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Atsutaka Maeda

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Published work

20 published item(s)

preprint2021arXiv

Deep Learning Model for Finding New Superconductors

Exploration of new superconductors still relies on the experience and intuition of experts and is largely a process of experimental trial and error. In one study, only 3% of the candidate materials showed superconductivity. Here, we report the first deep learning model for finding new superconductors. We introduced the method named "reading periodic table" which represented the periodic table in a way that allows deep learning to learn to read the periodic table and to learn the law of elements for the purpose of discovering novel superconductors that are outside the training data. It is recognized that it is difficult for deep learning to predict something outside the training data. Although we used only the chemical composition of materials as information, we obtained an $R^{2}$ value of 0.92 for predicting $T_\text{c}$ for materials in a database of superconductors. We also introduced the method named "garbage-in" to create synthetic data of non-superconductors that do not exist. Non-superconductors are not reported, but the data must be required for deep learning to distinguish between superconductors and non-superconductors. We obtained three remarkable results. The deep learning can predict superconductivity for a material with a precision of 62%, which shows the usefulness of the model; it found the recently discovered superconductor CaBi2 and another one Hf0.5Nb0.2V2Zr0.3, neither of which is in the superconductor database; and it found Fe-based high-temperature superconductors (discovered in 2008) from the training data before 2008. These results open the way for the discovery of new high-temperature superconductor families. The candidate materials list, data, and method are openly available from the link https://github.com/tomo835g/Deep-Learning-to-find-Superconductors.

preprint2020arXiv

Enhancement of superconducting transition temperature in electrochemically etched FeSe/LaAlO$_3$ films

In this study, we investigated the gate voltage dependence of $T_{\mathrm c}$ in electrochemically etched FeSe films with an electric-double layer transistor structure. The $T_{\mathrm c}^{\mathrm {zero}}$ value of the etched FeSe films with a lower gate voltage ($V_{\mathrm g}$ = 2.5 and 3.3 V) reaches 46 K, which is the highest value among almost all reported values from the resistivity measurements except for the data by Ge et al. This enhanced $T_{\mathrm c}$ remains unchanged even after the discharge process, unlike the results for electrostatic doping without an etching process. Our results suggest that the origin of the increase in $T_{\mathrm c}$ is not electrostatic doping but rather the electrochemical reaction at the surface of an etched films.

preprint2020arXiv

Microwave Hall effect measurement for materials in the skin depth region

We developed a new microwave Hall effect measurement method for materials in the skin depth region at low temperatures using a cross-shaped bimodal cavity. We analytically calculated electromagnetic fields in the cross-shaped cavity, and the response of the cavity including the sample, whose property is represented by the surface impedance tensor; further, we constructed the method to obtain the Hall component of the surface impedance tensor in terms of the change in resonance characteristics. To confirm the validity of the new method, we applied our method to measure the Hall effect in metallic Bi single crystals at low temperatures, and we confirmed that the microwave Hall angles coincide with the DC Hall angle. Thus, it becomes clear that the Hall angle measurement under cryogenic conditions becomes possible without any complicated tuning mechanisms, and our bimodal cavity method can be used to measure the microwave Hall effect on materials in the skin depth region. The result opens a new approach to discuss the Hall effect in condensed matter physics such as the microwave flux-flow Hall effect in superconductors.

preprint2019arXiv

Close correlation between superconducting transition temperatures and carrier densities in Te- and S-substituted FeSe thin films

We comparatively investigated the transport properties for S- and Te-substituted FeSe thin films under magnetic fields to clarify the origin of the contrasting behavior of the superconducting transition temperature in S and Te substitution. A classical two carrier analysis revealed that the carrier densities of the films increased with increasing Te content, while no significant change was observed for the S-substitution. This composition dependence of the carrier density well corresponds to the $T_{\mathrm c}$ behavior. The clear correlation between $T_{\mathrm c}$ and the carrier densities suggests that the structural transition affects the electronic structure in a different manner between Fe(Se,S) and Fe(Se,Te) and that this fact is the direct cause of the difference in the $T_{\mathrm c}$ behaviors at the end point of the structural transition.

preprint2016arXiv

Investigation of Transport Properties for FeSe$_{1-x}$Te$_x$ Thin Films under Magnetic Fields

