopy. We find that the mechanism of vortex pinning-depinning is qualitatively similar for the 3D and 2D superconductors. The voltage-fluctuations arising from vortex-motion are found to be correlated only in the 2D superconductor. We establish this to be due to the presence of long-range phase fluctuations near the Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transition in 2-dimensional superconductors.

preprint2020arXiv

Effect of microstructure on the electronic transport properties of epitaxial CaRuO$_3$ thin films

We have carried out extensive comparative studies of the structural and transport properties of CaRuO$_3$ thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly affected by the oxygen partial pressure during growth. This in turn affects the electrical and magnetic properties of the films. Films grown under high oxygen pressure have the least surface roughness and show transport characteristics of a good metal down to the lowest temperature measured. On the other hand, films grown under low oxygen pressures have high degree of surface roughness and show signatures of ferromagnetism. We could verify that the low frequency resistance fluctuations (noise) in these films arise due to thermally activated fluctuations of local defects and that the defect density matches with the level of disorder seen in the films through structural characterizations.

preprint2020arXiv

Observation of Time-Reversal Invariant Helical Edge-Modes in Bilayer Graphene/WSe$_2$ Heterostructure

Topological insulators, along with Chern insulators and Quantum Hall insulator phases, are considered as paradigms for symmetry protected topological phases of matter. This article reports the experimental realization of the time-reversal invariant helical edge-modes in bilayer graphene/monolayer WSe$_2$-based heterostructures -- a phase generally considered as a precursor to the field of generic topological insulators. Our observation of this elusive phase depended crucially on our ability to create mesoscopic devices comprising both a moiré superlattice potential and strong spin-orbit coupling; this resulted in materials whose electronic band structure could be tuned from trivial to topological by an external displacement field. We find that the topological phase is characterized by a bulk bandgap and by helical edge-modes with electrical conductance quantized exactly to $2e^2/h$ in zero external magnetic field. We put the helical edge-modes on firm grounds through supporting experiments, including the verification of predictions of the Landauer-B$\mathrm{\ddot{u}}$ttiker model for quantum transport in multi-terminal mesoscopic devices. Our non-local transport properties measurements show that the helical edge-modes are dissipationless and equilibrate at the contact probes. We achieved the tunability of the different topological phases with electric and magnetic fields, which allowed us to achieve topological phase transitions between trivial and multiple, distinct topological phases. We also present results of a theoretical study of a realistic model which, in addition to replicating our experimental results, explains the origin of the topological insulating bulk and helical edge-modes. Our experimental and theoretical results establish a viable route to realizing the time-reversal invariant $\mathbb{Z}_2$ topological phase of matter.

preprint2020arXiv

Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions

In this article, we present evidence for the existence of vortex-solid/glass (VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN. We probed the VG to VF transition in both 2D and 3D films of NbN through studies of magnetoresistance and current-voltage characteristics. The dynamical exponents corresponding to this phase transition were extracted independently from the two sets of measurements. The $H$-$T$ phase diagram for the 2D and 3D SC are found to be significantly different near the critical point. In the case of 3D SC, the exponent values obtained from the two independent measurements show excellent match. On the other hand, for the 2D SC, the exponents obtained from the two experiments were significantly different. We attribute this to the fact that the characteristic length scale diverges near the critical point in a 2D SC in a distinctly different way from its 3D counterpart form scaling behaviour.