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Researcher profile

Kazi Rafsanjani Amin

Kazi Rafsanjani Amin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.supr-concond-mat.otherphysics.ins-detquant-ph

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Published work

7 published item(s)

preprint2021arXiv

A CMOS compatible platform for high impedance superconducting quantum circuits

Aluminium based platforms have allowed to reach major milestones for superconducting quantum circuits. For the next generation of devices, materials that are able to maintain low microwave losses while providing new functionalities, such as large kinetic inductance or compatibility with CMOS platform are sought for. Here we report on a combined direct current (DC) and microwave investigation of titanium nitride lms of dierent thicknesses grown using CMOS compatible methods. For microwave resonators made of TiN lm of thickness $\sim$3 nm, we measured large kinetic inductance LK $\sim$ 240 pH/sq, high mode impedance of $\sim$ 4.2 k$Ω$ while maintaining microwave quality factor $\sim$ 10^5 in the single photon limit. We present an in-depth study of the microwave loss mechanisms in these devices that indicates the importance of quasiparticles and provide insights for further improvement.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of dimensionality on the vortex-dynamics in type-II superconductor

We explore the effects of sample dimensionality on vortex pinning in a type-II, low-$T_C$, s-wave superconductor, NbN, in the presence of a perpendicular magnetic field, $H$. We find significant differences in the phase diagrams in the magnetic field--temperature plane between 3-dimensional (3D) and 2-dimensional (2D) NbN films. The differences are most striking close to the normal-superconductor phase transition. We establish that these variances have their origin in the differing pinning properties in two different dimensions. We obtain the pinning strength quantitatively in both the dimensions from two independent transport measurements performed in two different regimes of vortex-motion -- (i) thermally assisted flux-flow (TAFF) regime and (ii) flux flow (FF) regime. Both the measurements consistently show that both the pinning potential and the zero-field free-energy barrier to depinning in the 3D superconductor are at least an order of magnitude stronger than that in the 2D superconductor. Further, we probed the dynamics of pinning in both 2D and 3D superconductor through voltage fluctuation spectroscopy. We find that the mechanism of vortex pinning-depinning is qualitatively similar for the 3D and 2D superconductors. The voltage-fluctuations arising from vortex-motion are found to be correlated only in the 2D superconductor. We establish this to be due to the presence of long-range phase fluctuations near the Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transition in 2-dimensional superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effect of ambient on the resistance fluctuations of graphene

In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity and fast response times.

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preprint2015arXiv

High performance sensors based on resistance fluctuations of single layer graphene transistors

One of the most interesting predicted applications of graphene monolayer based devices is as high quality sensors. In this letter we show, through systematic experiments, a chemical vapor sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field-effect-transistor (SLG-FET) devices. The sensor has extremely high sensitivity, very high specificity, high fidelity and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than two orders of magnitude better than a detection scheme where changes in the average value of the resistance is monitored. We propose a number-density fluctuation based model to explain the superior characteristics of noise measurement based detection scheme presented in this article.

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preprint2015arXiv

Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field

SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of SmB$_6$. We observe a large non-local surface signal at temperatures lower than the bulk Kondo gap scale. Measurements and finite element simulations allow us to distinguish unambiguously between the contributions from different transport channels. In contrast to general expectations, the electrical transport properties of the surface channels was found to be insensitive to high magnetic fields. Local and non-local magnetoresistance measurements allowed us to identify definite signatures of helical spin states and strong inter-band scattering at the surface.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Role of different scattering mechanisms on the temperature dependence of transport in graphene

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Probing long-range correlations in the Berezinskii-Kosterlitz-Thouless fluctuation regime of ultra-thin NbN superconducting films using transport noise measurements

We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depend strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.

0 citations0 reviewsNo code linkedOpen access