We investigated the transport properties under magnetic fields of up to 9 T for FeSe$_{1-x}$Te$_x$ thin films on CaF$_2$. Measurements of the temperature dependence of the electrical resistivity revealed that for $x = 0.2 - 0.4$, where $T_{\rm c}$ is the highest, the width of the superconducting transition increased with increasing magnetic field, while the width was almost the same with increasing magnetic field for $x = 0 - 0.1$. In addition, the temperature dependence of the Hall coefficient drastically changed between $x = 0.1$ and $0.2$ at low temperatures. These results indicate that clear differences in the nature of the superconductivity and electronic structure exist between $x=0-0.1$ and $x \ge 0.2$.

preprint2015arXiv

Near-field microwave imaging of inhomogeneous K$_x$Fe$_y$Se$_2$: separation of topographic and electric features

It is important for modern scanning microwave microscopes to overcome the effect of the surface roughness. Here, we report microwave conductivity imaging of the phase-separated iron chalcogenide K$_x$Fe$_y$Se$_2$ ($x=0.8$, $y=1.6$-$2$), in which electric conductivity-induced contrast is distinguished from topography-induced contrast using a combination of a scanning tunneling microscope and a scanning microwave microscope (STM-SMM). We observed the characteristic modulation of the local electric property that originates from the mesoscopic phase separation of the metallic and semiconducting phases in two different scanning modes: constant current (CC) mode and constant $Q$ (CQ) mode. In particular, CQ scanning is useful because we obtain a qualitative image in which the topographic contrast is largely eliminated without degradation of the spatial resolution.

preprint2015arXiv

Suppression of phase separation and giant enhancement of superconducting transition temperature in FeSe$_{1-x}$Te$_{x}$ thin films

We demonstrate the successful fabrication on CaF$_2$ substrates of FeSe$_{1-x}$Te$_{x}$ films with $0 \le x \le 1$, including the region of $0.1 \le x \le 0.4$, which is well known to be the "phase-separation region", via pulsed laser deposition which is a thermodynamically non-equilibrium method. In the resulting films, we observe a giant enhancement of the superconducting transition temperature, $T_\mathrm{c}$, in the region of $0.1 \le x \le 0.4$: the maximum value reaches 23 K, which is approximately 1.5 times as large as the values reported for bulk samples of FeSe$_{1-x}$Te$_{x}$. We present a complete phase diagram of FeSe$_{1-x}$Te$_{x}$ films. Surprisingly, a sudden suppression of $T_\mathrm{c}$ is observed at $0.1<x<0.2$, while $T_\mathrm{c}$ increases with decreasing $x$ for $0.2 \le x < 1$. Namely, there is a clear difference between superconductivity realized in $x=0-0.1$ and in $x \ge 0.2$. To obtain a film of FeSe$_{1-x}$Te$_{x}$ with high $T_\mathrm{c}$, the controls of the Te content $x$ and the in-plane lattice strain are found to be key factors.

preprint2014arXiv

Exceptional Suppression of Flux-Flow Resistivity in FeSe$_{0.4}$Te$_{0.6}$ by Back-Flow from Excess Fe Atoms and Se/Te Substitutions

We measured the microwave surface impedance of FeSe$_{0.4}$Te$_{0.6}$ single crystals with- and without external magnetic fields. The superfluid density exhibited a quadratic temperature dependence, indicating a strong pair-breaking effect. The flux-flow resistivity behaved as $ρ_f(B\ll B_{\rm c2})/ρ_n=αB/B_{\rm c2}$. The observed $α$ value of $\approx0.66$ was considerably smaller than that of other Fe-based materials ($α\geq1$) and was attributed to a back-flow of superfluids remarkable in disordered superconductors. This is the first-time observation of the back-flow phenomenon caused by an origin other than the vortex pinning in multiple-band systems.

preprint2013arXiv

Effect of Vacuum Annealing on Superconductivity in Fe(Se,Te) Single Crystals

The effect of vacuum annealing on superconductivity is investigated in Fe(Se,Te) single crystals. It is found that superconductivity is not enhanced by annealing under high vacuum (~ 10^(-3) Pa) or by annealing in a sealed evacuated quartz tube. In a moderate vacuum atmosphere (~ 1 Pa), iron oxide layers are found to show up on sample surfaces, which would draw excess Fe out of the crystal. Thus, it is suggested that remanent oxygen effectively works to remove excess Fe from the matrix of Fe(Se,Te) crystals, resulting improvement of superconducting transition temperature. Our transport measurements suggest that the excess Fe scatters the carriers on electron- and hole-type channels in a different manner. We discuss how the mobility of two types of carriers correlate with superconductivity. Since both the electron and hole bands are important for the occurrence of superconductivity, excess Fe would suppress superconductivity mainly due to strong scattering of electrons.

