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Researcher profile

Gopi Nath Daptary

Gopi Nath Daptary contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2026arXiv

Conductance Oscillations in a Topological Insulator-Disordered Superconductor Hybrid Interface

We report on the observation on proximity-induced superconductivity in the topological insulator BiSbTeSe2 coupled to a disordered superconductor, amorphous indium oxide (a-InO). Resistance temperature measurements reveal superconducting signatures at low temperatures, even when InO is in an insulating state, indicating the persistence of superconducting correlations. Differential conductance spectra reveal nearly periodic oscillations at higher bias, together with a pronounced zero-bias conductance peak. Both effect disappears at high temperature, marking the critical temperature (T*) of the superconducting islands in InO. These results underscore the influence of topological surface states on proximity-induced superconductivity and highlight the role of superconducting fluctuations in disordered superconductor/topological-insulator hybrid interfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Enhancement of Superconductivity upon reduction of carrier density in proximitized graphene

The superconducting transition temperature (Tc) of a single layer graphene coupled to an Indium oxide (InO) film, a low carrier-density superconductor, is found to increase with decreasing carrier density and is largest close to the average charge neutrality point in graphene. Such an effect is very surprising in conventional BCS superconductors. We study this phenomenon both experimentally and theoretically. Our analysis suggests that the InO film induces random electron and hole-doped puddles in the graphene. The Josephson effect across these regions of opposite polarity enhances the Josephson coupling between the superconducting clusters in InO, along with the overall Tc of the bilayer heterostructure. This enhancement is most effective when the chemical potential of the system is tuned between the charge neutrality points of the electron and hole-doped regions.

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preprint2020arXiv

Continuous transition from weakly localized regime to strong localization regime in Nd_{0.7}La_{0.3}NiO_{3} films

We report an investigation of Metal Insulator Transition (MIT) using conductivity and magnetoconductance (MC) measurements down to 0.3 K in Nd_{0.7}La_{0.3}NiO_{3} films grown on crystalline substrates of LaAlO_{3} (LAO), SrTiO_{3} (STO), and NdGaO_{3}(NGO) by pulsed laser deposition. The film grown on LAO experiences a compressive strain and shows metallic behavior with the onset of a weak resistivity upturn below 2 K which is linked to the onset of weak localization contribution. Films grown on STO and NGO show a crossover from a Positive Temperature Coefficient (PTC) resistance regime to Negative Temperature Coefficient (NTC) resistance regime at definite temperatures. We establish that a cross-over from PTC to NTC on cooling does not necessarily constitute a MIT because the extrapolated conductivity at zero temperature σ_{0} though small (<10 S/cm) is finite, signalling the existence of a bad metallic state and absence of an activated transport. The value of σ_{0} for films grown on NGO is reduced by a factor of 40 compared to that for films grown on STO. We show that a combination of certain physical factors makes substituted nickelate (that are known to exhibit first order Mott type transition), undergo a continuous transition as seen in systems undergoing disorder/composition driven Anderson transition. The MC measurement also support the above observation and show that at low temperature there exists a positive MC that arises from the quantum interference which co-exists with a spin-related negative MC that becomes progressively stronger as the electrons approach a strongly localized state in the film grown on NGO.

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preprint2020arXiv

Effect of microstructure on the electronic transport properties of epitaxial CaRuO$_3$ thin films

We have carried out extensive comparative studies of the structural and transport properties of CaRuO$_3$ thin films grown under various oxygen pressure. We find that the preferred orientation and surface roughness of the films are strongly affected by the oxygen partial pressure during growth. This in turn affects the electrical and magnetic properties of the films. Films grown under high oxygen pressure have the least surface roughness and show transport characteristics of a good metal down to the lowest temperature measured. On the other hand, films grown under low oxygen pressures have high degree of surface roughness and show signatures of ferromagnetism. We could verify that the low frequency resistance fluctuations (noise) in these films arise due to thermally activated fluctuations of local defects and that the defect density matches with the level of disorder seen in the films through structural characterizations.

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