preprint2013arXiv

Enhancement of the Superconducting Transition Temperature in FeSe Epitaxial Thin Films by Anisotropic Compression

In order to investigate the effects of in-plane strain on the superconductivity of FeSe, epitaxial thin films of FeSe were fabricated on CaF$_2$ substrates. The films are compressed along the a-axis and their superconducting transition temperatures $T_{\mathrm c}^{\mathrm {zero}}$ reach 11.4 K, which is approximately 1.5 times higher than that of bulk crystals. The $T_{\mathrm c}$ values are weakly dependent on the ratio of the lattice constants, $c$ / $a$, compared to that of Fe(Se,Te). Our results indicate that even a binary system FeSe has room for improvement, and will open a new route for the application of Fe-based superconductors.

preprint2012arXiv

Investigation of the Superconducting Gap Structure in SrFe$_2$(As$_{0.7}$P$_{0.3}$)$_2$ by Magnetic Penetration Depth and Flux Flow Resistivity Analysis

We measured the microwave surface impedances and obtained the superfluid density and flux flow resistivity in single crystals of a phosphor-doped iron-based superconductor SrFe$_2$(As$_{1-x}$P$_{x}$)$_2$ single crystals ($x=0.30$, $T_c=25 \mathrm{K}$). At low temperatures, the superfluid density, $n_s (T)/n_s(0)$, obeys a power law, $n_s (T)/n_s (0)=1-C(T/T_c)^n$, with a fractional exponent of $n=1.5$-1.6. The flux flow resistivity was significantly enhanced at low magnetic fields. These features are consistent with the presences of both a gap with line nodes and nodeless gaps with a deep minimum. The remarkable difference observed in the superconducting gap structure between SrFe$_2$(As$_{1-x}$P$_{x}$)$_2$ and BaFe$_2$(As$_{1-x}$P$_{x}$)$_2$ in our experiments is important for clarifying the mechanism of iron-based superconductivity.

preprint2012arXiv

Superconducting Fluctuation investigated by THz Conductivity of La$_{2-x}$Sr$_x$CuO$_4$ Thin Films

Frequency-dependent terahertz conductivities of La$_{2-x}$Sr$_x$CuO$_4$ thin films with various carrier concentrations were investigated. The imaginary part of the complex conductivity considerably increased from far above a zero-resistance superconducting transition temperature, $T_\text{c}^\text{zero}$, because of the existence of the fluctuating superfluid density with a short lifetime. The onset temperature of the superconducting fluctuation is at most $\sim 2T_\text{c}^\text{zero}$ for underdoped samples, which is consistent with the previously reported analysis of microwave conductivity. The superconducting fluctuation was not enhanced under a 0.5 T magnetic field. We also found that the temperature dependence of the superconducting fluctuation was sensitive to the carrier concentration of La$_{2-x}$Sr$_x$CuO$_4$, which reflects the difference in the nature of the critical dynamics near the superconducting transition temperature. Our results suggest that the onset temperature of the Nernst signal is not related to the superconducting fluctuation we argued in this paper.

preprint2012arXiv

Superconductivity at 5.4 K in $β$-Bi$_2$Pd

We investigate bulk superconductivity in a high-quality single crystal of Bi$_2$Pd ($β$-Bi$_2$Pd, space group; I4/mmm) at temperatures less than 5.4 K by exploring its electrical resistivity, magnetic susceptibility, and specific heat. The temperature dependence of the electrical resistivity shows convex-upward behaviors at temperatures greater than 40-50 K, which can be explained by a parallel-resistor model. In addition, we demonstrate that this material is a multiple-band/multiple-gap superconductor based on the temperature dependences of the specific heat and the upper critical field.

preprint2012arXiv

Ultralow-dissipative conductivity by Dirac fermions in BaFe$_2$As$_2$

We report on the anomalous behavior of the complex conductivity of BaFe$_{2}$As$_{2}$, which is related to the Dirac cone, in the terahertz (THz)-frequency region. Above the spin-density-wave (SDW) transition temperature, the conductivity spectra follow the Drude model. In the SDW state, the imaginary part of the complex conductivity, $σ_2$, is suppressed in comparison to that expected according to the Drude model. The real part, $σ_1$, exhibits nearly Drude-like behavior. This behavior (i.e., almost no changes in $σ_1$ and the depression of $σ_2$) can be regarded as the addition of extra conductivity without any dissipations in the Drude-type conductivity. The origin of this ultralow-dissipative conductivity is found to be due to conductivity contribution from quasiparticles within the Dirac cone. In other words, we are able to observe the dynamics of Dirac fermions through the conductivity spectra of BaFe$_2$As$_2$, clearly and directly.

preprint2011arXiv

Anomalous Temperature Dependence of the Superfluid Density Caused by Dirty-to-Clean Crossover in FeSe$_{0.4}$Te$_{0.6}$ Single Crystals

We report microwave surface impedances of FeSe$_{0.4}$Te$_{0.6}$ single crystals measured at 12, 19, and 44 GHz. The penetration depth exhibits a power law behavior, $δλ_L=λ_L (T)-λ_L (0) \propto CT^n$ with an exponent $n\simeq 2$, which is considered to result from impurity scattering. This behavior is consistent with $s\pm$-wave pairing symmetry. The temperature dependence of the superfluid density largely deviates from the behavior expected in the BCS theory. We believe that this deviation is caused by the crossover from the dirty regime near $T_c$ to the clean regime at low temperatures, which is supported by the rapid increase of the quasiparticle scattering time obtained from the microwave conductivity. We also believe that the previously published data of the superfluid density can be interpreted in this scenario.

preprint2011arXiv

Effect of Co Impurities on Superconductivity of FeSe0.4Te0.6 single crystals

The effect of Co doping on supercoductivity of FeSe$_{0.4}$Te$_{0.6}$ single crystals is investigated. The superconducting transition temperature decreases linearly for Co doping with the rate -0.75 K/(Co %). On the other hand, the residual resistivity increase is less than 50 $/mu/Omega$cm for 4 % Co doping. These data are consistent with the sign changing interband scattering mechanism of superconductivity ($s_/pm$ symmetry).

preprint2010arXiv

Microwave Surface Impedance Measurements of LiFeAs Single Crystals

We report results of microwave surface impedance measurements of LiFeAs single crystals. The in-plane penetration depth depends on temperature exponentially at low temperatures, which strongly suggests that this material has the nodeless superconducting gap. The temperature dependence of the superfluid density indicates that LiFeAs is a multi-gap superconductor with at least two isotropic gaps. In addtion, the real part of the microwave conductivity exhibits a large enhancement below $T_\mathrm{c}$, indicating that the quasi-particle relaxation time, $τ$, increases rapidly below $T_\mathrm{c}$. We believe that this enhancement is rather common to all superconductors where an inelastic scattering is dominant above $T_\mathrm{c}$, irrespective of the strength of the electron correlation.

preprint2010arXiv

Systematic Comparison of Eight Substrates in the Growth of FeSe$_{0.5}$Te$_{0.5}$ Superconducting Thin Films

We have investigated the crystal structures and superconducting properties of thin films of FeSe$_{0.5}$Te$_{0.5}$ grown on eight different substrates. Superconductivity is not correlated with the lattice mismatch; rather it is correlated with the degree of in-plane orientation and with the lattice parameter ratio $c/a$. The best superconducting properties were observed in films on MgO and LaAlO$_3$ ($T_\mathrm{c}^\mathrm{zero}$ of 9.5 K). TEM observation showed that the presence or absence of an amorphous-like layer at the substrate surface plays a key role in determining the structural and superconducting properties of the grown films.

preprint2009arXiv

Superconductivity of FeSe0.5Te0.5 Thin Films Grown by Pulsed Laser Deposition

FeSe0.5Te0.5 thin films with PbO-type structure are successfully grown on MgO(100) and LaSrAlO4(001) substrates from FeSe0.5Te0.5 or FeSe0.5Te0.75 polycrystalline targets by pulsed-laser deposition. The film deposited on the MgO substrate (film thickness ~ 55 nm) shows superconductivity at 10.6 K (onset) and 9.2 K (zero resistivity). On the other hand, the film deposited on the LaSrAlO4 substrate (film thickness ~ 250 nm) exhibits superconductivity at 5.4 K (onset) and 2.7 K (zero resistivity). This suggests the strong influence of substrate materials and/or the c-axis length to superconducting properties of FeSe0.5Te0.5 thin films.